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    onsemi 2SA1798S

    2SA1798 - PNP Epitaxial Planar Silicon Transistor For 20V/8A Switching Applications '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SA1798S 9,789 1
    • 1 $0.025
    • 10 $0.025
    • 100 $0.0235
    • 1000 $0.0213
    • 10000 $0.0213
    Buy Now

    2SA1798 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1798 Sanyo Semiconductor PNP Epitaxial Planar Silicon Transistors, 20V/8A Switching Applications Original PDF
    2SA1798 Sanyo Semiconductor PNP Epitaxial Planar Silicon Transistor Original PDF
    2SA1798 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1798 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1798 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1798 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1798 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1798R Sanyo Semiconductor PNP Epitaxial Planar Silicon Transistor 20V 8A Scan PDF
    2SA1798S Sanyo Semiconductor PNP Epitaxial Planar Silicon Transistor 20V 8A Scan PDF
    2SA1798T Sanyo Semiconductor PNP Epitaxial Planar Silicon Transistor 20V 8A Scan PDF

    2SA1798 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1798

    Abstract: No abstract text available
    Text: Ordering number:EN3709 PNP Epitaxial Planar Silicon Transistors 2SA1798 20V/8A Switching Applications Features Package Dimensions • Adoption of MBIT processes. · Low saturation voltage. · Fast switching speed. · Large current capacity. unit:mm 2042A [2SA1798]


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    PDF EN3709 2SA1798 2SA1798] O-126ML 2SA1798

    2sa179

    Abstract: 2SA1798 ITR04719
    Text: Ordering number:ENN3709 PNP Epitaxial Planar Silicon Transistors 2SA1798 20V/8A Switching Applications Features Package Dimensions • Adoption of MBIT processes. · Low saturation voltage. · Fast switching speed. · Large current capacity. unit:mm 2042B [2SA1798]


    Original
    PDF ENN3709 2SA1798 2042B 2SA1798] O-126ML 2sa179 2SA1798 ITR04719

    2SA1798

    Abstract: ITR04719 ITR04720 N120
    Text: 注文コード No. N 3 7 0 9 2SA1798 No. N 3 7 0 9 N1099 2SA1798 特長 PNP エピタキシァルプレーナ形シリコントランジスタ 大電流スイッチング用 ・MBIT プロセス採用。 ・飽和電圧が低い。 ・スイッチングスピードが速い。


    Original
    PDF 2SA1798 N1099 500mA 500mA 100R200 140S280 200T400 2SA1798 ITR04719 ITR04720 N120

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original
    PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    2sc5694

    Abstract: TO-126LP 2sd1683 2SC5607 2sa1770 2SA2023 2SA2203 sanyo, 2sa2039 2sa2039 2SC5707
    Text: Low-Saturation Voltage Transistors Shortform Table Lead Type Package Series CONTENTS • ■ ■ ■ ■ ・ ・ ・ ・ ・ ・ ・ Packages Quick selection guide Road Map Application Example Lineup according to packages SPA NP NMP MP TP FLP


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    PDF O-126 O-126ML O-126LP 2SB1165 2SD1722 2SB1166 2SD1723 2SB1167 2sc5694 TO-126LP 2sd1683 2SC5607 2sa1770 2SA2023 2SA2203 sanyo, 2sa2039 2sa2039 2SC5707

    2SA1798

    Abstract: K 4005 transistor
    Text: I O rdering num ber: EN3709 z I SAMYO i 2SA1798 No.3709 f PN P Epitaxial P lan ar Silicon Transistor 20V/8A Switching Applications I F e a tu re s • Adoption of MBIT processes. • Low saturation voltage. • F ast switching speed. • Large current capacity.


