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    California Eastern Laboratories (CEL) 2SC5509-A

    RF TRANS NPN 3.3V 15GHZ SOT343F
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    California Eastern Laboratories (CEL) 2SC5508-A

    RF TRANS NPN 3.3V 25GHZ SOT343F
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    California Eastern Laboratories (CEL) 2SC5508-T2-A

    RF TRANS NPN 3.3V 25GHZ SOT343F
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    California Eastern Laboratories (CEL) 2SC5509-T2-A

    RF TRANS NPN 3.3V 15GHZ SOT343
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    Rochester Electronics LLC 2SC5509-T2-A

    SMALL SIGNAL BIPOLAR TRANSISTOR
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    2SC550 Datasheets (54)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC550 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC550 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC550 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC550 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC550 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC550 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC550 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC550 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC550 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC550 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC550 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC5501 Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistor Original PDF
    2SC5501 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5501 Sanyo Semiconductor VHF to UHF Low-Noise Wide-Band Amplifier Applications Scan PDF
    2SC5501 Sanyo Semiconductor VERY HIGH-FREQUENCY TRANSISTOR SERIES Scan PDF
    2SC5501 Sanyo Semiconductor Transistor Selectio Guide (Short Specs) Scan PDF
    2SC5501A-4-TR-E On Semiconductor 2SC5501A - NPN Bipolar Transistor for VHF to UHF Wide-Band Low Noise Amplifier Applications Original PDF
    2SC5501A-4-TR-E ON Semiconductor RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN BIPO VHF-UHF MCP4 Original PDF
    2SC5502 Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistor High-Frequ Original PDF
    2SC5502 Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistor Original PDF

    2SC550 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor zo 607

    Abstract: MARKING LN4 ZO 607 MA 2SC5501A ic 747 zo 607 738.55 29572
    Text: 2SC5501A Ordering number : ENA1061 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5501A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=13dB typ (f=1GHz).


    Original     		PDF 2SC5501A ENA1061 S21e2 500mW A1061-5/5 transistor zo 607 MARKING LN4 ZO 607 MA 2SC5501A ic 747 zo 607 738.55 29572

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5505 Silicon NPN epitaxial planar type For power amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features 15.0±0.5 φ 3.2±0.1 ■ Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2002/95/EC) 2SC5505 O-220D

    transistor marking T78 ghz

    Abstract: 2SC5507 2SC5507-T2 power must office 650
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 2 mA, f = 2 GHz


    Original     		PDF 2SC5507 2SC5507-T2 transistor marking T78 ghz 2SC5507 2SC5507-T2 power must office 650

    2SC5509

    Abstract: 2SC5509-T2 2V330
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz


    Original     		PDF 2SC5509 2SC5509-T2 2SC5509 2SC5509-T2 2V330

    N6222

    Abstract: 2SC5503
    Text: 注文コード No. N 6 2 2 2 2SC5503 No. N6222 50699 新 2SC5503 特長 NPN エピタキシァルプレーナ形シリコントランジスタ VHF ~ UHF 広帯域低雑音増幅用 ・低雑音である：NF=1.2dB typ f=1GHz 。 ・高利得である：⏐S21e⏐2=15dB typ (f=1GHz)。


    Original     		PDF 2SC5503 N6222 S21e2 250mm S21e2 2SC5503 N6222

    Untitled

    Abstract: No abstract text available
    Text: 2SC5501A Ordering number : ENA1061 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5501A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=13dB typ (f=1GHz).


    Original     		PDF 2SC5501A ENA1061 500mW A1061-5/5

    2SC5507-T2

    Abstract: transistor NEC 882 p 2SC5507 C10535E transistor marking T78 ghz
    Text: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA


    Original     		PDF 2SC5507 2SC5507-T2 2SC5507-T2 transistor NEC 882 p 2SC5507 C10535E transistor marking T78 ghz

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet 2SC5508 NPN SILICON RF TRANSISTOR R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • • • • • <R> Ideal for low-noise, high-gain amplification applications


    Original     		PDF 2SC5508 R09DS0055EJ0200 2SC5508-A 2SC5508-T2 2SC5508-T2-A

    NEC 1357

    Abstract: 2SC5509 2SC5509-T2 C10535E 487 4PIN
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER ⋅ LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz


    Original     		PDF 2SC5509 2SC5509-T2 NEC 1357 2SC5509 2SC5509-T2 C10535E 487 4PIN

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet 2SC5509 NPN SILICON RF TRANSISTOR R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • • • • • <R> Ideal for medium output power amplification


    Original     		PDF 2SC5509 R09DS0056EJ0300 2SC5509-A 2SC5509-T2 2SC5509-T2-A

    N6221

    Abstract: 2SC5501 62212 6221-1 62211 TA-1710
    Text: 注文コード No. N 6 2 2 1 2SC5501 No. N6221 50699 新 2SC5501 特長 NPN エピタキシァルプレーナ形シリコントランジスタ VHF ~ UHF 広帯域低雑音増幅用 ・低雑音である：NF=1.0dB typ f=1GHz 。 ・高利得である：⏐S21e⏐2=13dB typ(f=1GHz)。


    Original     		PDF 2SC5501 N6221 S21e2 500mW 250mm2 N6221 2SC5501 62212 6221-1 62211 TA-1710

    TA1703

    Abstract: ce 2826 ic TA17-03 TA-1703 2SC5504 ce 2826
    Text: 注文コード No. N 6 2 2 3 2SC5504 No. N6223 50699 新 2SC5504 特長 NPN エピタキシァルプレーナ形シリコントランジスタ UHF ~ S バンド低雑音増幅用 ・低雑音である：NF=0.9dB typ f=1GHz 。 ：NF=1.4dB typ (f=1.5GHz)。


    Original     		PDF 2SC5504 N6223 S21e2 11GHz 250mm2 S21e21 TA1703 ce 2826 ic TA17-03 TA-1703 2SC5504 ce 2826

    ac 0624 transistor 17-33

    Abstract: 6221 ic 2SC5501
    Text: Ordering number:ENN6221 NPN Epitaxial Planar Silicon Transistor 2SC5501 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions • Low noise : NF=1.0dB typ f=1GHz . · High gain : ⏐S21e⏐2=13dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ.


