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    onsemi 2N5551BU

    TRANS NPN 160V 0.6A TO92-3
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    onsemi 2N5551TF

    TRANS NPN 160V 0.6A TO92-3
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    onsemi 2N5550TAR

    TRANS NPN 140V 0.6A TO92-3
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    DigiKey 2N5550TAR Cut Tape 37,530 1
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    2N5550TAR Ammo Pack 32,000 2,000
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    Rochester Electronics 2N5550TAR 95,383 1
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    onsemi 2N5551YBU

    TRANS NPN 160V 0.6A TO92-3
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    DigiKey 2N5551YBU Bulk 19,141 1
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    onsemi 2N5550TFR

    TRANS NPN 140V 0.6A TO92-3
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    DigiKey 2N5550TFR Cut Tape 18,546 1
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    EBV Elektronik 2N5550TFR 12 Weeks 2,000
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    2N55 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N55 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N55 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N55 Unknown GE Transistor Specifications Scan PDF
    2N55 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N55 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N55 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2N55 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N550 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N550 Central Semiconductor Various Transistors Scan PDF
    2N550 Central Semiconductor Transistor Selection Guide Scan PDF
    2N550 General Diode Transistor Selection Guide Scan PDF
    2N550 General Semiconductor Low Frequency Silicon Power NPN Transistor Scan PDF
    2N550 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N550 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N550 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N550 Unknown GE Transistor Specifications Scan PDF
    2N550 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N550 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N550 Unknown Vintage Transistor Datasheets Scan PDF
    2N550 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    ...

    2N55 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5601

    Abstract: 2N5597 2N5599 2N5603
    Text: Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5597 2N5599 2N5601 2N5603 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector-emitter saturation voltage APPLICATIONS ・For high frequency power amplifier ;


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    PDF 2N5597 2N5599 2N5601 2N5603 2N5597 2N5599/5601 2N5603

    2N5597

    Abstract: 2N5601 2N5599 2N5603
    Text: Inchange Semiconductor Product Specification 2N5597 2N5599 2N5601 2N5603 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For high frequency power amplifier ;


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    PDF 2N5597 2N5599 2N5601 2N5603 2N5597 2N5599/5601 2N5603

    Untitled

    Abstract: No abstract text available
    Text: Transistor IC Transistors DIP SMDType Type SMD Type Product specification 2N5551 Features Switching and amplification in high voltage Applications such as telephony Low current max. 600mA High voltage(max.180V) Absolute Maximum Ratings Ta = 25 Parameter Symbol


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    PDF 2N5551 600mA) 100MHz

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  FEATURES * High collector-emitter voltage: VCEO=160V * High current gain  APPLICATIONS * Telephone switching circuit * Amplifier  ORDERING INFORMATION


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    PDF 2N5551 2N5551L-x-AB3-R 2N5551G-x-AB3-R OT-89 2N5551L-x-T92-B 2N5551G-x-T92-B 2N5551L-x-T92-K 2N5551G-x-T92-K 2N5551L-x-T92-A-B 2N5551G-x-T92-A-B

    2N5551 circuit

    Abstract: 2N5550 2N5551 2N555 1N914
    Text: ON Semiconductort 2N5550 2N5551* Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector–Emitter Voltage VCEO 140 160 Vdc Collector–Base Voltage VCBO 160 180 Vdc Emitter–Base Voltage


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    PDF 2N5550 2N5551* 2N5551 226AA) r14525 2N5550/D 2N5551 circuit 2N5550 2N5551 2N555 1N914

    2N555

    Abstract: 2N5559
    Text: SavantIC Semiconductor Product Specification 2N5559 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Excellent safe operating area APPLICATIONS ·For industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power


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    PDF 2N5559 2N555 2N5559

    2N5597

    Abstract: 2N5599 2N5601 2N5603
    Text: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N5597 2N5599 2N5601 2N5603 DESCRIPTION •With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers.


