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    74AC11086D Texas Instruments Quadruple 2-Input Exclusive-OR Gates 16-SOIC -40 to 85 Visit Texas Instruments Buy
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    2N2222 TI Price and Stock

    Central Semiconductor Corp 2N2222 TIN/LEAD

    Transistor GP BJT NPN 30V 800mA 3-Pin TO-18 Box - Boxed Product (Development Kits) (Alt: 2N2222 TIN/LEAD)
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    Avnet Americas 2N2222 TIN/LEAD Box 2,000
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    Mouser Electronics 2N2222 TIN/LEAD 1,342
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    Central Semiconductor Corp 2N2222A TIN/LEAD

    Bipolar Transistors - BJT 75Vcbo 40Vceo 6.0V 800mA 500mW
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    Mouser Electronics 2N2222A TIN/LEAD 1,342
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    2N2222 TI Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N2222

    Abstract: 2n2222a 2N2222 npn small signal current gain Transistor 2N2222A 2N2222 pnp transistor 2N2222 2N2222 capacitance tr 2n2222 Datasheet 2N2222 transistor 2N2222 transistor
    Text: NPN 2N2222 – 2N2222A PNP 2N2907 – 2N2907A SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2222 and 2N2222A are NPN transistors mounted in TO-18 metal package with the collector connected to the case . They are primarily intended for high speed switching. The 2N2222 is also suitable for d.c. and v.h.f./u.h.f.


    Original     		PDF 2N2222 2N2222A 2N2907 2N2907A 2N2222 2N2222A 2N2907 2N2222 npn small signal current gain Transistor 2N2222A 2N2222 pnp transistor 2N2222 2N2222 capacitance tr 2n2222 Datasheet 2N2222 transistor 2N2222 transistor

    2N2222A motorola

    Abstract: 2n2222 motorola 2N2219A MOTOROLA motorola 2N2219 2N2219 MOTOROLA motorola 2n2222 motorola 2N2219A equivalent transistor 2N2222 motorola 2N2222A 2n2222
    Text: MOTOROLA Order this document by 2N2219/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors COLLECTOR 3 2 BASE LAST SHIP 21/03/00 2N2219 2N2219A* 2N2222 2N2222A* NPN Silicon *Motorola Preferred Devices 1 EMITTER MAXIMUM RATINGS Symbol 2N2219 2N2222 2N2219A


    Original     		PDF 2N2219/D 2N2219 2N2219A* 2N2222 2N2222A* 2N2219A 2N2222A 2N2219 2N2222A motorola 2n2222 motorola 2N2219A MOTOROLA motorola 2N2219 2N2219 MOTOROLA motorola 2n2222 motorola 2N2219A equivalent transistor 2N2222 motorola 2N2222A 2n2222

    2N2907

    Abstract: 2N2907A 2N2907 PNP Transistor 2N2907 NPN Transistor 2N2907 PNP 2N2222 data sheet transistor 2N2907 equivalent 2N2907A 2n2907 metal can 2n2907 transistor
    Text: PNP 2N2907 – 2N2907A NPN 2N2222 – 2N2222A SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2907 and 2N2907aA are PNP transistors mounted in TO-18 metal package with the collector connected to the case . They are primarily intended for high speed switching. NPN complements are 2N2222 and 2N2222A .


    Original     		PDF 2N2907 2N2907A 2N2222 2N2222A 2N2907 2N2907aA 2N2222 2N2907A 2N2907 PNP Transistor 2N2907 NPN Transistor 2N2907 PNP data sheet transistor 2N2907 equivalent 2N2907A 2n2907 metal can 2n2907 transistor

    2n2222

    Abstract: 2N2222 NPN Transistor features transistor 2N2222 PHILIPS 2N2222A 0612 2N2222 circuit 2n2222 iv C2N2222A for transistor 2N2222 ST 2n2222 transistor 2N2222
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2222; 2N2222A NPN switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 29 Philips Semiconductors Product specification NPN switching transistors


    Original     		PDF M3D125 2N2222; 2N2222A 2N2907A. MAM264 SCA54 117047/00/02/pp8 2n2222 2N2222 NPN Transistor features transistor 2N2222 PHILIPS 2N2222A 0612 2N2222 circuit 2n2222 iv C2N2222A for transistor 2N2222 ST 2n2222 transistor 2N2222

    CDIL 2N2222 Transistor

    Abstract: 2N2222 TO-18 s parameters of 2N2222 pin configuration transistor 2N2222 2N2222 2N2222 cdil data sheet transistor 2n2222 PIN CONFIGURATION 2N2222 CDIL 2N2222 2N2221
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2221 2N2222 TO-18 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO


    Original     		PDF ISO/TS16949 2N2221 2N2222 C-120 2222Rev 310303E CDIL 2N2222 Transistor 2N2222 TO-18 s parameters of 2N2222 pin configuration transistor 2N2222 2N2222 2N2222 cdil data sheet transistor 2n2222 PIN CONFIGURATION 2N2222 CDIL 2N2222

    CDIL 2N2222 Transistor

    Abstract: pin configuration transistor 2N2222 transistor 2N2222 2N2222 2N2221 Metal 2n2222 PIN CONFIGURATION 2N2222 s parameters of 2N2222 2N2221-2N2222 2N2222 transistor
    Text: Continental Device India Limited IS/ISO 9002 Lic# QSC/L- 000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2221 2N2222 TO-18 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION


    Original     		PDF 2N2221 2N2222 C-120 2222Rev 210403E CDIL 2N2222 Transistor pin configuration transistor 2N2222 transistor 2N2222 2N2222 Metal 2n2222 PIN CONFIGURATION 2N2222 s parameters of 2N2222 2N2221-2N2222 2N2222 transistor

    ST 2n2222

    Abstract: No abstract text available
    Text: Radiation Tolerant Bulkhead Optocoupler 66280 Mii OPTOELECTRONIC PRODUCTS DIVISION PRELIMINARY 8/18/05 Features: Applications: • • • • • • High reliability Base lead provided for conventional transistor biasing • 850 nm LED, silicon photodiode & 2N2222


    Original     		PDF 2N2222 850nm ST 2n2222

    2N2221

    Abstract: 2N2222 s parameters of 2N2222 2N2222 application notes 2N2221-2N2222 2N2222 transistor PIN CONFIGURATION 2N2222 2N2222 base capacitance 2N2222, CDIL
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2221 2N2222 TO-18 Metal Can Package Switching and Linear Application DC and VHF Amplifier Applications


    Original     		PDF 2N2221 2N2222 2N2221, C-120 2N2221 22Rev290801 2N2222 s parameters of 2N2222 2N2222 application notes 2N2221-2N2222 2N2222 transistor PIN CONFIGURATION 2N2222 2N2222 base capacitance 2N2222, CDIL

    2n2222 jan

    Abstract: 2N2222
    Text: 2N2222 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 30V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.8A All Semelab hermetically sealed products


    Original     		PDF 2N2222 O206AA) 19-Jun-02 2n2222 jan 2N2222

    2n2222 jan

    Abstract: No abstract text available
    Text: 2N2222 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 30V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.8A All Semelab hermetically sealed products


    Original     		PDF 2N2222 O206AA) 16-Jul-02 2n2222 jan

    PIN CONFIGURATION 2N2222

    Abstract: 2n2222 2N2222 application notes 2n2222 npn bipolar junction Metal 2n2222 Datasheet 2N2222 transistor NPN transistor 2n2222 tr 2n2222 2N2222 WITH PIN NUMBER Multicomp 2N2222
    Text: 2N2222 Low Power Bipolar Transistors Features: • NPN Silicon Planar Switching Transistors. • Switching and Linear application DC and VHF Amplifier applications. TO-18 Metal Can Package Dimensions Minimum Maximum A 5.24 5.84 B 4.52 4.97 C 4.31 5.33 D 0.40


    Original     		PDF 2N2222 PIN CONFIGURATION 2N2222 2n2222 2N2222 application notes 2n2222 npn bipolar junction Metal 2n2222 Datasheet 2N2222 transistor NPN transistor 2n2222 tr 2n2222 2N2222 WITH PIN NUMBER Multicomp 2N2222

    2n2222

    Abstract: 2n2222 jan NPN transistor 2n2222 250M
    Text: 2N2222 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 30V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.8A All Semelab hermetically sealed products


