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    2N4401 ITT Price and Stock

    CTS Corporation 532N44015ITT

    TCXO Oscillators 5.0mm x 3.2mm Surface Mount Clipped Sine TCXO, 44.000000MHz, +2.5V, 1.5ppm Stability, -40/+85 C, 1k/reel
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    Mouser Electronics 532N44015ITT
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    CTS Corporation 532N44010ITT

    TCXO Oscillators 5.0mm x 3.2mm Surface Mount Clipped Sine TCXO, 44.000000MHz, +2.5V, 1.0ppm Stability, -40/+85 C, 1k/reel
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 532N44010ITT
    • 1 -
    • 10 -
    • 100 -
    • 1000 $5.88
    • 10000 $5.88
    		Get Quote

    2N4401 ITT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Transistors UMT4401 / SST4401 / MMST4401 /2N4401 NPN Medium Power Transistor Switching I UMT4401 /SST4401 /MMST4401 /2N4401 •Features •E xternal dimensions (Units : mm) 1 ) BV ceo< 40V (lc = 1 m A ) 2 ) Complements the UMT4403/SST4403/MMST4403/PN4403


    OCR Scan     		PDF UMT4401 SST4401 MMST4401 /2N4401 /SST4401 /MMST4401 UMT4403/SST4403/MMST4403/PN4403 T4401

    2N4401 surface mount

    Abstract: 2N4401 transistor 2N4401 NPN Switching Transistor 2N4401 2N4403 2N4401 036
    Text: 2N4401 VISHAY NPN SMALL SIGNAL TRANSISTOR LITEMZI y POWER SEMICONDUCTOR Features • • • • Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages Suitable for Switching and Amplifier Applications Complementary PNP Type Available


    OCR Scan     		PDF 2N4401 2N4403) MIL-STD-202, 2N4401 DS11103 2N4401 surface mount 2N4401 transistor 2N4401 NPN Switching Transistor 2N4403 2N4401 036

    TRANSISTOR 2N 4401

    Abstract: NEC 2N4400 2n4401
    Text: NEC NPN SILICON TRANSISTORS ELECTRON DEVICE 2N4400,2N4401 GENERAL PURPOSE SWITCHING AND AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION 2N4400, 2N4401 are NPN transistors, designed for general purpose switching and amplifier applications, feature injection-molded plastic package for high reliability.


    OCR Scan     		PDF 2N4400 2N4401 2N4400, 2N4401 625mW 300at 150mA 2N4401) 2N4402, 2N4403 TRANSISTOR 2N 4401 NEC 2N4400

    2N4401

    Abstract: No abstract text available
    Text: TOSHIBA 2N4401 Transistor Silicon NPN Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current " Iqev = ^ OOnA Max. , Ig[ry —-100nA (Max.) @ VCE = 35V, VBE = -0.4V • Excellent DC Current Gain Linearity • Low Saturation Voltage


    OCR Scan     		PDF 2N4401 ---100nA 150mA, 2N4403 2N4401

    2N4401 surface mount

    Abstract: 2N4401 NPN Switching Transistor 2N4401 transistor 2N4401 2N4403 NPN switching transistor 2N4403
    Text: 2N4401 NPN SMALL SIGNAL TRANSISTOR Features • • • Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages Suitable for Switching and Amplifier Applications Complementary PNP Type Available 2N4403 H-e-H h -M TO-92


    OCR Scan     		PDF 2N4401 2N4403) MIL-STD-202, 2N4401 DS11103 2N4401 surface mount 2N4401 NPN Switching Transistor 2N4401 transistor 2N4403 NPN switching transistor 2N4403

    Untitled

    Abstract: No abstract text available
    Text: NEW PRO DUCT NEW PRO DUCT 2N4401 SMALL SIGNAL TRANSISTORS NPN FEATURES TO-92 0.181 (4.6) 0.142 (3.6) ♦ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ As complementary type, the PNP transistor 2N4403 is recommended.


