TRANSISTOR DATASHEET D1555
Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440
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2N109
2N1304
2N1305
2N1307
2N1613
2N1711
2N1893
2N2102
2N2148
2N2165
TRANSISTOR DATASHEET D1555
d1555 transistor
TRANSISTOR D1651
D1555
D1557
D1554
d1651
transistor s1854
transistor d1555
transistor d1878
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2N2222B
Abstract: 2N2244 2N1104 NB311E Delco LOW-POWER SILICON NPN 2sc1449 BC175 2sc1571 2N2362
Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 fT Hz 35 35 35 35 35 35 35 35 35 35 30 30 30 30 30 30 30 30 35 40 180M 60M 150M 150M 20M 20M 20M 20M 300M 20M 35 35 35 35 35 35 35 35 35 40 40 40 40 40 40 40 50 50 100M 2N337A
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2SCS02
BFY50
BFX50
NB311E
NB311F
NB311X
NB311Y
TP5189
2N1104
2N2222B
2N2244
Delco
LOW-POWER SILICON NPN
2sc1449
BC175
2sc1571
2N2362
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2N2222B
Abstract: 2N2280 2N2307 BSY87 2SC696 Elcoma 2N2244 2N1564 2n2382 Delco
Text: LOW•POWER SILICON NPN Item Number Part Number Manufacturer >= 50 V, Cont'd 2NS98 2N1492 2N2514 2N339A 2N545 2N719A 2N1975 2N912 2N2520 2N757A See See See See See See See See See See 10 15 20 25 30 35 40 2N758B BC142 2N1564 2N734 2N754 2N742 2N742A 2N560
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2NS98
2N1492
2N2514
2N339A
2N545
2N719A
2N1975
2N912
2N2520
2N757A
2N2222B
2N2280
2N2307
BSY87
2SC696
Elcoma
2N2244
2N1564
2n2382
Delco
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3SM diode
Abstract: 2N2243 2N2222B 2N2244 2N2282 2N2250 2N2316 2N2249 2N2303 SOT-23 2N2306
Text: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31
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MPS5858
BFR50
TIPP31B
ST4341
BSW65
2N1572
2N738
2N2517
2N755
3SM diode
2N2243
2N2222B
2N2244
2N2282
2N2250
2N2316
2N2249
2N2303 SOT-23
2N2306
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2n2224
Abstract: 2N2222B 2N2244 2N4418 2N2374 2SC321H 2N2250 ESM2369 rca 2N2270 2N2245
Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 -60 65 - 70 EN914 2N708 2N914A 2N914A 2N914A 40219 40219 40221 40221 BSY19 BSY19 BSY19 2N3605A 2N3606A 2S95A 2S95A 2N1708A 2N321 0 BF165 2SC321H 2N2319 2N4264 2N2272
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EN914
2N708
2N914A
BSY19
2N3605A
2N3606A
2n2224
2N2222B
2N2244
2N4418
2N2374
2SC321H
2N2250
ESM2369
rca 2N2270
2N2245
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2SC3883
Abstract: 2N2250 S2000A 2N2222B 2N2244 STi-812 MRF239 2N2362 STI-801 2N2245
Text: POWER SILICON NPN Item Number Part Number I C 5 10 >= 5 A, 2S01398 2S01402 2S01651 2S01655 2SC2791 2SC2793 2SC3214 2S01185 2S01186 SOT723 ~~6~~~0 15 20 2SC3322 SOT41303 SOT41303 SML41304 2SC3060 SOT41304 SOT41304 SML812 ~~t:~;05 25 30 OTS812 OTS812 OTS812
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2S01398
2S01402
2S01651
2S01655
2SC2791
2SC2793
2SC3214
2S01185
2S01186
OT723
2SC3883
2N2250
S2000A
2N2222B
2N2244
STi-812
MRF239
2N2362
STI-801
2N2245
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mps 2369 M
Abstract: 2N3117 MPS 3117 2n2405 2N5769 JSW 70 2n2484 2N2586 mps 2369 AM 27533 DC
Text: FAIRCHILD SEMICONDUCTOR n ra n B B A4 DE I BLl b ci b 7 4 UUdí'iJdb n I 2N/PN/MPS/FTS02369 2N/PN/MPS/FTS02369A. 2N/FTS05769 i FAIRCHILD A Schlum berger C om pany NPN High Speed Saturated Switches • • • • PACKAGE 2N2369 2N2369A 2N5769 PN2369 PN2369A
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2N/PN/MPS/FTS02369
2N/PN/MPS/FTS02369A.
