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    2N 6058 Search Results

    2N 6058 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    66506-058LF Amphenol Communications Solutions Quickie Header, Wire to Board Connector, 4 wall, Double Row, 60 Positions, 2.54 mm (0.1 in.), Vertical Header 0.76 um (30 u\\.) Gold Mating Plating. Visit Amphenol Communications Solutions
    10073456-058LF Amphenol Communications Solutions Quickie Header, Wire to Board Connector, Double Row, 44 Positions, Press-Fit Slimline Header 2.54 mm 0.76 um (30 u\\.) Gold or GXT™ Mating Plating. Visit Amphenol Communications Solutions
    51866-058LF Amphenol Communications Solutions PwrBlade®, Power Supply Connectors, 2P 16S 2P Right Angle Receptacle. Visit Amphenol Communications Solutions
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    2N 6058 Price and Stock

    Microchip Technology Inc JANTX2N6058

    TRANS NPN DARL 80V 12A TO3
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    Microchip Technology Inc 2N6058

    PNP POWER TRANSISTOR SILICON AMP
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    Microchip Technology Inc JAN2N6058

    TRANS NPN DARL 80V 12A TO3
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    Microchip Technology Inc JANTXV2N6058

    TRANS NPN DARL 80V 12A TO3
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    VPT Components JANTXV2N6058

    NPN POWER TRANSISTOR - Bulk (Alt: JANTXV2N6058)
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    2N 6058 Datasheets (47)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6058 Comset Semiconductors Power Complementary Silicon Transistors - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6058 Microsemi TRANS DARLINGTON NPN 80V 12A 3TO-3 - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6058 Motorola Darlington Complementary Silicon Power Transistor - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6058 On Semiconductor DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6058 On Semiconductor Darlington Complementary Silicon Power Transistor Original PDF
    2N6058 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6058 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N6058 Boca Semiconductor DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N6058 Central Semiconductor Darlington Bipolar Transistor, NPN, 80V at Tc=25C, TO-3, 2-Pin - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N6058 Central Semiconductor POWER DARLINGTON TRANSISTORS (METAL) Scan PDF
    2N6058 Crimson Semiconductor EPITAXIAL BASE / PLANAR Transistors Scan PDF
    2N6058 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N6058 General Electric 12A N-P-N monolithic darlington power transistor. - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N6058 LAMBDA Semiconductor Data Book V1 1988 Scan PDF
    2N6058 Mospec POWER TRANSISTORS(12A,150W) - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N6058 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6058 Motorola European Master Selection Guide 1986 Scan PDF
    2N6058 Motorola Power Transistor Selection Guide Scan PDF
    2N6058 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6058 Unknown Basic Transistor and Cross Reference Specification Scan PDF

    2N 6058 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: crimson semiconductor de" inc 2514096 CRIMSON SEMICONDUCTOR INC 99 D 0 0 3 3 5 D | asmmb T33-0/ EPITAXIAL BASE TO-3 continued NPN PNP Vc«o (V ) 2N 3716 2N 5873 2N 5874 2N 3792 2N 5871 2N 5872 10 0 /8 0 2N 5877 2N 5875 2N 5878 2N 5876 2N 6053 2N 6054 2N 6055


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    PDF T33-0/

    BU4060

    Abstract: BU409 2N5876 BD376 2n5b77 b0375 BD136 BD375 bu406d BU407D
    Text: CRIMSON S E M I C O N D U C T OR INC DE~| 2 5 1MCHfc. ODDOBBS 2514096 CRIMSON SEMICONDUCTOR INC . 99D 00335 T3S-o/ D EPITAXIAL BASH TO-3 continued NPN PNP 2N 3716 2N 5873 2N 5874 2N5877 2N5878 2N6055 2N 6056 2N 6057 2N 6058 2N 6059 2N3792 2N5871 2N5872 2N 5875


