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    semicoa 2N2222A

    Abstract: 2n2222A graphs 2N2222A semicoa 2N2222A JAN 2N2222A JANS 2N2222A
    Text: Data Sheet No. 2N2222A Generic Part Number: 2N2222A Type 2N2222A Geometry 0400 Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/255 Features: • • • • • • General-purpose transistor for switching and amplifier applicatons. Housed in TO-18 case.


    Original     		PDF 2N2222A MIL-PRF-19500/255 MIL-PRF-19500/255 semicoa 2N2222A 2n2222A graphs 2N2222A semicoa 2N2222A JAN 2N2222A JANS 2N2222A

    2N2222A motorola

    Abstract: 2n2222 motorola 2N2219A MOTOROLA motorola 2N2219 2N2219 MOTOROLA motorola 2n2222 motorola 2N2219A equivalent transistor 2N2222 motorola 2N2222A 2n2222
    Text: MOTOROLA Order this document by 2N2219/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors COLLECTOR 3 2 BASE LAST SHIP 21/03/00 2N2219 2N2219A* 2N2222 2N2222A* NPN Silicon *Motorola Preferred Devices 1 EMITTER MAXIMUM RATINGS Symbol 2N2219 2N2222 2N2219A


    Original     		PDF 2N2219/D 2N2219 2N2219A* 2N2222 2N2222A* 2N2219A 2N2222A 2N2219 2N2222A motorola 2n2222 motorola 2N2219A MOTOROLA motorola 2N2219 2N2219 MOTOROLA motorola 2n2222 motorola 2N2219A equivalent transistor 2N2222 motorola 2N2222A 2n2222

    2N2222AUB

    Abstract: semicoa 2N2222A 2N2222A 2N2222AUB JANS 2n2222A graphs
    Text: Data Sheet No. 2N2222AUB Generic Part Number: 2N2222A Type 2N2222AUB Geometry 0400 Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/255 Features: • • • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a cersot case.


    Original     		PDF 2N2222AUB 2N2222A MIL-PRF-19500/255 MIL-PRF-19500/255 VEBO120 2N2222AUB semicoa 2N2222A 2N2222A 2N2222AUB JANS 2n2222A graphs

    Untitled

    Abstract: No abstract text available
    Text: MSR2N2222AUB / UBC Screened Levels: MSR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2222AUB 100 Krad 100 Krad DESCRIPTION This RHA level high speed switching NPN transistor, 2N2222A in a UB or UBC ceramic


    Original     		PDF MSR2N2222AUB MIL-PRF-19500 MSR2N2222AUB 2N2222A EEE-INST-002 T4-LDS-0337-2,

    Untitled

    Abstract: No abstract text available
    Text: MVR2N2222AUB / UBC Screened Levels: MVR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MVR2N2222AUB 100 Krad 100 Krad DESCRIPTION This RHA level high speed switching NPN transistor, 2N2222A in a UB or UBC ceramic


    Original     		PDF MVR2N2222AUB MIL-PRF-19500 MVR2N2222AUB 2N2222A EEE-INST-002 T4-LDS-0331-2,

    Untitled

    Abstract: No abstract text available
    Text: MVR2N2222A L Qualified Levels: MVR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MVR2N2222A(L) 100 Krad 100 Krad DESCRIPTION This RHA level NPN switching transistor, MVR2N2222A device in a TO-206AA package, is


    Original     		PDF MVR2N2222A MIL-PRF-19500 O-206AA EEE-INST-002 T4-LDS-0331,

    Untitled

    Abstract: No abstract text available
    Text: MSR2N2222A L Qualified Levels: MSR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2222A(L) 100 Krad 100 Krad DESCRIPTION This RHA level NPN switching transistor, MSR2N2222A in a TO-206AA package, is ideal to


    Original     		PDF MSR2N2222A MIL-PRF-19500 O-206AA EEE-INST-002 microsemi00 T4-LDS-0337,

    Untitled

    Abstract: No abstract text available
    Text: MVR2N2222AUA Screened Levels: MVR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MVR2N2222AUA 100 Krad 100 Krad DESCRIPTION This RHA level NPN switching transistor, MVR2N2222AUA device in a UA package, is ideal to


    Original     		PDF MVR2N2222AUA MIL-PRF-19500 MVR2N2222AUA EEE-INST-002 T4-LDS-0331-1,

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra ILD3135M120 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon LDMOS FET  High Power Gain  Excellent thermal stability  Gold Metal Part number ILD3135M120 is designed for S-Band radar applications operating over the 3.1 – 3.5 GHz instantaneous


    Original     		PDF ILD3135M120 ILD3135M120 300us ILD3135M120-REV-NC-DS-REV-I

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra ILD2933M130 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon LDMOS FET  High Power Gain  Excellent thermal stability  Gold Metal Part number ILD2933M130 is designed for S-Band radar applications operating over the 2.9 – 3.3 GHz instantaneous frequency band.


