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Microchip Technology Inc JANTX2N6052 TRANS PNP DARL 100V 12A TO204AA
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DigiKey	JANTX2N6052	Bulk	15		1	1 $76.77 10 $76.77 100 $76.77 1000 $76.77 10000 $76.77	Buy Now
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Microchip Technology Inc	JANTX2N6052			36 Weeks		1 $76.77 10 $76.77 100 $76.77 1000 $76.77 10000 $76.77	Buy Now
NAC	JANTX2N6052	Tray			4	1 $78.33 10 $78.33 100 $72.14 1000 $66.87 10000 $66.87	Buy Now

Avnet Silica	JANTX2N6052			38 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
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Master Electronics	JANTX2N6052					1 - 10 - 100 $70.21 1000 $70.21 10000 $70.21	Buy Now
Microchip Technology Inc 2N6052 PNP POWER TRANSISTOR SILICON AMP
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DigiKey	2N6052	Bulk			100	1 - 10 - 100 $47.0402 1000 $47.0402 10000 $47.0402	Buy Now
Avnet Americas	2N6052	Bulk		36 Weeks	100	1 $49.6468 10 $49.6468 100 $49.6468 1000 $49.6468 10000 $49.6468	Buy Now
Mouser Electronics	2N6052					1 $50.66 10 $50.66 100 $50.66 1000 $50.66 10000 $50.66	Get Quote
Newark	2N6052	Bulk			100	1 - 10 - 100 $47.04 1000 $45.22 10000 $45.22	Buy Now
Microchip Technology Inc	2N6052			36 Weeks		1 $50.66 10 $50.66 100 $50.66 1000 $50.66 10000 $50.66	Buy Now

Onlinecomponents.com	2N6052					1 - 10 - 100 $44.91 1000 $44.91 10000 $44.91	Buy Now
NAC	2N6052	Tray			6	1 $51.69 10 $51.69 100 $47.61 1000 $44.12 10000 $44.12	Buy Now
EBV Elektronik	2N6052			37 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	2N6052					1 - 10 - 100 $44.91 1000 $44.91 10000 $44.91	Buy Now
onsemi 2N6052 TRANS PNP DARL 100V 12A TO204
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DigiKey	2N6052	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
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onsemi 2N6052G TRANS PNP DARL 100V 12A TO204
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Bristol Electronics	2N6052G		17		1	1 $9.75 10 $7.3125 100 $6.5813 1000 $6.5813 10000 $6.5813	Buy Now
Quest Components	2N6052G		13			1 $13 10 $9.75 100 $9.75 1000 $9.75 10000 $9.75	Buy Now
Microchip Technology Inc JAN2N6052 TRANS PNP DARL 100V 12A TO3
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DigiKey	JAN2N6052	Bulk			100	1 - 10 - 100 $47.5102 1000 $47.5102 10000 $47.5102	Buy Now
Avnet Americas	JAN2N6052	Bulk		36 Weeks	100	1 $50.1466 10 $50.1466 100 $44.23575 1000 $46.23071 10000 $46.23071	Buy Now
Newark	JAN2N6052	Bulk			100	1 - 10 - 100 $47.51 1000 $45.69 10000 $45.69	Buy Now
Microchip Technology Inc	JAN2N6052			36 Weeks		1 $51.17 10 $51.17 100 $51.17 1000 $51.17 10000 $51.17	Buy Now
NAC	JAN2N6052	Tray			6	1 $52.21 10 $52.21 100 $48.09 1000 $44.57 10000 $44.57	Buy Now

Master Electronics	JAN2N6052					1 - 10 - 100 $45.37 1000 $45.37 10000 $45.37	Buy Now

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2N6052 Datasheets (57)

