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Rochester Electronics LLC 2SC3399 SMALL SIGNAL BIPOLAR TRANSTR NPN
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DigiKey	2SC3399	Bulk			6,662	1 - 10 - 100 - 1000 - 10000 $0.05	Buy Now
Rochester Electronics LLC 2SC3399-AC TRANS PREBIAS NPN 50V 0.1A
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DigiKey	2SC3399-AC	Bulk			952	1 - 10 - 100 - 1000 $0.32 10000 $0.32	Buy Now
Rochester Electronics LLC 2SC3393S-AC BIP NPN 0.5A 50V
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DigiKey	2SC3393S-AC	Bulk			1,665	1 - 10 - 100 - 1000 - 10000 $0.18	Buy Now
Rochester Electronics LLC 2SC3393T-AC NPN EPITAXIAL PLANAR SILICON
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DigiKey	2SC3393T-AC	Bulk			2,664	1 - 10 - 100 - 1000 - 10000 $0.11	Buy Now
Rochester Electronics LLC 2SC3396-TB-E NPN SILICON TRANSISTOR
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DigiKey	2SC3396-TB-E	Bulk			5,323	1 - 10 - 100 - 1000 - 10000 $0.06	Buy Now

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2SC339 Datasheets (116)

Part	Manufacturer	Description	Datasheet Type	PDF
2SC339	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SC339	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SC339	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SC339	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2SC339	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SC339	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SC339	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC339	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SC339	Unknown	Cross Reference Datasheet	Scan	PDF
2SC3390	Hitachi Semiconductor	Silicon NPN Epitaxial	Original	PDF
2SC3390	Hitachi Semiconductor	Silicon NPN Transistor	Original	PDF
2SC3390	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SC3390	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SC3390	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF

2SC3390	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SC3390	Unknown	Cross Reference Datasheet	Scan	PDF
2SC3390B	Hitachi Semiconductor	Silicon NPN Epitaxial	Original	PDF
2SC3390B	Renesas Technology	Silicon NPN Epitaxial Transistor	Original	PDF
2SC3390C	Hitachi Semiconductor	Silicon NPN Epitaxial	Original	PDF
2SC3390C	Renesas Technology	Silicon NPN Epitaxial Transistor	Original	PDF