    Original     		PDF ILD2933M130 ILD2933M130 300us ILD2933M130-REV-NC-DS-REV-A

    Untitled

    Abstract: No abstract text available
    Text: MSR2N2222AUA Screened Levels: MSR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2222AUA 100 Krad 100 Krad DESCRIPTION This RHA level NPN switching transistor, MSR2N2222AUA device in a UA package, is ideal to


    Original     		PDF MSR2N2222AUA MIL-PRF-19500 MSR2N2222AUA EEE-INST-002 T4-LDS-0337-1,

    Snubber circuits theory, design and application

    Abstract: CTX08-13916 IRF640 application note SEM-700 Closing The Feedback Loop UNITRODE product and applications handbook telsa power MOSFET IRF640 80 watt power MOSFET IRF640 80 watt as switch philips 3C85 ferrite material PHILIPS toroidal core 3c85
    Text: APPLICATION NOTE U-165 - SLUU096 - JUNE 2001 Lisa Dinwoodie Reference Design: Isolated 50 Watt Flyback Converter Using the UCC3809 Primary Side Controller UNITRODE CORPORATION U-165 Reference Design: Isolated 50 Watt Flyback Converter Using the UCC3809 Primary Side Controller


    Original     		PDF U-165 SLUU096 UCC3809 U-165 Snubber circuits theory, design and application CTX08-13916 IRF640 application note SEM-700 Closing The Feedback Loop UNITRODE product and applications handbook telsa power MOSFET IRF640 80 watt power MOSFET IRF640 80 watt as switch philips 3C85 ferrite material PHILIPS toroidal core 3c85

    power MOSFET IRF640 80 watt

    Abstract: OSCON 6SH330M power MOSFET IRF640 80 watt as switch Snubber circuits theory, design and application SEM-700 Closing The Feedback Loop FERRITE TRANSFORMER 20khz toroid unitrode SEM-1100 CTX08-13916 IGBT gate optocoupler driver for a buck converter 3C85 toroid
    Text: APPLICATION NOTE U-165 Lisa Dinwoodie Design Review: Isolated 50 Watt Flyback Converter Using the UCC3809 Primary Side Controller and the UC3965 Precision Reference and Error Amplifier U-165 Design Review: Isolated 50 Watt Flyback Converter Using the UCC3809 Primary Side


    Original     		PDF U-165 UCC3809 UC3965 power MOSFET IRF640 80 watt OSCON 6SH330M power MOSFET IRF640 80 watt as switch Snubber circuits theory, design and application SEM-700 Closing The Feedback Loop FERRITE TRANSFORMER 20khz toroid unitrode SEM-1100 CTX08-13916 IGBT gate optocoupler driver for a buck converter 3C85 toroid

    spice 74ls00

    Abstract: No abstract text available
    Text: CircuitMaker for Windows Integrated Schematic Capture and Circuit Simulation User Manual CircuitMaker 6 CircuitMaker PRO Revision C Information in this document is subject to change without notice and does not represent a commitment on the part of MicroCode Engineering. The software described in this document is


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-1829; Rev 1; 6/01 KIT ATION EVALU E L B A AVAIL Low-Cost Precision Sensor Signal Conditioner The MAX1452 architecture includes a programmable sensor excitation, a 16-step programmable-gain amplifier PGA , a 768-byte (6144 bits) internal EEPROM, four 16-bit DACs, an uncommitted op amp, and an onchip temperature sensor. In addition to offset and span


    Original     		PDF 40mV/V 16-Bit MAX1452 MAX1452

    circuit diagram bridge transducer 4-20ma using op

    Abstract: digital piezoresistive weight sensor strain sensor 4-20mA transmitter for a bridge type transducer circuit diagram bridge transducer 4-20ma resistive Humidity Sensor bridge transducer 4-20ma transmitter weight transducer 4-20ma diode bridge 16A MAX1452
    Text: 19-1829; Rev 0; 10/00 ILABLE N KIT AVA EVALUATIO Low-Cost Precision Sensor Signal Conditioner The MAX1452 architecture includes a programmable sensor excitation, a 16-step programmable-gain amplifier PGA , a 768-byte (6144 bits) internal EEPROM, four 16-bit DACs, an uncommitted op amp, and an onchip temperature sensor. In addition to offset and span


    Original     		PDF MAX1452 16-step 768-byte 16-bit 16-pin MAX1452 circuit diagram bridge transducer 4-20ma using op digital piezoresistive weight sensor strain sensor 4-20mA transmitter for a bridge type transducer circuit diagram bridge transducer 4-20ma resistive Humidity Sensor bridge transducer 4-20ma transmitter weight transducer 4-20ma diode bridge 16A

    digital piezoresistive pressure sensor wiring fso

    Abstract: resistive Humidity Sensor MAX1452 MAX1452AAE MAX1452ATG MAX1452CAE MAX1452EAE
    Text: 19-1829; Rev 2; 4/09 KIT ATION EVALU E L B AVAILA Low-Cost Precision Sensor Signal Conditioner Features The MAX1452 is a highly integrated analog-sensor signal processor optimized for industrial and process control applications utilizing resistive element sensors. The