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    PDF 2N5597 2N5599 2N5601 2N5603 2N5597 2N5599/5601 2N5603

    transistor 2n5550

    Abstract: 2N5550
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5550 TO-92 Plastic Package High Voltage NPN Transistor For General Purpose and Telephony Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


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    PDF 2N5550 C-120 2N5550Rev190701 transistor 2n5550 2N5550

    2N5551B

    Abstract: 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 2N5551YTA 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU
    Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    PDF 2N5551 MMBT5551 2N5551 OT-23 2N5551YIUBU 2N5551YTA 2N5551TA 2N5551CBU 2N5551IUTA 2N5551B 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU

    transistor 2n5550

    Abstract: 2N5550
    Text: SEMICONDUCTOR 2N5550 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking 2N 1 5550 K 3 No. Item 816 2 4 Marking Description 2N Series Name 5550 Device Name KEC K KEC CORP. Lot No. 816 Device Name 1998. 6. 23 Revision No : 0 8 Year


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    PDF 2N5550 transistor 2n5550 2N5550

    2N555

    Abstract: 2N5550S SOT-23 2N5550S
    Text: SEMICONDUCTOR 2N5550S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZP 1 2 Item Marking Description Device Mark ZP 2N5550S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


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    PDF 2N5550S OT-23 2N555 2N5550S SOT-23 2N5550S

    transistor 2n5550

    Abstract: 2N5550
    Text: SEMICONDUCTOR 2N5550 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES High Collector Breakdwon Voltage : VCBO=160V, VCEO=140V N E K Low Leakage Current. G D J : ICBO=100nA Max. , VCB=100V


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    PDF 2N5550 100nA 100MHz transistor 2n5550 2N5550

    2N558

    Abstract: 2N5581
    Text: 2N5581 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose switching • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5581J • JANTX level (2N5581JX)


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    PDF 2N5581 MIL-PRF-19500 2N5581J) 2N5581JX) 2N5581JV) MIL-STD-750 MIL-PRF-19500/423 2N558 2N5581

    2n5248

    Abstract: PF5101 2N5248 equivalent 2N5247 PN4857 PN4858 U1897 2N5245 PF5301-2 2N5460
    Text: Discrete POWER & Signal Technologies N-Channel JFETs Switches / Choppers BVGSS BVGDO V @ IG µA) Min (µ IGSS *IDGO (nA) @ VDG Max (V) ID(off) V (nA) @ V DS GS Max (V) (V) VP ID (V) @ VDS (nA) Min Max (V) Device No. Case Style 2N5555 2N5638 2N5639 2N5640


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    PDF 2N5555 2N5638 2N5639 2N5640 PN4360 PN5033 2n5248 PF5101 2N5248 equivalent 2N5247 PN4857 PN4858 U1897 2N5245 PF5301-2 2N5460

    2N5551

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR 2N5551 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VCBO=180V, VcEO=160V . Low Leakage Current : IcBO= 50nA(Max.) @ VcB=120V . Low Saturation Voltage


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    PDF 2N5551 100MHz 2N5551

    2n5549

    Abstract: No abstract text available
    Text: TYPE 2N5549 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T I N N O . D L -S 7 0 1 1 1 2 4 , J U N E 1 9 7 0 FOR LOW-LEVEL CHOPPERS, LOGIC SWITCHES, MULTIPLEXERS, AND RF AND VHF AMPLIFIERS • High lyfsl/Ciss Ratio High-Frequency Figure-of-Merit


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    PDF 2N5549

    2N5546

    Abstract: No abstract text available
    Text: T Y P E S 2N5545, 2N5546, 2N5547 D U A L N C H A N N E L SILICON J U N C T IO N F IE L D -E F F E C T TR A N S IS TO R S B U L L E T IN NO. DL-S 7311696, M AR CH 1 9 7 2 -R E V IS E D M AR CH 1973 M A T C H E D F IE L D -E F F E C T TR AN SISTO RS • High lyf$l/Ciss Ratio High-Frequency Figure-of-Merit


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    PDF 2N5545, 2N5546, 2N5547 2N5546