2N/FTS05769
2N2369
2N2369A
2N4209
2N5771
2N5769
PN2369
PN2369A
mps 2369 M
2N3117
MPS 3117
2n2405
JSW 70
2n2484
2N2586
mps 2369
AM 27533 DC
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bTE J> m bbSB'lBl DDEfiOT? ?Qb « A P X 2N2369A SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a TO-18 metal envelope prim arily intended for high-speed saturated switching and high frequency am plifier applications. Q U IC K R E F E R E N C E D A T A
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2N2369A
7Z79604
7Z79606
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2N2369
Abstract: 2N2369 equivalent
Text: MOTOROLA O rd e r th is d o c u m e n t SEMICONDUCTOR TECHNICAL DATA b y 2 N 2 3 6 9 /D Switching Transistors 2N2369 2N2369A* NPN Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS R ating Sym bol V alu e U nit C o lle c to r-E m itte r Voltage VCEO 15 Vdc C o lle c to r-E m itte r Voltage
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2N2369
2N2369A*
2N2369/D
2N2369 equivalent
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2n2369a
Abstract: 2N2369 2N2369A MOTOROLA 2N2369 equivalent Lg 32lx2r-me
Text: MAXIM UM RATINGS Symbol Value Unit C o llector-E m itter Voltage VCEO 15 Vdc C o llector-E m itter Voltage VcES 40 Vdc Collector-Base Voltage VcBO 40 Vdc Em itter-Base Voltage v EBO 4.5 Vdc 'CIPeak 500 mA 200 mA 0.36 2.06 W att mW ;C .68 6.85 W atts m W ',eC
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2N2369
O-206AA)
2n2369a
2N2369A MOTOROLA
2N2369 equivalent
Lg 32lx2r-me
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2N2369 equivalent
Abstract: 2N2369 MA 4108 2N2369A MOTOROLA 2N2368 2N3227 MOTOROLA 2N3227 2N2369A J 2N2369 St 2N2369
Text: MOTOROLA SC XSTRS/R F M A X IM U M R A T IN G S Symbol Rating Collector-Emitter Voltage Value Vdc 15 20 2N2368,9,A 2N3227 Collector-Emitter Voltage VCES 40 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage Ve b o 4.5 6.0 'C Peak 500 mA Collector Current — Continuous
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2N2368
2N3227
2N2369A,
2N2368
2N2369
2N2368,
2N2369 equivalent
MA 4108
2N2369A MOTOROLA
2N3227 MOTOROLA
2N2369A
J 2N2369
St 2N2369
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2n2222 itt
Abstract: 2N708 2n2388 P348A BSY87 14093 2n930 price bsy90 34313D ITT 2N1711
Text: ITT Sem iconductors NPN Transistors NPN Silicon General Purpose Amplifiers and Switches Metal can TO-39 V c b o up to 120V. Ic up to 750mA. PTOT” 800mW @ 25'C. Outline Drawing No. 66 applies. R E FE R E N C E T A B L E Characteristics @ Max. rating« BSY51
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VCBOUPtOl20V.
750mA.