2SC339 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Hitachi DSA002755 Abstract: No abstract text available Text: 2SC3391 Silicon NPN Epitaxial Planar Application VHF amplifier, Mixer, Local oscillator Outline 2SC3391 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage	Original	PDF	2SC3391 Hitachi DSA002755
2SA1338 Abstract: marking ay marking al 2SC3392 Text: Ordering number:EN1421A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1338/2SC3392 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET process. · High breakdown voltage : VCEO= – 50V. · Large current capacitiy and high fT.	Original	PDF	EN1421A 2SA1338/2SC3392 2SA1338/2SC3392] 2SA1338 2SA1338 marking ay marking al 2SC3392
2SA1339 Abstract: 2sc3393 mt 1392 Text: Ordering number:EN1392A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1339/2SC3393 High-Speed Switching Applications Features Package Dimensions • Very small-sized package permitting sets to be smallsized, slim. · High breakdown voltage : VCEO= – 50V.	Original	PDF	EN1392A 2SA1339/2SC3393 2SA1339/2SC3393] 2SA1339 2SA1339 2sc3393 mt 1392
Untitled Abstract: No abstract text available Text: 2SC3398 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.50 h(FE) Max. Current gain.	Original	PDF	2SC3398 Freq250M resistor10k
Untitled Abstract: No abstract text available Text: 2SC3392-4 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.100 h(FE) Max. Current gain.200	Original	PDF	2SC3392-4 Freq300M
Untitled Abstract: No abstract text available Text: 2SC3391 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)20m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)0.5u @V(CBO) (V) (Test Condition)	Original	PDF	2SC3391 Freq450M
2SC3391 Abstract: 2SC535 Hitachi DSA00233 Text: 2SC3391 Silicon NPN Epitaxial Planar Application VHF amplifier, Mixer, Local oscillator Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SC3391 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage	Original	PDF	2SC3391 2SC3391 2SC535 Hitachi DSA00233
smd marking AY Abstract: 2SC3392 Text: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistors 2SC3392 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 High breakdown voltage : VCEO=50V. 0.55 Adoption of FBET process. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Large current capacitiy and high fT.	Original	PDF	2SC3392 OT-23 100mA 10IB1 -10IB2 smd marking AY 2SC3392
DTC144E Abstract: 2SC3399 HC144E KSR1204 Text: N PN 汕头华汕电子器件有限公司 D I G I TAL TRANSISTOR 对应国外型号 DTC144E,2SC3399,KSR1204 HC144E █ 主要用途 █ 外形图及引脚排列开关接口电路等。 █ 极限值（Ta=25℃） TO-92S T stg ——贮存温度………………………………… -55~150℃	Original	PDF	DTC144E 2SC3399 KSR1204 HC144E O-92S 300mW 100mA 10AIE HC144E KSR1204
2SA1338 Abstract: 2SC3392 ITR05058 Text: Ordering number : ENN1421B 2SA1338/2SC3392 SANYO Semiconductors DATA SHEET PNP/NPN Epitaxial Planar Silicon Transistor 2SA1338 / 2SC3392 High-Speed Switching Applications Package Dimensions • Adoption of FBET process. · High breakdown voltage : VCEO= – 50V.	Original	PDF	ENN1421B 2SA1338/2SC3392 2SA1338 2SC3392 2018B 2SA1338/2SC3392] 2SA1338 2SC3392 ITR05058
2SC3393 Abstract: 2SA1339 Text: 2SA1339 / 2SC3393 Ordering number : EN1392C PNP / NPN Epitaxial Planar Silicon Transistors 2SA1339 / 2SC3393 High-Speed Switching Applications Features • • • • Ultrasmall-sized package permitting sets to be smallsized,slim. High breakdown voltage : VCEO= – 50V.	Original	PDF	EN1392C 2SA1339 2SC3393 2SA1339 2SC3393
Untitled Abstract: No abstract text available Text: 2SC3392-7 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.280 h(FE) Max. Current gain.560	Original	PDF	2SC3392-7 Freq300M
M338 Abstract: J300j nj037 2SA1338 2SC3392 marking al WA1 marking M338 NPN Text: Ordering num ber:EN 1 4 2 1 A 2SA1338/2SC3392 No.1421A SANYO PNP/NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications I Features • • • • Adoption of FBET process High breakdown voltage: VCEO= - 50V Large current capacity and high fT	OCR Scan	PDF	2SA1338/2SC3392 2SA1338 60fficers M338 J300j nj037 2SC3392 marking al WA1 marking M338 NPN
2sc710 Abstract: 2sc1741 2SC366 2SC380 2sc944 2sC1674 2SC4641 2SC1815 2SC3393 2SC931 Text: - m € Type No. SANYO 2SC4641 S RH* •$. SIS* B t z i - H i ä drÜ 2SC3393 2SC3393 2SC4455 917 918 920 H 15 2SC2839 2SC 921 * 2SC 922 f 2SC 923 b B B B V m w. m. S «E -— 2SC2999 2SC2999 2SC4641 = H H * ;¥ # = = H ;¥ m n * 2SC 931 • 2SC 932 ^ 2SC 933 f-	OCR Scan	PDF	2SC4641 2SC1815 2SCS29 2SC174w 2SC3393 2SC366 2SC4455 2sc710 2sc1741 2SC380 2sc944 2sC1674 2SC1815 2SC931

