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    Part ECAD Model Manufacturer Description Download Buy
    2SC5945 Renesas Electronics Corporation Small Signal Bip-TRSs for High Frequency Amplifier, , / Visit Renesas Electronics Corporation

    2SC5945 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC5945 Renesas Technology Si NPN Epitaxial High Frequency Medium Power Amplifier Original PDF
    2SC5945 Renesas Technology Si NPN Epitaxial High Frequency Medium Power Amplifier Original PDF
    2SC5945TR-E Renesas Technology Si NPN Epitaxial High Frequency Medium Power Amplifier Original PDF

    2SC5945 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: 2SC5945 Si NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0443-0200 Rev.2.00 Jan 27, 2006 Features • Excellent Linearity P1dB at output = +26 dBm typ. f = 2.4 GHz • High Collector to Emitter Voltage VCEO = 5 V • Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone.


    Original     		PDF 2SC5945 REJ03G0443-0200 PWSN0006JA-A

    ZO 607 MA

    Abstract: 149-5 zo 607 150-1 2SC5945
    Text: 2SC5945 Si NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0443-0100 Rev.1.00 Oct.28.2004 Features • Excellent Linearity P1dB at output = +26 dBm typ. f = 2.4 GHz • High Collector to Emitter Voltage VCEO = 5 V • Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone.


    Original     		PDF 2SC5945 REJ03G0443-0100 WSON0202-6V Unit2607 ZO 607 MA 149-5 zo 607 150-1 2SC5945

    Untitled

    Abstract: No abstract text available
    Text: 2SC5945 Si NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0443-0300 Rev.3.00 Aug 03, 2006 Features • Excellent Linearity P1dB at output = +26 dBm typ. f = 2.4 GHz • High Collector to Emitter Voltage VCEO = 5 V • Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone.


    Original     		PDF 2SC5945 REJ03G0443-0300 PWSN0006JA-A

    ZO 607 MA

    Abstract: transistor zo 607 zo 607 zo 107 2SC5945 2SC5945TR-E
    Text: 2SC5945 Si NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0443-0300 Rev.3.00 Aug 03, 2006 Features • Excellent Linearity P1dB at output = +26 dBm typ. f = 2.4 GHz • High Collector to Emitter Voltage VCEO = 5 V • Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone.


    Original     		PDF 2SC5945 REJ03G0443-0300 PWSN0006JA-A ZO 607 MA transistor zo 607 zo 607 zo 107 2SC5945 2SC5945TR-E

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    2SC5945

    Abstract: 2SC5945TR-E 0773
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    1002ds

    Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
    Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5


    Original     		PDF 24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as