    Original     		PDF MAX1452 16-bit MAX1452 digital piezoresistive pressure sensor wiring fso resistive Humidity Sensor MAX1452AAE MAX1452ATG MAX1452CAE MAX1452EAE

    digital piezoresistive weight sensor

    Abstract: No abstract text available
    Text: EVALUATION KIT AVAILABLE MAX1452 Low-Cost Precision Sensor Signal Conditioner General Description Features The MAX1452 is a highly integrated analog-sensor signal processor optimized for industrial and process control applications utilizing resistive element sensors. The


    Original     		PDF MAX1452 16-bit digital piezoresistive weight sensor

    Untitled

    Abstract: No abstract text available
    Text: ¡J8BBBBB88& iwiHBBffi p e | M s mssssP .rfHHHHHHHHMh. m1 1 itittnnnnn hhhhhhk-. loniftBHhr. IIr ^888o 88% #f 1 l Da ta S he e t No. 2 N 2 2 2 2 A $ sdL SEMICONDUCTORS G eneric Part Num ber: 2N2222A Type 2N2222A G eom etry 0400 P olarity NPN Q ual Level: J A N -J A N S


    OCR Scan     		PDF J8BBBBB88& 2N2222A F-19500/255

    2N2222A 331

    Abstract: 2n2222 -331 2N2222A motorola 2n2222 -331 transistors 2n2222 a 331 2n2222 331 transistors 2n2222 h 331 transistors 2n2222 h 331 2n2222 - 331 2n2222 331
    Text: MOTOROLA SC XSTRS/R 12E F 2N2218A 2N2219A 2N2221A 2N2222A 2N5581 2N55S2 Unît 40 40 Vdc Vdc Sym bol 2N2218 2N2219 2N2221 2N2222 Collector-Emitter Voltage v CEO 30 Collector-Base Voltage VCBO 60 75 75 Emrtter*Base Voltage Ve b o 5.0 6.0 6.0 Vdc 'c 800 800 800


    OCR Scan     		PDF b3b7E54 2N2218 2N2219 2N2221 2N2222 2N2218A 2N2219A 2N2221A 2N2222A 2N2218, 2N2222A 331 2n2222 -331 2N2222A motorola 2n2222 -331 transistors 2n2222 a 331 2n2222 331 transistors 2n2222 h 331 transistors 2n2222 h 331 2n2222 - 331 2n2222 331

    2N2222A motorola

    Abstract: equivalent transistor 2N2222 2n2222 equivalent s parameters of 2N2222 equivalent of 2n2222 motorola 2N2219 2n2219 equivalent 2n2222 motorola MOTOROLA 2n2222 TRANSISTOR 2N2218A 2N2219A motorola
    Text: q S S • o f e S M A X IM U M RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current — Continuous Symbol 2N2219 2N2222 2N2218A 2N2219A 2N2222A Unit v CEO 30 40 Vdc v CBO 60 75 Vdc v EBO 5.0 6.0 Vdc mAdc


    OCR Scan     		PDF 2N2219 2N2222 2N2218A 2N2219A 2N2222A 2N2222A motorola equivalent transistor 2N2222 2n2222 equivalent s parameters of 2N2222 equivalent of 2n2222 motorola 2N2219 2n2219 equivalent 2n2222 motorola MOTOROLA 2n2222 TRANSISTOR 2N2218A 2N2219A motorola

    Untitled

    Abstract: No abstract text available
    Text: ¡J8BBBBB88& p | M iwiHBBffi smssssPe .rfHHHHHHHHMh. 1m1 itittnnnnn hhhhhhk-. loniftBHhr. I Ir ^888o 88% #f 1 l D a ta S h e e t No. 2 N 2 2 2 2 A U B $ sdL SEMICONDUCTORS G eneric Part Num ber: 2N2222A Type 2N2222AUB G eom etry 0400 P olarity NPN Q ual Level: J A N -J A N S


    OCR Scan     		PDF J8BBBBB88& 2N2222A 2N2222AUB F-19500/255

    s parameters of 2N2222

    Abstract: 2N2222 2n2222 equivalent 2N2222 z parameters 2n2219 equivalent 2N2219A equivalent equivalent of 2n2222 2n2222 test circuit 2n2222a 2N2219
    Text: M A X IM U M RATINGS Rating Symbol 2N 2219 2N2222 2N2218A 2N2219A 2N2222A Unit Vdc C o lle cto r-E m itte r Voltage v CEO 30 40 Collector-Base Voltage v CBO 60 75 Vdc Em itter-Base Voltage v EBO 5.0 6.0 Vdc m Adc C o lle ctor C u rrent — C ontinuous •c


    OCR Scan     		PDF 2N2222 2N2218A 2N2219 2N2219A 2N2222A s parameters of 2N2222 2n2222 equivalent 2N2222 z parameters 2n2219 equivalent 2N2219A equivalent equivalent of 2n2222 2n2222 test circuit

    smd npn 2n2222

    Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200
    Text: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.


    OCR Scan     		PDF 2PC1815L 2PC1815 10xx0. 7Z88986 smd npn 2n2222 bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200