800mW
BSY51
BSY54
BSY55
BSY56
BSY87
BSY88
BSY90
2n2222 itt
2N708
2n2388
P348A
BSY87
14093
2n930 price
bsy90
34313D ITT
2N1711
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2N2222A itt
Abstract: itt 2N2222A 2n2222 itt BFR37 BSX20 2n2222a ITT 2N2219 BSY87 2n2222a fairchild 2N2369A 2N914
Text: Fairchild Semiconductors S e m ic o n d ti^ H n Silicon Small Signal Transistors N P N Silico n H igh Speed Saturated Sw itch in g Transistors M e tal C a n T O IS R EFEREN CE T A B L E For medium speed - see General P u rp o se Section. C H A R A C T E R I S T IC S @ 25"C
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BSX20
35250H
BSX26
35251F
2N914
35252D
2N2369
35253B
2N2369A
35254X
2N2222A itt
itt 2N2222A
2n2222 itt
BFR37
BSX20 2n2222a
ITT 2N2219
BSY87
2n2222a fairchild
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BSY87
Abstract: BSY90 1133B 1128G 2n2388 1136G BSY56 BSY51 BSY54 BSY55
Text: ITT Sem iconductors NPN Transistors N P N Silico n General Purpose Amplifiers and Sw itches Metal can TO-39 V c b o up to 120V. Ic up to 750mA. PTOT” 800m W @ 25'C. O u tlin e D ra w in g N o. 66 ap p lie s. REFEREN CE T A B L E C h ara cte ristics @ M ax . rating«
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VCBOUPtOl20V.
750mA.
800mW
BSY51
BSY54
BSY55
BSY56
BSY87
BSY88
BSY90
BSY87
BSY90
1133B
1128G
2n2388
1136G
BSY56
BSY51
BSY54
BSY55
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BC119
Abstract: 2N1613 fairchild BSY90 BSX20 NPN TRANSISTORS LIST 2N915 itt 2222 bfr36 2N2369A 2N914
Text: Fairchild Sem iconductors S e m ic o n d ti^ H n Silicon Small Signal Transistors N P N Silicon High Speed Saturated Switching Transistors Metal Can T O IS R E FE R E N C E T A B L E For medium speed - see General P u rp ose Section. C H A R A C T E R I S T I C S @ 25"C
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BSX20
35250H
BSX26
35251F
2N914
35252D
2N2369
35253B
2N2369A
35254X
BC119
2N1613 fairchild
BSY90
NPN TRANSISTORS LIST
2N915
itt 2222
bfr36
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BU102
Abstract: BDX23 bd663 BD663B BDX61 BSY51 BD142 BDX23/40636 BDX71 BC117
Text: ITT Sem iconductors NPN Transistors NPN Silicon General Purpose Amplifiers and Switches Metal can TO-39 V c b o up to 120V. Ic up to 750mA. PTOT” 800mW @ 25'C. Outline Drawing No. 66 applies. R E FE R E N C E T A B L E Characteristics @ 25'C Max. rating«
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VCBOUPtOl20V.
750mA.
800mW
BSY51
BSY54
BSY55
BSY56
BSY87
BSY88
BSY90
BU102
BDX23
bd663
BD663B
BDX61
BSY51
BD142
BDX23/40636
BDX71
BC117
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Untitled
Abstract: No abstract text available
Text: Illl = ^ = Illl SEME 2N2369ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA D im e nsio ns in mm inches FEATURES 0.51 ±0.10 (0.02 ±0.004)
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2N2369ACSM
100kHz
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2N2222A JANTX
Abstract: 2N2222A motorola HEP transistors motorola hep bc107-108-109 CV8616 2N3501 JANTX 2n3439 motorola 2N3440 MOTOROLA MM6427
Text: METAL SMALL-SIGNAL TRANSISTORS continued Darlington Transistors These transisto rs are ch a ra c te rize d for very high g ain and input im ped an ce a p p lic a tio n s . D evices are of m o nolithic con struction. 'c Device Type V(BR) CEO Volts Min mA
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MM6427
BSS52
BSS51
BSS50
2N5229
2N1613
2N2369
2N3440
2N1711
2N2369A
2N2222A JANTX
2N2222A motorola
HEP transistors
motorola hep
bc107-108-109
CV8616
