2SB1274
Abstract: 2SD1913 82055 D2000 transistor
Text: Ordering number : ENN2246B 2SB1274/2SD1913 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1274/2SD1913 60V/3A Low-Frequency Power Amplifier Applications Applications • Package Dimensions General power amplifier. unit : mm 2041A [2SB1274/2SD1913] • 16.0
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ENN2246B
2SB1274/2SD1913
2SB1274/2SD1913]
2SB1274
O-220ML
2SB1274
2SD1913
82055
D2000 transistor
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2SD1913
Abstract: 2SB1274
Text: SavantIC Semiconductor Product Specification 2SD1913 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SB1274 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS
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2SD1913
O-220F
2SB1274
O-220F)
2SD1913
2SB1274
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2sb1274
Abstract: 2SB1274 equivalent 2SD1913 2SB127
Text: Inchange Semiconductor Product Specification 2SB1274 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1913 ・High reliability. ・High breakdown voltage ・Low saturation voltage. ・Wide area of safe operation APPLICATIONS
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2SB1274
O-220F
2SD1913
O-220F)
2sb1274
2SB1274 equivalent
2SD1913
2SB127
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2sB1274 transistor
Abstract: 2SB1274 transistor 2sb1274 GM322400
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1274 DESCRIPTION •High Reliability ·Low Collector Saturation Voltage : VCE sat = -1.0V(Max)@IC= -2A ·Wide Area of Safe Operation APPLICATIONS ·Designed for low frequency power amplifier applications.
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2SB1274
2sB1274 transistor
2SB1274
transistor 2sb1274
GM322400
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2SD1913
Abstract: 2SB1274
Text: Inchange Semiconductor Product Specification 2SD1913 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SB1274 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS
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2SD1913
O-220F
2SB1274
O-220F)
2SD1913
2SB1274
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2SB1274
Abstract: 2SD1913 2SB1274 R
Text: SavantIC Semiconductor Product Specification 2SB1274 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD1913 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS
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2SB1274
O-220F
2SD1913
O-220F)
2SB1274
2SD1913
2SB1274 R
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB1274 TRANSISTOR PNP TO-220 FEATURES 1. BASE z z z z Wide ASO (Adoption of MBIT Process). Low Saturation Voltage. High Reliability. High Breakdown Voltage. 2. COLLECTOR
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O-220
2SB1274
O-220
-500mA
-200mA
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Untitled
Abstract: No abstract text available
Text: 2SB1274 -3A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-220J FEATURES General Purpose Switching and Amplification. Wide ASO Adoption of MBIT Process Low Saturation Voltage.
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2SB1274
O-220J
2SB1274-Q
2SB1274-R
2SB1274-S
-500mA
-200mA
23-Aug-2012
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB1274 TRANSISTOR PNP TO-220 1. BASE FEATURES 2. COLLECTOR z z z z Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage.
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O-220
2SB1274
O-220
-500mA
-200mA
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2sB1274 transistor
Abstract: 2SB1274
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB1274 TRANSISTOR PNP TO-220 1. BASE FEATURES 2. COLLECTOR z z z z Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage.
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O-220
2SB1274
O-220
-500mA
-200mA
2sB1274 transistor
2SB1274
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2SB1274
Abstract: No abstract text available
Text: 2SB1274 -3A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-220J FEATURES General Purpose Switching and Amplification. Wide ASO Adoption of MBIT Process
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2SB1274
O-220J
-500mA
-200mA
25-Jun-2013
2SB1274
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Untitled
Abstract: No abstract text available
Text: 2SB1274 PNP TO-220 Transistor TO-220 1. BASE 2. COLLECTOR Features 1 2 3. EMITTER 3 Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol
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2SB1274
O-220
O-220
-200mA
-500mA
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STK411-230E
Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
UPC2581V
PAL005A
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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TRANSISTOR DATASHEET D1555
Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440
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2N109
2N1304
2N1305
2N1307
2N1613
2N1711
2N1893
2N2102
2N2148
2N2165
TRANSISTOR DATASHEET D1555
d1555 transistor
TRANSISTOR D1651
D1555
D1557
D1554
d1651
transistor s1854
transistor d1555
transistor d1878
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Transistor TT 2246
Abstract: TT 2246 2SB1274 ENN2246B 2SD1913 Sb127 sd1913
Text: Ordering number: ENN2246eT| PN P /N PN Epitaxial Planar Silicon Transistors 2SB1274/2SD1913 60V/3A Low-Frequency Power Amplifier Applications Applications Package Dimensions • General power amplifier. unit : mm 2041A Features • • • • • Wide ASO Adoption o f M BIT process .
