2SA1093
Abstract: 2SC2563
Text: Inchange Semiconductor Product Specification 2SA1093 Silicon PNP Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SC2563 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier applicatios PINNING PIN DESCRIPTION
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2SA1093
2SC2563
-120V;
2SA1093
2SC2563
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2sa1012
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., 2SA1012 NPN EPITAXIAL SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION . FEATURES *Low collector saturation voltage VCE sat =-0.4V(max.) at Ic=-3A *High speed switching time: tS=1.0µs(Typ.) *Complementary to 2SC2562 1 TO-220
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2SA1012
2SC2562
O-220
2SA1012L
2SA1012-TA3-T
2SA1012L-TA3-T
O-220
QW-R209-008
2sa1012
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2SA1012
Abstract: No abstract text available
Text: UTC 2SA1012 SILICON PNP EPITAXIAL TRANSISTOR HIGH CURRENT SWITCHING APPLICATION FEATURES *Low collector saturation voltage Vce sat =-0.4V(max.) at Ic=-3A *High speed switching time tstg=1.0µs(Typ.) *Complementary to 2SC2562 1 TO-251 1:BASE 2: COLLECTOR 3: EMITTER
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2SA1012
2SC2562
O-251
QW-R213-012
2SA1012
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2SA1094
Abstract: 2SC2564
Text: Inchange Semiconductor Product Specification 2SA1094 Silicon PNP Power Transistors DESCRIPTION •With MT-200 package ·Complement to type 2SC2564 APPLICATIONS ·For power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to
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2SA1094
MT-200
2SC2564
MT-200)
-140V;
2SA1094
2SC2564
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2SC2563
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2SC2563 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·High power dissipation APPLICATIONS ·For audio power amplifier and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to
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2SC2563
2SC2563
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2SC2563
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SC2563 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·High power dissipation APPLICATIONS ·For audio power amplifier and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to
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2SC2563
2SC2563
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2sc2562
Abstract: 2SA1012
Text: SavantIC Semiconductor Product Specification 2SC2562 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA1012 ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING
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2SC2562
O-220
2SA1012
O-220)
2sc2562
2SA1012
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Untitled
Abstract: No abstract text available
Text: 2SC2563 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.55 h(FE) Max. Current gain.240
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2SC2563
Freq90M
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KELTRON
Abstract: b0949 B0539 sot6001 2SC2516M B0123 2n5978
Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 . 30 2S01667 2S01904 2SC25620 IOC2562 IOC3299 SOT9011 SOT9011 SOT9011 ~~t:J62Y 35 40 2S01395 SML1612A SML1622A SML1632A SMl1642 SML1652 SML1662 SML7412 ~~tj:~~ 45 50 55 60 SML3402 SML3422 SML85502 SML85507
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1000n
127var
220AB
220AB
20var
KELTRON
b0949
B0539
sot6001
2SC2516M
B0123
2n5978
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2SA1095
Abstract: 2Sc2565 2SC25 2SA1095 2SC2565
Text: JMnic Product Specification 2SA1095 Silicon PNP Power Transistors ・ DESCRIPTION ・With MT-200 package ・Complement to type 2SC2565 ・High breakdown voltage ・High transition frequency APPLICATIONS ・Power amplifier applications ・Recommended for 100W high-fidelity audio
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2SA1095
MT-200
2SC2565
MT-200)
-160V;
2SA1095
2Sc2565
2SC25
2SA1095 2SC2565
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2SC2564
Abstract: 2sa1094
Text: JMnic Product Specification 2SC2564 Silicon NPN Power Transistors ・ DESCRIPTION ・With MT-200 package ・Complement to type 2SA1094 ・High transition frequency APPLICATIONS ・For power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2
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2SC2564
MT-200
2SA1094
MT-200)
2SC2564
2sa1094
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2sc2562
Abstract: 2SA1012
Text: Power Transistors www.jmnic.com 2SA1012 Silicon PNP Transistors Features BCE ﹒With TO-220 package ﹒Complementary to 2SC2562 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage -60 V VCEO Collector to emitter voltage
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2SA1012
O-220
2SC2562
O-220
-10mA
2sc2562
2SA1012
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2SC2564
Abstract: 2SA1094
Text: Inchange Semiconductor Product Specification 2SC2564 Silicon NPN Power Transistors ・ DESCRIPTION ・With MT-200 package ・Complement to type 2SA1094 ・High transition frequency APPLICATIONS ・For power amplifier applications PINNING see Fig.2 PIN DESCRIPTION
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2SC2564
MT-200
2SA1094
MT-200)
2SC2564
2SA1094
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2SA1012
Abstract: transistor 2sA1012 2sc2562 HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A 50V 1A PNP power transistor
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1012 DESCRIPTION •Low Collector Saturation Voltage :VCE sat = -0.4(V)(Max)@IC= -3A ·High Switching Speed ·Complement to Type 2SC2562 APPLICATIONS ·Designed for high current switching applications.
