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    Panasonic Electronic Components 2SC5516

    TRANSISTOR,BJT,NPN,600V V(BR)CEO,20A I(C),TO-247VAR
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    Quest Components 2SC5516 19
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    2SC551 Datasheets (44)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC551 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC551 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC551 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC551 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC551 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC551 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC551 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC551 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC551 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC551 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC551 Toshiba Silicon NPN Epitaxial Planar Transistor Scan PDF
    2SC551 Toshiba Japanese Transistor Data Book Scan PDF
    2SC5510 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5511 ROHM High-voltage Switching (Audio output amplifier transistor, TV velocity modulation transistor) (160V, 1.5A) Original PDF
    2SC5511 ROHM For Audio Amplifier output - TV Velosity Modulation (160V, 1.5A) Original PDF
    2SC5511 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5511 ROHM High-voltage Switching (Audio output amplifier transistor, TV velocity modulation transistor) (160V, 1.5A) Scan PDF
    2SC5512 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5513 Panasonic Silicon NPN triple diffusion mesa type Original PDF
    2SC5513 Panasonic NPN Transistor Original PDF

    2SC551 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SC5514 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 φ 3.2±0.1 Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Junction temperature


    Original     		PDF 2SC5514

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SC5513 Silicon NPN triple diffusion mesa type Unit: mm φ 3.2±0.1 Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Junction temperature


    Original     		PDF 2SC5513

    2sC5517

    Abstract: No abstract text available
    Text: Power Transistors 2SC5517 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 • Absolute Maximum Ratings TC = 25°C 23.4 (4.5) (1.2) (4.0) 2.0±0.2 5˚ 5˚ 1.1±0.1 0.7±0.1 Collector to base voltage VCBO 1 700 V Collector to emitter voltage VCES


    Original     		PDF 2SC5517 2sC5517

    2SC5514

    Abstract: No abstract text available
    Text: Power Transistors 2SC5514 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 φ 3.2±0.1 Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Junction temperature Storage temperature


    Original     		PDF 2SC5514 2SC5514

    2SC5518

    Abstract: No abstract text available
    Text: Power Transistors 2SC5518 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 1500 V Collector to emitter voltage VCES 1500 V Emitter to base voltage VEBO 5


    Original     		PDF 2SC5518 75kHz, 2SC5518

    2SA2005

    Abstract: 2SC5511
    Text: 2SC5511 Transistors High-voltage Switching Audio output amplifier transistor, TV velocity modulation transistor (160V, 1.5A) 2SC5511 !Features 1) Flat DC current gain characteristics. 2) High breakdown voltage. (BVCEO = 160V) 3) High fT. (Typ. 150MHz) 4) Wide SOA (safe operating area).


    Original     		PDF 2SC5511 150MHz) 2SA2005. O-220FN 100MHz 2SA2005 2SC5511

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SC5517 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 φ 3.2±0.1 Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Junction temperature


    Original     		PDF 2SC5517

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SC5515 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 φ 3.2±0.1 Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Junction temperature


    Original     		PDF 2SC5515

    2SC5513

    Abstract: No abstract text available
    Text: Power Transistors 2SC5513 Silicon NPN triple diffusion mesa type Unit: mm • Absolute Maximum Ratings TC = 25°C Collector to base voltage VCBO 1 500 V Collector to emitter voltage VCES 1 500 V VCEO 600 V Emitter to base voltage VEBO 7 V Peak collector current


    Original     		PDF 2SC5513 2SC5513

    2SC5516

    Abstract: 2SC5516 equivalent
    Text: Power Transistors 2SC5516 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 φ 3.2±0.1 Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Junction temperature Storage temperature


    Original     		PDF 2SC5516 2SC5516 2SC5516 equivalent

    2SC5515

    Abstract: No abstract text available
    Text: Power Transistors 2SC5515 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 • Absolute Maximum Ratings TC = 25°C Collector to base voltage VCBO 1 500 V Collector to emitter voltage VCES 1 500 V VCEO 600 V Emitter to base voltage VEBO 7 V Peak collector current


    Original     		PDF 2SC5515 2SC5515

    2SC5519

    Abstract: diode 6A 1000v
    Text: Power Transistors 2SC5519 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 1700 V Collector to emitter voltage VCES 1700 V Emitter to base voltage VEBO 5


