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    2N7002 SILICONIX Search Results

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    2N7000

    Abstract: BS170 MOSFET bs170 2N7002 vishay VQ1000J/P 2N7002 VQ1000J VQ1000P TO92S BS170-TA
    Text: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N7000 2N7002 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5


    Original     		PDF 2N7000/2N7002, VQ1000J/P, BS170 2N7002 2N7000 VQ1000P VQ1000J 08-Apr-05 2N7000 BS170 MOSFET bs170 2N7002 vishay VQ1000J/P 2N7002 VQ1000J VQ1000P TO92S BS170-TA

    2N7002 MARKING

    Abstract: markings 2n7002 2n7002 siliconix s4 vishay VQ1000J/P 2N7002 marking code 72 APPLICATION NOTES VQ1000J 2n7000 2N7002 vishay SILICONIX 2N7002
    Text: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N7000 2N7002 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5


    Original     		PDF 2N7000/2N7002, VQ1000J/P, BS170 2N7002 2N7000 VQ1000P VQ1000J 18-Jul-08 2N7002 MARKING markings 2n7002 2n7002 siliconix s4 vishay VQ1000J/P 2N7002 marking code 72 APPLICATION NOTES VQ1000J 2n7000 2N7002 vishay SILICONIX 2N7002

    code for 2n7002

    Abstract: 2N7002 marking code 72 VQ1000J 2N7002 2N7000 MOSFET VQ1000J/P 2n7000 BS170 VQ1000P SILICONIX 2N7002
    Text: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N7000 2N7002 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5


    Original     		PDF 2N7000/2N7002, VQ1000J/P, BS170 2N7002 2N7000 VQ1000P VQ1000J O-226AA, BS170 code for 2n7002 2N7002 marking code 72 VQ1000J 2N7002 2N7000 MOSFET VQ1000J/P 2n7000 VQ1000P SILICONIX 2N7002

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


    Original     		PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    BS170

    Abstract: VQ1000J 2N7000 2N7000 7002 2N7002 VQ1000P 7002 2n7002 BS170 siliconix
    Text: 2N7000/7002, VQ1000J/P, BS170 Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V


    Original     		PDF 2N7000/7002, VQ1000J/P, BS170 2N7000 2N7002 VQ1000P VQ1000J P-37993--Rev. BS170 VQ1000J 2N7000 2N7000 7002 2N7002 VQ1000P 7002 2n7002 BS170 siliconix

    2n7000 equivalent

    Abstract: VQ1000J 2n7000 2N7002 MARKING 2n7002 siliconix EQUIVALENT FOR bs170 equivalent of BS170 BS170 mosfet bs170 VQ1000J/P
    Text: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225


    Original     		PDF 2N7000/7002, VQ1000J/P, BS170 2N7000 2N7002 VQ1000P VQ1000J Capaci02, 2n7000 equivalent VQ1000J 2n7000 2N7002 MARKING 2n7002 siliconix EQUIVALENT FOR bs170 equivalent of BS170 BS170 mosfet bs170 VQ1000J/P

    equivalent of BS170

    Abstract: 2n7002 siliconix 2n7000 equivalent EQUIVALENT FOR bs170 MARKING bs170 2n7000 data sheet VQ1000J codes marking 2N7002 SILICONIX 2N7002 2N7002 MARKING
    Text: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P


    Original     		PDF 2N7000/7002, VQ1000J/P, BS170 2N7000 2N7002 VQ1000P VQ1000J Capacitan02, equivalent of BS170 2n7002 siliconix 2n7000 equivalent EQUIVALENT FOR bs170 MARKING bs170 2n7000 data sheet VQ1000J codes marking 2N7002 SILICONIX 2N7002 2N7002 MARKING

    s72 sot 23

    Abstract: transistor marking s72 2N7019 2N7002 MARKING s72 2N7002 S72 SOT-23 s72 SOT23 Transistor s72 sot23 2n7002 transistor s72 S72 Transistor
    Text: N & P CHANNEL MOSFETS ENHANCEMENT MODE N CHANNEL SOT-23 Cont. D-S Drain Voltage Current Type Marking V max A max BS870 S70 60 0.25 2N7002 S72 60 0.25 *: Pulse test width 80µs, 1% duty factor. Pwr. Dispn. TC=25˚C W max 0.31 0.31 Gate Thr. Volt. VGS=VDS ID=ImA


