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    2n3414

    Abstract: 2N3416
    Text: 2N3414 2N3415 2N3416 2N3417 MPS3414 MPS3415 MPS3416 MPS3417 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3414, MPS3414 series devices are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general


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    PDF 2N3414 2N3415 2N3416 2N3417 MPS3414 MPS3415 MPS3416 MPS3417 2N3414, 2n3414 2N3416

    2N3415

    Abstract: transistor 2n3415 2N3414 transistor 2n3414 MPS-3417 transistor 2N3416 2n3417 2N3416 NPN Silicon Epitaxial Planar Transistor to92 3414
    Text: 2N3414 2N3415 2N3416 2N3417 MPS3414 MPS3415 MPS3416 MPS3417 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3414, MPS3414 series types are NPN silicon transistors, manufactured by the epitaxial planar process, designed for general


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    PDF 2N3414 2N3415 2N3416 2N3417 MPS3414 MPS3415 MPS3416 MPS3417 2N3414, transistor 2n3415 transistor 2n3414 MPS-3417 transistor 2N3416 2n3417 NPN Silicon Epitaxial Planar Transistor to92 3414

    BC335

    Abstract: MPS005 CS9013 BC333 BC358 TMPT1009F3 LOW-POWER SILICON NPN 2SC403 2S060 2S0638
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 MMBC1009F3 2SC403 2N5810 GES5810 TP5810 2S0638 2S0400 CS9013 2N703 2N3241 ~~~~~~ 15 20 MPS3402 MPS3402 MPS3403 MPS3403 MPS3414 MPS3414 2N3402 2N3414 §E~~414 25 30 35 40 45 50 55 60 TMPT1009F2 2SC371 MPS005


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    PDF MMBC1009F3 2SC403 2N5810 GES5810 TP5810 2S0638 2S0400 CS9013 2N703 2N3241 BC335 MPS005 BC333 BC358 TMPT1009F3 LOW-POWER SILICON NPN 2S060

    2N3414

    Abstract: 04bc hFE-75 transistor
    Text: 2N3414 NPN SILICON TRANSISTOR DESCRIPTION 2N3414 is NPN silicon transistor designed for general purpose AF medium power applications. 04.68 0.18 TO-92B 4.6 (0.18) 3.58 (0.14) B c e\ 0.4 J(0.016) n 2.54 10° — 0.51 "(0 .02) 12.7 (0-5) min. ( 0 . 1) Bottom view


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    PDF 2N3414 O-92B 360mW 04bc hFE-75 transistor

    "to-98" package

    Abstract: 2N3415 2n3416 2n3417
    Text: G E SOLID STATE 3875081 ~ 01 G E S O L I D STATE DE | BÖ7S0Ö1 □□IVTIS T 01E 17915 D Signal Transistors 2N3414-17, GES3414-17 - r a Silicon Transistors TO-92 TO-98 The GE/RCA Types 2N3414-17and GES3414-17 are planar epitaxial passivated NPN silicon transistors Intended for


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    PDF 2N3414-17, GES3414-17 2N3414-17and GES3414-17 GES3414-17) 2N3414-17) 2N3414 2N3416 "to-98" package 2N3415 2n3416 2n3417

    92C3-427S0

    Abstract: 42766 2N3414 GE 2N3414 2n3417 output admittance hoe 2N3416 GES3414 GES3416 X10-3 2n3414-17
    Text: G E SO LID S T A T E ~ 01 3 875 081 G E S O L I D S T A T E DE§3fl750ñl □□IVTIS T 01E D 17915 Signal Transistors 2N3414-17, GES3414-17 T a ? - / ? Silicon IVansistors TO-92 TO-98 The GE/RCA Types 2N3414-17and GES3414-17 are planar epitaxial passivated NPN silicon transistors Intended for


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    PDF 2N3414-17, GES3414-17 2N3414-17 GES3414-17 GES3414-17) 2N3414-17) 2N3414 2N3416 GES3414 GES3416 92C3-427S0 42766 2N3414 GE 2n3417 output admittance hoe X10-3

    Untitled

    Abstract: No abstract text available
    Text: / o z o Ë I— O LU DESCRIPTION 2N3414 is NPN silicon transistor designed for general purpose AF medium power applications. ~ "j 04.68 (0.18) j" TO-92B T 4.6 (0.18) -• - (0.14) 0.51 12.7 (0.5) min. (0 .02 ) Bottom view Unit: mm(inch) ii ABSOLUTE MAXIMUM RATINGS


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    PDF 2N3414 O-92B 500mA 360mW 10reakdown 10jjA

    NPN transistor ECB TO-92

    Abstract: 2N3414 0181 ecb
    Text: NPN SILICON TRANSISTOR DESCRIPTION 2N3414 is NPN silicon transistor designed for general purpose AF medium power applications. TO-92 ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Operating & Storage Junction Temperature


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    PDF 2N3414 500mA 100jiA 10fiA NPN transistor ECB TO-92 0181 ecb

    2N3415

    Abstract: MPS3414 MPS3415 2N3414 2N3416 2N3417 MPS3416 MPS3417 3414 TRANSISTOR 2n3415 transistor
    Text: Datasheet 2N3414 2N3415 2N3416 2N3417 MPS3414 'MPS34.15 MPS3416 MPS3417 NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-92 CASE* M anufacturers of W orld C lass Discrete S em iconductors


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    PDF 2N3414 MPS3414 2N3415 MPS3415 2N3416 MP53416 2N3417 MPS3417 2N3414, MPS3414 MPS3415 MPS3416 MPS3417 3414 TRANSISTOR 2n3415 transistor

    2N2926 equivalent

    Abstract: beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


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    PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N2926 equivalent beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent

    2N3414

    Abstract: 2N3416
    Text: CENTRAL SEMICONDUCTOR t.1 r - Z' f -Z'rX nimfc.3 □□00E54 0 X 2N3A1 sss&isfüieondöetoa' €@rp. Centrai s@mi€@näuetor Corp. Central Semiconductor Corp. Central semiconductor Corp. 5 2N3416 2N3417 JP> NPN Silicon Transistor 145 Adams Avenue Hauppauge, New York 1 1 7 8 8


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    PDF 2N3414-2N3 2N3414, 2N3416, Vqb-25v CBR30 0000S23 O-105 O-106 2N3414 2N3416

    2N2219 transistor substitute

    Abstract: 2N3416 equivalent D33025 2N2222 npn small signal current gain 2N2222 chip 1n3600 chip 2n8004 diode 2N5815 2N3856 2NS007
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


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    PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N2219 transistor substitute 2N3416 equivalent D33025 2N2222 npn small signal current gain 2N2222 chip 1n3600 chip 2n8004 diode 2N5815 2N3856 2NS007

    2N3402

    Abstract: 2n3404 2N3405 2N3403 2N3638 N3404 2N2711 2N2712 2N2713 2N2714
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (SAT) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘


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    PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3402 2n3404 2N3405 2N3403 2N3638 N3404

    Untitled

    Abstract: No abstract text available
    Text: CENTRAL t.1 SEMICONDUCTOR X 2N3A1 5 2N3416 2N3417 s @ B n B e o i 989u e t o r Centres! s @ m i € @ n ä u e t o r Corp. Central S e m i c o n d u c t o r Corp. Central semiconductor Corp. NPN Silicon T r a n s i s t o r 145 Adams Avenue Hauppauge, New York 1 1 7 8 8


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    PDF 2N3416 2N3417 2N3414, CBR10Series, CBR25Ser/es CBR12 CBR30 O-105 O-106

    d33025

    Abstract: 2n3960a 2N6004 D33030 2n2926 2N8004 2N6002 CET708 2N6006 2N6015
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


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    PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 d33025 2n3960a 2N6004 D33030 2n2926 2N8004 2N6002 2N6006 2N6015

    2N3417 equivalent

    Abstract: 2N2221-2N2222 2N2222A npn transistor transistor 2n5174 IC TC 3588 beta transistor 2N2222 1n9148 2N4424 2N4424 equivalent 2N3416 equivalent
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA rap GET706 GET708 to GET914 GET3013 GET3646 HPH : 2N6000 2N60Q2 2N6001 2N6S03 75mA 75mA t] 800mA PNP NPN pnp GET3014 GET3S3B GET3638A GET3638 GET3638A


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    PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N3417 equivalent 2N2221-2N2222 2N2222A npn transistor transistor 2n5174 IC TC 3588 beta transistor 2N2222 1n9148 2N4424 2N4424 equivalent 2N3416 equivalent

    beta transistor 2N2222

    Abstract: 1N4532 1n9148 2N2926 equivalent 2n RF transistor 2N5249 2N6006 DIODE 1N3605 2N4424 equivalent 2N6002
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 GET3S3B GET3638A 2NSOOO 2N6001 2N6003 2N6000 2N6002 2N60D2 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003


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    PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 beta transistor 2N2222 1N4532 1n9148 2N2926 equivalent 2n RF transistor 2N5249 2N6006 DIODE 1N3605 2N4424 equivalent 2N6002

    PNP Transistor 2N2222 equivalent

    Abstract: DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent 2N2222 npn small signal current gain 2N2222 chip DIODE 1N9148 transistor npn high speed switching
    Text: SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification Sheet No. 1 35.90 1N914B M46P-X510


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    PDF 1N914 1N914A 1N914B M46P-X510 1N3064 M46P-X507 1N3600 1N3605 M46P-X516 1N4150 PNP Transistor 2N2222 equivalent DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent 2N2222 npn small signal current gain 2N2222 chip DIODE 1N9148 transistor npn high speed switching

    2N2924

    Abstract: 2N3856 2N3404 2N2712 2N2714 2N3856A 2n2923 2N3405 n3860 2N2711
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C KA G E b v CEO Device Type @ 10mA V 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390 2N3391 NPN NPN NPN NPN NPN 2N3391A 2N3392 2N3393 2N3394


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    PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3856 2N3404 2N3856A 2N3405 n3860

    2N3405

    Abstract: transistors equivalent AP 3706 P mps3702 MPS3704 equivalent T0-92B transistors mps3704 2N3404 2n3402
    Text: 2N3702 trough 2N 3706 MPS 3702 through MPS 3706 I PNP . NPN SILICON GENERAL PURPOSE AP TRANSISTORS THE ABOVE TYPES ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AP MEDIUM POWER APPLICATIONS. THE 2N3702 SERIES ARE SUPPLIED IN CASE TO-92B. THE MPS3702 SERIES ARE SUPPLIED IN


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    PDF 2N3702 O-92B. MPS3702 T0-92A. T0-92B T0-92A 2N/MPS3702 2N/MPS3703 360mW 2N3405 transistors equivalent AP 3706 P MPS3704 equivalent T0-92B transistors mps3704 2N3404 2n3402

    D29A5

    Abstract: 2N5381 transistor 3405 npn 2N5383 D29A4 2N4425 2N2713 2N5380 2N5368 2N5371
    Text: SPRAGUE Econoline P la stic -M o ld e d Silicon SEPT" Transistors Type No. P O L A R IT Y GENERAL-PURPOSE AMPLIFIERS/SWITCHES D -C C U R R E N T G A IN h FE PD Ta = 25 C (mW) V (BR) CBO V olts V (BR) CEO Vo lts V (BR) EBO Vo lts ICBO mA Cond tions Max. lc


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    PDF 2N5368 2N5370 2N5371 2N5372 2N5373 2N4954 2N5418 2N5419 D29A4 D29A5 2N5381 transistor 3405 npn 2N5383 2N4425 2N2713 2N5380

    2N3638A

    Abstract: 2N3638 2N3856 2N5815 d33025 2N6000 2N4424 2N6002 GET3013 GET3638
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pnp GET3014 GET3S3B GET3638A GET3638 GET3638A


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    PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N3638A 2N3638 2N3856 2N5815 d33025 2N6000 2N4424 2N6002 GET3638

    n3860

    Abstract: 2N2713 2N292 2N2925 2N2711 2N2712 2N2714 2N2923 2N2924 2N2926
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390 2N3391 NPN NPN NPN NPN NPN 2N3391A 2N3392 2N3393 2N3394


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    PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 n3860 2N292

    2N6004

    Abstract: 2n3960a 2N3856 d33025 2N4424 2n8004 2N6000 2N6016 2N3856A 2N6015
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


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    PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N6004 2n3960a 2N3856 d33025 2N4424 2n8004 2N6000 2N6016 2N3856A 2N6015