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2SA1012
2SC2562
2SA1012
transistor 2sA1012
2sc2562
HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A
50V 1A PNP power transistor
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2SA1095
Abstract: 2Sc2565 2SC2565 specification power
Text: SavantIC Semiconductor Product Specification 2SA1095 Silicon PNP Power Transistors DESCRIPTION •With MT-200 package ·Complement to type 2SC2565 ·High breakdown voltage ·High transition frequency APPLICATIONS ·Power amplifier applications ·Recommended for 100W high-fidelity audio
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2SA1095
MT-200
2SC2565
MT-200)
-160V;
2SA1095
2Sc2565
2SC2565 specification power
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2SA1012
Abstract: 2sc2562
Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1012 PNP SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION . FEATURES *Low Collector Saturation Voltage VCE SAT =-0.4V(max.) At Ic=-3A *High Speed Switching Time: tS=1.0 s(Typ.) *Complementary To 2SC2562 ORDERING INFORMATION
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2SA1012
2SC2562
2SA1012L-x-TA3-T
2SA1012G-x-TA3-T
2SA1012L-x-TF3-T
2SA1012G-x-TF3-T
2SA1012L-x-TM3-T
2SA1012G-x-TM3-T
2SA1012L-x-TN3-R
2SA1012G-x-TN3-R
2SA1012
2sc2562
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2SA1012
Abstract: 50V 1A PNP power transistor
Text: 2SA1012 PNP TO-220 Transistor TO-220 1. BASE 2. COLLECTOTR 3. EMITTER Features 1 2 3 HIGH CURRENT SWITCHING APPLICATIONS. Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A High Speed Swithing Time : tstg = 1.0us (Typ.) Complementary to 2SC2562
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2SA1012
O-220
O-220
2SC2562
tp300S,
-100A,
150mA
50V 1A PNP power transistor
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Untitled
Abstract: No abstract text available
Text: 2SC2566 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)15m Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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2SC2566
Freq650M
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2SC2562
Abstract: 2SC2562 Toshiba
Text: 2SC2562 SILICON NPN EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS U nit in m m HIGH CURRENT SW IT C H IN G APPLICATIONS. • • • Low Collector Saturation Voltage : v CE(sat) = °-4V (Max.) (at Ic= 3A ) High Speed Switching Time : tgtg=1.0,us (Typ.)
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2SC2562
2SA1012.
O-220AB
SC-46
2-10A1A
2SC2562
2SC2562 Toshiba
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2SC2563
Abstract: 2SA1093
Text: AOK AOK Semiconductor Product Specification 2SA1093 S ilicon PNP Power Transistors DESCRIPTION • With TO-3P l package • Complement to type 2SC2563 • High transition frequency APPLICATIONS • Audio frequency power amplifier applicatios PINNING PIN DESCRIPTION
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2SA1093
2SC2563
-50mA
-12CV;
2SC2563
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Untitled
Abstract: No abstract text available
Text: ~5h TOSHIBA { D IS CR ETE/O PT O} 9097250 TOSHIBA <DISCRETE/OPTO 2SC2562 DE I T D T T E S D □ □ □ 7 S S Eì fl | ' L)7 - 3 ¿ - o f J7559 SILICON NPN EPITAXIA L TYPE PCT PROCESS) INDUSTRIAL APPLICATIONS _ Unit in mm HIGH CURRENT SWITCHING APPLICATIONS.
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2SC2562
J7559
2SA1012.
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2SA1094 TOSHIBA
Abstract: 2SA1094 2SC2564 2SA109 2SC2564 TOSHIBA
Text: Sb TOSHIBA {DISCRETE/OPTO! DE l'ïCHTESD 00075fci5 3 «y 9097250 T O S H IB A 5öC 0 T 5 6 5 CD I S C R E T E / O P T O 2SC2564 5 7 -35-13 S IL IC O N NPN E P IT A X IA L TYPE PCT PROCESS) Unit in nun 3 1 .3 M A X . POWER AMPLIFIER APPLICATIONS. FEATURES:
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00075fci5
2SC2564
90MHz
2SA1094.
2SA1094 TOSHIBA
2SA1094
2SC2564
2SA109
2SC2564 TOSHIBA
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2SC2562
Abstract: 2SC2562 Toshiba
Text: 2SC2562 SILICON NPN EPITAXIAL TYPE INDUSTRIAL APPLICATIONS _ Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 1D.3MAX. FEATURES: 0 3-6±0.3 • Low Collector Saturation Voltage : vCE sat =0-4v (Max-) (at IC=3A) • High Speed Switching Time : ts tg=1.0iJS (Typ.)
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2SC2562
2SA1012.
-55vL50
12CK240
7CH140,
2SC2562
2SC2562 Toshiba
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Untitled
Abstract: No abstract text available
Text: T oshiba Sb -c d i s c r e t e / o p t o j - 9097250 TOSHIBA DISCRETE/OPTO 2SC2564 DE 1^ 01 72 50 DQ07SbS 3 ^¿'c OT56"5 Ú'7r32>-¿3 SILIC O N NPN E P IT A X IA L TYPE (PCT PROCESS) Unit in mm POWER AMPLIFIER APPLICATIONS. 31,0 FEATURES: 2,0 34.4 ± 0 .3
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DQ07SbS
2SC2564
90MHz
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