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    2N24 Search Results

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    Susumu Co Ltd RG2012N-2490-B-T5

    RES SMD 249 OHM 0.1% 1/8W 0805
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    DigiKey RG2012N-2490-B-T5 Cut Tape 4,174 1
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    Susumu Co Ltd RG2012N-244-W-T1

    RES SMD 240K OHM 0.05% 1/8W 0805
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    DigiKey RG2012N-244-W-T1 Digi-Reel 2,878 1
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    Susumu Co Ltd RG2012N-242-W-T1

    RES SMD 2.4K OHM 0.05% 1/8W 0805
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    DigiKey RG2012N-242-W-T1 Digi-Reel 1,965 1
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    Kyocera AVX Components LP0402N2484ANTR-500

    RF FILTER LOW PASS 2.484GHZ 0402
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    LP0402N2484ANTR-500 Reel 1,000 500
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    Walsin Technology Corporation 0402N240J500CT

    CAP CER 24PF 50V C0G/NP0 0402
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    Newark 0402N240J500CT Cut Tape 968 10
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    TME 0402N240J500CT 10,000
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    2N24 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N24 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N24 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N24 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2N24 Unknown Shortform Transistor Datasheet Guide Short Form PDF
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    2N24 Unknown GE Transistor Specifications Scan PDF
    2N240 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N240 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N240 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N240 Unknown Vintage Transistor Datasheets Scan PDF
    2N240 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N240 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N240 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N240 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N240 Unknown GE Transistor Specifications Scan PDF
    2N240 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N240 Sprague Semiconductor Data Book 1977 Scan PDF
    2N2400 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N2400 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N2400 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    ...

    2N24 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N2484UA

    Abstract: 2N2484 2N2484UB 50VDC 2N2484UBC
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/376 DEVICES LEVELS 2N2484UA 2N2484UB 2N2484UBC * JAN


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    PDF MIL-PRF-19500/376 2N2484UA 2N2484UB 2N2484UBC 500Adc, 30MHz 100kHz T4-LDS-0058 2N2484UA 2N2484 2N2484UB 50VDC 2N2484UBC

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N2484 TO-18 This transistors is primarily intended for use in high performance, low level,


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    PDF 2N2484 C-120

    2N2484

    Abstract: 2N2484J 2N2484JS 2N2484JV 2N2484JX
    Text: 2N2484 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2484J • JANTX level (2N2484JX)


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    PDF 2N2484 MIL-PRF-19500 2N2484J) 2N2484JX) 2N2484JV) 2N2484JS) MIL-STD-750 MIL-PRF-19500/376 8x10-4 2N2484 2N2484J 2N2484JS 2N2484JV 2N2484JX

    2N2484

    Abstract: Transistor 2N2484
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N2484 TO-18 This transistors is primarily intended for use in high performance, low level, low noise amplifier applications ABSOLUTE MAXIMUM RATINGS


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    PDF 2N2484 C-120 2N2484 Transistor 2N2484

    2N2484 motorola

    Abstract: MP024 2N2483 2N2484 MPQ2483 MPQ2484 MP02483
    Text: QUAD DUAL IN-LINE NPN SILICON MATCHED AMPLIFIER TRANSISTORS . designed for low-level, high-gain amplifier applications. @ Low Noise Figure – @ Ic = 10pAdc NE = 3.0 dB Typ – MPQ2483 = 2.0 dB (Typ) – MPQ2484 @ Transistor Similar @ Compact Size to 2N2483


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    PDF 10pAdc MPQ2483 MPQ2484 2N2483 2N2484 MPQ2483, MPQ2483-1, MPQ2483-2 MPQ2484, MPQ2484-I 2N2484 motorola MP024 2N2483 2N2484 MPQ2483 MPQ2484 MP02483

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 2N2417 - 2N2422, A, B SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Power dissipation 1 RMS emitter current Peak pulse emitter current Symbol Value Unit PD 350 mW IE 70 mA ie 2 Amps Emitter reverse voltage VB2E 60 Volts Interbase voltage


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    PDF 2N2417 2N2422, 33mW/Â 2N2646, 2N2647 MIL-PRF-19500,

    Untitled

    Abstract: No abstract text available
    Text: 2N2484 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2484J • JANTX level (2N2484JX)


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    PDF 2N2484 MIL-PRF-19500 2N2484J) 2N2484JX) 2N2484JV) 2N2484JS) MIL-STD-750 MIL-PRF-19500/376 8x10-4

    2SC1766C

    Abstract: BFY16 2SC1335 DIODE 10N 40D 2SC306 2N2161 2N2210 2N1410A 2N1410 2N2197 semelab
    Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 30 40 50 60 ~~g~~! ~olid§tlnc ~g ~gg~ ~g ~gg~ 25 25 25 30 30 30 35 35 100m 100m 100m 100m 600m 1.0 400m 400m 2SC394 2SC394 2SC394 PET8005 2N2410 BSS41 2N3973 2N3975 BC125B BC387 BFW32 HSE133


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    PDF 2SC1766A 2SC1766B 2SC1766C 2SC1766D MM1941 MPS6512 MPS6513 TP5377 TP5376 HSE144 BFY16 2SC1335 DIODE 10N 40D 2SC306 2N2161 2N2210 2N1410A 2N1410 2N2197 semelab

    2N2484ADCSM

    Abstract: No abstract text available
    Text: 2N2484ADCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15


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    PDF 2N2484ADCSM MO-041BB) 2-Aug-02 2N2484ADCSM

    140M

    Abstract: 2N2412BX
    Text: 2N2412BX Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 20V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products


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    PDF 2N2412BX O206AA) 5/50u 2-Aug-02 140M 2N2412BX

    2N2432 JANTXV

    Abstract: 2N2432
    Text: 2N2432 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 30V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products


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    PDF 2N2432 O206AA) 2-Aug-02 2N2432 JANTXV 2N2432

    cczl

    Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
    Text: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL


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    PDF QML-9500-19 1N1124A 1N3768 1N3821A 1N4562B 1N4565A 1N5819-1 1N5822 1N6761 1N6761-1 cczl 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251

    2N2498

    Abstract: No abstract text available
    Text: 2N2498 Transistors P-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)20 I(D) Max. (A) I(G) Max. (A)10m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)200þ I(GSS) Max. (A)10u @V(GS) (V) (Test Condition)10 V(GS)off Min. (V) I(DSS) Max. (A)


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    PDF 2N2498

    Untitled

    Abstract: No abstract text available
    Text: 2N2485 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)8.8# Maximum Operating Temp (øC)200þ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)120 h(FE) Min. Current gain.10 h(FE) Max. Current gain.


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    PDF 2N2485 Freq100M Code3-12

    2N3051

    Abstract: 2N3050 2N2412 2n3049
    Text: TYPES 2N3049, 2N3050, 2N3051 DUAL P-N-P SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 7 4 2 3 0 , A U G U S T 1 9 6 3 - R E V I S E D A P H IL 1 96 7 DESIGNED FOR DIFFERENTIAL AMPLIFIERS, LOW-NOISE AMPLIFIERS, AND LOW-LEVEL SWITCHING • Each Triode Electrically Similar to 2N2411 and 2N2412 Transistors


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    PDF 2N3049, 2N3050, 2N3051 2N2411 2N2412 2N3050 2n3049

    2n2432a

    Abstract: 2n2432
    Text: TYPES 2N2432, 2N2432A. ü4 « N-P-N SILICON TRANSISTORS B U L L E T IN NO. DL-S 6 8 9 0 7 9 , O C T O B E R 1 9 6 6 - R E V I S E D J A N U A R Y 1 9 6 8 FOR LOW-LEVEL, HIGH-SPEED CHOPPER APPLICATIONS IN INVERTED CONNECTION • Low Offset Voltage. . 0.4 mV Max 2N2432A


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    PDF 2N2432, 2N2432A. 2N2432A) 2N2432 2N2432A 2N4138

    2n243

    Abstract: 2N244 transistor all
    Text: TYPES 2N243, 2N244 N-P-N GROW N-JUNCTIO N SILICON TRANSISTORS B U L L E T I N NO. DL-S 6 1 2 2 3 8 , D E C E M B E R 1 9 6 1 Oval Welded Package mechanical data The transistor is in an oval w elded p ackag e with glass-to-metal hermetic seal between case an d leads.


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    PDF 2N243, 2N244 2n243 transistor all

    2n3904 2n3906

    Abstract: bcy71 ALTERNATIVE 2N3904 geometry 2n3251a THC3251A
    Text: BIPOLAR TRANSISTORS AND GEOMETRIES ELECTRICAL CHARACTERISTICS at TA = + 25°C *CBO 'c Max. v * BRJCBO Polarity (mA (V) Allegro Type V (V) Max. V Ib (V) (nA) (V) @ v rr 00 2N2222A THC2222A NPN 800 75 40 6.0 10 60 10 3.0 2N2484 THC2484 NPN 50 60 60 6.0


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    PDF 2N2222A 2N2484 2N2907A 2N3251A 2N3904 2N3906 2N4401 2N4403 BC847C BCY71 2n3904 2n3906 bcy71 ALTERNATIVE 2N3904 geometry THC3251A

    2n2405

    Abstract: 2N1893
    Text: 4302271 üün7ô3 4 HHAS P o w e r Tran sistors File N u m b e r 34 Medium-Power Silicon N-P-N Planar Transistors 2N1893, 2N2405 I ' 3 3 - 0 5 TERMINAL DESIGNATIONS For S m a ll-S ig n a l A p p lic a tio n s In In d u strial and C o m m e rc ia l E q u ip m e n t


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    PDF 2N1893, 2N2405 2N1893 2N2405* 2N2405. 10VOLTS 2n2405

    2N2483

    Abstract: 2N2484 2N2586 2N2897 2N3117 2N3647 2N3700 2N6430 2N706 2N706A
    Text: Maximum Ratings Type No. 2N2483 VC0O V Min ^CEO ^EBO (V) Min (V) Min 60 60 6 Po (W) Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) (A) ^CM 'cBO ^C B (A) (PA) Max e (V) 0.01 45 Tc=25°c 0.36 0.05 ^CES ^CE "re @ 'c & (mA) (MA) 0 (V) Max


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    PDF 2N2483 2N2484 2N718A 2N720 2N720A 2N834 2N910 2N911 2N2586 2N2897 2N3117 2N3647 2N3700 2N6430 2N706 2N706A

    Fairchild, 2N3019

    Abstract: 2N3906 NPN Fairchild DN2222A transistor 2N2359A fairchild 2n3019 2n2222a fairchild DN3904 2N2907 NPN Transistor 2n3904 npn fairchild 2N3904 NPN Transistor
    Text: FAIRCHILD TRANSISTORS SMALL SIGNAL NPN AND PNP TRANSISTOR DICE BY APPLICATION Item DEVICE NO. Basic VcEO 'CBO @ VcB hFE @ ic V V Standard nA mA Pol. Device Min Max Min/Max 1 DN2484 NPN 2N2484 60 20 45 250/100/450 2 DN3962 PNP 2N3962 60 20 50 3 DN918 NPN


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    PDF DN2484 2N2484 DN3962 2N3962 11x24 DN918 2N918 DN3904 2N3904 11x18 Fairchild, 2N3019 2N3906 NPN Fairchild DN2222A transistor 2N2359A fairchild 2n3019 2n2222a fairchild 2N2907 NPN Transistor 2n3904 npn fairchild 2N3904 NPN Transistor

    2N2919

    Abstract: 2N2642
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 JEt 7 DEVICE TYPE 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2652 2N2652A 2N2721 2N2722 2N2903 2N2915 2N2916 2N2917 2N2918 2N2919 2N2920


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    PDF 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2919

    Untitled

    Abstract: No abstract text available
    Text: LIE » N AUER PHILIPS/DISCRETE • bbS3^3i □□eaioi Tb7 l IAPX 2N2483 2N2484 SILICON PLANAR TRANSISTORS N-P-N transistors in TO-18 metal envelopes with the collector connected to the case. These transistors are primarily intended for use in high performance, low-level, low-noise amplifier


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    PDF 2N2483 2N2484 10kJ2

    2N2422

    Abstract: No abstract text available
    Text: 2N2422 SILICON PN UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N2422 is a Unijunction Transistor, Designed for General Purpose Pulse, Timing, Sense and T rigger Applications. PACKAGE STYLE TO-18 MOD MAXIMUM RATINGS 2.0 A (PULSED) m 60 V o V Ic Pd is s 360 mW @ Te $ 25 °C


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    PDF 2N2422 2N2422