    Original     		PDF 2N2222 O206AA) 2-Aug-02 2n2222 2n2222 jan NPN transistor 2n2222 250M

    Untitled

    Abstract: No abstract text available
    Text: Radiation Tolerant Bulkhead Optocoupler 66280 MICROPAC OPTOELECTRONIC PRODUCTS DIVISION PRELIMINARY 07/11/07 Features: Applications: • • • • • • • • • • High reliability Base lead provided for conventional transistor biasing 850 nm LED, silicon photodiode & 2N2222


    Original     		PDF 2N2222 850nm prove10mA

    2n2222

    Abstract: 2N2222A V2N2222 J 2N2222A 2N2222 capacitance 2n2222 equivalent ic 4521 2N2222 application note 2N2222 application notes 2N2222, 2N2222A
    Text: 2N2222 2N2222A Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • High current max.800mA Low voltage (max.40V) NPN Switching Transistors Maximum Ratings Symbol VCEO VCBO VEBO IC ICM IBM TJ TSTG Rating


    Original     		PDF 2N2222 2N2222A 800mA) 150mAdc, 2n2222 2N2222A V2N2222 J 2N2222A 2N2222 capacitance 2n2222 equivalent ic 4521 2N2222 application note 2N2222 application notes 2N2222, 2N2222A

    FN2222A

    Abstract: RT2222
    Text: 2N2222 PN 2 2 2 2 2N2222A PN2222A THE 2N2222, 2N2222A, PN2222, PN2222A ARB NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE FNP TYPE 2N2907, 2N2907A, PN2907, PN2907A RESPECTIVELY.


    OCR Scan     		PDF 2N2222 2N2222A PN2222A 2N2222, 2N2222A, PN2222, PN2222A 2N2907, 2N2907A, PN2907, FN2222A RT2222

    2N2222

    Abstract: FN2222 2n2222 micro electronics pn2222 2n2222 FN2222A PN2222A le tr 2n2222 PN2907 T092 2N2222-PN2222
    Text: THE 2N2222, 2N2222A, PN2222, PN2222A ARB NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE PNP TYPE 2N2907, 2N2907A, PN2907, PN2907A RESPECTIVELY. THE 2N2222, 2N2222A ARE PACKED IN TO-18.


    OCR Scan     		PDF 2N2222 PN2222 2N2222A PN2222A 2N2222, 2N2222A, PN2222, 2N2907, 2N2907A, FN2222 2n2222 micro electronics pn2222 2n2222 FN2222A PN2222A le tr 2n2222 PN2907 T092 2N2222-PN2222

    PN 2n2222A

    Abstract: 3n2222 2N2222 2K2222 3N2222A 2N2222-PN2222 ST 2n2222 2K222 pn 2N22 VBB-23
    Text: 2N2222 PN 2 2 2 2 2N2222A PN2222A THE 2N2222, 2N2222A, PN2222, PN2222A ARB NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE FNP TYPE 2N2907, 2N2907A, PN2907, PN2907A RESPECTIVELY.


    OCR Scan     		PDF 2N2222 2N2222A PN2222A 2N2222, 2N2222A, PN2222, PN2222A 2N2907, 2N2907A, PN2907Â PN 2n2222A 3n2222 2K2222 3N2222A 2N2222-PN2222 ST 2n2222 2K222 pn 2N22 VBB-23

    2222a

    Abstract: tr 2222a national PN2222A national semiconductor 2222A pn2222 national semiconductor 2n2222 national semiconductor br 2222 npn PN2222A NATIONAL MPQ2222 2N/PN2222
    Text: National Semiconductor PN2222 PN2222A 2N2222 2N2222A MMBT2222 MMBT2222A MPQ2222* T O - 1 16 TO- 9 2 T L /G /1 0 1 0 0 -7 T L /G /1 0 1 0 0 -5 T L /G /10100-1 NPN General Purpose Amplifier Electrical Characteristics T a