    Original     		PDF BS870 2N7002 OT-23 BS850 22N7002 BS170 s72 sot 23 transistor marking s72 2N7019 2N7002 MARKING s72 2N7002 S72 SOT-23 s72 SOT23 Transistor s72 sot23 transistor s72 S72 Transistor

    VQ1000J

    Abstract: 2n7000 VQ1000J/P VQ1000P 2N7002 BS170 TO-92-18R S-52429
    Text: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225


    Original     		PDF 2N7000/7002, VQ1000J/P, BS170 2N7000 2N7002 VQ1000P VQ1000J Capaci02, VQ1000J 2n7000 VQ1000J/P VQ1000P 2N7002 BS170 TO-92-18R S-52429

    resistor 220k

    Abstract: JMK325BJ106MN 552 diode SANYO 220uF 16V datasheet capacitor 270pF SILICONIX 2N7002 Si4814DY BSTR1 2n7002 siliconix resistor 100k ohm
    Text: 5V Input, Digitally Selectable 1V/1.2V Output at 6A 4.75V to 5.25V VIN C1 10uF 6V X5R 5 IN 2 COMP DH U1 MAX1954 C3 22pF 10 8 C4 0.1uF N1 1/2 Si4814DY 9 L1 1.5uH DO3316P -152HC 1V@6A VOUT LX DL N3 2N7002 ENABLE 1 HSD BST R1 220k C2 270pF C5 22uF 6V X5R 2x


    Original     		PDF MAX1954 Si4814DY DO3316P -152HC 2N7002 270pF 220uF 20MHz resistor 220k JMK325BJ106MN 552 diode SANYO 220uF 16V datasheet capacitor 270pF SILICONIX 2N7002 BSTR1 2n7002 siliconix resistor 100k ohm

    VN45350T

    Abstract: VN0603T 2N7001 VN45350 vn4012B
    Text: H Siliconix incorporated N-CHANNEL V BR DS PART# (V) DS(ON) VGS(th) tON Ciss (V) (ns) (PF) ID (mA) PD (H) 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 30 30 10 10 10 10 10 10 38 38 35 35 16 16 35 35 0.85 0.85 0.46 0.46 0.23 0.23 0.40 0.40 2 2 2 2 2 2 2 2 3.0 3.0 2.5 2.5


    Original     		PDF 14-PIN VQ1001J VQ1001P VQ1004P VQ1004J VQ1000J VQ1000P VQ1006P VQ1006J OT-23 VN45350T VN0603T 2N7001 VN45350 vn4012B

    capacitor 2200 mf

    Abstract: Dale Resistor EKE00DD410C00 capacitor 1000 MF CRCW08053002FRT1 dale resistor code DIFS4 2N7002 Si9143DB 2200mf
    Text: Si9143DB Vishay Siliconix Si9143 High-Performance Processor Controller Demo Board FEATURES D D D D D Voltage Mode Control Synchronous Buck Converter Short Circuit Current Limiting Over-Voltage Protection Output Current to 15 A D D D D Power Good Signal +5 V or +12 V Input


    Original     		PDF Si9143DB Si9143 CRCW08052492FRT1 CRCW08054992FRT1 CRCW08051003FRT1 CRCW08052872FRT1 CRCW08051692FRT1 CRCW08055001FRT1 CRCW080549R9FRT1 capacitor 2200 mf Dale Resistor EKE00DD410C00 capacitor 1000 MF CRCW08053002FRT1 dale resistor code DIFS4 2N7002 2200mf

    LTC4100GN

    Abstract: DC512 LTC4100EGN LED LN1251C LTC4100 tp10 d7 MBRM140T3 Si4431ADY Si4925DY 892NAS-100M
    Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT DC512 SMART BATTERY CHARGER BOARD LTC4100 DESCRIPTION Demonstration circuit DC512 is a single battery switching buck charge controller featuring the LTC4100. The recommended input power is 15 to 20V at 3.5Amps. A