    Original     		PDF 2SC5519 75kHz, 2SC5519 diode 6A 1000v

    2SC5518

    Abstract: No abstract text available
    Text: Power Transistors 2SC5518 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 • Absolute Maximum Ratings TC = 25°C 23.4 (4.5) (1.2) (4.0) 2.0±0.2 5˚ 5˚ 1.1±0.1 0.7±0.1 Collector to base voltage VCBO 1 500 V Collector to emitter voltage VCES


    Original     		PDF 2SC5518 2SC5518

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SC5516 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 φ 3.2±0.1 Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Junction temperature


    Original     		PDF 2SC5516

    2SC5519

    Abstract: No abstract text available
    Text: Power Transistors 2SC5519 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 • Absolute Maximum Ratings TC = 25°C 23.4 (4.5) (1.2) (4.0) 2.0±0.2 5˚ 5˚ 1.1±0.1 0.7±0.1 Collector to base voltage VCBO 1 700 V Collector to emitter voltage VCES


    Original     		PDF 2SC5519 2SC5519

    2SC5516

    Abstract: 2SC5516 equivalent NPN Transistor VCEO 1000V
    Text: Power Transistors 2SC5516 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 1500 V VCES 1500 V Collector to emitter voltage VCEO 600 V Emitter to base voltage


    Original     		PDF 2SC5516 64kHz, 2SC5516 2SC5516 equivalent NPN Transistor VCEO 1000V

    2SC5514

    Abstract: No abstract text available
    Text: Power Transistors 2SC5514 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 • Absolute Maximum Ratings TC = 25°C Collector to base voltage VCBO 1 500 V Collector to emitter voltage VCES 1 500 V VCEO 600 V Emitter to base voltage VEBO 7 V Peak collector current


    Original     		PDF 2SC5514 2SC5514

    2SC5515

    Abstract: No abstract text available
    Text: Power Transistors 2SC5515 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 • Absolute Maximum Ratings TC = 25°C Collector to base voltage VCBO 1 500 V Collector to emitter voltage VCES 1 500 V VCEO 600 V Emitter to base voltage VEBO 7 V Peak collector current


    Original     		PDF 2SC5515 2SC5515

    2SC5510

    Abstract: Hitachi DSA002779
    Text: 2SC5510 Silicon NPN Triple Diffused Horizntal Deflection Output 1st. Edition April 1998 Preliminary Features ¥ ¥ ¥ High breakdown voltage VCES = 1500 V High speed switching tf = 0.15 sec typ. at fH=64kHz Isolated package TOÐ3PFM Outline TO–3PFM C 2


    Original     		PDF 2SC5510 64kHz D-85622 2SC5510 Hitachi DSA002779

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SC5519 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 φ 3.2±0.1 Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Junction temperature


    Original     		PDF 2SC5519

    NPN Transistor VCEO 1000V

    Abstract: 2SC5513
    Text: Power Transistors 2SC5513 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 1500 V VCES 1500 V Collector to emitter voltage VCEO 600 V Emitter to base voltage


    Original     		PDF 2SC5513 64kHz, NPN Transistor VCEO 1000V 2SC5513

    2SC5517

    Abstract: No abstract text available
    Text: Power Transistors 2SC5517 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 φ 3.2±0.1 Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Junction temperature Storage temperature


    Original     		PDF 2SC5517 2SC5517

    213A

    Abstract: 2SC5515
    Text: Power Transistors 2SC5515 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 1500 V VCES 1500 V Collector to emitter voltage VCEO 600 V Emitter to base voltage


    Original     		PDF 2SC5515 64kHz, 213A 2SC5515

    2SC5511

    Abstract: 160V Audio Output Transistor Amplifier 2SA2005
    Text: 2SC5511 Transistors High-voltage Switching Audio output amplifier transistor, TV velocity modulation transistor (160V, 1.5A) 2SC5511 ! External dim ensions (Units : mm) ! Features 1) Flat DC current gain characteristics. 2) High breakdown voltage. (BVceo = 160V)


    OCR Scan     		PDF 2SC5511 150MHz) 2SA2005. O-220FN 100MHz 2SC5511 160V Audio Output Transistor Amplifier 2SA2005