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    2N4416 NATIONAL Search Results

    2N4416 NATIONAL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54HC221AJ/883C Rochester Electronics Replacement for National Semiconductor part number MM54HC221AJ/883C. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics Buy
    9015DM/B Rochester Electronics LLC Replacement for National Semiconductor part number 9015DMQB. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    LMX2305WG/B Rochester Electronics LLC Replacement for National Semiconductor part number LMX2305WG. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    DM54173J/B Rochester Electronics LLC Replacement for National Semiconductor part number DM54173J/883. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    54161DM/B Rochester Electronics LLC Replacement for National Semiconductor part number 54161DMQB. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy

    2N4416 NATIONAL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LM103 zener

    Abstract: jfet cascode 2N3069 J FET RF Cascode Input 2N3070 FM3954 pierce crystal oscillator 2n4416 jfet HI-FI tone control transistors FM1208
    Text: FET Circuit Applications FET Circuit Applications National Semiconductor Application Note 32 February 1970 Polycarbonate dielectric TL H 6791 – 1 Sample and Hold With Offset Adjustment The 2N4339 JFET was selected because of its low lGSS k100 pA very-low lD(OFF) (k50 pA) and low pinchoff volt-


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    PDF 2N4339 2N4393 2N4393 LM103 zener jfet cascode 2N3069 J FET RF Cascode Input 2N3070 FM3954 pierce crystal oscillator 2n4416 jfet HI-FI tone control transistors FM1208

    MRD721

    Abstract: OPA37EJ LF156A OPA606 OPA606KM OPA606KP OPA606LM 2n4416 transistor die JUNG FA 10
    Text: OPA606 Wide-Bandwidth Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 13MHz typ ● OPTOELECTRONICS ● HIGH SLEW RATE: 35V/µs typ ● LOW BIAS CURRENT: 10pA max at TA = +25°C ● LOW OFFSET VOLTAGE: 500µV max ● LOW DISTORTION: 0.0035% typ at 10kHz


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    PDF OPA606 13MHz 10kHz OPA606 LF156A OPA37EJ 150pF MRD721 OPA37EJ OPA606KM OPA606KP OPA606LM 2n4416 transistor die JUNG FA 10

    MRD721

    Abstract: OPA606KM riaa preamplifier circuit diagram LF156A OPA606 OPA606KP OPA606LM 2n4416 transistor die 2N4416
    Text: OPA606 Wide-Bandwidth Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 13MHz typ ● OPTOELECTRONICS ● HIGH SLEW RATE: 35V/µs typ ● LOW BIAS CURRENT: 10pA max at TA = +25°C ● LOW OFFSET VOLTAGE: 500µV max ● LOW DISTORTION: 0.0035% typ at 10kHz


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    PDF OPA606 13MHz 10kHz OPA606 LF156A OPA37EJ 150pF MRD721 OPA606KM riaa preamplifier circuit diagram OPA606KP OPA606LM 2n4416 transistor die 2N4416

    LF156A

    Abstract: OPA606 OPA606KM OPA606KP OPA606LM 2n4416 transistor die RIAA preamplifier
    Text: OPA606 Wide-Bandwidth Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 13MHz typ ● OPTOELECTRONICS ● HIGH SLEW RATE: 35V/µs typ ● LOW BIAS CURRENT: 10pA max at TA = +25°C ● LOW OFFSET VOLTAGE: 500µV max ● LOW DISTORTION: 0.0035% typ at 10kHz


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    PDF OPA606 13MHz 10kHz OPA606 LF156A OPA606KM OPA606KP OPA606LM 2n4416 transistor die RIAA preamplifier

    lmC 470

    Abstract: MRD721 LF156A OPA606 OPA606KM OPA606KP OPA606LM FET 2N4416 PDS-598D
    Text: OPA606 Wide-Bandwidth Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 13MHz typ ● OPTOELECTRONICS ● HIGH SLEW RATE: 35V/µs typ ● LOW BIAS CURRENT: 10pA max at TA = +25°C ● LOW OFFSET VOLTAGE: 500µV max ● LOW DISTORTION: 0.0035% typ at 10kHz


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    PDF OPA606 13MHz 10kHz OPA606 LF156A lmC 470 MRD721 OPA606KM OPA606KP OPA606LM FET 2N4416 PDS-598D