    Original     		PDF DC512 LTC4100 DC512 LTC4100. TP1-TP10 TP12-TP14 1/16W LTC4100GN LTC4100EGN LED LN1251C LTC4100 tp10 d7 MBRM140T3 Si4431ADY Si4925DY 892NAS-100M

    2n7002 siliconix

    Abstract: MRF MOSFET 2N7002 Si3443DV X40435 SI3443 SILICONIX 2N7002
    Text: Application Note AN 182 Using a Multiple Voltage Supervisor for Over and Under Voltage Power Supply Shutdown and Fault Monitoring Author: Carlos Martinez INTRODUCTION Reliable system operation is often dependent on the quality of the power supplied. Supply voltages that are


    Original     		PDF X40435 2N7002 X40435 Si3443DV 2n7002 siliconix MRF MOSFET 2N7002 SI3443 SILICONIX 2N7002

    High-Side Gate-Drive

    Abstract: 1N4148 2N7000 2N7002 AN802 AN90 Si9940 Si9955DY Si9956DY Si9959DY
    Text: AN802 Siliconix LowĆVoltage Motor Drive Designs Using NĆChannel Dual MOSFETs in SurfaceĆMount Packages Jim Harnden Two basic MOSFET configurations are used in lowĆvoltage motor drivesĊthe nĆchannel halfĆbridge and the pĆ and nĆchannel complementary


    Original     		PDF AN802 AN904. Si9910 High-Side Gate-Drive 1N4148 2N7000 2N7002 AN802 AN90 Si9940 Si9955DY Si9956DY Si9959DY

    70592

    Abstract: SI9940 Si9959DY 2N7000 MOSFET PIN DETAILS AN90 vishay 2N7000 AN802 Si9955DY Si9956DY SILICONIX 2N7002
    Text: AN802 Vishay Siliconix Low-Voltage Motor Drive Designs Using N-Channel Dual MOSFETs in Surface-Mount Packages Two basic MOSFET configurations are used in low-voltage motor drives—the n-channel half-bridge and the p- and n-channel complementary half-bridge. The main advantage


    Original     		PDF AN802 AN90-4. Si9910 30-Nov-92 70592 SI9940 Si9959DY 2N7000 MOSFET PIN DETAILS AN90 vishay 2N7000 AN802 Si9955DY Si9956DY SILICONIX 2N7002

    BLM31PG330SN1L

    Abstract: VTM 48 DIODE 1N4001 SMT 1N4001 1N4148 2N7002 BAS16 BC817-25 MMSZ5254BT1 Si2328DS
    Text: Application Note AN:003 Powering Multiple VTMs with a Single PRM By Doug Ping Principal Field Application Engineer, West Coast Introduction Contents Page Introduction 1 Theory of Operation 2 Conclusion 3 This Application Note discusses the design practices for using Vicor’s V•I Chip Pre-Regulator


    Original     		PDF BAS16 MMSZ5254BT1 BLM31PG330SN1L SLC7530D-101ML 2N7002 Si2328DS BC817-25 BLM31PG330SN1L VTM 48 DIODE 1N4001 SMT 1N4001 1N4148 2N7002 BAS16 BC817-25 MMSZ5254BT1

    NTC R29

    Abstract: AMP-787441-1 AMP-74 NCP21XV103J03RA 35CV10AX 2N7002-SOT23 8.4v battery charger taiyo yuden date code 919AS-220M ntc 10k 10% D5
    Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 495 2 CELL LI-ION BATTERY CHARGER WITH CHARGE TERMINATION LTC4006 DESCRIPTION Demonstration circuit 495 is a single battery stand-alone battery charge controller with built in charge termination featuring the LTC 4006. The input voltage is 9 to 20V. The