Part	Manufacturer	Description	Datasheet Type	PDF
2N6052	Central Semiconductor	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS DARL PNP 100V 12A TO-3	Original	PDF
2N6052	Comset Semiconductors	Power Complementary Silicon Transistors - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150	Original	PDF
2N6052	Microsemi	TRANS DARLINGTON PNP 100V 12A 3TO-3 - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150	Original	PDF
2N6052	Motorola	Darlington Complementary Silicon Power Transistor - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150	Original	PDF
2N6052	On Semiconductor	2N6052 - TRANSISTOR 12 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-3, BIP General Purpose Power	Original	PDF
2N6052	On Semiconductor	Darlington Complementary Silicon Power Transistors	Original	PDF
2N6052	On Semiconductor	Darlington Complementary Silicon Power Transistor	Original	PDF
2N6052	Semelab	Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150	Original	PDF
2N6052	Advanced Semiconductor	Silicon Transistor Selection Guide	Scan	PDF
2N6052	Boca Semiconductor	DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150	Scan	PDF
2N6052	Central Semiconductor	Darlington Bipolar Transistor, PNP, 100V at Tc=25C, TO-3, 2-Pin - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150	Scan	PDF
2N6052	Central Semiconductor	POWER DARLINGTON TRANSISTORS (METAL)	Scan	PDF
2N6052	Crimson Semiconductor	EPITAXIAL BASE / PLANAR Transistors	Scan	PDF
2N6052	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	Scan	PDF

2N6052	General Electric	12A P-N-P monolithic darlington power transistor. - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150	Scan	PDF
2N6052	LAMBDA	Semiconductor Data Book V1 1988	Scan	PDF
2N6052	Mospec	POWER TRANSISTORS(12A,150W) - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150	Scan	PDF
2N6052	Motorola	The European Selection Data Book 1976	Scan	PDF
2N6052	Motorola	Power Transistor Selection Guide	Scan	PDF
2N6052	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF

2N6052 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
100 amp npn darlington power transistors Abstract: 10 amp npn darlington power transistors 2N6050 2N6057 MOTOROLA 2N6059 MOTOROLA darlington complementary power amplifier NPN 300 VOLTS vce POWER TRANSISTOR 1N5825 2n6051 motorola 2N6052 Text: MOTOROLA Order this document by 2N6050/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6050 thru 2N6052* NPN 2N6057 thru 2N6059* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications.	Original	PDF	2N6050/D 2N6050 2N6052* 2N6057 2N6059 2N6050, 2N6051, 2N6058 2N6052, 100 amp npn darlington power transistors 10 amp npn darlington power transistors 2N6050 2N6057 MOTOROLA 2N6059 MOTOROLA darlington complementary power amplifier NPN 300 VOLTS vce POWER TRANSISTOR 1N5825 2n6051 motorola 2N6052
2N6050 Abstract: 2N6057 2N6052 2N6058 2N6051 2N6059 Text: POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base PNP transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types are	Original	PDF	2N6050, 2N6051 2N6052 2N6057, 2N6058 2N6059 2N6050 2N6057 2N6051 2N6058 2N6050 2N6057
2N6052 Abstract: 2N6051 1000C 100C JANTX 2N6052 Text: TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501 Devices Qualified Level 2N6051 JAN JANTX JANTXV 2N6052 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current	Original	PDF	MIL-PRF-19500/501 2N6051 2N6052 1000C O-204AA) 2N6052 2N6051 1000C 100C JANTX 2N6052
