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    2N6802 Price and Stock

    Microchip Technology Inc 2N6802

    MOSFET N-CH 500V 2.5A TO39
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    Microchip Technology Inc 2N6802U

    MOSFET N-CH 500V 2.5A 18ULCC
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    Microchip Technology Inc JAN2N6802

    MOSFET N-CH 500V 2.5A TO39
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    Microchip Technology Inc JANTX2N6802

    MOSFET N-CH 500V 2.5A TO205AF
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    Microchip Technology Inc JANTXV2N6802

    MOSFET N-CH 500V 2.5A TO205AF
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    2N6802 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6802 Defense Supply Center Columbus N-Channel FET Original PDF
    2N6802 International Rectifier HEXFET TRANSISTORS Original PDF
    2N6802 Microsemi N Channel MOSFET; Original PDF
    2N6802 Microsemi FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V TO-205AF TO-39 Original PDF
    2N6802 Omnirel 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor Original PDF
    2N6802 Semelab N-Channel Enhancement Mode Power MOSFET Original PDF
    2N6802 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    2N6802 International Rectifier TO-39 Package N-Channel HEXFET Scan PDF
    2N6802 International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF
    2N6802 Motorola European Master Selection Guide 1986 Scan PDF
    2N6802 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N6802 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6802 Unknown FET Data Book Scan PDF
    2N6802 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6802 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6802 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6802 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6802 Semelab MOS Power N-Channel Enhancement Mode Scan PDF
    2N6802 Semelab MOS Transistors Scan PDF
    2N6802 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF

    2N6802 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JANTX2N6796

    Abstract: 2N6798 transistor c 557 2N6800 2N6802 JANTX2N6798 JANTX2N6800 JANTX2N6802 JANTXV2N6796 JANTXV2N6798
    Text: 2N6796, JANTX2N6796 JANTXV2N6796 2N6798, JANTX2N6798 JANTXV2N6798 2N6800, JANTX2N6800, JANTXV2N6800 2N6802, 2N6802, 2N6802 JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE, QUALIFIED TO MIL-PRF-19500/557 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor


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    PDF 2N6796, JANTX2N6796 JANTXV2N6796 2N6798, JANTX2N6798 JANTXV2N6798 2N6800, JANTX2N6800, JANTXV2N6800 2N6802, 2N6798 transistor c 557 2N6800 2N6802 JANTX2N6800 JANTX2N6802 JANTXV2N6796 JANTXV2N6798

    Untitled

    Abstract: No abstract text available
    Text: 2N6796U, 2N6798U, 2N6800U, 2N6802U Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798U part number is also qualified to the JANS level. These


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    PDF 2N6796U, 2N6798U, 2N6800U, 2N6802U MIL-PRF-19500/557 2N6798U O-205AF T4-LDS-0047-1,

    2N6802

    Abstract: IRFF430
    Text: 2N6802 IRFF430 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE POWER MOSFET 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. BVDSS ID(cont) RDS(on) 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)


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    PDF 2N6802 IRFF430 O-205AF) 2N6802 IRFF430

    2N6880

    Abstract: 2N6798 JANTXV
    Text: 2N6796, 2N6798, 2N6800, 2N6802 Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798 part number is also qualified to the JANS level. These


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    PDF 2N6796, 2N6798, 2N6800, 2N6802 MIL-PRF-19500/557 2N6798 T4-LDS-0047, 2N6880 2N6798 JANTXV

    MOSFET

    Abstract: 2N6802
    Text: t^ejm.l-donJ.uatot. tPioduati, Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N6802 IRFF430 MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL ENHANCEMENT MODE POWER MOSFET BV DSS D(cont)


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    PDF 2N6802 IRFF430 00A/US 300us, MOSFET 2N6802

    Untitled

    Abstract: No abstract text available
    Text: 2N6802 IRFF430 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE POWER MOSFET 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. BVDSS ID(cont) RDS(on) 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)


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    PDF 2N6802 IRFF430 O-205AF)

    Untitled

    Abstract: No abstract text available
    Text: 2N6802 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.