    Original     		PDF LTC4006 b3C105KAT EMK107BJ104MA TAJB106M016 0603ZC472MAT MBRM140T3 MMSZ5248BS-7 LN1451C- LN1351C- 2802S-03-G1 NTC R29 AMP-787441-1 AMP-74 NCP21XV103J03RA 35CV10AX 2N7002-SOT23 8.4v battery charger taiyo yuden date code 919AS-220M ntc 10k 10% D5

    SLC7530D-101ML

    Abstract: FPA101 BLM31PG330SN1L VTM 48 1N4001 1N4148 2N7002 BAS16 BC817-25 MMSZ5254BT1
    Text: Application Note AN:003 Powering Multiple VTMs with a Single PRM By Doug Ping Principal Field Application Engineer, West Coast Introduction Contents Page Introduction 1 Theory of Operation 2 Conclusion 3 This Application Note discusses the design practices for using V•I Chip PRM Regulators and VTM


    Original     		PDF BAS16 MMSZ5254BT1 BLM31PG330SN1L SLC7530D-101ML 2N7002 Si2328DS BC817-25 SLC7530D-101ML FPA101 BLM31PG330SN1L VTM 48 1N4001 1N4148 2N7002 BAS16 BC817-25 MMSZ5254BT1

    2N7010

    Abstract: diode 2U 14 PWS726 diode 2U PWS740-2 PWS750-4U 2N7008 PWS750-2U PWS740 2u 45 diode
    Text: PWS750 Isolated, Unregulated DC/DC CONVERTER COMPONENTS FEATURES APPLICATIONS ● 100% TESTED FOR HIGH-VOLTAGE BREAKDOWN ● COMPACT-SURFACE MOUNT ● MULTICHANNEL OPERATION ● INDUSTRIAL PROCESS CONTROL EQUIPMENT ● GROUND-LOOP ELIMINATION ● PC-BASED DATA ACQUISITION


    Original     		PDF PWS750 PWS740/PWS745 PWS750-2U PWS750-4U PWS750 ISO120 PWS740-3 PWS750-3 2N7010 diode 2U 14 PWS726 diode 2U PWS740-2 2N7008 PWS740 2u 45 diode

    2N7002 marking code 72

    Abstract: 2H7000 2N7002 marking code 72 J TVP8 Marking Code 72 2N7002 marking code vishay
    Text: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V (B R )D S S M i n (V ) rDS(on) Max (Q) V G S (th ) (V) b (A) 2N7000 5 @ V GS = 1 0V 0.8 to 3 0.2 2N7002 7,5 @ V QS= 10 V 1 to 2.5 0.115 5.5 @ V q 3 = 10 V


    OCR Scan     		PDF 2N7000/2N7002, VQ1000J/P, BS170 2N7000 2N7002 VQ1000J VQ1000P BS170 S-04279-- 16-Jul-01 2N7002 marking code 72 2H7000 2N7002 marking code 72 J TVP8 Marking Code 72 2N7002 marking code vishay

    m2n7000

    Abstract: 1000J sot23 BS170
    Text: Tem ic 2N7000/7002, VQIOOOJ/P, BS170_ slUconix N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V B R D S S Min (V) * * D S (o n ) Max (Q) I d (A) Vr.s(ih) (V) 2N7000 5 @ V gs = 10V 0.8 to 3 0.2 2N7002 7.5 @ V gs = 10 V 1 to 2.5


    OCR Scan     		PDF 2N7000/7002, BS170_ 2N7000 2N7002 VQ1000J VQ1000P BS170 P-37993-- VQ1000J/P, m2n7000 1000J sot23 BS170

    MOSFET S170

    Abstract: s170 mosfet s170 S-52429 1000J s170 to92
    Text: 2N7000/7002, VQIOOOJ/P, BS170 S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number *t>S on M a x (Q ) V G S (th )(V ) 2N7000 5 @ V q s = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VG S = 10 V 1 to 2.5 0.115 V(BR)DSS M i n (V )


    OCR Scan     		PDF 2N7000/7002, BS170 2N7000 2N7002 BS170 S-52429-- 28-Apr-97 VQ1000J/P, MOSFET S170 s170 mosfet s170 S-52429 1000J s170 to92