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    2N5639 EQUIVALENT Search Results

    2N5639 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    2N5639 EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5639

    Abstract: 2N5638 2N5638 equivalent 2N5369
    Text: 2N5638, 2N5639 2N5638 is a Preferred Device JFET Chopper Transistors N–Channel – Depletion N–Channel Junction Field Effect Transistors, depletion mode Type A designed for chopper and high–speed switching applications. http://onsemi.com • Low Drain–Source “ON” Resistance:


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    PDF 2N5638, 2N5639 2N5638 2N5639 2N5638) 2N5638 equivalent 2N5369

    2N5638

    Abstract: 2N5639 2N5638 equivalent 2N5639 equivalent
    Text: 2N5638, 2N5639 2N5638 is a Preferred Device JFET Chopper Transistors N−Channel − Depletion N−Channel Junction Field Effect Transistors, depletion mode Type A designed for chopper and high−speed switching applications. http://onsemi.com • Low Drain−Source “ON” Resistance:


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    PDF 2N5638, 2N5639 2N5638 2N5639 2N5638) 2N5638 equivalent 2N5639 equivalent

    future scope of jfet

    Abstract: 2N5638 2N5638 equivalent 2N5639 2N5369RLRA 2N5638RLRA
    Text: 2N5638, 2N5639 2N5638 is a Preferred Device JFET Chopper Transistors N–Channel – Depletion N–Channel Junction Field Effect Transistors, depletion mode Type A designed for chopper and high–speed switching applications. http://onsemi.com • Low Drain–Source “ON” Resistance:


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    PDF 2N5638, 2N5639 2N5638 2N5638 2N5638) r14525 2N5638/D future scope of jfet 2N5638 equivalent 2N5639 2N5369RLRA 2N5638RLRA

    2N5638

    Abstract: 2N5639
    Text: 2N5638, 2N5639 2N5638 is a Preferred Device JFET Chopper Transistors N−Channel − Depletion N−Channel Junction Field Effect Transistors, depletion mode Type A designed for chopper and high−speed switching applications. Features http://onsemi.com • Low Drain−Source “ON” Resistance: RDS(on) = 30W for 2N5638


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    PDF 2N5638, 2N5639 2N5638 2N5638 2N5638) 2N5638/D 2N5639

    2N5639

    Abstract: 2N5638 2N5638RLRA 2N5638RLRAG 2N5639G 2N5369RLRA
    Text: 2N5638, 2N5639 2N5638 is a Preferred Device JFET Chopper Transistors N−Channel − Depletion N−Channel Junction Field Effect Transistors, depletion mode Type A designed for chopper and high−speed switching applications. Features http://onsemi.com • Low Drain−Source “ON” Resistance: RDS(on) = 30W for 2N5638


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    PDF 2N5638, 2N5639 2N5638 2N5638 2N5638) 2N5638/D 2N5639 2N5638RLRA 2N5638RLRAG 2N5639G 2N5369RLRA

    2n4392 SPECIFICATION

    Abstract: SST4856 BSR58 equivalent SST4092 VCR2N equivalent SST4857 2N4858 equivalent SST4860 2N4856 SILICONIX SST4858
    Text: Siliconix incorporated HIGH GAIN JFET AMPLIFIERS Cont'd en 'DSS PART# V(BR)GSS (V) MIN MAX (mA) 'GSS (PA) 9fs 9 os (mS) (nS) C| SS (PF) C rs s (PF) 7 12 12 12 13 13 13 12 12 12 3 3.5 3.5 3.5 3.5 3.8 4 3.5 3.5 3.5 4 3 3 3 3 3 3 3 3 3 1 1 1 4 4 4 3.5 3.5 3.5


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    PDF OT-23 SST113 SST4091 SST4092 SST4093 SST4391 SST4392 SST4393 SST4859 SST4860 2n4392 SPECIFICATION SST4856 BSR58 equivalent VCR2N equivalent SST4857 2N4858 equivalent 2N4856 SILICONIX SST4858

    2n1613 equivalent

    Abstract: BC237 diode l 0607
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAV99WT1 BAV99RWT1 SC-70/SOT-323 Dual Series Switching Diode Motorola Preferred Devices The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • ESD Protection • Polarity Reversal Protection


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    PDF SC-70/SOT-323 BAV99WT1 BAV99LT1. BAV99RWT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2n1613 equivalent BC237 diode l 0607

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r


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    PDF MMBFJ175LT1 236AB) Ga218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237

    2N16

    Abstract: BC237 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.


