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    2M X 18 Search Results

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    2M X 18 Price and Stock

    onsemi NCV8152MX180280TCG

    IC REG LINEAR 1.8V/2.8V 6XDFN
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    DigiKey NCV8152MX180280TCG Digi-Reel 39,530 1
    • 1 $0.99
    • 10 $0.598
    • 100 $0.3802
    • 1000 $0.25881
    • 10000 $0.22718
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    NCV8152MX180280TCG Cut Tape 39,530 1
    • 1 $0.99
    • 10 $0.598
    • 100 $0.3802
    • 1000 $0.25881
    • 10000 $0.22718
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    NCV8152MX180280TCG Reel 35,000 5,000
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    Avnet Americas NCV8152MX180280TCG Reel 15 Weeks 15,000
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    Newark NCV8152MX180280TCG Reel 5,000
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    Avnet Asia NCV8152MX180280TCG 15 Weeks 15,000
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    Avnet Silica NCV8152MX180280TCG 16 Weeks 5,000
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    EBV Elektronik NCV8152MX180280TCG 17 Weeks 5,000
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    onsemi NCP702MX18TCG

    IC REG LINEAR 1.8V 200MA 6XDFN
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    DigiKey NCP702MX18TCG Digi-Reel 110 1
    • 1 $1.56
    • 10 $0.959
    • 100 $0.6246
    • 1000 $0.6246
    • 10000 $0.6246
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    NCP702MX18TCG Cut Tape 110 1
    • 1 $1.56
    • 10 $0.959
    • 100 $0.6246
    • 1000 $0.6246
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    NCP702MX18TCG Reel
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    RS NCP702MX18TCG Bulk 1
    • 1 $0.587
    • 10 $0.557
    • 100 $0.499
    • 1000 $0.499
    • 10000 $0.499
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    Rochester Electronics NCP702MX18TCG 108,590 1
    • 1 $0.3983
    • 10 $0.3983
    • 100 $0.3744
    • 1000 $0.3386
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    Flip Electronics NCP702MX18TCG 2,029
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    onsemi NCV8702MX18TCG

    IC REG LINEAR 1.8V 200MA 6XDFN
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    DigiKey NCV8702MX18TCG Reel 3,000
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    Bristol Electronics NCV8702MX18TCG 2,980
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    Rochester Electronics NCV8702MX18TCG 1
    • 1 $0.6694
    • 10 $0.6694
    • 100 $0.6292
    • 1000 $0.569
    • 10000 $0.569
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    onsemi NCP152MX180180TCG

    LDO REGULATOR, 150 MA, DUAL OUTP
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    DigiKey NCP152MX180180TCG Bulk
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    onsemi NCP702MX18TCGEVB

    EVAL BOARD FOR NCP702
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NCP702MX18TCGEVB Box 1
    • 1 $48.53
    • 10 $48.53
    • 100 $48.53
    • 1000 $48.53
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    Avnet Americas NCP702MX18TCGEVB Bulk 14
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    • 100 $43.44839
    • 1000 $42.00011
    • 10000 $42.00011
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    Newark NCP702MX18TCGEVB Bulk 4
    • 1 $49.14
    • 10 $49.14
    • 100 $49.14
    • 1000 $49.14
    • 10000 $49.14
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    2M X 18 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HYS64V2100G

    Abstract: No abstract text available
    Text: 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module HYS64V2100G C U-10 HYS72V2100G(C)U-10 168 pin unbuffered DIMM Modules Advanced Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module • 1 bank 2M x 64, 2M x 72 organisation


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    PDF 64-Bit 72-Bit HYS64V2100G HYS72V2100G DM168-27 HYS64 V2100G L-DIM-168-C1 DM168-C1

    HYS64V2100G

    Abstract: No abstract text available
    Text: 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module HYS64V2100G C U-10 HYS72V2100G(C)U-10 168 pin unbuffered DIMM Modules • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module for PC main memory applications • 1 bank 2M x 64, 2M x 72 organisation