    Untitled

    Abstract: No abstract text available
    Text: OPA606 Wide-Bandwidth Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 13MHz typ ● OPTOELECTRONICS ● HIGH SLEW RATE: 35V/µs typ ● LOW BIAS CURRENT: 10pA max at TA = +25°C ● LOW OFFSET VOLTAGE: 500µV max ● LOW DISTORTION: 0.0035% typ at 10kHz


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    PDF OPA606 13MHz 10kHz OPA606 LF156A

    Untitled

    Abstract: No abstract text available
    Text: OPA606 Wide-Bandwidth Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 13MHz typ ● OPTOELECTRONICS ● HIGH SLEW RATE: 35V/µs typ ● LOW BIAS CURRENT: 10pA max at TA = +25°C ● LOW OFFSET VOLTAGE: 500µV max ● LOW DISTORTION: 0.0035% typ at 10kHz


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    PDF OPA606 13MHz 10kHz OPA606 LF156A

    riaa preamplifier circuit diagram

    Abstract: LF156A OPA606 OPA606KM OPA606KP OPA606LM riaa
    Text: OPA606 Wide-Bandwidth Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 13MHz typ ● OPTOELECTRONICS ● HIGH SLEW RATE: 35V/µs typ ● LOW BIAS CURRENT: 10pA max at TA = +25°C ● LOW OFFSET VOLTAGE: 500µV max ● LOW DISTORTION: 0.0035% typ at 10kHz


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    PDF OPA606 13MHz 10kHz OPA606 LF156A riaa preamplifier circuit diagram OPA606KM OPA606KP OPA606LM riaa

    riaa

    Abstract: No abstract text available
    Text: OPA606 Wide-Bandwidth Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 13MHz typ ● OPTOELECTRONICS ● HIGH SLEW RATE: 35V/µs typ ● LOW BIAS CURRENT: 10pA max at TA = +25°C ● LOW OFFSET VOLTAGE: 500µV max ● LOW DISTORTION: 0.0035% typ at 10kHz


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    PDF OPA606 13MHz 10kHz OPA606 LF156A riaa

    riaa preamplifier circuit diagram

    Abstract: phono preamplifier circuit diagram MRD721 bifet differential high accuracy riaa important application of IC 566 lm 1510 monolithic circuit layout motorola automotive power transistor opa606
    Text: OPA606 Wide-Bandwidth Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 13MHz typ ● OPTOELECTRONICS ● HIGH SLEW RATE: 35V/µs typ ● LOW BIAS CURRENT: 10pA max at TA = +25°C ● LOW OFFSET VOLTAGE: 500µV max ● LOW DISTORTION: 0.0035% typ at 10kHz


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    PDF OPA606 13MHz 10kHz OPA606 LF156A riaa preamplifier circuit diagram phono preamplifier circuit diagram MRD721 bifet differential high accuracy riaa important application of IC 566 lm 1510 monolithic circuit layout motorola automotive power transistor

    Untitled

    Abstract: No abstract text available
    Text: OPA606 Wide-Bandwidth Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 13MHz typ ● OPTOELECTRONICS ● HIGH SLEW RATE: 35V/µs typ ● LOW BIAS CURRENT: 10pA max at TA = +25°C ● LOW OFFSET VOLTAGE: 500µV max ● LOW DISTORTION: 0.0035% typ at 10kHz


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    PDF OPA606 13MHz 10kHz OPA606 LF156A

    riaa preamplifier circuit diagram

    Abstract: phono preamplifier circuit diagram NATIONAL riaa bifet differential OPA606LM high accuracy riaa lm 1510 MRD721 opa606 LF156A
    Text: OPA606 Wide-Bandwidth Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 13MHz typ ● OPTOELECTRONICS ● HIGH SLEW RATE: 35V/µs typ ● LOW BIAS CURRENT: 10pA max at TA = +25°C ● LOW OFFSET VOLTAGE: 500µV max ● LOW DISTORTION: 0.0035% typ at 10kHz


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    PDF OPA606 13MHz 10kHz OPA606 LF156A riaa preamplifier circuit diagram phono preamplifier circuit diagram NATIONAL riaa bifet differential OPA606LM high accuracy riaa lm 1510 MRD721

    Untitled

    Abstract: No abstract text available
    Text: OPA606 Wide-Bandwidth Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 13MHz typ ● OPTOELECTRONICS ● HIGH SLEW RATE: 35V/µs typ ● LOW BIAS CURRENT: 10pA max at TA = +25°C ● LOW OFFSET VOLTAGE: 500µV max ● LOW DISTORTION: 0.0035% typ at 10kHz