2N3501 JANTX
2n3439 motorola
2N3440 MOTOROLA
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Untitled
Abstract: No abstract text available
Text: REVISIONS 5 11 IMI &I w w l IIM m u l t i r n m DCP # REV DOC. NO. SPC—F004 DESCRIPTION n 1885 A DRAWN DATE EO 02/03/06 RELEASED * Effective: 7 /8 /0 2 CHECKD DATE HO 2/6/06 * DCP No: 1398 APPRVD DATE JWM 2/6/06 D e s c r ip t io n : H I G H - S P E E D SATURATED SWITCH. Th e 2 N 2 3 6 9 A is a s ilic o n p la n a r e p ita x ia l N P N in J e d e c T O — 18,
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SPC--F004
300MHz
M2/6/06
2N2369A
35C0691
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Untitled
Abstract: No abstract text available
Text: TO-18 - A • T o P IN C O N F IG U R A T IO N 1. E m itte r 2. B a s e 3 . C o lle c to r DIM MIN A 5,24 5,84 B 4,52 4,97 MAX C 4,31 5,33 D 0,40 0,53 0,76 E - F - 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 L 45 DEG - ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN
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2N2221
BSX48
CIL352
BSX21
BFY76
BCY59-9
BCY59-8
BCY59-7
BCY59-10
BCY59
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Untitled
Abstract: No abstract text available
Text: Micmsemi w aienow n, m a h a 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 P rogress P o w ered b y Technology Features • • • • 40 Volts 200mAmps Meets MIL-S-19500/317 Collector-Base Voltage 40V Collector Current: 200 mA
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MIL-S-19500/317
200mAmps
MSC0277A
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BSX21
Abstract: BC107C BC10B 2N718 pin configuration 2N915 BC109C pin configuration bfy76 BSY79 BC-108 2N2221A
Text: TO-18 P IN C O N F I G U R A T I O N 1. E m itte r 2. B a s e 3. C o lle c to r DIM MIN A 5,24 MAX 5,84 B 4,52 4,97 C 4,31 5,33 D 0,40 0,53 E - F - 0,76 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45 DEG ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN
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BCY59-9
BFY76
BSX21
BSX48
BSY79
CIL351
CIL352
BSX21
BC107C
BC10B
2N718 pin configuration
2N915
BC109C pin configuration
BC-108
2N2221A
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transistor t2a
Abstract: NPN transistor 2n2222A st 2n 2907a ZTX310 ZDT- 5V BSV27 J 2N2369 ZTX312 DATA ZTX313 DATA BSV23
Text: SILICON TRANSISTORS Planar Epitaxial High Speed Switching n-p-n Characteristics Maximum Ratings Type No. v CBO VCER Vebo Ptot 25°C smb. fT min. Storajje Time ts (i nax.) at lc mA MHz nS 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 150 150 10 200 200
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BSY95A
ZTX310,
BSV23
ZTX311
BSV24
ZTX312,
BSV25
ZTX313,
BSV26
ZTX314,
transistor t2a
NPN transistor 2n2222A
st 2n 2907a
ZTX310
ZDT- 5V
BSV27
J 2N2369
ZTX312 DATA
ZTX313 DATA
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2n2222 itt
Abstract: BSY86 ME6002 ME6102 BFY72 MA8003 fairchild semiconductors 2n2222 micro electronics ME8003 BFY50
Text: Fairchild Sem iconductors S e m ic o n d ti^ H n Silicon Small Signal Transistors N PN Silicon High Speed Saturated Switching Transistors M etal Can T O IS REFERENCE T A B LE For medium speed - see General Purpose S ection. C H A R A C TE R IS TIC S @ 25"C
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BSX20
35250H
BSX26
35251F
2N914
35252D
2N2369
35253B
2N2369A
35254X
2n2222 itt
BSY86
ME6002
ME6102
BFY72
MA8003
fairchild semiconductors
2n2222 micro electronics
ME8003
BFY50
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