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Microchip Technology Inc 2N5630 POWER BJT
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DigiKey	2N5630	Bulk			100	1 - 10 - 100 $64.2504 1000 $64.2504 10000 $64.2504	Buy Now
Avnet Americas	2N5630	Bulk		36 Weeks	100	1 $67.8062 10 $67.8062 100 $62.64414 1000 $62.50949 10000 $62.50949	Buy Now
Newark	2N5630	Bulk			100	1 - 10 - 100 $64.25 1000 $61.78 10000 $61.78	Buy Now
Future Electronics	2N5630				100	1 - 10 - 100 $68.64 1000 $68.64 10000 $68.64	Buy Now
NAC	2N5630				5	1 $70.6 10 $70.6 100 $65.03 1000 $60.27 10000 $60.27	Buy Now
Solitron Devices Inc 2N5630 TRANSISTOR,BJT,NPN,120V V(BR)CEO,16A I(C),TO-3
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Quest Components	2N5630		1			1 $11.85 10 $7.9 100 $7.9 1000 $7.9 10000 $7.9	Buy Now
New England Semiconductor 2N5630 TRANSISTOR,BJT,NPN,120V V(BR)CEO,16A I(C),TO-3
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Quest Components	2N5630		1			1 $23.6352 10 $23.6352 100 $23.6352 1000 $23.6352 10000 $23.6352	Buy Now

2N5630 Datasheets (34)

Part	Manufacturer	Description	Datasheet Type	PDF
2N5630	Central Semiconductor	COMPLEMENTARY SILICON POWER TRANSISTOR	Original	PDF
2N5630	Motorola	Collector-emitter/base voltage: 120Vdc 16 Amp high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits - Pol=NPN / Pkg=TO3 / Vceo=120 / Ic=16 / Hfe=20/80 / fT(Hz)=1M / Pwr(W)=200	Original	PDF
2N5630	Semelab	Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=120 / Ic=16 / Hfe=20/80 / fT(Hz)=1M / Pwr(W)=200	Original	PDF
2N5630	Advanced Semiconductor	Silicon Transistor Selection Guide	Scan	PDF
2N5630	API Electronics	Short form transistor data	Short Form	PDF
2N5630	Diode Transistor	Silicon Transistors	Scan	PDF
2N5630	Diode Transistor	Silicon Transistors	Scan	PDF
2N5630	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	Scan	PDF
2N5630	General Electric	Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. - Pol=NPN / Pkg=TO3 / Vceo=120 / Ic=16 / Hfe=20/80 / fT(Hz)=1M / Pwr(W)=200	Scan	PDF
2N5630	Motorola	The European Selection Data Book 1976	Scan	PDF
2N5630	Motorola	European Master Selection Guide 1986	Scan	PDF
2N5630	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2N5630	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N5630	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF

2N5630	Unknown	Silicon NPN Transistor	Scan	PDF
2N5630	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N5630	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N5630	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2N5630	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N5630	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF

2N5630 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N6030 Abstract: 2N6029 2N5629 2N5630 Text: Inchange Semiconductor Product Specification 2N6029 2N6030 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5629 2N5630 ・High power dissipations APPLICATIONS ・For high voltage and high power amplifier applications	Original	PDF	2N6029 2N6030 2N5629 2N5630 2N6029 2N6030 2N5630
2N5629 Abstract: 2N5630 2N6029 2N6030 Text: Inchange Semiconductor Product Specification 2N5629 2N5630 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6029 2N6030 APPLICATIONS ・For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base	Original	PDF	2N5629 2N5630 2N6029 2N6030 2N5629 2N5630 2N6030
Untitled Abstract: No abstract text available Text: , Dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N5629 2N5630 NPN 2N60Z9 2N6030 PNP COMPLEMENTARY SILICON POWER TRANSISTORS JEDEC TO-3 CASE MAXIMUM RATINGS (TC=25°C unless otherwise noted)	Original	PDF	2N5629 2N5630 2N60Z9 2N6030 2N5630 2N6030 2N5629 2N6Q29
2N5631 equivalent Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —	Original	PDF	2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Motorola transistor 388 TO-204AA Abstract: 714 ic BC 458 2SC124 BU108 BU326 2SA1046 2SC7 BDX54 2SD214 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6030 thru 2N6031 See 2N5630 Plastic Darlington Complementary Silicon Power Transistors PNP 2N6035 . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —	Original	PDF	2N6030 2N6031 2N5630) 2N6035, 2N6038 2N6036, 2N6039 225AA 2N6035 2N6036* Motorola transistor 388 TO-204AA 714 ic BC 458 2SC124 BU108 BU326 2SA1046 2SC7 BDX54 2SD214
2N6031 MOTOROLA Abstract: 2N5630 2N5629 MOTOROLA MOTOROLA 2N6031 2n6029 2N6031 2N5629 MOTOROLA 2N5631 2N5631 2N6030 Text: MOTOROLA Order this document by 2N5630/D SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —	Original	PDF	2N5630/D 2N5630 2N5631 2N6030 2N5630, 2N5631, 2N6031 2N6031 MOTOROLA 2N5630 2N5629 MOTOROLA MOTOROLA 2N6031 2n6029 2N6031 2N5629 MOTOROLA 2N5631 2N5631 2N6030
2N5629 Abstract: 2N5630 2N6029 2N6030 Text: Product Specification www.jmnic.com 2N5629 2N5630 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6029 2N6030 APPLICATIONS ・For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter	Original	PDF	2N5629 2N5630 2N6029 2N6030 2N5629 2N5630 2N6030
2N5630 Abstract: 2N5629 2N6029 2N6030 Text: SavantIC Semiconductor Product Specification 2N5629 2N5630 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N6029 2N6030 APPLICATIONS ·For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base	Original	PDF	2N5629 2N5630 2N6029 2N6030 2N5629 2N5630 2N6030
2n6029 Abstract: 2N5630 Text: 2N5629 2N5630 2N6029 2N6030 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5629, 2N6029 series devices are complementary silicon power transistors, manufactured by the epitaxial base	Original	PDF	2N5629 2N5630 2N6029 2N6030 2N5629, 2N6029 2N6029) 2N5630, 2N6030) 500kHz 2N5630
TO-225AA Abstract: 2n6039 motorola 10 amp npn darlington power transistors Darlington Silicon Power Transistor darlington power transistor NPN 300 VOLTS vce POWER TRANSISTOR 1N5825 2N5630 2N6030 2N6031 Text: MOTOROLA Order this document by 2N6035/D SEMICONDUCTOR TECHNICAL DATA 2N6030 thru 2N6031 See 2N5630 Plastic Darlington Complementary Silicon Power Transistors PNP 2N6035 . . . designed for general–purpose amplifier and low–speed switching applications.	Original	PDF	2N6035/D 2N6030 2N6031 2N5630) 2N6035 2N6035, 2N6038 2N6036, 2N6039 225AA TO-225AA 2n6039 motorola 10 amp npn darlington power transistors Darlington Silicon Power Transistor darlington power transistor NPN 300 VOLTS vce POWER TRANSISTOR 1N5825 2N5630 2N6031
30G140 Abstract: 2SC2922 SANKEN LS2025 2SC3241 2N5629 MOTOROLA MRF454 motorola MRF435 40363 MJ15026 2SC2608 Text: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2N6359 B0315 MJE4340 MJE4340 B0317 PTC173 2N5629 2N6302 ~j~:~:~ 25 30 MJ6302 2N5630 BOY77 BOY77 BOY37 2N3773 BOY37A BOY37A ~j~:~:~ 35 40 MJ3773 MJ3773 MJ3773 2N5631 2S0873 BOX50 BOX50 TRW6259 ~~~~~~3	Original	PDF	OT-121var BUV26 STIPL757 TIPL757 STIPL757A 2SC2782 2SC2694 MRF247 30G140 2SC2922 SANKEN LS2025 2SC3241 2N5629 MOTOROLA MRF454 motorola MRF435 40363 MJ15026 2SC2608
Untitled Abstract: No abstract text available Text: 2N5630 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	PDF	2N5630 O204AA) 16-Jul-02
2N5630 Abstract: No abstract text available Text: 2N5630 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	PDF	2N5630 O204AA) 31-Jul-02 2N5630
2N6030 Abstract: 2N6029 2N5629 2N5630 Text: SavantIC Semiconductor Product Specification 2N6029 2N6030 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N5629 2N5630 ·High power dissipations APPLICATIONS ·For high voltage and high power amplifier applications PINNING	Original	PDF	2N6029 2N6030 2N5629 2N5630 2N6029 2N6030 2N5630