Untitled Abstract: No abstract text available Text: 2SC3391 Silicon NPN Epitaxial Planar HITACHI Application V H F amplifier, M ixer, Local oscillator Outline SPAK 1 r 1 3 1. Emitter 2. Collector 3. Base 481 2SC3391 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VcBO	OCR Scan	PDF	2SC3391 2SC3391 2SC535.
Untitled Abstract: No abstract text available Text: H ITACH I 2SC3390 S IL IC O N N P N E P IT A X IA L „ <2U«i. _ LOW FREQUENCY LOW NOíSS AMPLIFIER •HF AMPLIFIE« jJ BiKri il i‘ ji. :j 1 „ K M < l l U ü t. 1 * * Ç-.I ¡i lì ¡ 3Í . Cv-ìf» •’> 111 î l a iS P A K I ABSOLUTE MAXIMUM RATINGS Ta=25T )	OCR Scan	PDF	2SC3390 2SC4580
2SA1341 Abstract: 2SC3395 transistors marking HJ k 2059 TRANSISTOR LCH10 BU 2058 SANYO CP TA RESISTOR 22E 1W transistor npn d 2058 Text: SANYO SEMI CONDUCTOR 2SA1341, 2SC3395 CORP E2E I> • TTìTOTb 0007325 S ■ T-37-13 T -3 S -U PN P/N P N Epitaxial Planar S ilico n Transisto rs ♦ 2 0 1 8A Switching Applications with Bias Resistances R1=47kO, R2=47kiì 1233C Applications • Switching circuit, inverter circuit, interface circuit, driver circuit.	OCR Scan	PDF	2SA1341, 2SC3395 r-37-13 T-3S-11 1233C 47kfl, 47kfi) 2SA1341 2SA1341 2SC3395 transistors marking HJ k 2059 TRANSISTOR LCH10 BU 2058 SANYO CP TA RESISTOR 22E 1W transistor npn d 2058
A1345 Abstract: 2SC3399 2SA1345 2sc339 Text: Ordering num ber: EN 1 2 8 7 C i 2SA1345/2SC3399 PNP/ NPN Epitaxial Planar Silicon Transistors SAiYO Switching Applications with Bias Resistance i A pplicationi Switching circuit, inverter, interface circuit, driver Feature» ► Built-in bias resistor (R*j=47k£l,	OCR Scan	PDF	1287C 2SA1345/2SC3399 47kft) 2SA1345 A1345 2SC3399 2sc339
Untitled Abstract: No abstract text available Text: Ordering number: EN 1392A _ 2SA1339/2SC3393 N0.1392A SA\YO PNP/ NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications Features • • • • Very small-sized package permitting sets to be small-sized, slim High breakdown voltage: Vc e o = ” 50V	OCR Scan	PDF	2SA1339/2SC3393 2SA1339 3197KI/1114KI
Untitled Abstract: No abstract text available Text: SANYO SEMICONDUCTOR 2SA1341, 2SC3395 CORP E2E I> • TTìTOTb 0007325 S ■ T-37-13 T - 3 S - U ♦ P N P /N P N Epitaxial Planar Silicon Transistors 2018A Switching Applications with Bias Resistances R1=47kO, R2=47kiì 1233C Applications • Switching circuit, inverter circuit, interface circuit, driver circuit.	OCR Scan	PDF	2SA1341, 2SC3395 T-37-13 1233C 47kfi) 2SA1341
Untitled Abstract: No abstract text available Text: Ordering number: EN 1287C 2SA1345/2SC3399 PNP/ NPN Epitaxial Planar Silicon Transistors Switching Applications _ with Bias Resistance Applications Switching circuit, inverter, interface circuit, driver Features • Built-in bias resistor (R i=47ki2, R2=47kiî).	OCR Scan	PDF	1287C 2SA1345/2SC3399 47ki2, 2SA1345 rO-92 3C-43
C3656 Abstract: C4397 c3399 A1678 transistor C4047 c3396 a1343 C3863 A1526 C4396 Text: Resistance-Contained Transistor F e a t u r e s if On-chip bias resistance •Cx Sma 11-sized package MCP.CP,SPA,NP ☆ Both PNP and NPN types are available. a le I C “ 1 O O m A ( ) : Ma i k i ng on MCP. CP. S e r i A p p i Abso ute Maximum Ratings 2SA1341(BL)/2SC3395(BY)	OCR Scan	PDF	11-sized 2SA1676 /2SC4396 2SA1677 /2SC4397 2SA1678 /2SC4398 2SA1722 /2SC4498 2SA1341 C3656 C4397 c3399 A1678 transistor C4047 c3396 a1343 C3863 A1526 C4396
MARKING AL Abstract: 2SA1338 Text: ¡ Ordering number EN 1 4 2 1 A J SA S.YO 2SA1338/2SC3392 N0 . 14 2 1 A PNP/NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications Features • • • • Adoption of FBET process High breakdown voltage: VCEO= - 50V Large current capacity and high fi>	OCR Scan	PDF	2SA1338/2SC3392 2SA1338 1114KI 1338/2S MARKING AL 2SA1338
XM21A Abstract: C-160304 2SA1338 2SC3392 A1338 00B7 Text: SANYO SEMICONDUCTOR CO RP 22E D 2SA1338, 2SC3392 • 7 ‘n7Q7fci 0 Q 0 7 0 4 Ö Q ■ T-37-15 T-3S-U P N P /N PN Epitaxial Planar Silicon Transistors 2018A High-Speed Switching Applications Features • Adoption of FBET process • High breakdown voltage; VCEO= ->50V	OCR Scan	PDF	2SA1338, 2SC3392 2018a XM21A 2SA1338 XM21A C-160304 2SA1338 A1338 00B7

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2SC339 Price and Stock

Rochester Electronics LLC 2SC3399

Rochester Electronics LLC 2SC3399-AC

Rochester Electronics LLC 2SC3393S-AC

Rochester Electronics LLC 2SC3393T-AC

Rochester Electronics LLC 2SC3396-TB-E

2SC339 Datasheets (116)

2SC339 Datasheets Context Search

Hitachi DSA002755

2SA1338

2SA1339

Untitled

Untitled

Untitled

2SC3391

smd marking AY

DTC144E

2SA1338

2SC3393

Untitled

M338

2sc710

Untitled

Untitled

2SA1341

A1345

Untitled

Untitled

Untitled

C3656

MARKING AL

XM21A