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    PDF MGSF1P02ELT1 L218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N16 BC237 BCY72

    2n2222 h 331 transistors

    Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


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    PDF MGSF3442XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n2222 h 331 transistors 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1

    2N643

    Abstract: BC237 MARKING DP SOT-363 DO204AA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


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    PDF MMBD1010LT1 MMBD2010T1 MMBD3010T1 MMBD1010LT1 S218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2N643 BC237 MARKING DP SOT-363 DO204AA

    BC237

    Abstract: MMBD2005T1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


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    PDF MMBD1005LT1 MMBD2005T1 MMBD3005T1 MMBD1005LT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237

    BC237

    Abstract: MARKING CODE diode sod123 W1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


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    PDF MGSF3441XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10


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    PDF MMBFJ177LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237

    BC237

    Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


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    PDF MGSF3455XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1 K 2056 transistor

    MMBF4856

    Abstract: transistor equivalent 2n5551 BF245 application note MSC2404 MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MDC3105LT1 Motorola Preferred Device Integrated Relay/Solenoid Driver • Optimized to Switch 3 V to 5 V Relays from a 5 V Rail • Compatible with “TX’’ and “TQ’’ Series Telecom Relays Rated up to


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    PDF Automat218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 MMBF4856 transistor equivalent 2n5551 BF245 application note MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093

    2N5640 equivalent

    Abstract: 2N6638 2N5640 PN4391 equivalent Siliconix Dual N-Channel JFETs 2N5638 2N5639 B67A 2N5638 equivalent J113 equivalent
    Text: a Siliconix . designed for Perform ance Curves NC See Section 5 2N5639 B E N E F IT S • Low Cost • Industry Standard Package • Autom atic Insertion Package • Fast Switching lrise < 5 ns 2N5638 Low Insertion Loss RDS(on) < 30 SI (2N5638) Short Sample and Hold Aperture Tim e


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    PDF 100KA, 2N5640 equivalent 2N6638 2N5640 PN4391 equivalent Siliconix Dual N-Channel JFETs 2N5638 2N5639 B67A 2N5638 equivalent J113 equivalent

    2N5640 equivalent

    Abstract: 2N5640
    Text: C alori' N-Channel JFET Switch CORPORATION 2N5B38-2N5B40 ABSOLUTE MAXIMUM RATINGS T a = 25°C unless otherwise specified PIN CONFIGURATION Drain-Source Voltage. 30V Drain-Gate Voltage . 30V


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    PDF 2N5B38-2N5B40 2N5639) 300ns, 2N5638-2N5640 10VDC 2N5640 equivalent 2N5640

    2N5640 equivalent

    Abstract: SILICONIX 2N4391 2N5638 2N5638 equivalent Siliconix JFET Duals
    Text: SILICONIX INC UE • Ö554735 QQ13ÖS7 □ ■ 2N5638 SERIES C T 'S ilic o n ix incorporated T-ZS - Z - 5 N-Channel JF E T The 2N5638 Series is a multi-purpose n-channel JFET designed to economically enhance circuit performance, These devices are especially well


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    PDF 2N5638 2N5639 2N5640 2N5640 equivalent SILICONIX 2N4391 2N5638 equivalent Siliconix JFET Duals

    2N5640 equivalent

    Abstract: 2N6638 2N5640 2N5638 2N5639 B67A 2N5638 equivalent FC4A 2N663
    Text: a S ilico n ix . designed for Performance Curves NC See Section 5 BENEFITS »ABSOLUTE M A X IM U M RATINGS 25°C Low Cost Industry Standard Package A utom atic Insertion Package Fast Switching l rise < 5 ns (2N5638) Low Insertion Loss RDS(on) < 30 SI (2N5638)


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    PDF 2N6638) 2N5639) 2N5640) -10VDC 2N5640 equivalent 2N6638 2N5640 2N5638 2N5639 B67A 2N5638 equivalent FC4A 2N663

    TA7420

    Abstract: TA7530 TA7513 2N5840 2NS83 Tektronix P6019 2N5839 2N5838 equivalent 2n5840
    Text: 3875081 G E SOLID STATECI DE | 3 û 7 S D f l l 0017172 I D 7^77 High-Voltage Power Transistors _ 2N5838, 2N5839, 2N5840 File Number 410 High-Voltage, High-Power Silicon N-P-N Power Transistors


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    PDF 2N5838, 2N5839, 2N5840 2N5840] 2N5839] 2NS838] 92CS-27S16 RCA-2N5838, 2N5839 2N5840" TA7420 TA7530 TA7513 2NS83 Tektronix P6019 2N5838 equivalent 2n5840

    E421 fet

    Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
    Text: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.


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    PDF O-72P* O-92X O-105 O-106 O-106P E421 fet equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet

    TIS88A equivalent

    Abstract: 2N3456 equivalent J411 fet 2n5952 equivalent 2n3820 equivalent 2N5248 equivalent fet 2N4304 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent
    Text: a t t m ,© O R D E R IN G IN F O R M A T IO N Devices, Inc T O / » © 0© T Q K © K lO tP i M f l® The following is the product code index lor J-FET and MOS FET DIE/WAFERS having 2N, 3N JEDEC prefixes. This product code index is Solitron San Diego's standard for Q. A. production, marketing and sales.


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    PDF 20x40 111x109 TIS88A equivalent 2N3456 equivalent J411 fet 2n5952 equivalent 2n3820 equivalent 2N5248 equivalent fet 2N4304 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent

    siliconix fet

    Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
    Text: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility


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    PDF J-23548 K24123 i39-40i NZ3766 53-C-03 siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10