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ENN2246B
2SB1274/2SD1913
2SB1274
2SB1274/2SD1913]
O-220ML
Transistor TT 2246
TT 2246
2SB1274
ENN2246B
2SD1913
Sb127
sd1913
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82055
Abstract: 2SD1913 ENN2246B 2SB1274 2SBB1274
Text: | Ordering num ber: ENN2246B [ PNP/NPN Epitaxial Planar Silicon Transistors 2S B 1274/2S D 1913 60V/3A Low-Frequency Power Amplifier Applications Applications Package Dimensions • General power amplifier. unit : mm 2041A [2 S B 12 74/2 S D 1913] 10.0 Features
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ENN2246B
2SB1274/2SD1913
2SB1274/2SD1913]
2SB1274
O-220ML
82055
2SD1913
ENN2246B
2SB1274
2SBB1274
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TRANSISTORS SANYO
Abstract: bma150 CMA500 126ML 35VCEO
Text: SAÜYO General-Purpose Transistors Sanyo general-purpose transistors are designed to meet every high-performance requirement. They have wide application. They are easy to use because of large current capacity and wide ASO. die Smal 1— s i gna 1 Tr-ans i s t o r s .
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2SB632/K
2SD612/K
2SB1142
2SD1682
atings/Ta-25'
2SB1346
2SD2027
T0-220
2SB1273
2SD1912
TRANSISTORS SANYO
bma150
CMA500
126ML
35VCEO
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2SA1622
Abstract: 2SC4639 sanyo 2SD313 marking ANs 2SA1782 2SA1783 2SC4640 2SC4641 T0-126ML
Text: SA0YO General-Purpose Transistors Sanyo general-purpose transistors are designed to meet every high-performance requirement. They have wide application. They are easy to use because of large current capacity and wide ASO. ate S m a l 1 — s 1 g n a 1 T r a n s i s t o r - s .
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Tc-25
2SA1622
2SC4211CL)
2SA178KGS)
2SC4639
2SA1782
2SC4640
2SB507
2SD313
T0-220
sanyo
marking ANs
2SA1783
2SC4641
T0-126ML
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2SD313
Abstract: transistor 2sC3781 2SD1159 2sa128
Text: SAUYO Micaless T0-220ML P a c k a g e Power Transistors F e a t u r e s * Less cost and man-hour because of no insulator required for mounting * High-density mounting available because of plastic-covered heat sink of device *More collector dissipation available when a device alone is used
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T0-220ML
T0-220
2SA1469
2SC3746
2SA1470
2SC3747
2SA1471
2SC3748
2SB1134
2SD1667
2SD313
transistor 2sC3781
2SD1159
2sa128
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SB145
Abstract: 2sd1159 hc/2SB824 transistor 2sb507 sanyo 2Sd1666 2sa128 2SB824 transistor 2sd313
Text: SAfíYO Micaless T0-220ML P a c k a g e Power Transistors F e a t u r e s ♦ Less cost and man-hour because of no insulator required for mounting * High-density mounting available because of plastic-covered heat sink of device ♦ More collector dissipation available when a device alone is used
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T0-220ML
T0-220
2SA1469
2SC3746
2SA1470
2SC3747
2SA1471
2SC3748
2SB1134
2SD1667
SB145
2sd1159
hc/2SB824 transistor
2sb507 sanyo
2Sd1666
2sa128
2SB824 transistor
2sd313
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audio amplifier POWER TRANSISTORS
Abstract: 2sc3807 2SK669 mosfet analog switch 500 W POWER AMPLIFIER 2SA1692 2SA1763 2SB511 2SK1840 audio power amplifier
Text: Continued from previous page Absolute maximum ratings Package Device tSfP I Applications VCBO VCEO Ve» W V) « •C ; m w m I I Electrical characteristics (Tt = 25 ”C) i Icbo m u Vcb max (jiA) V » m [¡G B O *>FE # Vce *te I te hfE I Vce (mA) (V)
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2SB632K
T0126
2SD612K
2SA1692*
2SC3807
2SC3808
2SB511
2SD325
2SB514
audio amplifier POWER TRANSISTORS
2SK669
mosfet analog switch
500 W POWER AMPLIFIER
2SA1692
2SA1763
2SK1840
audio power amplifier
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2SC4641
Abstract: sma MARKING mp sanyo transistor 501 mosfet transistor marking WMM 2SA1622 2SA1782 2SA1783 MCP6 Marking sanyo 2SC4639
Text: General-Purpose Transistors Sanyo g e n e r a l - p u r p o s e t r a n s i s t o r s a r e d e s ig n e d to meet e v e ry h ig h -p erfo rm a n ce req u irem en t. They h av e w ide a p p l i c a t i o n . They a r e e a s y to use b ecau se o f la r g e c u r r e n t c a p a c ity and wide ASO.
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Tc-25T:
Ratings/Ta-25t
2SA1622
2SC421KL)
2SA178KGS)
2SC4639
2SA1782
2SC4640
T0-126LP
T0-220CI
2SC4641
sma MARKING mp
sanyo transistor
501 mosfet transistor
marking WMM
2SA1783
MCP6 Marking sanyo
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RTIP144C
Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.
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2SB1186
2SB1186A
2SA1304
2SA1306
2SA1305
2SB1274
2SB1015
2SB1133
2SB1287
2SB1185
RTIP144C
RTIN141C
RTIN141S
2SD947 equivalent
2SD612K
equivalent of transistor 2SA1115
RTIN241C
rtip241
2sd880 equivalent
RTIN140C
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TO-32-070
Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)
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T0220ML
TO-32-070
2SA1678
FC102
2SC4449
2SA1416
2SJ193
2sk283
2sC4106 application notes
2SC3383
FC124
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