2SC3356 S2P Search Results

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Catalog Datasheet	MFG & Type	PDF	Document Tags
2SC3356 s2p Abstract: 2SC3356 2SC3356-A NE85633-T1B-A 2SC3356-T1B-A Text: A Business Partner of Renesas Electronics Corporation. Preliminary NE85633 / 2SC3356 Data Sheet R09DS0021EJ0300 Rev.3.00 NPN Silicon RF Transistor Jun 28, 2011 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold FEATURES	Original	PDF	NE85633 2SC3356 R09DS0021EJ0300 2SC3356 NE85633-T1B 2SC3356-T1B NE85633-A 2SC3356-A NE85633-T1B-A 2SC3356 s2p 2SC3356-T1B-A
2SC3356-T1B-A Abstract: 2SC3356 2SC3356 s2p 2SC3356-T1B Text: PreliminaryData Sheet 2SC3356 R09DS0021EJ0300 Rev.3.00 NPN Silicon RF Transistor Jun 28, 2011 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz	Original	PDF	2SC3356 R09DS0021EJ0300 2SC3356 2SC3356-T1B 2SC3356-A 2SC3356-T1B-A 2SC3356 s2p
2SC3356 s2p Abstract: 2SC3356 Application Note 2SC3356 nec marking 2sc3356 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz	Original	PDF	2SC3356 2SC3356-T1 2SC3356 s2p 2SC3356 Application Note 2SC3356 nec marking 2sc3356
2SC3356 s2p Abstract: 2SC3356 Application Note 2SC3356-T1B 2SC3356 R24 marking DATASHEET TRANSISTOR 2sc3356 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz	Original	PDF	2SC3356 2SC3356-T1B 2SC3356 s2p 2SC3356 Application Note 2SC3356-T1B 2SC3356 R24 marking DATASHEET TRANSISTOR 2sc3356
2SC3356 s2p Abstract: 2SC3356 Application Note 2SC3356 2SC3356-T1B Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
2sc3356 Abstract: 2SC3356-T1B 2SC3356 s2p marking r25 NPN 2SC3356 r25 TRANSISTOR 2sc3356 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PDF	2SC3356 2SC3356-T1B VCB30° PU10209JJ02V0DS L044-435-1588 X044-435-1579 2sc3356 2SC3356-T1B 2SC3356 s2p marking r25 NPN 2SC3356 r25 TRANSISTOR 2sc3356