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    2SB80 Search Results

    2SB80 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SB805-T1-AZ Renesas Electronics Corporation Small Signal Bipolar Transistors, POMM, / Visit Renesas Electronics Corporation
    2SB804-AZ Renesas Electronics Corporation Small Signal Bipolar Transistors, POMM, / Visit Renesas Electronics Corporation
    2SB805-T2-AZ Renesas Electronics Corporation Small Signal Bipolar Transistors, POMM, / Visit Renesas Electronics Corporation
    2SB800-T1-AZ Renesas Electronics Corporation Small Signal Bipolar Transistors, POMM, / Visit Renesas Electronics Corporation
    2SB804-T1-AZ Renesas Electronics Corporation Small Signal Bipolar Transistors, POMM, / Visit Renesas Electronics Corporation
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    2SB80 Price and Stock

    Taiwan Semiconductor D2SB80

    BRIDGE RECT 1PHASE 800V 2A GBL
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    DigiKey D2SB80 Tube 1,200 1
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    Avnet Americas D2SB80 Tube 1,200
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    Mouser Electronics D2SB80 1,196
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    TME D2SB80 1
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    EBV Elektronik D2SB80 8 Weeks 1,200
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    Taiwan Semiconductor D2SB80H

    2A, 800V, STANDARD BRIDGE RECTIF
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    DigiKey D2SB80H Tube 1,200 1
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    Avnet Americas D2SB80H Tube 1,200
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    Mouser Electronics D2SB80H
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    Micro Commercial Components G2SB80-BP

    DIODE GPP 2A GBL
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    Rochester Electronics LLC 2SB808F-SPA

    MOSFET N-CH
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    Vishay Semiconductors G2SB80-M3-51

    BRIDGE RECT 1PHASE 800V 1.5A GBL
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    2SB80 Datasheets (104)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB80 General Instrument Bridge Rectifier Cross Reference Guide Scan PDF
    2SB80 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB80 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SB80 Unknown Cross Reference Datasheet Scan PDF
    2SB80 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SB80 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB80 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB80 Unknown Vintage Transistor Datasheets Scan PDF
    2SB80 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB80 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB800 Kexin PNP Silicon Epitaxial Transistor Original PDF
    2SB800 NEC Semiconductor Selection Guide 1995 Original PDF
    2SB800 NEC Semiconductor Selection Guide Original PDF
    2SB800 TY Semiconductor PNP Silicon Epitaxial Transistor - SOT-89 Original PDF
    2SB800 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB800 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SB800 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB800 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    2SB800 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB800 Unknown The Transistor Manual (Japanese) 1993 Scan PDF

    2SB80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sot89 TRANSISTOR MARKING AV

    Abstract: 640 smd transistor marking ma2580 SmD TRANSISTOR av smd transistor marking Av aW sot89 2SB804 smd transistor marking 26 hFE CLASSIFICATION Marking marking AW
    Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB804 Features World standard miniature package:SOT-89 High collector to base voltage:VCBO -100V Excellent DC current gain linearity. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage


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    PDF 2SB804 OT-89 -100V -500mA, -50mA sot89 TRANSISTOR MARKING AV 640 smd transistor marking ma2580 SmD TRANSISTOR av smd transistor marking Av aW sot89 2SB804 smd transistor marking 26 hFE CLASSIFICATION Marking marking AW

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB806 SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2. 50 ±0 .1 4. 00 ±0 .1 • Features ● High collector to emitter voltage: VCEO>-120V.


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    PDF 2SB806 -120V. -500mA -50mA -10mA

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB800 Features World standard miniature package:SOT-89 High collector to emitter voltage:VCEO -80V Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -80 V Collector to emitter voltage VCEO -80


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    PDF 2SB800 OT-89 -300mA, -30mA

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB806 SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2. 50 ±0 .1 4. 00 ±0 .1 • Features ● High collector to emitter voltage: VCEO>-120V.


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    PDF 2SB806 -120V. -500mA -50mA -10mA

    2SD1028

    Abstract: 2SD1031 2SD1036 2SD1094 2SD1087 2SD1013 2SD1019 2sd1037 equivalent 2SD1028 2SD1004
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1001 80 5 300 2W 150 200 1 50 140* 7 2SB800 2SD1002 45 5 1A


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    PDF 2SD1001 2SB800 2SD1002 2SD1003 2SD1004 2SD1005 2SB804 2SD1006 2SB805 2SD1007 2SD1028 2SD1031 2SD1036 2SD1094 2SD1087 2SD1013 2SD1019 2sd1037 equivalent 2SD1028 2SD1004

    2SC536E

    Abstract: 2SC536E,F sanyo 2SC536e R1820 2SB808 2SA60 2SD1012 ITR08383 ITR08384 ITR08385
    Text: Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 0.7 : 2SB808 3 1.3 1 : Emitter