    2n5566

    Abstract: 2N5564 2N5565 2sc 5198 equivalent
    Text: 2N5564/5565/5566 Vishay Siliconix Matched N-Channel JFET Pairs PRODUCT SUMMARY Part Number V G S o ff (V) V (B R )G S S M i n (V) gfs Min (mS) lG TVp(pA) |VGsi “ V q s 2 ( Max (mV) 2N5564 -0 .5 to - 3 -4 0 7.5 -3 5 2N5565 -0 .5 to - 3 -4 0 7.5 -3 10 2N5566


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    PDF 2N5564/5565/5566 2N5564 2N5565 2N5566 S-04031-- 04-Jun-01 S-04031--Rev. 2sc 5198 equivalent

    TO71 package

    Abstract: 2N5565 2n5564 2N5566
    Text: Tem ic 2N5564/5565/5566 S e m i c o n d u c t o r s Matched N-Chanel JFET Pairs Product Summary P a rt N u m b er VGS off (V) V (B R )G S S M in(V ) gis M in (mS) I g TVp (pA) 2N5564 -0.5 to -3 -40 7.5 -3 5 2N5565 -0.5 t o -3 -40 7.5 -3 10 2N5566 -0.5 to -3


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    PDF 2N5564/5565/5566 2N5564 2N5565 2N5566 P-37406-- 25-Jul-94 TO71 package 2N5566

    2N5545

    Abstract: Siliconix JFET Duals
    Text: 2N5545/46/47/JANTX/JANTXV Vishay Siliconix Monolithic N-Channel JFET Duals PRODUCT SUMMARY Part Number VgW V gl8 Min mS) lG Max(pA) 2N5545 - 0 . 5 to - 4 . 5 -5 0 1.5 -5 0 5 2N 5546 - 0 . 5 to - 4 . 5 -5 0 1.5 -5 0 10 2N 5547 - 0 . 5 to - 4 . 5 -5 0 1.5


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    PDF 2N5545/46/47/JANTX/JANTXV 2N5545 S-04031--Rev. 04-Jun-01 Siliconix JFET Duals

    2N5591

    Abstract: 2N5590 2N5589 transistor 2N5589 2n5591_
    Text: S G S-"THOMSON Q5C Q | ?cia clS 3 7 T-JS'-u 0 0 0 0 jb fl2 SOLID STATE MICROWAVE 2N 5589 2N 5590 2N5591 THOMSON-CSF COMPONENTS CORPORATION Montgomeryviile, PA 18936 • 215 362-8500 ■ T W X 510-661-7299 3 W /1 0 W /2 4 W, 12.5 V VHF POWER TRANSISTOR DESCRIPTION:


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    PDF PA18936 2N5589 2N5590 2N5591 MT-71 N5590 transistor 2N5589 2n5591_

    Untitled

    Abstract: No abstract text available
    Text: IN TER F E T CORP 2bE Mfl2bösa o o o o n o ? D T- 9/-&0 A4 N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at TA - 25 °C VgSioHi V|0B|GSS Max nA> 2N5556 *30 -1 0 -0 1 -1 5 2N5557 -3 0 -1 0 -0 1 -1 5 2N5558 -3 0 -1 0 -0 1 -1 5 2N6451 -2 0


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    PDF 2N5556 2N5557 2N5558 2N6451 2N6452 2N6453 2N64S4 NF5101 2N6449 2N6450

    Untitled

    Abstract: No abstract text available
    Text: Lead Mounted Transistors NPN Transistors/TO-92 Type Number 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 MPSA05/ITTA05 MPSA06/ITTA06 2N5551 MPSA42 VCEO Volts 25 25 30 40 40 40 60 80 160 300 hpE @ V ce/Ic V/mA 120-360 100-750 350-1400 100-300 100-300 100-300 min. 50


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    PDF Transistors/TO-92 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 MPSA05/ITTA05 MPSA06/ITTA06 2N5551

    2N5552

    Abstract: 432 t TO-5 stud
    Text: 2N5552 POWER TRANSISTORS 5552-4 10 Amp, 120V, Planar NPN DESCRIPTION Unitrode power transistors provide a unique combination of low saturation voltage, high gain and fast switching. They are ideally suited for power supply pulse amplifier and similar high efficiency power


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    PDF 2N5552 10MHz 250ma 250ma 432 t TO-5 stud