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    PDF 5S14D 33-O/ 2N3716 2N3792 2N5873 2N5871 2N5874 2N5872 2N5877 2N5875 BU4060 BU409 2N5876 BD376 2n5b77 b0375 BD136 BD375 bu406d BU407D

    BU406O

    Abstract: 2N5876 bu409
    Text: EPITAXIAL BASE TO-3 continued Vc»o (V ) V -1o lc (V ) (A ) <W) 1 0 0 /8 0 80 60 10 7 115 80 7 115 3 /2 35 0 .5 /4 35 0 .5 /4 60 10 150 20 80 80 150 2N 6053 2N 6054 60 80 60 80 10 8 100 20 750 8 100 2N 6050 60 60 12 2N6051 2N 6052 80 80 12 100 100 12 NPN


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    PDF 2N5871 2N6051 T0-220 BU406O 2N5876 bu409

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR PACKAG E PN P TO -3 T O -204A A T O -254A A sus VOLTS Ic (m ax) AM PS 2N 6050 60 12 2N 6051 80 2N 6052 D E V IC E TYPE ^C E O @ Ic/ VcE m in/m ax @ a /v l*FE VcE(sat) @ I c/I b V @ A /A C<f P (M H z)


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    PDF -254A -204A

    PNP 2SD

    Abstract: T1P61 2N3055 2N3055SD 2N3054 2N3439 2N3440 2N3713 BD224 2N3715
    Text: 1 SEMICONDUCTORS INC OTE D | fi!3bbSG 0D0DSÖ2 4 | Power Transistors •c D E V IC E Max v CEO M ax A v hFE M in / M a x <$ lç P O L A R IT Y Powered by ICminer.com A v CE sat M a x fti Iq V A »T M in p D (M a x) T C =25°C MHi W PACK­ AGE 2N 3054 2N 3055


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    PDF 2N3054 2N3055 2N3055SD 2N3439 2N3440 2N3713 2N3714 2N3715 2N3716 2N3740 PNP 2SD T1P61 BD224

    2N6059

    Abstract: 2N6051 2N6058 2N60S2 2N6052 DARLINGTON 3A 100V npn
    Text: A LAMBDA COMPLEMENTARY POWER DARLINGTONS 2N6051, 2N6052, 2N6058,2N6059 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK ‘ MAXIMUM RATINGS PA RA M ET ER Collector Emitter Voltage 2N6051, 2N6058 2N6052, 2N6059 Collector Base Voltage 2N 6 05 1, 2N6058 2N6052, 2N6059


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    PDF 2N6051, 2N6052, 2N6058 2N6059 2N6058, 2N6059 2N6052 2N6059) 2N6051 2N60S2 DARLINGTON 3A 100V npn

    TFK E 1024

    Abstract: No abstract text available
    Text: OEC 7 1992 1Meg X 4 Monolithic DRAM molate MDM41000-80/10/12 Issue 3.1 : D ecem ber 1992 S e m ic o n d u c to r inc. Pin Definition Package Type: 1,048,576 X 4 CMOS High Speed Dynamic RAM Features A0 C 2n 3 0 4 q 5 c c r u L A1 7 A2 8 A3 9 Vcc 10 DO Row Access Time of 80,100,120 ns


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    PDF MDM41000-80/10/12 MIL-STD-883 TFK E 1024

    BUX 127

    Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
    Text: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B


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    PDF BD244B BD379 BD380 BD434 BD435 BD440 BD681 BD682 BD712 BD905 BUX 127 bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    triac zd 607

    Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
    Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published


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    PDF thT404 ZV15A ZY33A ZT696 ZV15B ZY33B ZT697 ZT706 ZV27A ZY62A triac zd 607 hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    HBF4727A

    Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
    Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product


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    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    RCA-2N6050

    Abstract: n6050 2N60S
    Text: 3875081 6 E SOLID STATE Ql DE | 3fl?SDfil □□17E3Q □ 1~ T~ 3 3 - ?3 Darlington Power = _ 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere Complementary P-N-P and N-P-N Monolithic


