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    2SC21 Price and Stock

    Hirose Electric Co Ltd HR12-SC-211

    CONTACT SOCKET 26-30AWG CRIMP
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    DigiKey HR12-SC-211 Cut Tape 25,577 1
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    HR12-SC-211 Reel 10,000 10,000
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    Mouser Electronics HR12-SC-211 30,957
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    Newark HR12-SC-211 Cut Tape 8,900 1
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    TME HR12-SC-211 10,000
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    Hirose Electric Co Ltd HR12-SC-212

    CONTACT SOCKET 26-30AWG CRIMP
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    DigiKey HR12-SC-212 Cut Tape 23,950 1
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    HR12-SC-212 Reel 10,000 10,000
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    Mouser Electronics HR12-SC-212 21,414
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    Newark HR12-SC-212 Cut Tape 9,506 1
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    HR12-SC-212 Reel 10,000
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    Hirose Electric Co Ltd BH12-SC-213

    FEMALE POWER CONTACT, 14-16 AWG,
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    DigiKey BH12-SC-213 Cut Tape 13,830 1
    • 1 $0.86
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    BH12-SC-213 Reel 5,000 5,000
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    Newark BH12-SC-213 Reel 4,945 5,000
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    BH12-SC-213 Cut Tape 4,190 10
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    Hirose Electric Co Ltd QR-P1-12S-C(21)

    CONN RCPT HSG RACK & PNL 12P BLK
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    DigiKey QR-P1-12S-C(21) Bulk 462 1
    • 1 $5.09
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    • 100 $3.3796
    • 1000 $2.8
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    Comchip Technology Corporation Ltd CDBD2SC21200-G

    DIODE SIL CARB 1.2KV 6.2A TO263
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    DigiKey CDBD2SC21200-G Tube 381 1
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    Mouser Electronics CDBD2SC21200-G
    • 1 $3.69
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    NAC CDBD2SC21200-G Tube 50 1
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    2SC21 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC21 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC21 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC21 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC21 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC21 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC21 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC21 Unknown Vintage Transistor Datasheets Scan PDF
    2SC21 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC21 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC21 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC21 Unknown Cross Reference Datasheet Scan PDF
    2SC210 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC210 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC210 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC210 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC210 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC210 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC210 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC210 Unknown Cross Reference Datasheet Scan PDF
    2SC2100 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    ...

    2SC21 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC2139

    Abstract: 400V switching transistor 400V voltage regulator npn transistor 400V DC DC converter 5v to 400V NPN transistor for switching applications, 400V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2139 DESCRIPTION •High Collector-Emitter Breakdown Voltage: V BR CEO= 400V (Min) ·High Switching Speed APPLICATIONS ·Switching regulator and high voltage switching applications.


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    PDF 2SC2139 2SC2139 400V switching transistor 400V voltage regulator npn transistor 400V DC DC converter 5v to 400V NPN transistor for switching applications, 400V

    2SC2120

    Abstract: No abstract text available
    Text: DC COMPONENTS CO., LTD. 2SC2120 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency amplifier applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Collector 3 = Base o


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    PDF 2SC2120 500mA, 100mA, 2SC2120

    2SC2151

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC2151 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor controls PINNING See Fig.2 PIN DESCRIPTION


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    PDF 2SC2151 2SC2151

    2SC2120

    Abstract: 2SA950
    Text: 2SC2120 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC2120 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。: hFE (1) = 100~320 • B 型プッシュプルで 1 W の出力が得られます。


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    PDF 2SC2120 2SA950 SC-43 2SC2120 2SA950

    2SC2168

    Abstract: VCEO200V
    Text: SavantIC Semiconductor Product Specification 2SC2168 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High collector-emitter breakdown voltage : VCEO=200V min APPLICATIONS ·Power amplifier applications ·TV vertical deflection applications


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    PDF 2SC2168 O-220 2SC2168 VCEO200V

    2SC2189

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC2189 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation APPLICATIONS ·For high speed switching and power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base


