BC238 h parameter
Abstract: 2n6515 REPLACEMENT BC237 2N6515 equivalent transistor bc547 BC109c transistor BC161 transistor BF245 motorola 2N2270 2n6517 sot
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN 2N6515 2N6517 PNP 2N6519 2N6520 COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER MAXIMUM RATINGS Symbol 2N6515 2N6519 2N6517 2N6520 Unit Collector – Emitter Voltage VCEO
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2N6515
2N6517
2N6519
2N6520
2N6515,
2N6516,
2N6519,
2N6520
BC238 h parameter
2n6515 REPLACEMENT
BC237
2N6515 equivalent
transistor bc547
BC109c transistor
BC161 transistor
BF245 motorola
2N2270
2n6517 sot
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2N6520 MOTOROLA
Abstract: 2N6520 DIODES 2N6515 2N6516 2N6517 2N6519 2N6520
Text: MOTOROLA Order this document by 2N6515/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN 2N6515 2N6517 PNP 2N6519 2N6520 COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER MAXIMUM RATINGS Symbol 2N6515 2N6519 2N6517 2N6520 Unit Collector – Emitter Voltage
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2N6515/D
2N6515
2N6517
2N6519
2N6520
2N6515,
2N6520 MOTOROLA
2N6520 DIODES
2N6515
2N6516
2N6517
2N6519
2N6520
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2N6520 MOTOROLA
Abstract: 2N6516 2N6517 2N6520 DIODES 2N6515 2N6519 2N6520
Text: MOTOROLA Order this document by 2N6515/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN 2N6515 COLLECTOR 3 COLLECTOR 3 thru 2N6517* PNP 2N6519 2 BASE 2 BASE NPN 2N6520* PNP 1 EMITTER 1 EMITTER Voltage and current are negative for PNP transistors
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2N6515/D
2N6515
2N6517*
2N6519
2N6520*
2N6516
2N6515,
2N6516,
2N6520 MOTOROLA
2N6516
2N6517
2N6520 DIODES
2N6515
2N6519
2N6520
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2N6805
Abstract: 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525
Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 Rohm Co Ltd Rohm Corp Rohm Corp Rohm Co Ltd Sanyo Elect Semelab Semelab Semelab Semelab Semelab ~MLt;9t;U1 ~melaD SML3501 SML3505 SML3509 SML3513 2N3205 2N3208 SOT3552 SOT3552 SOT3552 Semelab
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2S81188
2S8891
2S8632K
SML3552
SML3575
SML3578
SML69501
SML69509
2N6805
2N6456
2N6803
20C36
2NJ771
RCA 2n6674
20C84
2N6617
2NJ771A
2N6525
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r
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MMBFJ175LT1
236AB)
Ga218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2N643
BC237
MARKING DP SOT-363
DO204AA
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BC237
Abstract: MMBD2005T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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BC237
Abstract: MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3441XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10
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MMBFJ177LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
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BC237
Abstract: MPSA06 346
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
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MMBD1000LT1
MMBD2000T1
MMBD3000T1
MMSD1000T1
MMBD1000LT1
OT-23
O-236AB)
V218A
MSC1621T1
MSC2404
BC237
MPSA06 346
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BC237
Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3455XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
K 2056 transistor
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2N16
Abstract: BC237 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF1P02ELT1
L218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2N16
BC237
BCY72
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2n2222 h 331 transistors
Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3442XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2n2222 h 331 transistors
2n2222 -331 transistors
2n2222 331 transistors
BC237
2n2222 h 331
MARKING CODE diode sod123 W1
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MMBF4856
Abstract: transistor equivalent 2n5551 BF245 application note MSC2404 MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MDC3105LT1 Motorola Preferred Device Integrated Relay/Solenoid Driver • Optimized to Switch 3 V to 5 V Relays from a 5 V Rail • Compatible with “TX’’ and “TQ’’ Series Telecom Relays Rated up to
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Automat218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
MMBF4856
transistor equivalent 2n5551
BF245 application note
MSC1621
74LS04 Fan Out
2n3819 equivalent transistor
MMBF5486L
bf245 equivalent
MPS8093
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2N6516
Abstract: 2n6520 2n6517 2N6515
Text: MAXIMUM RATINGS Rating 2N6516 2N6515 2N6519 Symbol Collector-Emitter Voltage VCEO Collector-Base Voltage CCBO Emitter-Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520 v EBO NPN 2N6517 2N6520 U nit 250 300 350 Vdc 250 300 350 Vdc 2N6515 thru 2N6517^ Vdc PNP
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2N6515,
2N6516,
2N6517
2N6519,
2N6520
2N6516
2N6515
2N6519
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Untitled
Abstract: No abstract text available
Text: MAXIMUM RATINGS NPN Symbol 2N6515 2N6516 2N6519 2N6517 2N6520 C o llector-E m itter Voltage Vc e O 250 300 350 Vdc Collector-Base Voltage CcBO 250 300 350 Vdc Em itter-Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520 v EBO Rating U n it 2N6515 thru 2N6517*
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2N6515,
2N6516,
2N6517
2N6519,
2N6520
2N6515
2N6516
2N6519
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2n6520
Abstract: 2N6517 2N6515 2N6517 MOTOROLA 2N6519 transistors aio 20
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN NPN 2N 6515 2N6517 PNP 2N 6519 2N652Ö PNP EMITTER EMITTER MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage 2N6515 2N6517 2N6520 2N6519 v CEO 250 300 350 Vdc Collector-Base Voltage VCBO
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2N6517
2N652Ö
2N6515
2N6519
2N6520
2N6515,
2N6516,
2N6519,
2N6517 MOTOROLA
transistors aio 20
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2N661
Abstract: 2n6617
Text: MAXIMUM RATINGS 2N6516 Rating NPN 2N6517 Symbol 2N6515 2N6519 2N6520 U n it C o lle ctor-E m itte r V olta g e VCEO 250 300 350 V dc C o lle cto r-B ase V olta g e CCBO 250 300 350 Vdc Em itte r-B a se V olta g e 2N6515, 2N6516. 2N6517 2N6519, 2N6520 Veb o
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2N6516
2N6517
2N6515,
2N6516.