    OCR Scan
    PDF EN3709 2SA1798 2SA1798 K 4005 transistor

    2SA1798

    Abstract: No abstract text available
    Text: Ordering num ber: EN3709 2SA1798 P N P E pitaxial P la n ar Silicon T ransistor 20V/8A Switching Applications F e a tu r e s •Adoption of MBIT processes. • Low satu ratio n voltage. ■F ast sw itching speed. • Large cu rren t capacity. A b so lu te M axim um R a tin g s a t Ta = 25°C


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    PDF EN3709 2SA1798 Tc-25Â -20ViIE

    2SB1205

    Abstract: 2SB1143 2sc4675
    Text: SAfÊYO LOW-SATURATI ON VOLTAGE TR SERI ES Small-Signal Transistors. NO. 2 (*)MBIT process technology "New manufacturing method,Multi Base Island Transistors” For PNP, (-) sign is omitted. *:Tc=25’C. #:Contains base to emitter resistance(RBE). Type No.


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    PDF 2SB764/2SD863 2SB892/2SD1207* 2SB927/2SD1247* 2SB985/2SD1347* 2SB1131* 2SD1145 2SA1641/2SC4306* 2SB1201/2SD1801* 2SB1202/2SD1802* 2SB1203/2SD1803* 2SB1205 2SB1143 2sc4675

    transistor 2SB1142

    Abstract: sanyo transistor tt series 2SB612K 2SB1143 2SA1750 2sc3788
    Text: SA0YO M IC A LE SS T 0-126M L T R A N SIST O R S F e a t u r e s ♦ Reduced cost and man-hour because of no insulator required for mounting ♦ Plastic-covered heat sink facilitating high-density mounting ♦ Increased collector dissipation when a transistor alone is operated


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    PDF 0-126M T0-126ML) T0-126ML O-126 MT950123TR transistor 2SB1142 sanyo transistor tt series 2SB612K 2SB1143 2SA1750 2sc3788

    2SA1833

    Abstract: 2SA1842 2SC4614 2SA1770 2SA1812 2SA1772 2SA1773 2SA1775 2SA1776 2SA1777
    Text: 50 O V 2 5 U 2SA1770 Vc b o VcEO V (V) HV SW -180 !C C D C ) (A) *EPfàTc=25t;) Pc Pc* (W) (W) -160 -1.5 1 M ICBO (max) (*A) VcB (V) -1 -120 M (min) 1i ft (max) Vc e (V) 100 400 -5 (Ta=25°C) Ic / I e (A) [*EPÍátyp (max) (V) (V) ic (A) -0.1 -0.5 -1.2


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    PDF 2SA1770 2SA1772 2SA1773 2SA1775 2SA1776 2SA1777 O-126MOD) 2SA1810 2SA1812 2SA1813 2SA1833 2SA1842 2SC4614 2SA1770 2SA1812 2SA1772 2SA1773 2SA1777

    2SB1205

    Abstract: 2SD1801
    Text: SAfiYO L O W - S A T U R A T IO N V O L T A G E TR S E R I E S Small-Signal Transistors.NO. 1 The low-saturation voltage TR series, being excellent in VCE(sat) and switching characteristic at high current, are suited for use in inverters, converters, power amplifiers, electrical equipment.


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    PDF T0-126LP MT95C123TR 2SB1205 2SD1801

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    2SB1205

    Abstract: 2S81119 2Sk222 2sa128
    Text: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf


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    PDF TQ220ML T0220ML T03PB 2SB1205 2S81119 2Sk222 2sa128

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    PDF

    2SB1267

    Abstract: No abstract text available
    Text: C o n tin u e d fro m p re v io u s p a g e Absolute maximum ratings Device Package type Electrical characteristics Ta = 25 °C VcHsat) max @ lc - I b ; Applications VcBO (V) VCEO (V) lc (A) Pc (W) Ti (°C) ; VcE(sat) max (mV) lc (A) Ib (mA) ! It @ VCE •te


    OCR Scan
    PDF 2SB986 T0126 2SD1348 2SB1141 T0126ML 2SD1236L T0220 2SB921L 2SB1267