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    2SA1312 Price and Stock

    Toshiba America Electronic Components 2SA1312GRTE85LF

    TRANS PNP 120V 0.1A SMINI
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    2SA1312GRTE85LF Reel 3,000
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    Toshiba America Electronic Components 2SA1312-BL(TE85L,F

    TRANS PNP 120V 0.1A SMINI
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    Toshiba America Electronic Components 2SA1312-BL(TE85LF)

    Trans GP BJT PNP 120V 0.1A 3-Pin S-Mini T/R - Tape and Reel (Alt: 2SA1312-BL(TE85L,F)
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    Avnet Americas 2SA1312-BL(TE85LF) Reel 20 Weeks 3,000
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    Others 2SA1312BL

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    ComSIT USA 2SA1312BL 30,000
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    2SA1312 Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1312 Toshiba General Purpose Transistors (Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Comments: Low-noise; Part Number: 2SC3324; DC Current Gain hFE, min: (min 200) (max 700); DC Current Gain hFE, max: (max -0.3); Collector-Emitter Saturation Voltage V_CE(sat), max (V): (max -120) Original PDF
    2SA1312 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1312 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1312 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1312 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1312 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1312 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1312 Toshiba Silicon PNP Epitaxial Type (PCT Process) Transistor Scan PDF
    2SA1312 Toshiba TRANSISTOR (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS) Scan PDF
    2SA1312 Toshiba PNP transistor Scan PDF
    2SA1312 Toshiba Super Mini Package (TO-236 / SOT-23) Transistors Scan PDF
    2SA1312BL Toshiba 2SA1312 - TRANSISTOR 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    2SA1312-BL Toshiba 2SA1312 - TRANSISTOR 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1312-BL Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1312BL Toshiba Silicon PNP Epitaxial Type Transistor Scan PDF
    2SA1312BLTE85L Toshiba 2SA1312 - TRANSISTOR 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal Original PDF
    2SA1312-BL(TE85L,F Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 120V 0.1A S-MINI Original PDF
    2SA1312-BL(TE85L,F) Toshiba 2SA1312 - Trans GP BJT PNP 120V 0.1A 3-Pin S-Mini T/R Original PDF
    2SA1312BLTE85R Toshiba 2SA1312 - TRANSISTOR 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal Original PDF
    2SA1312-GR Toshiba 2SA1312 - TRANSISTOR 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal Original PDF

    2SA1312 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SA1312 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1312 Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = −120 V • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) Unit: mm h= 0.95 (typ.) •


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    PDF 2SA1312 2SC3324

    2SA1312

    Abstract: 2SC3324
    Text: 2SA1312 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1312 Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = −120 V • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) Unit: mm h= 0.95 (typ.) •


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    PDF 2SA1312 2SC3324 2SA1312 2SC3324

    marking ABG

    Abstract: 2SA1312 ABG marking hFE CLASSIFICATION Marking IC01 Rating
    Text: Transistors SMD Type Silicon PNP Epitaxial Type 2SA1312 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 High voltage. 0.4 3 Features 1 Low noise. 0.55 High hFE. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter +0.1 0.38-0.1


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    PDF 2SA1312 OT-23 -120V -10mA marking ABG 2SA1312 ABG marking hFE CLASSIFICATION Marking IC01 Rating

    2SA1312

    Abstract: 2SC3324
    Text: 2SA1312 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1312 ○ 低周波増幅用 ○ 低周波低雑音用 単位: mm • 小型パッケージで小型機器の設計に適しています。 • 高耐圧です。 : VCEO = −120 V


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    PDF 2SA1312 2SC3324 O-236MOD SC-59 2SA1312 2SC3324

    2SA1312

    Abstract: 2SC3324
    Text: 2SA1312 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1312 Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = −120 V • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) Unit: mm h= 0.95 (typ.) •


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    PDF 2SA1312 2SC3324 2SA1312 2SC3324

    2SA1312

    Abstract: 2SC3324
    Text: 2SA1312 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1312 Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = −120 V · Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) Unit: mm h= 0.95 (typ.) · High hFE: hFE = 200~700


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    PDF 2SA1312 2SC3324 2SA1312 2SC3324