2N6519,
2N6520
2N6515
2N6519
2N6520
2N661
2n6617
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2n6520
Abstract: 2N6517 bc250 2n6519
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN NPN 2N 6515 2N 6517 PNP 2N 6519 2N 6520 PNP EMITTER EMITTER MAXIMUM RATINGS Rating Symbol 2N6515 2N6519 2N6517 2N6520 C oilector-E m itter Voltage v CEO 250 300 350 Vdc C ollector-B ase Voltage
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2N6515,
2N6516,
2N6517
2N6519,
2N6520
2N6515
2N6519
2N6520
1/2MSD7000
bc250
2n6519
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC Í X S T R S / R FJ 6 3 6 7 2 54 M OT O R O L A M a x im u m SC Tb XSTRS/R D eT| b3t,7aSM DDflaDS3 960 82 053 F T-29’G. r a t in g s Sym bol Value Unit Collector-Emitter Voltage VCEO 350 Vdc Collector-Base Voltage Vc b o 350 Vdc Vdc Rating
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MMBT6517
OT-23
O-236AA/AB)
2N6517
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Untitled
Abstract: No abstract text available
Text: M A XIM U M RATINGS Symbol Value U nit Collector-Emitter Voltage VCEO 350 Vdc Collector-Base Voltage VCBO 350 Vdc 5.0 Vdc Rating Emitter'Base Voltage vebo Base Current IB 250 mA Collector Current — Continuous ic 500 mA Symbol Max Unit PD 225 mW 1.8 mwrc
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MMBT6517LT1*
OT-23
O-236AB)
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MPS2307
Abstract: differential amplifier 2n5551 2N6520 MOTOROLA BF845 BF844 BF493 MPS A92 transistor 2N6515 2N6516 2N6517
Text: SMALL-SIGNAL TRANSISTORS — PLASTIC continued High Voltage Amplifier Transistors (TO-92 • EBC)* These high-voltage transistors are designed for driving neon bulbs and Nixie@ indicator tubes, for direct line operation, and for other applications requiring high-voltage capability at relatively low collector current. These devices are listed in
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BF844
MPSA44
BF845
MPSA45
2N6517
BF393
BCX53
BCX78
BCX59
BCX79
MPS2307
differential amplifier 2n5551
2N6520 MOTOROLA
BF493
MPS A92 transistor
2N6515
2N6516
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IC350
Abstract: marking iss ISS MARKING
Text: M A X IM U M RATINGS Symbol Value Unit Collector-Emitter Voltage Rating VCEO 350 Vdc Collector-Base Voltage v CBO 350 Vdc Emitter-Base Voltage v EBO 5.0 Vdc Base Current IB 250 mA Collector Current — Continuous ic 500 mA Symbol M ax Unit Pd 225 mW 1.8 mWX
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MMBT6517LT1*
OT-23
O-236AB)
MMBT6517LT1
IC350
marking iss
ISS MARKING
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25CC
Abstract: 2N5086 2N5401 MMBT5086 MMBT5087 MMBT5088 MMBT5089 MMBT5401 MPSA18 MMBT6517
Text: DF|t.3b7ES4 0DÔED47 3 | ~ M O T O R O L A SC Í X S T R S / R FD- r 6367254 MOTOROLA SC XSTRS/R > M A X IM U M RATINGS 96D F * Rating Value v CEO 50 Vdc Collector-Base Voltage VcBO 50 Vdc Emitter-Base Voltage Veb O 3.0 Vdc ic 50 mAdc Symbol Max Unit Pd
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