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    2SC2120 TRANSISTOR Search Results

    2SC2120 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SC2120 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC2120

    Abstract: 2SA950
    Text: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SC2120 2SA950 SC-43 2SC2120 2SA950

    2SA950

    Abstract: 2SC2120
    Text: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SC2120 2SA950 SC-43 2SA950 2SC2120

    2SC2120

    Abstract: 2SA950
    Text: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 · 1 watts amplifier applications. · Complementary to 2SA950 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SC2120 2SA950 SC-43 2SC2120 2SA950

    2SC2120

    Abstract: 2SA950
    Text: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SC2120 2SA950 2SC2120 2SA950

    2SC2120

    Abstract: No abstract text available
    Text: DC COMPONENTS CO., LTD. 2SC2120 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency amplifier applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Collector 3 = Base o


    Original     		PDF 2SC2120 500mA, 100mA, 2SC2120

    2SC2120Y

    Abstract: 2SC2120 2SC2120-Y
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2120-O 2SC2120-Y Features x x x x Complementary Pair With 2SA950 Epoxy meets UL 94 V-0 flammability rating


    Original     		PDF 2SC2120-O 2SC2120-Y 2SA950 2SC2120Y 2SC2120 2SC2120-Y

    2222s

    Abstract: 2SA950 2SC2120
    Text: 1112SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 1112SC2120 2SC2120 2SA950 SC-43 2222s 2SA950 2SC2120

    2SC2120

    Abstract: 2sC2120 y transistor transistor 2sc2120
    Text: ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2120 700mA 500mA, 2SC2120 2sC2120 y transistor transistor 2sc2120

    Plastic Encapsulate Transistors

    Abstract: 2SC2120 2sc2120 equivalent
    Text: 2SC2120 NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter 1 2 Value Units VCBO Collector-Base Voltage


    Original     		PDF 2SC2120 100mA 01-Jun-2002 Plastic Encapsulate Transistors 2SC2120 2sc2120 equivalent

    2SA950

    Abstract: 2SC2120 2SA950 Y
    Text: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 · 1 W output applications · Complementary to 2SC2120 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating


    Original     		PDF 2SA950 2SC2120 SC-43 2SA950 2SC2120 2SA950 Y

    2SA950

    Abstract: 2SC2120
    Text: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • 1 W output applications • Complementary to 2SC2120 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SA950 2SC2120 SC-43 2SA950 2SC2120

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA950 TRANSISTOR PNP TO-92 FEATURES y 1W Output Applications y Complementary to 2SC2120 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol


    Original     		PDF 2SA950 2SC2120 -10mA -100mA -700mA -500mA, -20mA

    2SC2120

    Abstract: 2sc2120 equivalent
    Text: ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2120 100mA 700mA 500mA, 2SC2120 2sc2120 equivalent

    2SC2120

    Abstract: 2sc2120 equivalent 2sC2120 transistor 2sC2120 y transistor
    Text: ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2120 700mA 500mA, 2SC2120 2sc2120 equivalent 2sC2120 transistor 2sC2120 y transistor

    Untitled

    Abstract: No abstract text available
    Text: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • 1 W output applications • Complementary to 2SC2120 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating


    Original     		PDF 2SA950 2SC2120 SC-43

    IC 7411 DATA SHEET

    Abstract: IC 7411 2sC2120 transistor f 7416 IC 7411 datasheet IC 7416 2SC2120 Voltts IC 7416 datasheet 7411 IC
    Text: TO-92 PLASTIC-ENCAPSULATE TRANSISTORS 2SC2120 TRANSISTOR NPN FEATURES Power dissipation PCM: 0.6W (Tamb=25ºC) Collector Current TO-92 ICM: 0.8A 1. EMITTER Collector-base voltage V 2. COLLECTOR : 35V (BR) CBO Operating and storage junction temperature range


    Original     		PDF 2SC2120 500mA, 2SC2120 IC 7411 DATA SHEET IC 7411 2sC2120 transistor f 7416 IC 7411 datasheet IC 7416 Voltts IC 7416 datasheet 7411 IC

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2120-O 2SC2120-Y Features x x x x Complementary Pair With 2SA950 Epoxy meets UL 94 V-0 flammability rating


    Original     		PDF 2SC2120-O 2SC2120-Y 2SA950 150rom

    2SA950

    Abstract: 2sa950y 2SA950-Y 2sc212 2SA950 PNP 2SA950-O 2SC2120
    Text: 2SA950 -0.8A , -35V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES   1W output applications Complementary to 2SC2120 G H Emitter Collector Base


    Original     		PDF 2SA950 2SC2120 2SA950-O 2SA950-Y 14-Feb-2011 -10mA, -100mA -700mA -500mA, -20mA 2SA950 2sa950y 2SA950-Y 2sc212 2SA950 PNP 2SA950-O 2SC2120

    2SA950 PNP

    Abstract: 2SA950 2SC2120 35VCEO
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA950 TRANSISTOR PNP TO-92 FEATURES y 1W output applications y complementary to 2SC2120 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol


    Original     		PDF 2SA950 2SC2120 -100mA -700mA -500mA, -20mA -10mA 2SA950 PNP 2SA950 2SC2120 35VCEO

    Untitled

    Abstract: No abstract text available
    Text: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • 1 W output applications • Complementary to 2SC2120 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SA950 2SC2120 SC-43

    2SC2120

    Abstract: 2sc2120 equivalent 2sC2120 y transistor
    Text: ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2120 100mA 700mA 500mA, 2SC2120 2sc2120 equivalent 2sC2120 y transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC2120 TRANSISTOR NPN 1. EMITTER FEATURES z High DC Current Gain z Complementary to 2SA950 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF 2SC2120 2SA950 100mA 500mA

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors 2SC2120 TRANSISTOR NPN TO-92 FEATURE Power dissipation 1. EMITTER PCM: 0.6 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.8 A Collector-base voltage V(BR)CBO: 35 V Operating and storage junction temperature range


    Original     		PDF 2SC2120 100mA

    Untitled

    Abstract: No abstract text available
    Text: FORWARD INTIRNATONAL ELECTRONICS LID . 2SC2120 SEMICONDUCTOR "" TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY A M PLIFIER H IG H FREQUENCY OSC. Package: TO-92 * Complement to 2SA950 * Collector-Emitter Voltage VCEO=30V C haracteristic Symbol R ating


    OCR Scan     		PDF 2SC2120 2SA950 100uA 100mA 500mA 500mA