2N5631 Abstract: 2n6031 2N5629 2n6030 2n5630 Text: ON Semiconductort NPN High-Voltage Ċ High Power Transistors 2N5630 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. PNP 2N5631 2N6030 • High Collector Emitter Sustaining Voltage — • •	Original	PDF	2N5630 2N5631 2N6030 2N6031 2N5630, 2N6030 2N5631, 2N6031 2N5629
2N5629 Abstract: 2NS63 2N631 92CS-30I4 Text: File Number 1141 2N5629, 2N5630, 2N5631 7 ^ 3 3 - HARR IS S E M I C O N D SE CT OR SbE D & 43G E E7 1 0 0 4 ü 4 b 3 flOö • I H AS TERMINAL DESIGNATIONS Silicon N-P-N Epitaxial-Base High-Power Transistors Rugged, Broadly Applicable Devices For Industrial and Commercial Use	OCR Scan	PDF	2N5629, 2N5630, 2N5631 92CS-ZF516 O-204AA T0-204AA 2-l/l01c 2N5629 2NS63 2N631 92CS-30I4
transistor 2n6038 Abstract: 2N6039 Text: MOTOROLA Order this document by 2N6035/D SEMICONDUCTOR TECHNICAL DATA 2N6030 thru 2N6031 See 2N5630 P lastic Darlington C om plem entary Silicon Pow er Transistors PNP 2N 60 35 . . . designed for general-purpose amplifier and low -speed switching applications.	OCR Scan	PDF	2N6035/D 2N6035, 2N6038 2N6036, 2N6039 -225A 2N6030 2N6031 2N5630) 2N6035 transistor 2n6038
2n5631 Abstract: 2N5629 2NS631 Text: File N um ber 2N5629, 2N5630, 2N5631 1141 TERMINAL DESIGNATIONS Silicon N-P-N Epitaxial-Base High-Power Transistors Rugged, Broadly Applicable Devices For Industrial and Commercial Use Feature*: • H ig h d is s ip a tio n c a p a b ility ■ L o w s a tu ra tio n voltages	OCR Scan	PDF	2N5629, 2N5630, 2N5631 92CS-27516 O-204AA 2NS630 2NS631 2n5631 2N5629
2N5130 Abstract: 2N5629 2N5630 2N5631 Text: Qï 3875081 G E SOLID STATE D T W B â T S Ï Ï â ï T G Ï Ï V ? 3^ 3 ” 01E 17393 I D General-Purpose Power Transistors File N u m b e r 1141 2N5629, 2N5630, 2N5631 TERM INAL DESIGNATIONS	OCR Scan	PDF	2N5629, 2N5630, 2N5631 cs-i79i6 O-204AA RCA-2N5629, 2N5630 2N5631 3fl750fll DD173TS 2N5130 2N5629
2N5629 MOTOROLA Abstract: 2N5629 2n6029 2N6030 2N6031 Text: M O T O R O LA SC XSTRS/R F 1SE D \| b3b?aSM MOTOROLA SEMICONDUCTOR TECHNICAL DATA GGÔMSSG □ \| r - 33-/0 NPN PNP 2N5629 2N5630 2N5631 2N6029 2N6030 2N6031 HIGH-VOLTAGE - HIGH POWER TRANSISTORS 16 AMPERE . . . designed fo r use in high pow er audio am p lifie r applications and	OCR Scan	PDF	2N5629 2N5630 2N5631 2N6029 2N6030 2N6031 2N6029, 2N6030, b3t72SM 2N5629 MOTOROLA 2N6031