2n6059 Abstract: 100 amp darlington transistors 2N6058 2n6052 Text: ON Semiconductort PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN . . . designed for general−purpose amplifier and low frequency switching applications. 2N6058 2N6059* • High DC Current Gain — • hFE = 3500 Typ @ IC = 5.0 Adc Collector−Emitter Sustaining Voltage — @ 100 mA	Original	PDF	2N6052* 2N6058 2N6052, 2N6059 2N6059* 100 amp darlington transistors 2n6052
1N5825 Abstract: 2N6052 2N6058 2N6059 MSD6100 2N6058 MOTOROLA Text: MOTOROLA Order this document by 2N6052/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN 2N6058 2N6059* . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain —	Original	PDF	2N6052/D 2N6052* 2N6058 2N6059 2N6052, 1N5825 2N6052 2N6058 2N6059 MSD6100 2N6058 MOTOROLA
transistor 8026 Abstract: pnp 150w darlington transistor to3 package Text: 2N6052 MECHANICAL DATA PNP DARLINGTON SILICON POWER TRANSISTOR Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1 1.52 (0.06) 3.43 (0.135) 2 VCEO = 100V IC = 12A PD = 150W 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655)	Original	PDF	2N6052 O-204AA) transistor 8026 pnp 150w darlington transistor to3 package
2N605 Abstract: 2N6058 0S3224 2N6058 MOTOROLA 2N6050 2N6051 2N6052 2N6057 2N6059 DS3224 Text: PNP NPN 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 ~~ DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed forgeneral-purpose amplifier and low-speed switching applications. . High DC Current hFE = 3500 Gain — Typ o Collector-Emitter @ IC = 5.0 Adc	Original	PDF	2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6050, 80Vdc 2N6051, 2N605 2N6058 0S3224 2N6058 MOTOROLA 2N6050 2N6051 2N6052 2N6057 2N6059 DS3224
Untitled Abstract: No abstract text available Text: 2N6052 Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for general−purpose amplifier and low frequency switching applications. Features http://onsemi.com • High DC Current Gain — hFE = 3500 Typ @ IC = 5.0 Adc	Original	PDF	2N6052 2N6052/D
Untitled Abstract: No abstract text available Text: 2N6052+JANTX Transistors PNP Darlington Transistor Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)12 Absolute Max. Power Diss. (W)150# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.750	Original	PDF	2N6052
2n6050 Abstract: 2n6057 2N6052 Text: 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 PNP NPN w w w. c e n t r a l s e m i . c o m COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base	Original	PDF	2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6050,
2N6052 Abstract: No abstract text available Text: 2N6052 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	PDF	2N6052 O204AA) 31-Jul-02 2N6052
2N6052G Abstract: 1N5825 2N6052 2N6059 MSD6100 npn transistor TO-3 5 amp 140 volts Text: 2N6052 Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain — hFE = 3500 Typ @ IC = 5.0 Adc • Collector−Emitter Sustaining Voltage — @ 100 mA	Original	PDF	2N6052 O-204AA 2N6052G 1N5825 2N6052 2N6059 MSD6100 npn transistor TO-3 5 amp 140 volts
transistor 206 Abstract: 2N7370 AN-750 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6285 Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051 80 2N6052 PACKAGE DEVICE TYPE PNP TO-3 TO-204AA flCX TO-254AA V cE O Ic/ V c E min/max @ A/V 1*FE @ ^C E (sat) @ IC/IB V @ A/A C(P P Ît (MHz) 750/18000@6/3	OCR Scan	PDF	2N6050 O-204AA 2N6051 2N6052 2N6285 2N6286 2N6287 O-254AA 2N7371 T0-204AA transistor 206 2N7370 AN-750 2N6057 2N6058 2N6059
Untitled Abstract: No abstract text available Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR VcEO sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051A 80 2N6052A PACKAGE DEVICE TYPE PNP TO-3 TO-204AA TO-254AA hrE @ Id VCE min/max @ A/V ^ C E (sa t) @ Ic/Iß V @ A/A c ¥* p fx (MHz) 750/18000@6/3	OCR Scan	PDF	2N6050 2N6051A 2N6052A O-204AA 2N6285 2N6286A 2N6287A 2N7371A 2N6057A