    OCR Scan     		PDF 2N4401 2N4403 OT-23 MMBT4401

    transistor 2N4401

    Abstract: 2N4401
    Text: Transistors 2N4401 USHA INDIA LTD GENERAL PURPOSE TRANSISTOR • Colleetor-Emitter Voltage: Veto = 40V • Collector Dissipation: Pc (max)=625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit V cbo 60 40 6 600 V Collector-Base Voltage


    OCR Scan     		PDF 2N4401 625mW 100HA, transistor 2N4401 2N4401

    2N4401 NATIONAL SEMICONDUCTOR

    Abstract: 2N4401
    Text: zn National Jut Semiconductor 2N4401 MMBT4401 T L /G /1 0 1 0 0 -1 NPN General Purpose Amplifier Electrical Characteristics T a = 25°C u n less o therw ise noted Parameter Sym bol Min Max Units OFF CH ARACTERISTICS V BR CEO Collector-Em itter B reakdow n V oltage, (Note 1)


    OCR Scan     		PDF 2N4401 MMBT4401 2N4401 NATIONAL SEMICONDUCTOR

    T147

    Abstract: 3307r schlumberger 2N4896 2N5220 2N4400 2N4401 2N4402 2N4403 FTS04400
    Text: FAIRCHILD SEMICON DUC TO R fi4 DEj34t.Tt.74 0D27Sfll 1 3469674 FAIRCHILD SEMICONDUCTOR „ IDCHILD i, A Schlumberger Company • • • • • 84D 27581 D mmm 2N4400/FTS04400 ' ' - t r - i i 2N4401/FTS04401 Small Signal General Purpose Amplifiers & Switches


    OCR Scan     		PDF D27Sfll 2N4400/FTS04400 2N4401/FTS04401 2N/FTS04401) 2N4402, 2N4403 2N4400 2N4401 FTS04400 T147 3307r schlumberger 2N4896 2N5220 2N4402 2N4403

    Untitled

    Abstract: No abstract text available
    Text: Lead Mounted Transistors NPN Transistors/TO-92 Type Number 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 MPSA05/ITTA05 MPSA06/ITTA06 2N5551 MPSA42 VCEO Volts 25 25 30 40 40 40 60 80 160 300 hpE @ V ce/Ic V/mA 120-360 100-750 350-1400 100-300 100-300 100-300 min. 50


    OCR Scan     		PDF Transistors/TO-92 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 MPSA05/ITTA05 MPSA06/ITTA06 2N5551

    2N3904 pin diagram

    Abstract: ic pin diagram diodes inc 2N5551 2N3906 pin diagram 2N5551 diodes inc BC547 ITTA05 to-92 type 2n5401 2n3904 2N3904
    Text: Lead M ounted Transistors NPN Transistors/TO-92 VCEO Volts 25 25 30 40 40 40 60 80 160 300 Type Number 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 M PS A05/ITTA05 MPSA06/ITTA06 2N5551 MPSA42 hpE @ VCE/IC V/mA 1/2 120-360 10/10 100-750 350-1400 5/1 100-300 10/150


    OCR Scan     		PDF Transistors/TO-92 2N4124 2N5172 N5088 PN2222A 2N3904 2N4401 A05/ITTA05 MPSA06/ITTA06 2N5551 2N3904 pin diagram ic pin diagram diodes inc 2N5551 2N3906 pin diagram 2N5551 diodes inc BC547 ITTA05 to-92 type 2n5401 2n3904

    2N4400

    Abstract: 2n4401 motorola 2n4401
    Text: 2N4400 2N4401* MAXIMUM RATINGS R atin g Sym bol V alu e U n it C o llector-E m itter Voltage VC E O 40 Vdc Collector-Base Voltage v CBO 60 Vdc Em itter-Base Voltage v EBO 6.0 Vdc C ollector C urrent — C ontinuous 'C 600 m Adc Total Device D issipation a T ^ = 25; C


    OCR Scan     		PDF 2N4400 2N4401* O-226AA) 2N4400, 2N4401 2n4401 motorola 2n4401

    PM2907A

    Abstract: PM2907 min60 ITTA05
    Text: IM tkCr LEAD MOUNTED TRANSISTORS NPN TRANSISTORS / TO-92 Type Number ^060 OPERATING/STORAGE TEMPERATURE RANGE -5 5 °C to +150°C hF E VcE' l 0 Volts V/m A max.V mA'mA PN2222A 40 100-300 10/150 1.0 500/50 10<’> 2N3904 40 100-300 1/10 0.3 50/5 50<2> 2N4401


    OCR Scan     		PDF PN2222A 2N3904 2N4401 ITTA05 ITTA06 2N5551 MPSA42 40min. TYTO-92 PM2907A PM2907 min60