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    PDF 2SC2189 2SC2189

    Untitled

    Abstract: No abstract text available
    Text: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • 1 W output applications • Complementary to 2SC2120 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating


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    PDF 2SA950 2SC2120 SC-43

    Delco

    Abstract: delco ic 180T2A 2SC1777 2N1556 2N5034 2N5035 180T2C MOTOROLA 2N1539 1405 Motorola
    Text: POWER SILICON NPN Ic Item Number Part Number I C 5 10 20 25081 25081 SK3272 25015 2N5034 2N5034 2N5034 2N5035 .v :g~~~ 25 30 40514 B0197 B0197 B0243 B0291 B0291 B0291 151-05 ~~~:g~ 35 40 40542 2N6374 2SC2491 2SC2198 25016 25050 2N1512 40627 :g~~j 45 50 -


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC2104 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)35 I(C) Max. (A)800m Absolute Max. Power Diss. (W)7.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


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    PDF 2SC2104

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SC2188 Silicon NPN epitaxial planar type For intermediate frequency amplification of TV image Unit: mm 2.5±0.1 • Absolute Maximum Ratings 1.0 4.5±0.1 0.45±0.05 0.55±0.1 Symbol Ratings Unit Collector to base voltage VCBO 45 V Collector to emitter voltage


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    PDF 2SC2188

    2SC2131

    Abstract: No abstract text available
    Text: ^s.mi-Conau.cto'L ^Pioaueti, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. OUTLINE DRAWING Dimensions ,n mm «!9-39 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC2131 is a silicon NPN epitaxial planar type transistor designed


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    PDF 2SC2131 500MHz 15CVs

    IC 7411 DATA SHEET

    Abstract: IC 7411 2sC2120 transistor f 7416 IC 7411 datasheet IC 7416 2SC2120 Voltts IC 7416 datasheet 7411 IC
    Text: TO-92 PLASTIC-ENCAPSULATE TRANSISTORS 2SC2120 TRANSISTOR NPN FEATURES Power dissipation PCM: 0.6W (Tamb=25ºC) Collector Current TO-92 ICM: 0.8A 1. EMITTER Collector-base voltage V 2. COLLECTOR : 35V (BR) CBO Operating and storage junction temperature range


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    PDF 2SC2120 500mA, 2SC2120 IC 7411 DATA SHEET IC 7411 2sC2120 transistor f 7416 IC 7411 datasheet IC 7416 Voltts IC 7416 datasheet 7411 IC

    2SC2120

    Abstract: 2SA950
    Text: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


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    PDF 2SC2120 2SA950 2SC2120 2SA950

    2sc2188

    Abstract: No abstract text available
    Text: Transistor 2SC2188 Silicon NPN epitaxial planer type For intermediate frequency amplification of TV image Unit: mm 6.9±0.1 1.0 4.5±0.1 7 0. 0.85 4.1±0.2 ● High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as


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    PDF 2SC2188 2sc2188

    P104W

    Abstract: 2SC2104
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2104 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES: . Output Power : P0=3W Min. (f=470MHz, VCC=12.6V, P1=0.4W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VcC=15V, Pi=0.4W, f=470MHz


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    PDF 2SC2104 470MHz, 470MHz 470MHz P104W 2SC2104

    2SC2178

    Abstract: copper wire
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2178 Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : Output Power : Po=15W Min. ( f=175MHz, VCC=12.5V, Pi=1.3W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCC=15V, Pl=1.3W, f=175MHz


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    PDF 2SC2178 175MHz, 175MHz 8-10H1A l75MHz, 2SC2178 copper wire

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPTO} P' . — — ~5b D0074Tfl 3 DE I ^ O T V E S O — 9097250 TOSHIBA CDIS C R E T E / O P T O 5 òC D Y - 3 3-/3 07^98 2SC2181 SILICON NPN EPITA X IA L PLANAR TYPE Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. 2 -0 3 .8 ± a 1


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    PDF D0074Tfl 2SC2181 175MHz, 175MHz

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DI SC RE TE /O PT O} 9097250 TOSHIBA St. DE 1 ^ 7 5 5 0 56C 0 7 4 8 0 QOD74ñO h f- 2SC2102 C D IS C R E T E / O P T O SILICON NPN EPITA X IA L PLANAR TYPE _ Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : Output Power : Po=.l5W Min.)