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    PDF 17E3Q 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere RCA-2N6050 n6050 2N60S

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    2N 6058

    Abstract: No abstract text available
    Text: 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 File Number 12-Ampere Complementary P-N-P and N-P-N Monolithic Darlington Power Transistors 1185 TERM INAL DESIGNATIONS c 60-80-100 Volts, 150 Watts Gain of 7000 Typ. at 5 A (2N6050, 2N6051, 2N6052) Gain of 4000 (Typ.) at 5 A (2N6057, 2N6058, 2N6059)


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    PDF 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere 2N6052) 2N 6058

    500 watts audio amplifiers schematic diagram

    Abstract: 2N6057 rca 2N6061 2N6050 2N60S0 31715 2N6051 2N6052 2N6058 2N6059
    Text: 3875081 G E SOLID STATE 01 DE | 3ß?SDfil □□17E3Q □ 1~ T ~ 33- 1 3 Darlington Power = _ 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere Complementary P-N-P and N-P-N Monolithic


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    PDF 17E3Q 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere 500 watts audio amplifiers schematic diagram 2N6057 rca 2N6061 2N6050 2N60S0 31715 2N6051 2N6052 2N6058

    Untitled

    Abstract: No abstract text available
    Text: r z 7 SGS-THOMSON “ 7# [MO MHLi(m]»KS 2N6050/51/52 2N6057/58/59 COMPLEMENTARY DARLINGTON • HIGH GAIN ■ HIGH CURRENT ■ HIGH DISSIPATION DESCRIPTION The 2N6050, 2N6051 and 2N6052 are silicon epi­ taxial base PNP transistors in monolithic Darlington


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    PDF 2N6050/51/52 2N6057/58/59 2N6050, 2N6051 2N6052 2N6057, 2N6058 2N6059

    TRANSISTOR tip122 CHN 949

    Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
    Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.


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    PDF 38v01 TRANSISTOR tip122 CHN 949 E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175

    1N5160

    Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
    Text: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A


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    PDF 1N5000 1N5001 1N5002 1N5003 1N5149 1N5150 1N5153 1N5155 1N5158 1N5159 1N5160 MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt

    in5388

    Abstract: 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic
    Text: THE SEMICONDUCTOR DATA LIBRARY r*^r* fe SER IES A V O LU M E II i«»* »^ 'i1? prepared by Technicallnformation Center The inform ation in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this inform ation does not convey to the purchaser of semiconductor


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    PDF plu300 in5388 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    2N6059

    Abstract: 2N6050 2N6057 2N6051 2N6052 2N6058 2n6052 sgs N6050 SGS transistors n6052
    Text: « SGS-THOMSON WM RflDeœillLiO'irifiiOlsaDOS 2N6050/51/52 2N6057/58/59 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . 2N6050, 2N6052, 2N6057 AND 2N6059 ARE SGS-THOMSON PREFERRED SALESTYPES . HIGH GAIN . HIGH CURRENT . HIGH DISSIPATION DESCRIPTION The 2N6050, 2N6051 and 2N6052 are silicon


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    PDF 2N6050/51/52 2N6057/58/59 2N6050, 2N6052, 2N6057 2N6059 2N6051 2N6052 2N6057, 2N6050 2N6058 2n6052 sgs N6050 SGS transistors n6052

    Germanium drift transistor

    Abstract: 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor
    Text: POWER DATA BOOK FAIRCHILD 464 Ellis Street, Mountain View, California 94042 1976 Fairchild Camera and Instrum ent C orporation/464 Ellis Street, M ountain View, California 940 4 2 / 4 15 9 6 2 -5 0 1 1/TW X 910 -3 7 9-6 4 3 5 INTRODUCTION You, the customer, and your needs have dictated the form at and contents of


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    PDF orporation/464 CH-8105 Germanium drift transistor 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor