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    2N3821 FET Search Results

    2N3821 FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJF0411JPD-00#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0411JPD-01#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0605JPV-00#Q7 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    ISL95901IRZ-T Renesas Electronics Corporation Integrated FET Regulators Visit Renesas Electronics Corporation
    ISL6146DFRZ Renesas Electronics Corporation Low Voltage ORing FET Controller Visit Renesas Electronics Corporation

    2N3821 FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3822

    Abstract: 2N3823 equivalent 2n3823 2N3822 equivalent 2N3821 2N3823 JANTX "Power over Ethernet"
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL J-FET DEPLETION MODE Equivalent to MIL-PRF-19500/375 DEVICES LEVELS 2N3821 2N3822 2N3823 MQ = JAN Equivalent


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    PDF MIL-PRF-19500/375 2N3821 2N3822 2N3823 2N3823 2N3823 equivalent 2N3822 equivalent 2N3823 JANTX "Power over Ethernet"

    2N3823 equivalent

    Abstract: 2N3822 equivalent 2N3822 2N3823 2N3821 2N3823 fet datasheet
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL J-FET DEPLETION MODE Equivalent to MIL-PRF-19500/375 DEVICES LEVELS 2N3821 2N3822 2N3823 MQ = JAN Equivalent


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    PDF MIL-PRF-19500/375 2N3821 2N3822 2N3823 100MHz 200MHz 2N3823 equivalent 2N3822 equivalent 2N3822 2N3823 2N3821 2N3823 fet datasheet

    2N3822

    Abstract: 2N3823 2n3821 2N3823 fet datasheet TO72 package n-channel jfet 2N3822 2N3823 equivalent 2N3821 JANTXV 2N3821 JANTX 2n3821 fet br 6500
    Text: TECHNICAL DATA N-CHANNEL J-FET DEPLETION MODE Qualified per MIL-PRF-19500/375 Devices 2N3821 Qualified Level 2N3822 JANTX JANTXV 2N3823 MAXIMUM RATINGS Parameters / Test Conditions Symbol Gate-Source Voltage Drain-Source Voltage Drain-Gate Voltage Gate Current


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    PDF MIL-PRF-19500/375 2N3821 2N3822 2N3823 O-206AF) Gate-Sour822 2N3822 2N3823 2n3821 2N3823 fet datasheet TO72 package n-channel jfet 2N3822 2N3823 equivalent 2N3821 JANTXV 2N3821 JANTX 2n3821 fet br 6500

    2N3823

    Abstract: 2N3822 2N3821 2N3821 JANTX
    Text: TECHNICAL DATA N-CHANNEL J-FET DEPLETION MODE Qualified per MIL-PRF-19500/375 Devices 2N3821 Qualified Level 2N3822 JANTX JANTXV 2N3823 MAXIMUM RATINGS Parameters / Test Conditions Symbol Gate-Source Voltage Drain-Source Voltage Drain-Gate Voltage Gate Current


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    PDF MIL-PRF-19500/375 2N3821 2N3822 2N3823 2N3822 2N3823 O-206AF) 2N3821 JANTX

    UC734

    Abstract: KE4416 2N3821 2n5103 UC250 Solitron 2N4417
    Text: field effect transistors 160 AMPLIFIERS VHF/UHF J FET/N-CHANNEL,SINGLE TYPE 2N3821 2N3822 2N3823 2N4223 2N4224 2N4416 2N4416A 2N4417 2N5103 2N5104 2N5105 KE4416 UC734 UC734E Vp C ,•• pf Volts Max. Max. *BVGSS Volts PA"CKAGE Min. IGSS nA Max. I DSS rnA


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    PDF 2N3821 2N3822 2N3823 2N4223 2N4224 2N4416 2N4416A 2N4417 2N5103 2N5104 UC734 KE4416 UC250 Solitron 2N4417

    Untitled

    Abstract: No abstract text available
    Text: JANS Program New Product Announcement New England Semiconductor announces its New Line of Junction Field Effect Transistors JFET's These devices will be available as JAN, JANTX, JANTXV as well as commercial. Available families are: MIL-PRF-19500/375 - 2N3821, 2N3822, 2N3823


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    PDF MIL-PRF-19500/375 2N3821, 2N3822, 2N3823 MIL-PRF-19500/385 -2N4856, 2N4857, 2N4858, 2N4860, 2N4861

    TIS34

    Abstract: MPF108 MN2500 MPF106 nf500 MPF-102 ke4416 2n4339 national 2N5485 mpf102
    Text: N-Channel FETs RF amps BVGSS "BVOGO IVI M,n ease Type No. Styl. lOSS ImAI IGSS InAl Max Min Max Yfl I"mhol M,n @ , IMHzl Vploffl IVI Max C,a IpFI Max Gp lelll Min Cra IpFI Max @ , IMHz! NF IdBI @ Max IM~z!@ R""n Iknl Proc. No. 2N3821 TO•72 50 01 05 25 1500


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    PDF 2N3458 2N3469 2N3460 2N3684 2N3685 2N3686 2N3687 2N4338 2N4339 2N4340 TIS34 MPF108 MN2500 MPF106 nf500 MPF-102 ke4416 2n4339 national 2N5485 mpf102

    2N3823

    Abstract: 2N3821UB
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL J-FET DEPLETION MODE


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    PDF MIL-PRF-19500/375 2N3821 2N3822 2N3823 2N3821UB 2N3822UB 2N3823UB 2N3821, 2N3822, 2N3823, 2N3823 2N3821UB

    2N3822 equivalent

    Abstract: transistor 2N3823 2N3822 2N3823 2N3823 equivalent 2N3823 fet datasheet 2n3821 2N382 TO72 package n-channel jfet 2N3822 2n3821 fet
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL J-FET DEPLETION MODE


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    PDF MIL-PRF-19500/375 2N3821 2N3822 2N3823 2N3821UB 2N3822UB 2N3823UB 2N3821, 2N3822, 2N3823, 2N3822 equivalent transistor 2N3823 2N3822 2N3823 2N3823 equivalent 2N3823 fet datasheet 2n3821 2N382 TO72 package n-channel jfet 2N3822 2n3821 fet

    2SK30ATMY

    Abstract: 2SK30ATM Y PN4338 2SK68A-K MPF3822 2SK160A 2SK117Y 2SK514E 2SK30ATM-Y 2SK433
    Text: JUNCTION FET Item Number Part Number Manufacturer g,. V BR GSS VGS(off) Max ( IGSS Max A) Cln Ma~ Toper Max °C) (F) Package Style N-Chann I JFETs, (Cont'd) 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 2N3068A 2N3068A 2N3068A 2SK381 2SK433 KE3687


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    PDF 2N3068A 2SK381 2SK433 KE3687 PN3687 2N3687 2SK30ATMY 2SK30ATM Y PN4338 2SK68A-K MPF3822 2SK160A 2SK117Y 2SK514E 2SK30ATM-Y

    2n3824

    Abstract: 2N3822 2N3824 equivalent 2N3822 MOTOROLA 2N3822 equivalent 2N4220 MOTOROLA 2n3821 2N3621
    Text: MOTOROLA SC XSTRS/R F 12E 0 | fa3fa7a5»4 0Dabbl3 fl | 2N3821, 2N3822 2N3824 CASE 20-03, STYLE 1 TO-72 TO-206AF M AXIM UM RATINGS Symbol Value Drain-Source Voltage VDS 50 Vdc Drain-Gate Voltage Vd g 50 Vdc Gate-Source Voltage Rating Unit Vg S -5 0 Vdc Drain Current


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    PDF 2N3821, 2N3822 2N3824 O-206AF) 2N3821 2N4220 2N3822, 2n3824 2N3824 equivalent 2N3822 MOTOROLA 2N3822 equivalent 2N4220 MOTOROLA 2N3621

    2N5545

    Abstract: 2n3824 2N3821 2N3921 2N3922 2N5547
    Text: -Jolitron I P I M l P Ü K g 'F Ä T T A IU S N IM-CHANNEL JU N C T IO N FET Devices. Inc. CHIP NUMBER m Ai TBT □ CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum .0X7" 0.432mm Backside Contact: 3,000 A Gold • ASSEMBLY RECOMMENDATIONS .016"


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    PDF 432mm) 406mm) 0254mm) 2N5545 2n3824 2N3821 2N3921 2N3922 2N5547

    Untitled

    Abstract: No abstract text available
    Text: Ä 1TM, Q ( N -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum 12,000 .017" i f t l (0.432mm) Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS . 016 " (0.406mm) Die Size- It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2% .


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    PDF 432mm) 406mm) 0254mm) 2N3821 2N3824, 2N3921 2N3922, 2N5545 2N5547

    2n5458N

    Abstract: MPF111 J201-18 2N3821 J202 J203-18 2N3822 2N4220 PN4303 2N4222
    Text: GENERAL G EOM ETRY Section 4 Product Specifications D E V IC E lUT sìgIììì FET Product Specifications (Confd) PURPOSE —I —1 . , X X z z z z z z z z z z z z z z z z ù - o i z z z z z z 'z z X Ii


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    PDF 2N3821 2N3822 2N4220 2N4221 2N4222 2N5457 J271-18 PN4302 PN4302-18 PN4303 2n5458N MPF111 J201-18 J202 J203-18

    FET BFW10

    Abstract: N CHANNEL FET BFW10 BFW10 FET FET BFW11 N CHANNEL FET BFW61 2N2497 2n2386 2N2498 FET BFW61 BFW61
    Text: DU FET's Metal Can ^ For General Purpose Am plifiers Case Outlines I 1 1 For Chopping and Switching C iss Crss io S max. max. off •nA ohms pF pF IDSS min. X a « Typ« No. Case 2N3824 T 072 N 50 0.1 250 6 3 0.1 2N3970 2N3971 2N3972 T018 TOI 8 TOI 8 N N


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    PDF 2N3824 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4391 2N4392 2N4393 FET BFW10 N CHANNEL FET BFW10 BFW10 FET FET BFW11 N CHANNEL FET BFW61 2N2497 2n2386 2N2498 FET BFW61 BFW61

    n-channel fet to-92

    Abstract: 2N4117A fet j310 2N5464 j310 fet 2N5485 FET J202 2N4119 FET 2N5459 2n4117 jan
    Text: 1. DISCRETES Amplifiers— Junction FET Ordering Information Preferred Part Number Bis min Package n mho •g s s Vp m ín/m ax ta s s m in/max mA V max BVq s s min max Crss max n max pA V pF PF n v / s /líz" 4 C |SS N -c h a n n e l: 2N3684 TO-72 2N3685


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    PDF 2N3684 2N3685 2N3686 2N3687 T0-72 2N3821 2N3822 2N3823 n-channel fet to-92 2N4117A fet j310 2N5464 j310 fet 2N5485 FET J202 2N4119 FET 2N5459 2n4117 jan

    F245B

    Abstract: BF256 2N3820 BC264 U1898E BFS21A MPF105 vergleichsliste BF320 TIS69
    Text: FACHHÄNDLER INFORMATION DISKRETE PRODUKTE FETs Warum FET-Vorzugsprodukte? Weil: • 20% unserer Produkte mehr als 80% aller Anforderungen erfüllen. ■ wir unsere Produkte mittels Computer analysiert haben nach: größtem Bedarf notwendigen Parametern niedrigsten Kosten


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    PDF 100-MHz F245B BF256 2N3820 BC264 U1898E BFS21A MPF105 vergleichsliste BF320 TIS69

    FET U310

    Abstract: FET 2N4416 2N2606 2N5397-2N5396 2N5396-2N5397 2N5906 2N3687A 2n4117 jan
    Text: -Jbtttron Devices. Inc mw TO §MUË<gÏÏ \F\W\R IN TRO DUCTIO N TO THE F E T S SDF1001 thru 1006 FOR SWITCHING In most switching applications it is desirable to have a high ON-OFF-ratio. It is also desirable to be able to switch both positive and negative signal voltages over a range as large as


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    PDF SDF1001 2N4391 2N4393 2N4856 2N4861 FET U310 FET 2N4416 2N2606 2N5397-2N5396 2N5396-2N5397 2N5906 2N3687A 2n4117 jan

    E421 fet

    Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
    Text: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.


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    PDF O-72P* O-92X O-105 O-106 O-106P E421 fet equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet

    2N4360

    Abstract: 2N3459 J411 fet Solitron 2N3821 U1898E 2N5906 TIS58 MEM511 2N3920 uc451
    Text: //nlitrnn_ iFia@BOJ Tr ©A'um© mm M O R D E R IN G IN F O R M A T IO N Devices. Inc. l® FOtHL® ItM FO K gir The following is the product code index for J-FET and MOS FET DIE/WAFERS having 2N, 3N IEDEC prefixes. This product code index is Solitron San Diego’s standard for Q . A. production, marketing and sales.


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    PDF MFE2001 MFE2C04 MFE2005 MFE2006 MFE2133 MPF102 MPF108 MPF109 MPF111 MPF112 2N4360 2N3459 J411 fet Solitron 2N3821 U1898E 2N5906 TIS58 MEM511 2N3920 uc451

    j201 jfet

    Abstract: 2N4303 J201 Replacement fet cross reference FET J202 2N4381 2N3966 2N3909 J-FET 2N4393
    Text: Iì ì ì F E T P r o d u c t p e c i f i c GENERAL GEOMETRY Section 4 a t i o n s ( C o n f d ) Product Specifications DEVICE S lUT s ì g PURPOSE —I —1 . , X X z z z z z z z z z z z z z z z z ù - o i z z z z z z 'z z


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    PDF 2N3821 2N3822 2N4220 2N4221 2N4222 2N5457 2N4139 2N3822 2N4861A 2N4861A j201 jfet 2N4303 J201 Replacement fet cross reference FET J202 2N4381 2N3966 2N3909 J-FET 2N4393

    J201 Replacement

    Abstract: fet cross reference 2N3B19 j201 Cross Reference 2n4381 JFET 2N4302 CROSS REFERENCE 2n6661 2N4393 fet 2N4304
    Text: Iì ì ì F E T P r o d u c t p e c i f i c GENERAL GEOMETRY Section 4 a t i o n s ( C o n f d ) Product Specifications DEVICE S lUT s ì g PURPOSE —I —1 . , X X z z z z z z z z z z z z z z z z ù - o i z z z z z z 'z z


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    PDF 2N3821 2N3822 2N4220 2N4221 2N4222 2N5457 2N3955 2N4339 2N5546 J201 Replacement fet cross reference 2N3B19 j201 Cross Reference 2n4381 JFET 2N4302 CROSS REFERENCE 2n6661 2N4393 fet 2N4304

    2N3823

    Abstract: 2N5485 2N3821 2N3822 2N4220 2N4221 2N4222 2N5457 2N5458 2N5459
    Text: T P r o d u c t S p e c i f i c a t i o n s C o n fd lUT sìgIì ì ì F E Product Specifications G E N E R A L PURPOSE DEVICE —I —1 G EO M ETRY (Section 4) . , X X z z z z z z z z z z z z z z z z ù - o i z z z z z z 'z z


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    PDF 2N3821 2N3822 2N4220 2N4221 2N4222 2N5457 2N3823 2N5485 2N5458 2N5459

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680