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    PDF 2N6802 O205AF) 11-Oct-02

    2N6802

    Abstract: 2N6802U
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6802 2N6802U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)


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    PDF MIL-PRF-19500/557 2N6802 2N6802U T4-LDS-0149 2N6802 2N6802U

    DD 127 D TRANSISTOR

    Abstract: transistor DD 127 D 2N6880 2N6798 2N6796 2n6796 jantx 2N6796 JANTXV 2N6802 2n6800 2N6798 JANTXV
    Text: 2N6796, 2N6798, 2N6800, 2N6802 Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798 part number is also qualified to the JANS level. These


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    PDF 2N6796, 2N6798, 2N6800, 2N6802 MIL-PRF-19500/557 2N6798 2N67n T4-LDS-0047, DD 127 D TRANSISTOR transistor DD 127 D 2N6880 2N6796 2n6796 jantx 2N6796 JANTXV 2N6802 2n6800 2N6798 JANTXV

    DD 127 D transistor

    Abstract: 2n6798u 2N6796U
    Text: 2N6796U, 2N6798U, 2N6800U, 2N6802U Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798U part number is also qualified to the JANS level. These


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    PDF 2N6796U, 2N6798U, 2N6800U, 2N6802U MIL-PRF-19500/557 2N6798U O-205AF 2N6796, 2N67mensions T4-LDS-0047-1, DD 127 D transistor 2N6796U

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6802 2N6802U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)


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    PDF MIL-PRF-19500/557 2N6802 2N6802U T4-LDS-0149

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


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    PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065

    1RF9130

    Abstract: jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120
    Text: Government/ Space Products bitematinnai ¡¡¡F te S ? H E X F E T , Mil-Qualified N-Channel Types JEDEC 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6796 2N6798 2N6800 2N6802 Part Numbers JANTX JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 JANTX2N6790


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    PDF JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 JANTX2N6790 JANTX2N6792 JANTX2N6794 JANTX2N6796 JANTX2N6798 JANTX2N6800 1RF9130 jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120

    2N6802

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F 12E 0 | b3b?25M GQöbbbö 0 | 2N6802 CASE 79-05, STYLE 6 TO-39 TO-205AF MAXIMUM RATINGS Symbol Value U nit Drain-Source Voltage Rating Voss 500 Vdc Drain-Gate Voltage (Rq s * 1 . 0 m il) Vd g r 500 Vdc Vg S Drain Current Continuous


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    PDF 2N6802 O-205AF) 2N6802

    1N7001

    Abstract: 2N6155 4900 SIEMENS 1N7000 BUZ54 2N6759 2n6800 2N6823 BUZ211 IXTP4N90
    Text: - 248 - f M € tt € ft * V 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 IR IR IR IR


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    PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6659 O-205AF 1N7001 2N6155 4900 SIEMENS 1N7000 BUZ54 2N6759 2n6800 2N6823 BUZ211 IXTP4N90

    2N6901

    Abstract: mosfet 2n6788 2N6802 metal detector WITH IC 555 550D 2N6756 LH0063 QPL-19500
    Text: Standard Power MOSFETs 2N6802 File Number 1905 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 3.5A, 500V r D S o n —"1.50 N-CHANNEL ENHANCEMENT MODE o Features: • m ■ ■ ■ SOA is power-dissipation limited


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    PDF 2N6802 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF MIL-S-19500/ 2N6901 mosfet 2n6788 metal detector WITH IC 555 550D 2N6756 LH0063 QPL-19500

    2N7003

    Abstract: 2N7009 2N7011 2N7073 G50-12C1 2N6755 2N6756 2N6757 2N6758 2N6759
    Text: - 248 M - € 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 f- +• */!/ * tt € f f t * £ ÍS T a = 2 5 '0


