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    Amphenol Aerospace JT00A-18-32SC(319)

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    Amphenol Aerospace JT07A-18-32SC(319)

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    Amphenol Aerospace JT06A-18-32SC(319)

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    KEC 2SC3198

    TRANSISTOR,BJT,NPN,50V V(BR)CEO,150MA I(C),TO-92
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    TRANSISTOR,BJT,NPN,50V V(BR)CEO,150MA I(C),TO-92
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    2SC319 Datasheets (97)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC319 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC319 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC319 Unknown Transistor Replacements Scan PDF
    2SC319 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC319 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC319 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC319 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC319 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC319 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC319 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC3190 Korea Electronics V(ceo): 30V I(c): 100mA P(c): 400mW PNP Silicon Transistor Scan PDF
    2SC3190 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3190 Unknown Cross Reference Datasheet Scan PDF
    2SC3190 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3190 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3191 Korea Electronics V(ceo): 30V I(c): 100mA P(c): 200mW PNP Silicon Transistor Scan PDF
    2SC3191 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3191 Unknown Cross Reference Datasheet Scan PDF
    2SC3191 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3191 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    2SC319 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3195

    Abstract: 2sc319* transistor
    Text: ST 2SC3195 NPN Silicon Epitaxial Planar Transistor High frequency low noise amplifier application VHF band amplifier application The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be


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    PDF 2SC3195 30MHz 100MHz, 2SC3195 2sc319* transistor

    2SC3198

    Abstract: 2SC3198 equivalent ST-2sc3198 transistor 2SC3198
    Text: ST 2SC3198 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    PDF 2SC3198 150mA 100mA, 30MHz 2SC3198 2SC3198 equivalent ST-2sc3198 transistor 2SC3198

    2sc3198

    Abstract: 2SC3198 equivalent transistor 2SC3198 KTA1266 GR KTA1266 transistor KTA1266
    Text: 2SC3198 EPITAXIAL PLANAR NPN TRANSISTOR C B A GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION N FEATURES Excellent h FE Linearity :h FE 2 =100(Typ.) at V CE =6V, I C =150mA :h FE (I C =0.1mA)/h FE (I C =2mA)=0.95(Typ.) Low Noise:NF=IdB(Typ.) at f=1kHz


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    PDF 2SC3198 150mA KTA1266 2sc3198 2SC3198 equivalent transistor 2SC3198 KTA1266 GR KTA1266 transistor

    2sc3197

    Abstract: No abstract text available
    Text: 2SC3197 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V) I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.200


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    PDF 2SC3197 Freq300M

    2SC3198

    Abstract: 2SC3198 Y transistor 2SC3198 ST-2sc3198
    Text: ST 2SC3198 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    PDF 2SC3198 150mA 100mA, 30MHz 2SC3198 2SC3198 Y transistor 2SC3198 ST-2sc3198

    2sC3199 transistor

    Abstract: 2SC3199 2SC3199 equivalent
    Text: ST 2SC3199 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    PDF 2SC3199 100mA, 2sC3199 transistor 2SC3199 2SC3199 equivalent

    2SC3190

    Abstract: low noise amplifier at 30MHz to
    Text: ST 2SC3190 NPN Silicon Epitaxial Planar Transistor High frequency low noise amplifier application HF band amplifier application The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be


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    PDF 2SC3190 30MHz 2SC3190 low noise amplifier at 30MHz to

    2SC3198

    Abstract: transistor 2SC3198 2SC3198 equivalent ST-2sc3198 2sc319* transistor 2SC3198 transistor
    Text: ST 2SC3198 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original
    PDF 2SC3198 150mA 100mA, 30MHz 2SC3198 transistor 2SC3198 2SC3198 equivalent ST-2sc3198 2sc319* transistor 2SC3198 transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC3199 TRANSISTOR NPN 1. EMITTER FEATURES z High Current Capability z High DC Current Gain z Small Package 2. COLLECTOR 3. BASE APPLICATIONS z Audio Amplifier Applications


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    PDF 2SC3199 100mA

    2SC3199

    Abstract: 2SK596 2SA733S 2SC945S 2SK156 2SC2710 2SC2785 2SC2786 2SC2787 2SC3488
    Text: TO-92S PACKAGE MX MICROELECTRONICS ● Applied for TV,AV and buzzers amplifiers. NPN TYPE ICBO OR Ptot Ic VCBO VCEO * ICEO ▲ ICES 2SC3199 2SC1815S 2SC945S 2SC1959S 2SA1015S 2SA733S 2SC2785 2SC2786 2SC2787 2SC3488 2SC2710 2SC1740S 2SC1741S AD825 VCES VCB


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    PDF O-92S 2SC3199 2SC1815S 2SC945S 2SC1959S 2SA1015S 2SA733S 2SC2785 2SC2786 2SC2787 2SC3199 2SK596 2SA733S 2SC945S 2SK156 2SC2710 2SC2785 2SC2786 2SC2787 2SC3488

    2sa1267

    Abstract: No abstract text available
    Text: 2SC3199 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER Package: TO-92S * Complement to 2SA1267 * Collector Current Ic=150 mA ABSOLUTE MAXIMUM RATINGS at Tamb=250C Characteristic