    IPS2222A

    Abstract: IPS2907A IPS2907
    Text: DIODES INC 32E D • 20407=13 00DG3bl 1 « D I I LEAD M OUNTED TRANSISTORS -r-z-7-.s NPN T R A N SIST O R S TO-92 PLASTIC C A S E 625 m W @ T l = 25°C 2mm FROM CASE VcEO Type Number Volts 2N3903 2N3904 2N4400 2N4401 IPS2221 IPS2221A IPS2222 IPS2222A 40


    OCR Scan     		PDF 00DG3bl 2N3903 2N3904 2N4400 2N4401 IPS2221 IPS2221A IPS2222 IPS2222A BC558B IPS2907A IPS2907

    2n4401

    Abstract: 2N4400 2N4401 2n4401 equivalent 2n4400 motorola
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA G eneral Purpose Transistors 2N 4400 2N 4401* NPN Silicon ‘ M otorola Preferred D evice COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Symbol Value Unit C ollector-E m itter Voltage Rating VCEO 40 Vdc C ollector-B ase Voltage


    OCR Scan     		PDF 2N4400 2N4401 2n4401 2N4400 2N4401 2n4401 equivalent 2n4400 motorola

    2n4401

    Abstract: 2N4400 2N4401 2N4400 NV25
    Text: 2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Em ltter Voltage: V Ceo ” 40V • Collector Dissipation: Pe max *625mW ABSOLUTE MAXIMUM RATINGS nV»25*C) C haracteristic Collector-Base Voltage Collector-Em itter Voltage


    OCR Scan     		PDF 2N4400/4401 625mW 2N4401 2N4400 100MHz 100MHz 2N4400 2N4401 NV25

    2N4401

    Abstract: 2N4400 2N4401 transistor 2N4401 - TRANSISTOR
    Text: 2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: V c eo = 4 0 V * Collector Dissipation: P c max =625mW TO -92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Em itter Voltage


    OCR Scan     		PDF 2N4400/4401 625mW 100MA, 002S0H6 2N4401 2N4400 2N4401 transistor 2N4401 - TRANSISTOR

    2n4401

    Abstract: TRANSISTOR 2N 4401 "cb it" 4400 transistor transistor 4400
    Text: 2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: Veto=40V • Collector Dissipation: pc max =625mW TO -92 ABSOLUTE MAXIMUM RATINGS (T,=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF 2N4400/4401 625mW 2N4401 lc50mA, 500mA, 100MHz --100MHz 150mA TRANSISTOR 2N 4401 "cb it" 4400 transistor transistor 4400

    TRANSISTOR 2N 4401

    Abstract: 2n4401
    Text: 2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: V c eo = 4 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF 2N4400/4401 625mW 100MHz 100MHz TRANSISTOR 2N 4401 2n4401

    2n4125 equivalent

    Abstract: 2N5089 equivalent 2n4123 equivalent 2N3905 Equivalent 2N3903 2N3904 n4401 2N3906 2N4123 2N4125
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2n4125 equivalent 2N5089 equivalent 2n4123 equivalent 2N3905 Equivalent n4401

    TRANSISTOR 2N 4401

    Abstract: No abstract text available
    Text: 2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Em itter Voltage: VCEo=40V TO-92 • Collector D issipation: P c max =625mW ABSOLUTE MAXIMUM RATINGS (T,=25°C) Characteristic Sym bol Rating Unit Collector-Base Voltage


    OCR Scan     		PDF 2N4400/4401 625mW 002SQ27 00SS02Ã TRANSISTOR 2N 4401

    2n3904 418

    Abstract: 2N3905 Equivalent 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2n3904 418 2N3905 Equivalent

    ERF 2030

    Abstract: HM 1211 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E s a t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 -IN4I48 ERF 2030 HM 1211

    Untitled

    Abstract: No abstract text available
    Text: M AXIMUM RATINGS Symbol Value C o lle ctor-E m itter Voltage Rating v CEO 40 Vdc Collector-Base Voltage v CBO 60 Vdc Em itter-Base Voltage v EBO 6.0 Vdc 'c 600 m Adc Symbol Max Unit Pd 225 mW 1.8 m W:'JC Collector C urrent — C ontinuous Unit MMBT4401LT1*


    OCR Scan     		PDF MMBT4401LT1* OT-23 O-236AB)