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    Panasonic Electronic Components 2SC3975

    TRANS NPN 500V 10A TOP-3F
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    2SC3975 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC3975 Panasonic NPN Transistor Original PDF
    2SC3975 Panasonic Silicon NPN triple diffusion planar type Original PDF
    2SC3975 Panasonic Silicon NPN Triple Diffusion Planar Type Power Transistor Original PDF
    2SC3975 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3975 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3975 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3975 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC3975 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    2SC3975 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3975 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 15.0±0.2 21.0±0.5 φ 3.2±0.1 VCE = 10 V, IC = 0.5 A, f = 1 MHz


    Original     		2002/95/EC) 2SC3975 150enting PDF

    2SC3975

    Abstract: No abstract text available
    Text: Power Transistors 2SC3975 Silicon NPN triple diffusion planar type Unit: mm For high breakdown voltage high-speed switching 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 15.0±0.2 φ 3.2±0.1 16.2±0.5 (3.5) Solder Dip • High-speed switching • High collector to base voltage VCBO


    Original     		2SC3975 2SC3975 PDF

    2SC3975

    Abstract: No abstract text available
    Text: Power Transistors 2SC3975 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 0.7 15.0±0.3 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)


    Original     		2SC3975 SC-92 2SC3975 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC3975 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)500 V(BR)CBO (V)800 I(C) Max. (A)10 Absolute Max. Power Diss. (W)3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)800 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)6


    Original     		2SC3975 Freq20MÃ PDF

    200V 100MA NPN

    Abstract: ic 3A hfe 500 2SC3975
    Text: Power Transistors 2SC3975 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 0.7 15.0±0.3 • Features M Di ain sc te on na tin nc ue e/ d • High-speed switching • High collector-base voltage (Emitter open) VCBO


    Original     		2SC3975 200V 100MA NPN ic 3A hfe 500 2SC3975 PDF

    2SC3975

    Abstract: No abstract text available
    Text: Power Transistors 2SC3975 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ● ● ● High-speed switching High collector to base voltage VCBO Wide area of safe operation ASO Satisfactory linearity of foward current transfer ratio hFE


    Original     		2SC3975 TC100 2SC3975 PDF

    2SC3975

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3975 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short)


    Original     		2002/95/EC) 2SC3975 SC-92 2SC3975 PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE PDF

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D PDF

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 PDF

    PANASONIC J40

    Abstract: TCS100 TC 30i 2SC3975
    Text: Power Transistors 2SC3975 2SC3975 Silicon NPN Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching • Features 6.9mm. I* *1 • H ig h s p e e d s w itc h in g • H ig h c o lle c to r - b a s e v o lta g e U n it ! mm


    OCR Scan     		2SC3975 TCS100 PANASONIC J40 TC 30i 2SC3975 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power T ransistors 2SC 3975 2SC3975 Silicon NPN Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching U n it ! mm 5.2m ax. • Features o • High sp ee d sw itching 21.0 + 0.5 , (V cbo • Wide area of sa fety operation (ASO)


    OCR Scan     		2SC3975 PDF

    D4242

    Abstract: 2SC3987 2SC4000 2SC4001 2SC3975 2SC3976 2SC3977 2SC3977A 2SC3978 2SC3978A
    Text: - 182 - m XËtë m 2SC3975 2SC3976 2SC3977 2SC3977A 2SC3978 2SC3978A 2SC3979 2SC3979A 2SC3980 2SC3980A 2SC3981 2SC3981A 2SC3982 2SC3982A & tt KT KT KT KT KT KT KT KT KT KT KT KT KT KT « a mw Ta=25‘ C, *0][ÍTc=25eC V’ CBO V’ ceo IC(DC) Pc Pc* (V)


    OCR Scan     		2SC3975 2SC3976 2SC3977 2SC3977A 2SC3978 2SC3978A 2SC3979 T03PBL) 2SC3992 D4242 2SC3987 2SC4000 2SC4001 PDF

    2SC2495

    Abstract: 2SD889 2SC1565 2SC2915 nec 3114 2SD1010 2SC2762 2SC3283 2SC3356 3079
    Text: - tt S £ T y p e No. € Manuf. 2SC 3079 □- - A 2SC 3080 ^ □- - A 2SC 3081 #" □- A 2SC 3082 □- - A = * SANYO £ 2SC3083 2SC 3085 h m 2SC4110 — 3 ^ ÎL _= H ß » H. i¥ 2SC 3092 = 2SC 3093 H 2SC 3094 2SC2612 2SC3365 2SC3975 2SC2658 » 2SC3089 2SC2659


    OCR Scan     		ZSC2999 2SC2377 2SC2636 2SC2512 2SC1215 2SC2480 2SC2841 2SC3083 2SC2739 2SC4110 2SC2495 2SD889 2SC1565 2SC2915 nec 3114 2SD1010 2SC2762 2SC3283 2SC3356 3079 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors Selection Guide by Applications and Functions • Switching Power Transistors (continued) Appli­ cation VcBO VcEO (V) (V) lc VcE (A) (V) (sai) Package (No.) lc (A) Ib tf (i*s) MT3 (D43) (mA) MT4 (D46) TO r 0 -220(a) T 0 2 2 0 E T0-220D N T ype


    OCR Scan     		T0-220D -220F 2SC4026 2SC4961 2SC3870 2SC4559 2SC5034 2SC3871 2SC5127 2SC5128 PDF

    2SB600 NEC

    Abstract: 2SD965 2SD966 2SD2061 2SB600 1951b 2sc3677 2SC3421 2SD1483 2sd1944
    Text: - m % tt Type No. 2S0 1951 2SD 1952 ^ 2SD 1953 ^ 2SD 1955 2S0 1956 2SD 1957 2SD 1958 2SD 2SD 2SD 2SD 2 so « 0 S ft Z SANYO 2SDS79 2SD15Z4 * $ TOSHIBA 2SC3266 H ft iL m NEC tL HITACHI 2SC2873 2SD1887 2SC3299 2SD1548 1953 □— A 2SD1145 2SD1628 2SD 1964 .


