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    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original     		PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    RF NPN POWER TRANSISTOR 3 GHZ 10W

    Abstract: 2SC4526 P028
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4526 NPN EPITAXIAL PLANAR TYPE D IS C R E T IO N 2SC4526 is a silicon NPN ep itaxial planar typ e transistor specifically designed fo r RF power a m p lifie r applications in 1.65GHz. FEATURES • High pow er gain: Gpb ^ 4.5dB , P0 = 28W


    OCR Scan     		PDF 2SC4526 65GHz. 65GHz, RF NPN POWER TRANSISTOR 3 GHZ 10W P028

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4526 NPN EPITAXIAL PLANAR T Y P E D IS C R IP T IO N O U T L IN E D R A W IN G 2 S C 4 5 2 6 is a silicon N P N epitaxial planar type transistor specifically designed for R F power amplifier applications in Dimensions in mm


    OCR Scan     		PDF 2SC4526

    2sc4526 mitsubishi

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4526 NPN EPITAXIAL PLANAR T Y P E D IS C R IP T IO N O U T L IN E D R A W IN G 2SC 4526 is a silicon NPN epitaxial planar type transistor specifically designed for R F power amplifier applications in 1.65GHz. D im e n sio n s in m m


    OCR Scan     		PDF 2SC4526 2SC4526 65GHz. 65GHz, 2SC4525 2sc4526 mitsubishi

    transistor D 2331

    Abstract: 2331 TRANSISTOR T31B
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4838 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4838 is a silicon NPN epitaxial planar type transistor OUTLINE DRAWING Dimension in mm specifically designed fo r RF power amplifiers in 1.65GHz. 4 + 0.5 C1.5MAX C1.5MAX FEATURES


    OCR Scan     		PDF 2SC4838 2SC4838 65GHz. 65GHz, transistor D 2331 2331 TRANSISTOR T31B

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4838 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4838 is a silicon NPN epitaxial planar type transistor OUTLINE DRAWING Dimension in mm specifically designed -for RF power amplifiers in 1,65GHz. FEATURES High power gain : Gpb S 9.3dB, Po fe 6W


    OCR Scan     		PDF 2SC4838 2SC4838 65GHz. 65GHz, 2SC4525

    2SC4515

    Abstract: 2SC4536 2SC4561 2SC4550 c455 2SC4516 2SC4519 2SC4520 2SC4521 2SC4523
    Text: - 206 - m X Ë f à <Ta=25,C 1*EPÍ¿Tc=25'C 2SC4515 föT HF LN A n VcBO Vc e o IcCDO Pc Pc* V) (V) (A) (W) (W) 15 10 0.05 "(max) (/¿A) 0.2 VcB (V) 1 10 % (min) ft 4# (max) iê (Ta=25<C ) (max) (V) ic/ÏE (A) Vc e (V) [*EP(atypffi] 50 300 8 0.01 (max) (V)


    OCR Scan     		PDF 2SC4515 2SC4516 2SC4519 2SC4520 2SC4521 2SC4522 2SC4523 2SC4524 2SC4547 SC-62 2SC4515 2SC4536 2SC4561 2SC4550 c455 2SC4519 2SC4520 2SC4521 2SC4523