    OCR Scan     		PDF MBT2222/MPQ2222/2N2222A/PN2222A/MMBT2222A 2N2222 2N2222A PN2222 PN2222A MMBT2222 MMBT2222A MPQ2222* MPQ2222 MPQ2222 2222a tr 2222a national PN2222A national semiconductor 2222A pn2222 national semiconductor 2n2222 national semiconductor br 2222 npn PN2222A NATIONAL 2N/PN2222

    2N2222A 331

    Abstract: 2n2222 h 331 transistors 2n2222 -331 2n2222 a 331 2n2222 331 transistors 2n2222 - 331 2n2222 h 331 2n2222+h+331+transistors 2n2222+a+331 2n2222a
    Text: N AflER PHILIPS/DISCRETE b'lE D bb53c131 QDEAQfibi T5D I IAPX 2N2222 2N2222A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a TO-18 metal envelope with the collector connected to the case. They are primar­ ily intended for high speed switching. The 2N2222 is also suitable fo r d.c. and v.h.f./u.h.f. amplifiers.


    OCR Scan     		PDF bb53c 2N2222 2N2222A 2N2222 7Z85736 2N2222A 331 2n2222 h 331 transistors 2n2222 -331 2n2222 a 331 2n2222 331 transistors 2n2222 - 331 2n2222 h 331 2n2222+h+331+transistors 2n2222+a+331 2n2222a

    Untitled

    Abstract: No abstract text available
    Text: P FORWARDINTERNATIONAL ELECTRONICS LTD. 2N2222 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR Colector-Bnittef Voltage: VCBO=30V * Cofcctor Dissipation: Pc max =625 mW ABSOLUTE MAXIMUM RATINGS at Tamb=25'C C haracteristic


    OCR Scan     		PDF 2N2222 300uS, 150mA 500roA 150mA 500mA

    2n2222

    Abstract: 2N2222A 2N2222A JANTX 2N2221 2N2222A JANTXV BR 2N2222A NPN 2n2222 2n2222A 2N2222 capacitance 2N2222A JAN 2N2221A
    Text: 2N2221 2N2221A* 2N2222 2N2222A* MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @ T A = 25UC Derate above 25°C Total Device Dissipation @ Tc = 25"C


    OCR Scan     		PDF 2N2221 2N2222 2N2221A 2N2222A 2N2221A* 2N2222A* 2N2222A JANTX 2N2222A JANTXV BR 2N2222A NPN 2n2222 2n2222A 2N2222 capacitance 2N2222A JAN

    2N2907

    Abstract: PN2907 PN2907A J 2N2907 2N2222 2N2222A 2N2907A PN2222 PN2222A PNP pN2907
    Text: CASE TO-18 CASE T0-92A CBE EBC 2N2907 2N2907A PN2907 PN2907A THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222,


    OCR Scan     		PDF 2N2907A PN2907A 2N2907, 2N2907A, PN2907, 2N2222, 2N2222A, PN2222, PN2222A 2N2907 PN2907 J 2N2907 2N2222 2N2222A PN2222 PNP pN2907

    2n2222 h parameter values

    Abstract: 2n2222 2n2222a 2N2222 NPN Transistor features 2n2222 ti 2n2222 transistor pin b c e transistor 2N2222 PHILIPS 2N2222 circuit 2N2222, 2N2222A 2n2222 test circuit
    Text: Philips Semiconductors Product specification NPN switching transistors 2N2222; 2N2222A FEATURES PINNING • High current max. 800 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • Linear amplification and switching.


    OCR Scan     		PDF 2N2907A. 2N2222; 2N2222A 2N2222 2N2222A 2n2222 h parameter values 2N2222 NPN Transistor features 2n2222 ti 2n2222 transistor pin b c e transistor 2N2222 PHILIPS 2N2222 circuit 2N2222, 2N2222A 2n2222 test circuit

    2N2222 circuit

    Abstract: 2N2222 npn 2N2222 2n2222 test circuit 2N2222 base capacitance
    Text: 2N2222 NPN Silicon Epitaxial Planar Transistor with high cutoff frequency, for high speed switching mox.0.5^ Metal case JEDEC TO-18 18 A 3 according to DIN 41876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Absolute Maximum Ratings


    OCR Scan     		PDF 2N2222 2N2222 circuit 2N2222 npn 2N2222 2n2222 test circuit 2N2222 base capacitance