92CS-30I4 Abstract: 2N5629 2N5630 92CS-3 42CQ RCA-2N5629 2n5631 rca Text: Qï 3875081 G E SOLID STATE B T fB F T S D â ir Ô Q V m r i- ” 01E 17393 D General-Purpose Power Transistors File N um ber 1141 2N5629, 2N5630, 2N5631 TERMINAL DESIGNATIONS Silicon N-P-N	OCR Scan	PDF	2N5629, 2N5630, 2N5631 O-204AA RCA-2N5629, 2N5630 2N5631 92CS-30I48 92CS-30I5I 92CS-30I4 2N5629 92CS-3 42CQ RCA-2N5629 2n5631 rca
2N5630 Abstract: 2n603 2N6031 Text: MOTOROLA Order this document by 2N5630/D SEMICONDUCTOR TECHNICAL DATA NPN 2 N 5 6 30 H igh-V oltage — High Power Transistors 2N5631 PNP . . . designed for use in high power audio am plifier applications and high voltage switching regulator circuits. 2 N 6 0 30	OCR Scan	PDF	2N5630/D 2N5630, 2N6030 2N6031 2N5631 2N6031 O-204AA 2N5630 2n603
J377 Abstract: 2N4211 to63 J3772 2N3237 2N3598 2N3599 2N3773 2N5631 2N6259 Text: DIODE TRANSISTOR CO INC fl4 DE \| 2fl4ñ35S 0000130 3 TJ~ö D1QEE TR<aHI5J5TQR CD., INC. (201 686-0400 »Telex: 139-385 • Outside NY & NJ area call T O LL F R E E 800-526-4581 FAX No. 201-575-5863 Device Type hFE V CEO Max(V) Mln/Max 2N3773 2N5629 2N5630	OCR Scan	PDF	Q00013A DlQDETft4l\l515TDRCQ 2N3773 N5629 N5630 2N5631 2N6259 2N6359 2N3237 N3597 J377 2N4211 to63 J3772 2N3598 2N3599
2N424 Abstract: 2N1722 2N389 to-53 2N389A 2N5067 2N5068 2N5630 2N5631 2N5632 Text: POWER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS @ 25°C BVcbo BVcto BVebo Ic Watts V V V A hre @ MIN MAX Ic A Va V Sat Voltages V a V« V V Test Conditions Ib Ic I ebo A A ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1 2 .4 1.2	OCR Scan	PDF	2N5067 2N5068 N5069 N5629 2N5630 2N5631 2N5632 2N5633 2N5634 TWX-510-224-6582 2N424 2N1722 2N389 to-53 2N389A

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2N5630 Search Results

2N5630 Price and Stock

Microchip Technology Inc 2N5630

Solitron Devices Inc 2N5630

New England Semiconductor 2N5630

2N5630 Datasheets (34)

2N5630 Datasheets Context Search

2N6030

2N5629

Untitled

2N5631 equivalent

Motorola transistor 388 TO-204AA

2N6031 MOTOROLA

2N5629

2N5630

2n6029

TO-225AA

30G140

Untitled

2N5630

2N6030

2N5631

2N5629

transistor 2n6038

2n5631

2N5130

2N5629 MOTOROLA

92CS-30I4

2N5630

J377

2N424