2SA1761 Search Results

2SA1761 Price and Stock

Filter by Manufacturer


Toshiba America Electronic Components 2SA1761,F(J TRANS PNP 50V 3A TO92MOD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SA1761,F(J	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components 2SA1761,T6F(M TRANS PNP 50V 3A TO92MOD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SA1761,T6F(M	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components 2SA1761,T6F(J TRANS PNP 50V 3A TO92MOD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SA1761,T6F(J	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

2SA1761 Datasheets (11)

Part	Manufacturer	Description	Datasheet Type	PDF
2SA1761	Toshiba	High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: LSTM; Number Of Pins: 3; Viewing Angle: radial taping; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SC4604	Original	PDF
2SA1761	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SA1761	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SA1761	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SA1761	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SA1761	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SA1761	Toshiba	Silicon PNP transistor for power amplifier and power switching applications	Scan	PDF
2SA1761	Toshiba	TRANSISTOR SILICON PNP EPITAXIAL TYPE	Scan	PDF
2SA1761,F(J	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 3A 50V TO226-3	Original	PDF
2SA1761,T6F(J	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 3A 50V TO226-3	Original	PDF
2SA1761,T6F(M	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 3A 50V TO226-3	Original	PDF

2SA1761 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
A1761 Abstract: 2SA1761 2SC4604 Text: 2SA1761 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1761 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −0.5 A) • High-speed switching: tstg = 0.2 s (typ.)	Original	PDF	2SA1761 2SC4604. A1761 2SA1761 2SC4604
A1761 Abstract: 2SA1761 2SC4604 Text: 2SA1761 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1761 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −0.5 A) • High-speed switching: tstg = 0.2 s (typ.)	Original	PDF	2SA1761 2SC4604. A1761 2SA1761 2SC4604
A1761 Abstract: No abstract text available Text: 2SA1761 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1761 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High-speed switching: tstg = 0.2 µs (typ.)	Original	PDF	2SA1761 2SC4604. O-92MOD A1761
A1761 Abstract: 2SA1761 2SC4604 Text: 2SA1761 東芝トランジスタシリコンPNPエピタキシャル形 PCT方式 2SA1761 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。: VCE (sat) = −0.5 V (最大) (IC = −0.5 A)	Original	PDF	2SA1761 2SC4604 O-92MOD 20070701-JA A1761 2SA1761 2SC4604
A1761 Abstract: 2SA1761 2SC4604 Text: 2SA1761 東芝トランジスタシリコンPNPエピタキシャル形 PCT方式 2SA1761 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。: VCE (sat) = −0.5 V (最大) (IC = −0.5 A)	Original	PDF	2SA1761 2SC4604 O-92MOD A1761 2SA1761 2SC4604
A1761 Abstract: TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1761 2SC4604 Text: 2SA1761 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1761 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High-speed switching: tstg = 0.2 µs (typ.)	Original	PDF	2SA1761 2SC4604. A1761 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1761 2SC4604
Untitled Abstract: No abstract text available Text: 2SA1761 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1761 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High-speed switching: tstg = 0.2 µs (typ.)	Original	PDF	2SA1761 2SC4604.
c4604 Abstract: 2SC4604 2SA1761 Text: 2SC4604 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4604 Power Amplifier Application. Power Switching Applications. Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) • High-speed switching: tstg = 0.5 µs (typ.)	Original	PDF	2SC4604 2SA1761 c4604 2SC4604 2SA1761
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	PDF	SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Text: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	PDF	SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Untitled Abstract: No abstract text available Text: 2SC4604 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4604 Power Amplifier Application. Power Switching Applications. Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) • High-speed switching: tstg = 0.5 µs (typ.)	Original	PDF	2SC4604 2SA1761
2sC5200, 2SA1943 Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current	Original	PDF	BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
smd transistor h2a Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output	Original	PDF	BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	PDF	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

