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    2SC5820 Search Results

    2SC5820 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    2SC5820WU-TL-H Renesas Electronics Corporation Small Signal Bip-TRSs for High Frequency Amplifier, CMPAK, /Embossed Tape Visit Renesas Electronics Corporation
    2SC5820WU-TL-E Renesas Electronics Corporation Small Signal Bip-TRSs for High Frequency Amplifier, CMPAK, /Embossed Tape Visit Renesas Electronics Corporation
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    2SC5820 Price and Stock

    Rochester Electronics LLC 2SC5820WU-TL-E

    SMALL SIGNAL BIPOLAR TRANSTR NPN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SC5820WU-TL-E Bulk 1,159
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    Rochester Electronics LLC 2SC5820WU-TL-H

    SMALL SIGNAL BIPOLAR TRANSTR NPN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SC5820WU-TL-H Bulk 1,159
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    Renesas Electronics Corporation 2SC5820WU-TL-H

    Trans RF BJT NPN 4V 0.035A 100mW 4-Pin CMPAK T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SC5820WU-TL-H 3,000 1,418
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    • 10000 $0.2645
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    Rochester Electronics 2SC5820WU-TL-H 3,000 1
    • 1 $0.2489
    • 10 $0.2489
    • 100 $0.234
    • 1000 $0.2116
    • 10000 $0.2116
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    Renesas Electronics Corporation 2SC5820WU-TL-E

    Trans RF BJT NPN 4V 0.035A 100mW 4-Pin CMPAK T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SC5820WU-TL-E 3,000 1,418
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.2645
    		Buy Now
    Rochester Electronics 2SC5820WU-TL-E 3,000 1
    • 1 $0.2489
    • 10 $0.2489
    • 100 $0.234
    • 1000 $0.2116
    • 10000 $0.2116
    		Buy Now

    2SC5820 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC5820 Renesas Technology Transistor; Type: Amplifiers/Bipolar; VCEO (V): 4; Ic (A): 0.035; Pc (W): 0.05; hFE: 70 to 150; fT (GHz) typ: 20; Cob (pF) max: 0.15; NF (dB) typ: 1.15; Package: CMPAK-4 Original PDF
    2SC5820 Renesas Technology Silicon NPN Epitaxial Original PDF

    2SC5820 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet 2SC5820 Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator R07DS0279EJ0300 Previous: REJ03G0758-0200 Rev.3.00 Mar 28, 2011 Application • High gain bandwidth product fT = 20 GHz typ. • High power gain and low noise figure;


    Original     		PDF 2SC5820 R07DS0279EJ0300 REJ03G0758-0200) PTSP0004ZA-A R07DS0279EJ0300

    2SC5820

    Abstract: application of IC 723 09 06 848 0521 BB 1507 FL
    Text: 2SC5820 Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator REJ03G0758-0200 Previous ADE-208-1604A Rev.2.00 Aug.10.2005 Application • High gain bandwidth product fT = 20 GHz typ. • High power gain and low noise figure; PG = 17.5 dB typ., NF = 1.15 dB typ. at f = 1.8 GHz


    Original     		PDF 2SC5820 REJ03G0758-0200 ADE-208-1604A) PTSP0004ZA-A 2SC5820 application of IC 723 09 06 848 0521 BB 1507 FL

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet 2SC5820 Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator R07DS0279EJ0300 Previous: REJ03G0758-0200 Rev.3.00 Mar 28, 2011 Application • High gain bandwidth product fT = 20 GHz typ. • High power gain and low noise figure;


    Original     		PDF 2SC5820 R07DS0279EJ0300 REJ03G0758-0200) PTSP0004ZA-A

    2SC5820

    Abstract: str 1195 IC STR 404
    Text: 2SC5820 Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator ADE-208-1604A Z Rev.1 Nov. 2002 Features • High gain bandwidth product fT = 20 GHz typ. • High power gain and low noise figure; PG = 17.5 dB typ., NF = 1.15 dB typ. at f = 1.8 GHz


    Original     		PDF 2SC5820 ADE-208-1604A D-85622 D-85619 2SC5820 str 1195 IC STR 404

    HAT1058C

    Abstract: HAT2106G HAT1068C HAT1062G Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products September, 2002 Product Marketing Dept. Multi Purpose Semiconductor Business Unit Semiconductor & Integrated Circuits, Hitachi, Ltd. HITACHI SMALL SIGNAL TRANSISTOR Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright,


    Original     		PDF notic50 SON3024-8 HAT1062G ADE-A08-003Q HAT1058C HAT2106G HAT1068C Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23

    2SC5820

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original     		PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


    Original     		PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545

    BB 509 varicap diode

    Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
    Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    2SC5820

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF D-85622 D-85619 2SC5820

    1002ds

    Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
    Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5


    Original     		PDF 24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as