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    PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 O-254AA 2N7003 2N7009 2N7011 2N7073 G50-12C1 2N6759

    2N6802

    Abstract: transistor 6802
    Text: 23 2N6802 H A R R IS N -Channel Enhancem ent-M ode Power MOS Field-E ffect Transistor August 1991 Package Features T 0 -2 0 5 A F • 3.5A, 500V B O T T O M V IEW • rDS on = 1-50 • S O A is Pow er-Dissipation Limited • Nanosecond Switching Spe eds • Linear Transfer Characteristics


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    PDF 2N6802 2N6802 LHD063 AMPLITUDE-10V. transistor 6802

    2N6801

    Abstract: No abstract text available
    Text: POWER MOSFET TRANSISTORS 500 Volt, 1.5 Ohm N-Channel 2N6801 JTX, JTXV 2N6802 DESCRIPTION The U nitrode power MOSFET design utilizes the m ost advanced technology available. This e fficie n t design achieves a very low R d s i o o i and a high transconductance.


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    PDF 2N6801 2N6802 2N6801

    Untitled

    Abstract: No abstract text available
    Text: • 4305E71 0□ S3 7 Tti hi? m HAS g HARRIS 2N6802 N-Channel Enhancem ent-M ode Power M OS Field-Effect Transistor August 19 9 1 Features Package TQ-205AF m 0 *1.0 EA K fU W l * A , OUUV B O TTO M VIEW * rDS(on = 1 -s r i • SO A is Po w e r-D issip a tio n Lim ited


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    PDF 4305E71 2N6802 TQ-205AF LH0063

    TO-254

    Abstract: T0-204 IRF450 equivalent
    Text: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS


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    PDF 2N6756 2N6758 2N6760 2N6762 2N6764 2N6766 2N6768 2N6770 2N6788 2N6790 TO-254 T0-204 IRF450 equivalent

    2n6152

    Abstract: 1N7000 2N61B 2N676 2N6757 1N7001 2N5184 2N6164 2n6800 IXTP4N90
    Text: - 248 M - € tt f ft t Vd s or € i * £ Vg s ÍS Ta=25'0 * /CH Vd g as. 1GSS Pd Id V g s th 1DSS max * /CH ft % 4# fe (13=2 5 * 0 Id (on) Vd s = Vg s Ciss Coss Crss ft & m n V g s =0 (*typ) (max) (pF) (max) *typ (0) *typ (A) Id (A) Vg s (V) *typ (S) Id


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    PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6791 O-205AF 2N6792 2n6152 1N7000 2N61B 2N676 1N7001 2N5184 2N6164 2n6800 IXTP4N90

    2N6788 motorola

    Abstract: vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111
    Text: FIELD-EFFECT TRANSISTORS continued Small-Signal TMOS TMOS Power MOSFETs Pow er M O SFETS, M o to ro la tra d e m a rk T M O S , a re FET transistors with an oxide insulated gate which controls vertical c u rren t flow. This basic description fits a n um ber of structures and process titles


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    PDF IRFF431 IRFF432 IRFF433 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6788 motorola vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111

    2N7003

    Abstract: 2N7011 2N7009 1N7003 2N7073 2N700I 2N6798 2N6799 2N6801 2N6802
    Text: - 316 - m £ *± f * V Vd s or £ A * Vd g 11/ V £ (V) m (Ta=25°C> Vg s b Ig s s Pd * /CH * /CH (A) m (nA) V g s th) loss Vg s (V) Vd s (V) (HA) min max (V) (V) m ft Id OnA) & 14 CTa=25tl) I d (on) I Ds(on) Vd s = Vss Ciss g fs Coss Crss V g s “0 (max)


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    PDF 2N8797 T0-205AF 2N6798 O-205AF 2N6799 O-254AA 2N7077 2N7003 2N7011 2N7009 1N7003 2N7073 2N700I 2N6801 2N6802