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    PDF ENN676D 2SB808/2SD1012 2SB808/2SD1012] 2SB808 2SC536E 2SC536E,F sanyo 2SC536e R1820 2SB808 2SA60 2SD1012 ITR08383 ITR08384 ITR08385

    SMD TRANSISTOR FL

    Abstract: smd transistor fl pnp SMD FM IC 2SB800 SMD transistor Marking fk MARKING FM
    Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB800 Features World standard miniature package:SOT-89 High collector to emitter voltage:VCEO -80V Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -80 V Collector to emitter voltage


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    PDF 2SB800 OT-89 -300mA, -30mA SMD TRANSISTOR FL smd transistor fl pnp SMD FM IC 2SB800 SMD transistor Marking fk MARKING FM

    2SA114

    Abstract: 2SA912 2SA554 MALLORY 150 BSW23 2sb807 2sa1285af LOW-POWER SILICON PNP 2sb788 2SA119
    Text: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 PTC103 A5T3498 2N3494 2N3498 MMBT8599 HSE175 BCX28 BC558B BCX35 PTC127 ~~~1b71 15 20 2SA1285E 2SA1285F 2SA1285G 2SB788 SOR5400 (A) 2SA1145 2SA912 2SA11450 ~~~~~~~XE 25 2SA1123 2SB792 2SB807 2SA1285AF


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    PDF PTC103 A5T3498 2N3494 2N3498 MMBT8599 HSE175 BCX28 BC558B BCX35 PTC127 2SA114 2SA912 2SA554 MALLORY 150 BSW23 2sb807 2sa1285af LOW-POWER SILICON PNP 2sb788 2SA119

    2SD1012

    Abstract: 2SA608 transistor 2sa608 2SB808
    Text: Ordering number:676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033 [2SB808/2SD1012] B : Base C : Collector E : Emitter : 2SB808 Specifications SANYO : SPA Absolute Maximum Ratings at Ta = 25˚C


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    PDF 2SB808/2SD1012 2SB808/2SD1012] 2SB808 2SD1012 2SA608 transistor 2sa608 2SB808

    SMD TRANSISTOR MARKING km

    Abstract: transistor smd marking KL smd marking Kk transistor smd KL transistor smd marking KK smd marking KM KM MARKING MARKING KL 2SB805 hFE CLASSIFICATION Marking
    Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB805 Features High collector to emitter voltage: VCEO -100V. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -100 V Collector-emitter voltage VCEO -100 V Emitter-base voltage


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    PDF 2SB805 -100V. -100V, -100mA -500mA -50mA -10mA SMD TRANSISTOR MARKING km transistor smd marking KL smd marking Kk transistor smd KL transistor smd marking KK smd marking KM KM MARKING MARKING KL 2SB805 hFE CLASSIFICATION Marking

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB805 Features High collector to emitter voltage: VCEO -100V. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -100 V Collector-emitter voltage VCEO -100 V Emitter-base voltage VEBO -5 V IC -0.7


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    PDF 2SB805 -100V. -100V, -100mA -500mA -50mA -10mA

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB804 Features World standard miniature package:SOT-89 High collector to base voltage:VCBO -100V Excellent DC current gain linearity. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -100 V


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    PDF 2SB804 OT-89 -100V -500mA, -50mA

    2SC536E

    Abstract: 2SA608e 2SC536E,F sanyo 2SC536e 2sd1100 2SB808 2SD1012 ITR08383 ITR08384 ITR08385
    Text: Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 0.7 : 2SB808 3 1.3 1 : Emitter


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    PDF ENN676D 2SB808/2SD1012 2SB808/2SD1012] 2SB808 2SC536E 2SA608e 2SC536E,F sanyo 2SC536e 2sd1100 2SB808 2SD1012 ITR08383 ITR08384 ITR08385

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet N0801R R07DS0728EJ0100 Rev.1.00 Mar 30, 2012 PNP SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0801S. VCEO = 80 V IC DC = 1.0 A Miniature package SOT-23F (2SB804: Package variation of 3pPoMM) PRODUCT LINEUP Part Number


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    PDF N0801R R07DS0728EJ0100 N0801S. OT-23F 2SB804: N0801R-T1-AT 3000p/reel PVSF0003ZA-A 0126g

    2SB807

    Abstract: 2SD1009 2SD100 j y w marking mini class t amplifier MARKING 5 Y
    Text: 2SB807 b - ^ y V 7 .S 2SB807 '> U zj v PNP x kf^f +'> t PNP Epitaxial Planar ïÉïiiiÎîfÆffi^Tia^fëffl/High Voltage Low-noise Amplifier 2SD1009£ ] /Complementary Pair with 2SD1009 Unit ^ mm 4.6max. 1.8max.i • # ^ /F eatu res *<m9 *r*05 - j • u v 9 9 * -x. = -y 9 W ± . Vceo ^ S ^ 'o / H i g h V CE0