A1761 Abstract: 2SA1761 2SC4604 Text: TO SH IBA 2SA1761 2 S A 1 761 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • SILICON PNP EPITAXIAL TYPE Unit in mm 5.1 MAX Low Colleetor-Emitter Saturation Voltage : VCE sat “ —0.5V (Max.) (Ic = -1.5A ) High Speed Switching Time : ^ ^ = 0.2/^ (Typ.)	OCR Scan	PDF	2SA1761 2SC4604. O-92MOD A1761 2SA1761 2SC4604
2SA1761 Abstract: 2SC4604 A1761 Text: TO SH IBA 2SA1761 2 S A 1 761 TO SHIBA TRANSISTOR PO W ER A M PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE Unit in mm 5.1 MAX. PO W ER SWITCHING APPLICATIONS • • • Low Colleetor-Emitter Saturation Voltage : VGE sat = -0.5V (Max.) (IC = - 1.5A) High Speed Switching Time : tg tg ^ .2 /^ (Typ.)	OCR Scan	PDF	2SA1761 2SC4604. O-92MOD 2SA1761 2SC4604 A1761
2SA1301 TOSHIBA Abstract: b962 2SA1301 2SB1482 2SB1487 Toshiba 2SB754 2SA1467 2SB798 2SB897 2SA1213 Text: 74 - w. € tt Manuf. T y p e No. 2SB 1507 2SB 1508 2 SB 1509 2SB 1510 2SB 1511 = W H # H £ = n h # 2SB 1512 O — A 2 SB 1513 □ — A 2 SB 1514 □— 2SB 1515 □ — A 2 SB 1516 2 SB 2 SB . H ^ SANYO 2SBS27 1527 2SB 1528 2 SB 1529 2SB1439 2SB1433 2SA1761	OCR Scan	PDF	2sb827 2sb754 2sa1185 2sb828 2sb1154 2sb829 2sbi155 2sb1214 2sb1418 2sb904 2SA1301 TOSHIBA b962 2SA1301 2SB1482 2SB1487 Toshiba 2SB754 2SA1467 2SB798 2SB897 2SA1213
Untitled Abstract: No abstract text available Text: 2SC4604 SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER APPLICATION. Unit in mm 5.1 MAX POWER SWITCHING APPLICATIONS. . Low Collector-Emitter Saturation Voltage : VcE sat = 0.5V(max.) . High Speed Switching (Ic=1.5A) : tstg-0.5 u s (Typ.) 0 75 MAX 1.0 MAX . Complementary to 2SA1761	OCR Scan	PDF	2SC4604 2SA1761 100mA
Untitled Abstract: No abstract text available Text: TOSHIBA 2SA1761 T O S H IB A T R A N SISTO R SILICO N PNP E P ITA X IA L TYPE 2 S A 1 761 Unit in mm P O W E R A M P L IFIE R A PPLIC A TIO N S . 5.1 MAX P O W E R S W IT C H IN G A PPLIC A TIO N S . • Low Collector-Emitter Saturation Voltage : v CE sat = -0 .5 V (Max.) (Ic = -1.5 A )	OCR Scan	PDF	2SA1761 2SC4604. 75MAX 961001EAA2'
Untitled Abstract: No abstract text available Text: TOSHIBA 2SA1761 2 S A 1 761 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. SILICON PNP EPITAXIAL TYPE Unit in mm PO W ER SWITCHING APPLICATIONS. • • • 5.1 MAX Low Collector-Emitter Saturation Voltage : VCE sat “ —0.5V (Max.) (IC = —1.5A) High Speed Switching Time : tgtg = 0.2//s(Typ.)	OCR Scan	PDF	2SA1761 2SC4604. O-92MOD 961001EAA2'
A1761 Abstract: 2SA1761 2SC4604 Text: TOSHIBA 2SA1761 2 S A 1 761 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON PNP EPITAXIAL TYPE POWER SWITCHING APPLICATIONS. • Unit in mm 5.1 M A X Low Colleetor-Emitter Saturation Voltage • VCE sat “ —0.5V (Max.) (1^ = -1.5A) High Speed Switching Time : tgtg = 0.2y«s (Typ.)	OCR Scan	PDF	2SA1761 2SC4604. O-92MOD ----60V, -0i03 961001EAA2' A1761 2SA1761 2SC4604
15J102 Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346 Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811	OCR Scan	PDF	2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
2sC5200, 2SA1943, 2sc5198 Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102 Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428	OCR Scan	PDF	2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
2SC144 Abstract: 2SD466 2sc5266 Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l\|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *	OCR Scan	PDF	T258-OMI FAX06 2SC144 2SD466 2sc5266

Privacy Settings

2SA1761 Search Results

2SA1761 Price and Stock

Toshiba America Electronic Components 2SA1761,F(J

Toshiba America Electronic Components 2SA1761,T6F(M

Toshiba America Electronic Components 2SA1761,T6F(J

2SA1761 Datasheets (11)

2SA1761 Datasheets Context Search

A1761

A1761

A1761

A1761

A1761

A1761

Untitled

c4604

GT30F131

IGBT GT30F124

Untitled

2sC5200, 2SA1943

smd transistor h2a

GT30F124

A1761

2SA1761

2SA1301 TOSHIBA

Untitled

Untitled

Untitled

A1761

15J102

2sC5200, 2SA1943, 2sc5198

2SC144