    OCR Scan     		2SD879 2SC3266 2SD965 2SD1624 2SC2873 2SD1119 2SD1963 2SD1692 2SD1233 2SC4339 2SB600 NEC 2SD965 2SD966 2SD2061 2SB600 1951b 2sc3677 2SC3421 2SD1483 2sd1944 PDF

    2SC3498

    Abstract: 25c2785 2SC3148 25c3311 25C3330 2SC3445 2SC3874 2SD1431 2SC3306 2SC2295
    Text: - tt Type No. E S Manuf. ft SANYO m Ä 3E TOSHIBA NEC B ±L HITACHI Ä ± ü FUJITSU T MATSUSHITA 2SC 3432 B m. 2SC4161 ZSU356Z • ’ SC2739 2SC 3433 a m 2SC4162 2SC3562 2SC3871 2 SC 3434 b m 2SC4423 2SC3306 2SC3210 2SC 3435 / B » 2SC4424 2SC3498 2SC 3436


    OCR Scan     		2SC3432 2SC3433 2SC3434 2SC3435 2SC3436 2SC3437 2SC3438 2SC3439 2SC3440 2SC3441 2SC3498 25c2785 2SC3148 25c3311 25C3330 2SC3445 2SC3874 2SD1431 2SC3306 2SC2295 PDF

    2SC4751

    Abstract: on 4772 2SC4767 2SC4667 2SC3892A 2SC4749 2SC3124 2SC4589 2sd1850 2SD2336
    Text: 198 - £ S « Type No. Manuf. 2SC 4740 H m SANYO 3C 2Ë TOSHIBA NEC S ÍL HITACHI * ± a FUJITSU T MATSUSHITA Ÿà 2SC 4745 a B 4 4 4 4 2SC3894 2SD1432 2SD2372 2SC 4748 J B IL 2SC383G 2SC3889A 2SD2373 2SC 4747 > 0 4 2SC3897 2SC4560 2SC 4748 2SC3277 2SC3306


    OCR Scan     		2SC4746 2SC4589 2SC3894 2SD2336 2SC3685 2SD1432 2SD2372 2SC4123 2SC3894 2SC4751 on 4772 2SC4767 2SC4667 2SC3892A 2SC4749 2SC3124 2SC4589 2sd1850 2SD2336 PDF

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		T258-OMI FAX06 2SC144 2SD466 2sc5266 PDF

    2SC3824

    Abstract: 2SC4359
    Text: Transistors Selection Guide bv Applications and Functions • Switching Power Transistors Application Veso VcEO le (V ) (V ) (A ) 150/200/ 250 Switching sp eed switching 5 Packag e (N o.) tf le Ib (V) (A ) (mA) < 1.6 5 1(A) (/¿s) MT3 MT4 (D43) (D46) T0-220(a) TO-220F(a) TO-220E TO-220D


    OCR Scan     		T0-220 O-220F O-220E O-220D 2SD1274/A6 2SD1680* A2SC4986 2SC4687 2SC4621 2SC3872 2SC3824 2SC4359 PDF

    2SC5282

    Abstract: No abstract text available
    Text: Transistors Selection Guide by Applications and Functions • Switching Power Transistors (continued) A p p li­ cation VcBO VcEO (V) (V) lr (A) (V) lc (A) High­ speed switch­ ing P ack ag e (No.) VcE(sat) Ib (mA) l/JS) MT3 (D40) MT4 (D41) r 0 -220(a) T0220F(a) TO-220E TO-220D N Type


    OCR Scan     		T0220F O-220E O-220D 2SC4768 2SC3868 2SC5063 2SC4533 2SC5032 2SC4953 2SC5104 2SC5282 PDF

    2sd2396

    Abstract: 2SD2005 2SC4614 2SD1547 2SD1554 2SD2004 2SC4290A 2sc4814 2SC4040 2SD1650
    Text: - ü £ T y p e No. / 2SD 2337 fö T te t te t te t s a 2SD 2338 □ — a t 2SD 2333 2SD 2334 ^ 2SD 2335 ^ 2SD 2336 / M anu f. « h m SANYO M TOSHIBA =£ « B HITACHI ÍI 2SD143Î 2SD23D0 2SD1878 2SD1545 2SD2311 2SD2252 2SD1547 2SC4744 2SD2251 2SD1547 2SC2882


    OCR Scan     		2SD2333 2SD1884 2SD1878 2SD2252 2SD2251 2SD143Î 2SD1545 2SD1547 2SD1587 2sd2396 2SD2005 2SC4614 2SD1554 2SD2004 2SC4290A 2sc4814 2SC4040 2SD1650 PDF

    2SC4420

    Abstract: 2sc5158
    Text: Transistors Selection Guide by Applications and Functions • Switching Power Transistors (continued) Package (No.) VcE(sat) Appli­ cation H igh­ sp eed sw itch­ ing VcBO VceO lc (V) (V) (A) ti (V) lc !b (A) (mA) ißs) TO-220F(a) (D55) TO-220E (D59) 450


    OCR Scan     		O-220F O-220E O-220D 2SC4768 2SC3868 2SC5032 2SC4953 2SC5063 2SC5104 2SC4533 2SC4420 2sc5158 PDF

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


    OCR Scan     		MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202 PDF