    2SC3324

    Abstract: 2SA1312
    Text: 2SC3324 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC3324 ○ 低周波増幅用 ○ 低周波低雑音用 単位: mm • 小型パッケージで小型機器の設計に適しています。 • 高耐圧です。 • 電流増幅率が高い。 : hFE = 200~700


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    PDF 2SC3324 2SA1312 O-236MOD SC-59 2SC3324 2SA1312

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


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    PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


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    PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


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    PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


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    PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    MARKING HRA

    Abstract: 2SA1312 2SC3324
    Text: 2SA1312 TOSHIBA 2 S A 1 312 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY LO W NOISE AM PLIFIER APPLICATIONS. • High Voltage : V çeq = —120V • Excellent hFE Linearity : hFE (IC = —0.1mA) / hFE (IC = - 2mA) = 0.95 (Typ.)


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    PDF 2SA1312 --120V 2SC3324 MARKING HRA 2SA1312 2SC3324

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE 2SA1312 U nit in mm A U D IO FREQUENCY L O W NOISE AM PLIFIER APPLICATIONS. • High Voltage : V q e o = -1 2 0 V • Excellent hjpj] Linearity : hpE Ic = - 0.1mA / hFE (Iq = - 2mA) = 0.95 (Typ.) • High hp>E : hpE = 200-700 . Low Noise : NF (2) = 0.2dB (Typ.), 3dB (Max.) at f= lk llz


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    PDF 2SA1312 2SC3324

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SA1312 2 S A 1 312 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY LO W NOISE AM PLIFIER APPLICATIONS. High Voltage : V q e O = —120V Excellent hpE Linearity hFE dC = - 0-lmA) / hFE (IC = - 2mA) = 0.95 (Typ.)


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    PDF 2SA1312 2SC3324

    SC-59 marking c5d

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1312 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS i <; a 1 w êêf m m • 31 1 m tr ■ AUDIO FREQUENCY LO W NOISE AM PLIFIER APPLICATIONS. Unit in mm • High Voltage : V q e q = —120V + 0.5 3.5-as • Excellent h pg Linearity


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    PDF 2SA1312 --120V 2SC3324 SC-59 marking c5d

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


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    PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1

    2SK 150A

    Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
    Text: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015


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    PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2SK 150A mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N

    2SC3340

    Abstract: 2SA1324 2SC3339 2SC3426
    Text: —3 10. SUPER MINI PACKAGE SERIES TO-236 MOD./SOT-23 MOD. C/i 1 H CD 3» rS M H n > TRANSISTOR << •c PC (V) (mA) (mW) 50 150 150 70 -700/400 6 V CE (V) >C (mA) (V) •c (mA) >B (mA) (MHz) 0.25/0.3 100 10 (80) NPN l General Purpose 2SC2712 ! High Voltage


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    PDF O-236 /SOT-23 2SA1162 15NEW) 2SC2532 2SC2714 2SC2715 2SC2716 2SC2996 2SC3340 2SA1324 2SC3339 2SC3426

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 2SA1245 167 *2SC1923 2SC2996 266 * 2N3905 2SA1255 170 *2SC1959 2SC3011 272


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    PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    SS2205

    Abstract: 2SA1628 2SB814 HSI 527 2SA1284 2SA1178 2SA1283 2SA1586 2SB1043 2SA934
    Text: 33 tt « Manuf. ft 3 SANYO M TOSHIBA m « T y p e No. o a ED - ±L HITACHI S ± FUJITSU 35 ta T DTA123YS 1505 n m w * 2SA 1506 m w m ,^ 2SA 1 507 , 2SA 1508 2SA 1509 2SA 1510 ' 2SA 1511 /• = ft 2SA 1512 & T 2SA 1 5 1 3 -■ a 2SA 1514 □ - A 2SA1257 2S A 1 1 6 3


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    PDF SS2205 UN411H RT1P234S DTA123YS 2SA1781 2SA1162 2SB736 2SB709A 2SA1235 2SA1753 SS2205 2SA1628 2SB814 HSI 527 2SA1284 2SA1178 2SA1283 2SA1586 2SB1043 2SA934

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


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    PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr