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    2N3416 TRANSISTOR Search Results

    2N3416 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2N3416 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3417

    Abstract: 2N3416 transistor 2n3416 datasheet CBVK741B019 F63TNR PN100A PN2222N 2n3416 transistor
    Text: 2N3416 / 2N3417 2N3416 2N3417 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings*


    Original     		PDF 2N3416 2N3417 2N3416 PN100A 2N3417 transistor 2n3416 datasheet CBVK741B019 F63TNR PN2222N 2n3416 transistor

    2N3417

    Abstract: No abstract text available
    Text: 2N3416 / 2N3417 2N3416 2N3417 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings*


    Original     		PDF 2N3416 2N3417 2N3416 PN100A 2N3417

    2N3417 equivalent

    Abstract: 2N3417 st 833 2N3416 transistor 2n3416
    Text: ST 2N3416 / 2N3417 NPN Silicon Epitaxial Planar Transistor General Purpose Amplifier For use as general purpose amplifiers and switches requiring collector current to 300 mA. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings* Ta = 25℃


    Original     		PDF 2N3416 2N3417 width300s, 2N3417 equivalent 2N3417 st 833 transistor 2n3416

    transistor 2N3416

    Abstract: 2N3416 2N3417 st 833
    Text: ST 2N3416 / 2N3417 NPN Silicon Epitaxial Planar Transistor General Purpose Amplifier For use as general purpose amplifiers and switches requiring collector current to 300 mA. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings* Ta = 25℃


    Original     		PDF 2N3416 2N3417 width300 transistor 2N3416 2N3417 st 833

    2SC1815 NPN SOT-23

    Abstract: ss8050 sot-23 S8050 npn BC337 2N2907 SOT-23 s9018 to-92 S9014 SOT-23 2SC1008 noise S9014 To39 BC212C
    Text: MCC Small Signal Transistors Small Signal General Purpose Transistors Part No. and Polarity NPN PNP 2N3416 2N3904 2N3906 2N4400 2N4402 2N4401 2N4403 2N5172 2N6727 2SA562 2SA673 2SA673A 2SA733 2SA844 2SA950 2SA1015 2SA1300 2SB892 2SC380TM 2SC945 2SC1008 2SC1213


    Original     		PDF 2N3416 2N3904 2N3906 2N4400 2N4402 2N4401 2N4403 2N5172 2N6727 2SA562 2SC1815 NPN SOT-23 ss8050 sot-23 S8050 npn BC337 2N2907 SOT-23 s9018 to-92 S9014 SOT-23 2SC1008 noise S9014 To39 BC212C

    2N3417

    Abstract: 2N3416 st 833 transistor 2n3416 2n3416 transistor
    Text: ST 2N3416 / 2N3417 NPN Silicon Epitaxial Planar Transistor General Purpose Amplifier For use as general purpose amplifiers and switches requiring collector current to 300 mA. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings* Ta = 25℃


    Original     		PDF 2N3416 2N3417 width300 2N3417 st 833 transistor 2n3416 2n3416 transistor

    2N3415

    Abstract: transistor 2n3415 2N3414 transistor 2n3414 MPS-3417 transistor 2N3416 2n3417 2N3416 NPN Silicon Epitaxial Planar Transistor to92 3414
    Text: 2N3414 2N3415 2N3416 2N3417 MPS3414 MPS3415 MPS3416 MPS3417 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3414, MPS3414 series types are NPN silicon transistors, manufactured by the epitaxial planar process, designed for general


    Original     		PDF 2N3414 2N3415 2N3416 2N3417 MPS3414 MPS3415 MPS3416 MPS3417 2N3414, transistor 2n3415 transistor 2n3414 MPS-3417 transistor 2N3416 2n3417 NPN Silicon Epitaxial Planar Transistor to92 3414

    2n3414

    Abstract: 2N3416
    Text: 2N3414 2N3415 2N3416 2N3417 MPS3414 MPS3415 MPS3416 MPS3417 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3414, MPS3414 series devices are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general


    Original     		PDF 2N3414 2N3415 2N3416 2N3417 MPS3414 MPS3415 MPS3416 MPS3417 2N3414, 2n3414 2N3416

    2N3415

    Abstract: MPS3414 MPS3415 2N3414 2N3416 2N3417 MPS3416 MPS3417 3414 TRANSISTOR 2n3415 transistor
    Text: Datasheet 2N3414 2N3415 2N3416 2N3417 MPS3414 'MPS34.15 MPS3416 MPS3417 NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-92 CASE* M anufacturers of W orld C lass Discrete S em iconductors


    OCR Scan     		PDF 2N3414 MPS3414 2N3415 MPS3415 2N3416 MP53416 2N3417 MPS3417 2N3414, MPS3414 MPS3415 MPS3416 MPS3417 3414 TRANSISTOR 2n3415 transistor

    Untitled

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE. =53 I> • 0504330 000356b 2 ■ AL6R S E M IC O N D S / IC S 93D 03586 PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C 2N3416 2N3417 TP3444


    OCR Scan     		PDF 000356b 2N3416 2N3417 TP3444 TP3564 TP3565 TP3566 TP3567 TP3568 TP3569

    2N3414

    Abstract: 2N3416
    Text: CENTRAL SEMICONDUCTOR t.1 r - Z' f -Z'rX nimfc.3 □□00E54 0 X 2N3A1 sss&isfüieondöetoa' €@rp. Centrai s@mi€@näuetor Corp. Central Semiconductor Corp. Central semiconductor Corp. 5 2N3416 2N3417 JP> NPN Silicon Transistor 145 Adams Avenue Hauppauge, New York 1 1 7 8 8


    OCR Scan     		PDF 2N3414-2N3 2N3414, 2N3416, Vqb-25v CBR30 0000S23 O-105 O-106 2N3414 2N3416

    Untitled

    Abstract: No abstract text available
    Text: CENTRAL t.1 SEMICONDUCTOR X 2N3A1 5 2N3416 2N3417 s @ B n B e o i 989u e t o r Centres! s @ m i € @ n ä u e t o r Corp. Central S e m i c o n d u c t o r Corp. Central semiconductor Corp. NPN Silicon T r a n s i s t o r 145 Adams Avenue Hauppauge, New York 1 1 7 8 8


    OCR Scan     		PDF 2N3416 2N3417 2N3414, CBR10Series, CBR25Ser/es CBR12 CBR30 O-105 O-106

    "to-98" package

    Abstract: 2N3415 2n3416 2n3417
    Text: G E SOLID STATE 3875081 ~ 01 G E S O L I D STATE DE | BÖ7S0Ö1 □□IVTIS T 01E 17915 D Signal Transistors 2N3414-17, GES3414-17 - r a Silicon Transistors TO-92 TO-98 The GE/RCA Types 2N3414-17and GES3414-17 are planar epitaxial passivated NPN silicon transistors Intended for


    OCR Scan     		PDF 2N3414-17, GES3414-17 2N3414-17and GES3414-17 GES3414-17) 2N3414-17) 2N3414 2N3416 "to-98" package 2N3415 2n3416 2n3417

    2N2219 transistor substitute

    Abstract: 2N3416 equivalent D33025 2N2222 npn small signal current gain 2N2222 chip 1n3600 chip 2n8004 diode 2N5815 2N3856 2NS007
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


    OCR Scan     		PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N2219 transistor substitute 2N3416 equivalent D33025 2N2222 npn small signal current gain 2N2222 chip 1n3600 chip 2n8004 diode 2N5815 2N3856 2NS007

    2N3402

    Abstract: 2n3404 2N3405 2N3403 2N3638 N3404 2N2711 2N2712 2N2713 2N2714
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (SAT) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘


    OCR Scan     		PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3402 2n3404 2N3405 2N3403 2N3638 N3404

    2n3391a

    Abstract: No abstract text available
    Text: NPN Transistors bSDllBD uctor Discrete POWER & Signal Technologies " NPN General Purpose Amplifiers and Switches OOHÜMbl 2fil I to Device No. Case Style 2N3390 VCBO V CEO ^EBO V Min (V) Min (V) Min TO-92 (94) 25 25 2N3391A TO-92 (94) 25 2N3392 TO-92 (94)


    OCR Scan     		PDF 2N3390 2N3391A 2N3392 2N3393 2N3415 2N3416 2N3417 2N3704 2N5172 IVPS8098

    Untitled

    Abstract: No abstract text available
    Text: This NPN Transistors Material Ln a feH fcH UJ a Copyrighted tr a Discrete POWER & Signal Technologies National S e m i c o n d u c t o r f a -c o jr " i NPN General Purpose Amplifiers and Switches VCB0 VCEO ^EBO ^BE SAT 'c (V) @ (V) & Max Min Max (mA) VCE(SAT)


    OCR Scan     		PDF 0040Mbl

    d33025

    Abstract: 2n3960a 2N6004 D33030 2n2926 2N8004 2N6002 CET708 2N6006 2N6015
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


    OCR Scan     		PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 d33025 2n3960a 2N6004 D33030 2n2926 2N8004 2N6002 2N6006 2N6015

    A2 zener diode

    Abstract: diode ZENER A1 to-226aa to226aa ZENER DIODE 1n5240 DIODE 827 ZENER 1N5242 1N414* zener 2n2222 transistor pin b c e ZENER 1n5232
    Text: DISCRETE SEMICONDUCTORS I N D E X A N D C R O S S REFERENCE Industry Number Type Allegro Number s Allegro Package TO-236AB TO-236AB TO-236AB 1N914 Diode TMPD914 1N4148 1N5230 1N5231 1N5232 Diode Zener Zener Zener TMPD4148 TMPZ5230 TMPZ5231 TMPZ5232 1N5234


    OCR Scan     		PDF 1N914 1N4148 1N5230 1N5231 1N5232 1N5234 1N5236 1N5237 1N5239 1N5240 A2 zener diode diode ZENER A1 to-226aa to226aa ZENER DIODE 1n5240 DIODE 827 ZENER 1N5242 1N414* zener 2n2222 transistor pin b c e ZENER 1n5232

    2N3417 equivalent

    Abstract: 2N2221-2N2222 2N2222A npn transistor transistor 2n5174 IC TC 3588 beta transistor 2N2222 1n9148 2N4424 2N4424 equivalent 2N3416 equivalent
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA rap GET706 GET708 to GET914 GET3013 GET3646 HPH : 2N6000 2N60Q2 2N6001 2N6S03 75mA 75mA t] 800mA PNP NPN pnp GET3014 GET3S3B GET3638A GET3638 GET3638A


    OCR Scan     		PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N3417 equivalent 2N2221-2N2222 2N2222A npn transistor transistor 2n5174 IC TC 3588 beta transistor 2N2222 1n9148 2N4424 2N4424 equivalent 2N3416 equivalent

    beta transistor 2N2222

    Abstract: 1N4532 1n9148 2N2926 equivalent 2n RF transistor 2N5249 2N6006 DIODE 1N3605 2N4424 equivalent 2N6002
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 GET3S3B GET3638A 2NSOOO 2N6001 2N6003 2N6000 2N6002 2N60D2 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003


    OCR Scan     		PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 beta transistor 2N2222 1N4532 1n9148 2N2926 equivalent 2n RF transistor 2N5249 2N6006 DIODE 1N3605 2N4424 equivalent 2N6002

    BC5468

    Abstract: T1S98 T1S99 NPN T1S98 8C546 bc174b 2N3859A 2SC2002 BC337A BC445A
    Text: PLASTIC PACKAGE TRANSISTORS NPN Maximum Ratings Type No. BC174B BC546 VC80 vCEO VEBO 'CBO (V) Min (V) Min (V) Min (UA) Max 80 65 6 80 BC546A Electrical Characteristics 80 65 65 ® hFE ^CB (V) 6 Min Max 180 460 110 6 450 220 'c & VCE VCE(Sal) iV BE(Sal) ®


    OCR Scan     		PDF BC174B O-92-4 BC546 BC546A CSC1008Y PN2484 T1S98 BC5468 T1S98 T1S99 NPN T1S98 8C546 2N3859A 2SC2002 BC337A BC445A

    T1S98

    Abstract: T1S99 NPN T1S98 CSC1008 2N3858A 2N3859A BC174B BC337A BC445A BC546
    Text: PLASTIC PACKAGE TRANSISTORS NPN Maximum Ratings Type No. BC174B BC546 BC546A Electrical Characteristics VC80 v CEO M (V) (V) 'CBO (uA) Mn Min Min Max SO 65 6 80 80 65 65 V EBO ® hFE ^C B 'c & vCE (mA) (V) 6 Min Max 180 460 110 6 BO 65 2.00 450 2.00 220


    OCR Scan     		PDF BC174B O-92-4 BC546 BC546A 1008R CSC1008Y PN2484 T1S98 T1S98 T1S99 NPN T1S98 CSC1008 2N3858A 2N3859A BC337A BC445A

    Untitled

    Abstract: No abstract text available
    Text: NPN TRANSISTORS T O -9 2 /T O -2 2 6 A A ‘2N ’ and ‘T F DEVICE TYPES ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain *cao V C E fu t », Ic Device Max. Type mA) v V (8 R )C 6 0 V * (BR)EBO Max. (V) (V) (V) (nA) @ v CB (V) hFE hfE @ lc Min. Max. (m A)


    OCR Scan     		PDF TP918 TP2221 TP2221A TP2222 TP2222A 2N3414 2N3415 2N3416 2N3417 2N3904