500 watts audio amplifiers schematic diagram Abstract: 2N6057 rca 2N6061 2N6050 2N60S0 31715 2N6051 2N6052 2N6058 2N6059 Text: 3875081 G E SOLID STATE 01 DE \| 3ß?SDfil □□17E3Q □ 1~ T ~ 33- 1 3 Darlington Power = _ 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere Complementary P-N-P and N-P-N Monolithic	OCR Scan	PDF	17E3Q 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere 500 watts audio amplifiers schematic diagram 2N6057 rca 2N6061 2N6050 2N60S0 31715 2N6051 2N6052 2N6058
2N6052 Abstract: No abstract text available Text: SEMTECH CORP 5ÛE D m 613^13=1 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK 00032^0 T2b 2N6051, 2N6052, 2N6058 2N6059 ‘ MAXIMUM RATINGS PARAM ETER SYM BO L C o lle cto r E m itter Voltage Vdc 80 2N6052, 2N6059 100 C o lle cto r B ase Voltage Vdc VCBO 80 2 N 6 0 5 1 , 2N6058	OCR Scan	PDF	2N6051, 2N6052, 2N6058 2N6059 00Q33D2 2N6058, 2N6052
Untitled Abstract: No abstract text available Text: Back to Bipolar Darlington Transistors PNP NPN 2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* *also available a JAN, JANTX, JANTXV DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 12 AMPERE . . . designed for general-purpose am plifier and low frequency	OCR Scan	PDF	2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* 2N6050, 2N6051, 2N6058
Untitled Abstract: No abstract text available Text: r z 7 SGS-THOMSON “ 7# [MO MHLi(m]»KS 2N6050/51/52 2N6057/58/59 COMPLEMENTARY DARLINGTON • HIGH GAIN ■ HIGH CURRENT ■ HIGH DISSIPATION DESCRIPTION The 2N6050, 2N6051 and 2N6052 are silicon epi taxial base PNP transistors in monolithic Darlington	OCR Scan	PDF	2N6050/51/52 2N6057/58/59 2N6050, 2N6051 2N6052 2N6057, 2N6058 2N6059
RCA-2N6050 Abstract: n6050 2N60S Text: 3875081 6 E SOLID STATE Ql DE \| 3fl?SDfil □□17E3Q □ 1~ T~ 3 3 - ?3 Darlington Power = _ 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere Complementary P-N-P and N-P-N Monolithic	OCR Scan	PDF	17E3Q 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere RCA-2N6050 n6050 2N60S
2N6050 Abstract: 2N6051 2N6052 2N6057 2N6058 2N6059 2n60 2N60S Text: DARLINGTOM COMPLEMENTARY SILICON-POWER TRANSISTORS NPN PNP 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 .designed for general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Bult-in Base-Emitter Shunt Resistors.	OCR Scan	PDF	2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6057 2N60S8 2N6058 2N6059 2n60 2N60S
2N6220 Abstract: 2N6256 2N6258 PNP 2N60 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051 Text: 4ÖE J> m Ö1331Ö7 00DÜ442 322 SEMELAB SEMELAB LT D TW t> \ BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051 2N6052 2N6053 2N6054 2N6055 2N6056 2N6057 2N6058 2N6059 2N6077 2N6078 2N6079	OCR Scan	PDF	2N6033 2N6047 2N6049 2N6049E 2N6050 750-12k 2N6051 2N6052 2N6220 2N6256 2N6258 PNP 2N60
2N6050 Abstract: No abstract text available Text: SGS-THOMSON 2N6050/51/52 2N6057/58/59 [¡»æSLitgraiMOOi COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . 2N6050, 2N6052,2N6057 AND 2N6059 ARE SGS-THOMSON PREFERRED SALESTYPES • HIGH GAIN . HIGH CURRENT . HIGH DISSIPATION DESCRIPTION The 2N6050, 2N6051 and 2N6052 are silicon	OCR Scan	PDF	2N6050/51/52 2N6057/58/59 2N6050, 2N6052 2N6057 2N6059 2N6051 2N6057, 2N6050
Untitled Abstract: No abstract text available Text: 2N6052 m \\ SILICON PNP-DARLINGTON POWER TRANSISTOR DESCRIPTION: The ASI 2N6052 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O - 3 k. I MAX. I MAXIMUM RATINGS 12 A lc -100 V ce 150 W @ T C= 2 5 °C P diss -65 °C to +200 °C	OCR Scan	PDF	2N6052 2N6052
2N6059 Abstract: 2N6051 2N6058 2N60S2 2N6052 DARLINGTON 3A 100V npn Text: A LAMBDA COMPLEMENTARY POWER DARLINGTONS 2N6051, 2N6052, 2N6058,2N6059 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK ‘ MAXIMUM RATINGS PA RA M ET ER Collector Emitter Voltage 2N6051, 2N6058 2N6052, 2N6059 Collector Base Voltage 2N 6 05 1, 2N6058 2N6052, 2N6059	OCR Scan	PDF	2N6051, 2N6052, 2N6058 2N6059 2N6058, 2N6059 2N6052 2N6059) 2N6051 2N60S2 DARLINGTON 3A 100V npn

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2N6052 Datasheets (57)

2N6052 Datasheets Context Search

100 amp npn darlington power transistors

2N6050

2N6052

2n6059

1N5825

transistor 8026

2N605

Untitled

Untitled

2n6050

2N6052

2N6052G

transistor 206

Untitled

500 watts audio amplifiers schematic diagram

2N6052

Untitled

Untitled

RCA-2N6050

2N6050

2N6220

2N6050

Untitled

2N6059