    Original     		PDF ENN6221 2SC5501 S21e2 500mW 2SC5501] ac 0624 transistor 17-33 6221 ic 2SC5501

    2SC5501A

    Abstract: A1061 A1061-3 *5501a A10612
    Text: 2SC5501A 注文コード No. N A 1 0 6 1 三洋半導体データシート N NPN エピタキシァルプレーナ型シリコントランジスタ 2SC5501A VHF ~ UHF 広帯域低雑音増幅用 特長 ・低雑音である：NF=1.0dB typ f=1GHz 。 ・高利得である：⏐S21e⏐2=13dB typ(f=1GHz)。


    Original     		PDF 2SC5501A S21e2 500mW 250mm2 2SC5501A 60408AB A1061-5/5 A1061 A1061-3 *5501a A10612

    Untitled

    Abstract: No abstract text available
    Text: 2SC5501A Ordering number : ENA1061 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5501A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=13dB typ (f=1GHz).


    Original     		PDF ENA1061 2SC5501A S21e2 500mW 250mm20 A1061-5/5

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5505 Silicon NPN epitaxial planar type For power amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol


    Original     		PDF 2002/95/EC) 2SC5505 O-220D

    2SC5503

    Abstract: IC163
    Text: Ordering number:ENN6222 NPN Epitaxial Planar Silicon Transistor 2SC5503 VHF to UHF Low-Noise Wide-Band Amplifier Applications Package Dimensions unit:mm 2161 [2SC5503] 0.65 0.65 0.15 3 0 to 0.1 1.25 2.1 0.3 4 0.425 2 0.6 0.65 0.5 2.0 1 : Emitter 2 : Collector


    Original     		PDF ENN6222 2SC5503 2SC5503] S21e2 2SC5503 IC163

    ac 0624 transistor 17-33

    Abstract: 2SC5501 TA-1710
    Text: Ordering number:ENN6221 NPN Epitaxial Planar Silicon Transistor 2SC5501 VHF to UHF Low-Noise Wide-Band Amplifier Applications Package Dimensions unit:mm 2161 [2SC5501] 0.65 0.65 0.15 3 0 to 0.1 1.25 2.1 0.3 4 0.425 2 0.6 0.65 0.5 2.0 1 : Emitter 2 : Collector


    Original     		PDF ENN6221 2SC5501 2SC5501] S21e2 500mW ac 0624 transistor 17-33 2SC5501 TA-1710

    2SC5506

    Abstract: ib35 TA-1520
    Text: Ordering number:EN6070 NPN Triple Diffused Planar Silicon Transistor 2SC5506 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed. · High breakdown voltage VCBO=1600V . · High reliability (Adoption of HVP process).


    Original     		PDF EN6070 2SC5506 2048B 2SC5506] 2SC5506 ib35 TA-1520

    ce 2826 ic

    Abstract: IC 4305 2SC5504 TA1703
    Text: Ordering number:ENN6223 NPN Epitaxial Planar Silicon Transistor 2SC5504 UHF to S Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : ⏐S21e⏐2=11dB typ (f=1GHz).


    Original     		PDF ENN6223 2SC5504 S21e2 11GHz 2SC5504] ce 2826 ic IC 4305 2SC5504 TA1703

    TA-1520

    Abstract: 2SC5506
    Text: Ordering number:EN6070 NPN Triple Diffused Planar Silicon Transistor 2SC5506 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed. · High breakdown voltage VCBO=1600V . · High reliability (Adoption of HVP process).


    Original     		PDF EN6070 2SC5506 2048B 2SC5506] TA-1520 2SC5506

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-nolse, hlgh-gain amplification applications • N F = 1.1 dB,


    OCR Scan     		PDF 2SC5508 2SC5508-T2 Rn/50 13865E J1V0DS00 0DS00

    sanyo ic lc 7550

    Abstract: 0281 002 576 CQ 419 transistor zo 607 zo 607 MA 2SC5503 ZS12 ZS21 cq 0765
    Text: Ordering number:ENN6222 NPN Epitaxial Planar Silicon Transistor 2SC5503 ISAfiYOl VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions • Low ,ow noisi noise : NF=1.2dB typ f=lGHz . High iigh gain : | sz S21i e |2 -= - 15dB i job typ (f=


    OCR Scan     		PDF ENN6222 2SC5503 2SC5503] S4420 sanyo ic lc 7550 0281 002 576 CQ 419 transistor zo 607 zo 607 MA 2SC5503 ZS12 ZS21 cq 0765

    Untitled

    Abstract: No abstract text available
    Text: fìjUeJc&gct - / PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current


    OCR Scan     		PDF 2SC5507 2SC5507 2SC5507-T2