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    PDF 64-Bit 72-Bit HYS64V2100G HYS72V2100G DM168-27 HYS64 V2100G L-DIM-168-C1 DM168-C1

    Untitled

    Abstract: No abstract text available
    Text: TS 35 x 7,5 terminal rail W 7,5 mm Terminal rails TS 35 x 7.5 Unperforated Material thickness Length 1 mm 2m Qty. 2m Order No. 0330800000 1 mm TS 35X7.5 1M/ST/ZN 16 mm2 1 mm 2m 2m 0383400000 1m 10 m 0383410000 Stainless steel TS 35X7.5 2M/CRN 16 mm2 1 mm 2m


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    PDF 2M/ST/Z848290000 35X15 35X15/LL 35X15LL/5 35X15/LL/6x18 35X15/LL/6x25

    4MX72 BIT SDRAM

    Abstract: VS47217801BTGE VS2721
    Text: VS27217801BTGE,VS47217801BTGE 2M,4MX72-Bit SDRAM Module VIS Description The VS27217801BTGE and VS47217801BTGE are 2M x 72 - bit and 4M x 72 - bit dual - in - line synchronous dynamic RAM module DIMM . It is mounted with 9/18 pieces of 2M x 8 synchronous DRAM(VG3617801BT), and each in a standard 44 pin TSOP package. The VS27217801BTGE and


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    PDF VS27217801BTGE VS47217801BTGE 4MX72-Bit VG3617801BT) VS27217801BTGE, VS47217801BTGE 4MX72 BIT SDRAM VS2721

    Untitled

    Abstract: No abstract text available
    Text: CY7C1317BV18 CY7C1319BV18 CY7C1321BV18 PRELIMINARY 18-Mbit DDR-II SRAM 4-Word Burst Architecture Features Functional Description • 18-Mbit density 2M x 8, 2M x 9, 1M x 18, 512K x 36 The CY7C1317BV18, CY7C1917BV18, CY7C1319BV18, and CY7C1321BV18 are 1.8V Synchronous Pipelined SRAM


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    PDF CY7C1317BV18 CY7C1319BV18 CY7C1321BV18 18-Mbit 300-MHz 600MHz) CY7C1917BV18 BB165E

    Untitled

    Abstract: No abstract text available
    Text: CY7C11461KV18, CY7C11571KV18 CY7C11481KV18, CY7C11501KV18 18-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.0 Cycle Read Latency Features Functional Description • 18-Mbit Density (2M x 8, 2M x 9, 1M x 18, 512K x 36) ■ 450 MHz Clock for High Bandwidth


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    PDF CY7C11461KV18, CY7C11571KV18 CY7C11481KV18, CY7C11501KV18 18-Mbit CY7C11571KV18, CY7C11501KV18 CY7C11461KV18)

    Untitled

    Abstract: No abstract text available
    Text: CY7C11661KV18, CY7C11771KV18 CY7C11681KV18, CY7C11701KV18 18-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.5 Cycle Read Latency Features Functional Description • 18-Mbit Density (2M x 8, 2M x 9, 1M x 18, 512K x 36) ■ 550 MHz Clock for High Bandwidth


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    PDF CY7C11661KV18, CY7C11771KV18 CY7C11681KV18, CY7C11701KV18 18-Mbit CY7C11771KV18, CY7C11701KV18 CY7C11661KV18)

    CY7C11681KV18

    Abstract: 3M Touch Systems
    Text: CY7C11661KV18, CY7C11771KV18 CY7C11681KV18, CY7C11701KV18 18-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.5 Cycle Read Latency Features Functional Description • 18-Mbit Density (2M x 8, 2M x 9, 1M x 18, 512K x 36) ■ 550 MHz Clock for High Bandwidth


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    PDF CY7C11661KV18, CY7C11771KV18 CY7C11681KV18, CY7C11701KV18 18-Mbit CY7C11681KV18 3M Touch Systems