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    PDF 2SC3199 O-92S 2SA1267 100uA 100mA 10Kohm 2sa1267

    Untitled

    Abstract: No abstract text available
    Text: 2SC3190 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V) I(C) Max. (A)100m# Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)400m @I(C) (A) (Test Condition)10m


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    PDF 2SC3190 Freq80M

    2SC3190

    Abstract: 2SC3190 transistor 2SC319
    Text: ST 2SC3190 NPN Silicon Epitaxial Planar Transistor High frequency low noise amplifier application HF band amplifier application The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be


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    PDF 2SC3190 30MHz 2SC3190 2SC3190 transistor 2SC319

    2SC3199

    Abstract: 2SC3199 equivalent 2sC3199 transistor
    Text: ST 2SC3199 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    PDF 2SC3199 100mA, 2SC3199 2SC3199 equivalent 2sC3199 transistor

    2SA1267

    Abstract: No abstract text available
    Text: 2SA1267 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER Package: TO-92S * Complement to 2SC3199 * Collector-Emitter Voltage VCEO=-50V ABSOLUTE MAXIMUM RATINGS at Tamb=250C Characteristic


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    PDF 2SA1267 O-92S 2SC3199 -100uA -100mA -10mA 2SA1267

    2SC3199

    Abstract: 2sC3199 transistor 2SC3199 equivalent
    Text: ST 2SC3199 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    PDF 2SC3199 100mA, 2SC3199 2sC3199 transistor 2SC3199 equivalent

    2SC3195

    Abstract: No abstract text available
    Text: ST 2SC3195 NPN Silicon Epitaxial Planar Transistor High frequency low noise amplifier application VHF band amplifier application The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be


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    PDF 2SC3195 30MHz 100MHz, 2SC3195

    2SC3198

    Abstract: transistor 2SC3198 2SC3198 equivalent ST-2sc3198 transistor 2SC3198 data sheet free download f-30MHz 2SC3198 transistor
    Text: ST 2SC3198 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    PDF 2SC3198 150mA 100mA, 30MHz 2SC3198 transistor 2SC3198 2SC3198 equivalent ST-2sc3198 transistor 2SC3198 data sheet free download f-30MHz 2SC3198 transistor

    2SC3199GR

    Abstract: No abstract text available
    Text: 2SC3199 0.15 A , 50 V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES    TO-92S High Current Capability High DC Current Gain Small Package REF. A B C


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    PDF 2SC3199 O-92S 2SC3199-O 2SC3199-Y 2SC3199-GR 31-Jul-2012 2SC3199GR

    2SC3199

    Abstract: 2sc319* transistor 2SC3199GR 2sC3199 transistor
    Text: 2SC3199 0.15 A , 50 V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES    TO-92S High Current Capability High DC Current Gain Small Package REF. A B C


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    PDF 2SC3199 O-92S 2SC3199-O 2SC3199-Y 2SC3199-GR 22-Aug-2013 2SC3199 2sc319* transistor 2SC3199GR 2sC3199 transistor

    2SC3194

    Abstract: No abstract text available
    Text: 2SC3194 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V) I(C) Max. (A)20m Absolute Max. Power Diss. (W)100m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


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    PDF 2SC3194 Freq600MÃ

    2SC460B

    Abstract: 2SC458C 2SC458D 2sc945q 2SC763 2SC752G-TM 2SC536F 2SC3199Y 2SC3355 2SC458
    Text: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) *c (A) @ & (mA) f, c* @ 'c (mA) fes c„ Freq CDIL (MHz) (pF) Case Max Style ^CBO ^CES> V EB0 (V) Min (V) Min (V) Min 2SC3199Y


    OCR Scan
    PDF 2SC3199Y O-92-1 2SC3355 2SC383TM 2SC388ATK 2SC752GTM1 2SC460B 2SC458C 2SC458D 2sc945q 2SC763 2SC752G-TM 2SC536F 2SC458

    Untitled

    Abstract: No abstract text available
    Text: P « FORWARD INTERNATIONAL ELECTRONICS LTD, 2SC3199L SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE AUDIO FREQUENCY AMPLIFIER FEATURES •High DC Current Gain: Hfe=70-700. •Excellent Hfe Linearity :Hfe 0*1mA /Hfe(2mA)=0.95(TYP.)


    OCR Scan
    PDF 2SC3199L to2SA1267L 100uA 100mA 10kohm

    2SC536E

    Abstract: 2SC536G 2SC458C 2SC460B 2SC536F 2SC458D 2SC945P 2SC945Q 2SC752G-TM 2SC3355
    Text: TO-92 Plastic Package Transistors NPN Maxi mum F atings Type No. ^CB V CEi ^EBO (V) Min (V) Min Min 2SC3199Y 50 50 5 2SC3355 20 12 2SC383TM 50 2SC388AT Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pp <c (W) (A) @Tc=25°c hFE e *CBO ^CB


    OCR Scan
    PDF 2SC3199Y O-92-1 2SC3355 2SC383TM 2SC388AT 2SC763 2SC9022 rO-92-1 2SC945 2SC536E 2SC536G 2SC458C 2SC460B 2SC536F 2SC458D 2SC945P 2SC945Q 2SC752G-TM