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    PDF QOD74Ã 2SC2102 175MHz, 175MHz 01/iF

    2SA950

    Abstract: 2SC2120
    Text: TOSHIBA 2SA950 2SA950 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS • • • . 5.1 M AX. High hpE : hRE = 100~320 IW Output Applications Complementary to 2SC2120 0.45 0.55 M A X. 0.45 M A X IM U M RATINGS (Ta = 25°C)


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    PDF 2SA950 2SC2120 SC-43 2SA950 2SC2120

    2SC1260

    Abstract: 2SC1815 2sc1424 2SC944 2SC930 2SC2094 2SC1681 2SC2021 2sc2990 2SC1345
    Text: - « m * 2SC 15 2 8 2SC 1529 € tt T y p e No. M Manuf. SANYO H £ = £ S TOSHIBA 2SC2102 B H NEC ¿ HITACHI « ± FUJITSU Ü fò 2SC299Ö 2SC2888 □ T MATSUSHITA MITSUBISHI — 117 A ROHM 2SC2034 2SC1260 * 2SC 1537 □- A 2SC930 * 2SC 15 3 8 □- A 2SC930


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    PDF 2SC2102 2SC2888 2SC2990 2SC2094 2SC1260 2SC930 2SC380 2SC923 2SC1345 2SC2021 2SC1260 2SC1815 2sc1424 2SC944 2SC2094 2SC1681 2SC2021 2SC1345

    2sc2888

    Abstract: 2SC2926 2SC2166 2sc1047 2sc1907 2SC387A 2SD1270 2Sd917 2SC787 2sc2314
    Text: - 96 - sa € * * * * * * Type No. 2SC 740 2SC 7 412SC 742 2SC 743 2SC 745 2SC 746 2SC 748 * 2SC 749 * 2SC 751 2SC 752 * 2SC 753 * 2SC 754 * 2SC 755 * 2SC 756A a € Manuf. z m SANYO # z m Z «±ii t±M «±S 2SC2183 S drài 2SC2999 2SC4455 s 0 s V — —


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    PDF 2SC740 2SC741 2SC742 2SC743 2SC745 2SC746 2SC748 2SC387A 2SC998 2SC549 2sc2888 2SC2926 2SC2166 2sc1047 2sc1907 2SD1270 2Sd917 2SC787 2sc2314

    2sc2188

    Abstract: 2SC2153 2SC218
    Text: PANASONIC INDL/E LE Ki SE MI} 72C D | [^35054 E h T 3 - / 2SC 2153. 2SC2153 ' > U =1 y NP N 7 V — NP N Planar iS J l];& iiitIffl/R F Amplifier • ^ /F e a tu r e s • f > (a iê g c fT *''i '''o /H ig h fT • ‘Üij|li?-;!r Crb • ^<— V ^ /L o w Crb


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    PDF 2SC2153. 2SC2153 250mW/Potting 250mW 2sc2188 2SC2153 2SC218

    2SC2120-0

    Abstract: 2SA950 2SC2120
    Text: TO SH IBA 2SA950 2SA950 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • • • . 5.1 MAX. High hpE • hpE = 100~320 IW Output Applications Complementary to 2SC2120 0.45 0.55 MAX. 0.45 MAXIMUM RATINGS (Ta = 25°C)


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    PDF 2SA950 2SC2120 SC-43 2SC2120-0 2SA950 2SC2120

    2SC2120

    Abstract: 2SA950 2sC2120 y transistor transistor 2sc2120
    Text: 2SC2120 TO SH IBA 2 S C 2 1 20 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • High hEE : hEE (i) = 100~320 • 1 Watts Amplifier Applications. • Complementary to 2SA950 . 5.1 MAX. 0.45 0.55 MAX.


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    PDF 2SC2120 2SA950 SC-43 2SC2120 2SA950 2sC2120 y transistor transistor 2sc2120