    IS61LPS204836B-200TQ

    Abstract: IS61VVPS204836B-166B3L
    Text: IS61LPS409618B, IS61LPS204836B, IS61LPS204832B, IS64LPS204836B, IS61VPS/VVPS409618B, IS61VPS/VVPS204836B 2M x 36, 2M x 32, 4M x 18 72 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM ADVANCED INFORMATION OCTOBER 2012 FEATURES DESCRIPTION • Internal self-timed write cycle


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    PDF IS61LPS409618B, IS61LPS204836B, IS61LPS204832B, IS64LPS204836B, IS61VPS/VVPS409618B, IS61VPS/VVPS204836B MS-028 IS61LPS204836B-200TQ IS61VVPS204836B-166B3L

    IBM0117800B2M

    Abstract: IBM0117800P2M
    Text: IBM0117800 2M x 811/10, 5.0V. IBM0117800P2M x 811/10, 3.3V, LP, SR. IBM0117800M 2M x 811/10, 5.0V, LP, SR. IBM0117800B2M x 811/10, 3.3V. IBM0117800 IBM0117800M IBM0117800B IBM0117800P 2M x 8 11/10 DRAM Features • 2,097,152 word by 8 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply


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    PDF IBM0117800 IBM0117800P2M IBM0117800M IBM0117800B2M IBM0117800M IBM0117800B IBM0117800P

    Untitled

    Abstract: No abstract text available
    Text: CY7C11461KV18, CY7C11571KV18 CY7C11481KV18, CY7C11501KV18 18-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.0 Cycle Read Latency Features Functional Description • 18-Mbit Density (2M x 8, 2M x 9, 1M x 18, 512K x 36) ■ 450 MHz Clock for High Bandwidth


    Original
    PDF CY7C11461KV18, CY7C11571KV18 CY7C11481KV18, CY7C11501KV18 18-Mbit CY7C11571KV18, CY7C11501KV18 CY7C11461KV18)

    Untitled

    Abstract: No abstract text available
    Text: CY7C11661KV18, CY7C11771KV18 CY7C11681KV18, CY7C11701KV18 18-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.5 Cycle Read Latency Features Functional Description • 18-Mbit Density (2M x 8, 2M x 9, 1M x 18, 512K x 36) ■ 550 MHz Clock for High Bandwidth


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    PDF CY7C11661KV18, CY7C11771KV18 CY7C11681KV18, CY7C11701KV18 18-Mbit CY7C11771KV18, CY7C11701KV18 CY7C11661KV18)

    CY7C1317BV18

    Abstract: CY7C1319BV18 CY7C1321BV18 CY7C1917BV18
    Text: CY7C1317BV18 CY7C1917BV18 CY7C1319BV18 CY7C1321BV18 18-Mbit DDR-II SRAM 4-Word Burst Architecture Features Functional Description • 18-Mbit density 2M x 8, 2M x 9, 1M x 18, 512K x 36 The CY7C1317BV18, CY7C1917BV18, CY7C1319BV18, and CY7C1321BV18 are 1.8V Synchronous Pipelined SRAM


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    PDF CY7C1317BV18 CY7C1917BV18 CY7C1319BV18 CY7C1321BV18 18-Mbit CY7C1317BV18, CY7C1917BV18, CY7C1319BV18, CY7C1321BV18 CY7C1317BV18 CY7C1319BV18 CY7C1917BV18

    IS61LPS204832B

    Abstract: No abstract text available
    Text: IS61LPS409618B, IS61LPS204836B, IS61LPS204832B, IS64LPS204836B, IS61VPS/VVPS409618B, IS61VPS/VVPS204836B 2M x 36, 2M x 32, 4M x 18 72 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM ADVANCED INFORMATION FEBRUARY 2013 FEATURES DESCRIPTION • Internal self-timed write cycle