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    PDF 2SB807 2SD10091 2SD1009 48max. 53max. SC-62 -100V, -30mA, 10niA 2SB807 2SD1009 2SD100 j y w marking mini class t amplifier MARKING 5 Y

    MEI-1202

    Abstract: 2SB800 2SD1001 IEI-1213 MF-1134 TC-5473B marking lp nec sot89
    Text: DATA SHEET SILICON TRANSISTOR 2SB800 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SB 800 is designed for audio frequency power am plifier application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • World Standard M iniature Package


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    PDF 2SB800 2SB800 MEI-1202 2SD1001 IEI-1213 MF-1134 TC-5473B marking lp nec sot89

    2S880

    Abstract: 2S8805 baw 92 2SB805
    Text: SILICON TRA N SISTO R S 2SB805,2SB806 PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION T he 2SB805 and 2SB806 are designed f o r audio freq uency pow er a m p lifie r app lication, especially in H y b rid Integrated Circuits. FEA TU RES • W orld Standard M in ia tu re Package :


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    PDF 2SB805 2SB806 2SB806 2SD1006 2SB806) 2SB805) 2SD1007 2SB805, 2S880 2S8805 baw 92

    Untitled

    Abstract: No abstract text available
    Text: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SB800 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTIO N The 2SB800 is designed fo r audio frequency power a m plifier application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE D IM ENSIONS


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    PDF 2SB800 2SB800 2SD1001

    Untitled

    Abstract: No abstract text available
    Text: | Ordering number: EN 6 7 6 P SA%YO i l _ 2SB808/2SD1012 PNP/ NPN Epitaxial Planar Silicon Transistors No.676D Low-Voltage Large-Current _Amp Applications : 2SB808 Ta=25 °C C o lle c to r to Base V o ltag e vCBO C o lle c to r to E m itte r V o ltag e


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    PDF 2SB808/2SD1012 2SB808 2SD1012) 400Hz

    2sd1006-hk

    Abstract: 2SD1007 2SB806 2SD1006 sot89 transistor JB 9e sot-89 2SD1007-HP SK FN 521
    Text: NEC '> > ; = ! > h =7 > i> 7 . 9 S ilic o n T ra n s is to r 2SD1006,1007 o ^ -fv 7 4 ' < / r ^ 7 \ v ° -7 ^ iz y 2 S B 8 0 6 t = ¡ > 7 ° ' 9 > 9 U 0 O 2SB805, 1.5 + 0.1 * Ê # Ît* Æ :fê T a = 25 °C) 2SD1006 2SD1007 # »§• -t til m i 3 v- 9 9 ■


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    PDF 2SD1006/1007 O2SB805, 2SB806 2SD1006 2SD1007 -fl50 PWS10 cycleS50 OT-89) 2sd1006-hk 2SD1007 2SB806 sot89 transistor JB 9e sot-89 2SD1007-HP SK FN 521

    2SB805

    Abstract: 2SB806 2SD1006 2SD1007 2SB806-KP
    Text: S ilic o n T ra n s is to rs 2SB805/2SB806 P N P i m i; =1 > h ^ + it o o -t —r ' 4 tfè,Ts-^> K y -i '</T ^ F 7 ” -y l ' i c S i S T - t o 2 S D 1 0 0 6 , 2 S D 1 0 0 7 t=i>y" 'S 9 > 9 ' T to T a = 2 5 °C ) m § 99 I V • - î — »§• x a V 9 9 ■ x- l ~y 9 FbTÜJÎ


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    PDF 2SB805/2SB806 2SD1006, 2SD1007 2SB805 2SB806 pws10 cycles50 mmx16 sot-89) 2SD1006 2SB806-KP

    2S880

    Abstract: 2SB805 kp 3z 2SB806 2SD1006 2SD1007 TC547
    Text: DATA SHEET SILICON TRANSISTORS 2SB805,2SB806 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SB805 and 2SB806 are designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package :


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    PDF 2SB805 2SB806 2SB806 2S880 kp 3z 2SD1006 2SD1007 TC547

    Untitled

    Abstract: No abstract text available
    Text: fVEC SILICON TRANSISTOR ElfCTR 0ND EV IC 2SB804 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTIOI The 2SB804 designed fo r audio frequency power a m plifier application, especially in H ybrid Integrated Circuits. FEATURES • W orld Standard M iniature Package


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    PDF 2SB804 2SB804 2SD1005

    A249

    Abstract: No abstract text available
    Text: DATA SHEET NEC / SILICON TRANSISTORS 2SB805,2SB806 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DE SC R IPTIO N T he 2SB805 and 2SB806 are designed fo r audio frequency pow er a m p lifie r app lication, especially in H y b rid Integrated Circuits. FE A TU R E S


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    PDF 2SB805 2SB806 2SB806 2SB806) 2SB805I 2SD1007 A249