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    PDF OPA606 13MHz 10kHz OPA606 LF156A intP/SOIC/SOT-23 OPAMPEVM-SOT23

    HARRIS 5160

    Abstract: HA-5162-5 HA2-5162-5 HA-5162 vertical JFET HA-5160 HA5160 ha j2 HA2-5160-2 HA2-5160-5
    Text: HA-5160, HA-5162 S E M I C O N D U C T O R 100MHz, JFET Input, High Slew Rate, Uncompensated, Operational Amplifiers November 1996 Features Description • Wide Gain Bandwidth AV ≥ 10 . . . . . . . . . . . . 100MHz The HA-5160 is a wideband, uncompensated, operational


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    PDF HA-5160, HA-5162 100MHz, 100MHz HA-5160 300pF HARRIS 5160 HA-5162-5 HA2-5162-5 HA-5162 vertical JFET HA5160 ha j2 HA2-5160-2 HA2-5160-5

    NPD5564

    Abstract: NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638
    Text: Introduction Linear Integrated Systems is a U.S. based, full service semiconductor manufacturer of specialty linear products. Since 1987, we have been supplying pin for pin replacements for over 2000 discrete devices which are currently offered or were discontinued by Calogic, Interfet, Intersil, Micro Power Systems, Motorola, National, Fairchild, Phillips, and SiliconixVishay. We strive to provide our customers with the necessary options, solutions, and technology to produce leadership


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    PDF IntegraU404 LSU405 LSU406 LS841 LS842 LS421 LS422 LS423 LS424 NPD5564 NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638

    E112 jfet

    Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
    Text: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261


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    PDF LS422 LS423 LS424 LS425 LS426 LS832 LS833 LS4391 LS5911 E112 jfet siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565

    MMBD2104

    Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
    Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a


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    PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932

    MMBD2103

    Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


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    PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N

    2N3819 NATIONAL SEMICONDUCTOR

    Abstract: National 2N3819 2n3819 surface mount 2n5951 2N5245 N CHANNEL JFET 2N3819 2N5953 2n4416 national MMBFJ305
    Text: bflE D • bSDllBO □ D 3 cm ci,:i SS7 INSCS NATL SEMICOND DISCRETE TO -52 N Channel DG VP@VDSID m BVqsj Device (V) Min (V) Min Max 2N3819 25 2N4416 30 2.5 im 8 15 2 6 15 RelYfsl NF Re(Yos) Clss Crss (dB)@Rg = 1k (mmho) @ f (limho) @ f Package (PF) (PF)


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    PDF 2N3819 2N4416 PN4416 MMBF4416 2N5245 2N5246 2N5247 2N5397 2N5484 MMBF5484 2N3819 NATIONAL SEMICONDUCTOR National 2N3819 2n3819 surface mount 2n5951 N CHANNEL JFET 2N3819 2N5953 2n4416 national MMBFJ305

    Kt 0936

    Abstract: 2N3819 NATIONAL SEMICONDUCTOR M/Kt 0936 to92 fet p channel National 2N3819 2N3819 MMBF5484 "TO-72 package" ML252 MMBFJ305
    Text: mi-, vni-, urn- Amplifiers 3 3 1 ° - Z TO-52 N Channel • b BVqss Device - ‘ ‘ V) Min ‘ : R elYfk ' <T' Re(Yos) NF Ciss Crss S’* *• :k ^ (jim ho>@ f (d B )@ R g = 1 k -‘f * ' Package (pFj (PF) - 4 0 C '§ M a r .Max (V). ("A ) Min (MHz) Max (MHz*


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    PDF 2N3819 T0-92 2N44-16 PW4416 MMBF441S: O-236* 2N5Z45^ Kt 0936 2N3819 NATIONAL SEMICONDUCTOR M/Kt 0936 to92 fet p channel National 2N3819 2N3819 MMBF5484 "TO-72 package" ML252 MMBFJ305

    A2 5160

    Abstract: A2-5160
    Text: f f l h a r r HA-5160/62 is Wideband, JFET Input High Slew Rate, Uncompensated, Operational Amplifier Features • • • • • • A pplications W id e Gain B an dw id th A V > 1 0 . 10 0M H z High S lew R a t e . 1 20V/|iS


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    PDF HA-5160/62 500ns/Div. A2 5160 A2-5160

    siliconix fet

    Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
    Text: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility


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    PDF J-23548 K24123 i39-40i NZ3766 53-C-03 siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10

    e304 fet

    Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
    Text: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that


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    PDF K28742 44449SILXHX e304 fet JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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