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    PDF IS61LPS409618B, IS61LPS204836B, IS61LPS204832B, IS64LPS204836B, IS61VPS/VVPS409618B, IS61VPS/VVPS204836B VS61LPS204836B, IS61LPS204832B

    IBM0117800B2M

    Abstract: IBM0117800P2M
    Text: IBM0117800 2M x 811/10, 5.0V. IBM0117800P2M x 811/10, 3.3V, LP, SR. IBM0117800M 2M x 811/10, 5.0V, LP, SR. IBM0117800B2M x 811/10, 3.3V. IBM0117800 IBM0117800M IBM0117800B IBM0117800P 2M x 8 11/10 DRAM Features • 2,097,152 word by 8 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply


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    PDF IBM0117800 IBM0117800P2M IBM0117800M IBM0117800B2M IBM0117800M IBM0117800B IBM0117800P

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module HYS64V2000GU HYS72V2000GU 168 pin unbuffered DIMM Modules Preliminary Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module • 1 bank 2M x 64, 2M x 72 organisation


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    PDF 64-Bit 72-Bit HYS64V2000GU HYS72V2000GU HYS64 V2000GU

    doz 112

    Abstract: V2000G 235L
    Text: SIEM EN S 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module HYS64V2000GU HYS72V2000GU 168 pin unbuffered DIMM Modules Prelim inary Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module • 1 bank 2M x 64, 2M x 72 organisation


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    PDF 64-Bit HYS64V2000GU 72-Bit HYS72V2000GU 0235bD5 V2000G 235b05 doz 112 235L

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module HYS64V2000GU HYS72V2000GU 168 pin unbuffered DIMM Modules Prelim inary Inform ation • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module • 1 bank 2M x 64, 2M x 72 organisation


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    PDF 64-Bit 72-Bit HYS64V2000GU HYS72V2000GU HYS64 V2000GU 91X127 QLD06877

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module HYS64V2100G C U-10 HYS72V2100G(C)U-10 168 pin unbuffered DIMM Modules Advanced Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module • 1 bank 2M x 64, 2M x 72 organisation


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    PDF 64-Bit 72-Bit HYS64V2100G HYS72V2100G 19-2S HYS64 V2100G 535bGS I1524Ã

    KM49RC2H-A60

    Abstract: RDRAM CONCURRENT KM49RC2H samsung datecode samsung concurrent rdram RC2H-A66 concurrent RDRAM 72 9 concurrent rdram
    Text: KM48RC2H/KM49RC2H Concurrent RDRAM 2M X 8 / 2 M x 9 Concurrent RDRAM Overview Ordering Information The 16 / 18Mbit Concurrent Rambus DRAMs RDRAM are Part No. Org. frequency KM49RC2H-A60 2M X 9 600Mhz extremely high-speed CMOS DRAMs organized as 2M words


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    PDF KM48RC2H/KM49RC2H 18Mbit 667MHz SHP-32 KM49RC2H-A60 RDRAM CONCURRENT KM49RC2H samsung datecode samsung concurrent rdram RC2H-A66 concurrent RDRAM 72 9 concurrent rdram

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module HYS64V2100G C U-10 HYS72V2100G(C)U-10 168 pin unbuffered DIMM Modules * 168 Pin JED EC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module for PC main memory applications * 1 bank 2M x 64, 2M x 72 organisation


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    PDF 64-Bit 72-Bit HYS64V2100G HYS72V2100G L-DIM-168-27 DM168-27 HYS64 V2100G L-DIM-168-C1 DM168-C1

    s2mX

    Abstract: No abstract text available
    Text: 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module HYS64V2000GU HYS72V2000GU 168 pin unbuffered DIMM Modules Advanced Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module • 1 bank 2M x 64, 2M x 72 organisation • Optimized for byte-write non-parity or ECC applications


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    PDF 64-Bit 72-Bit HYS64V2000GU HYS72V2000GU HYS64 V2000GU s2mX

    Untitled

    Abstract: No abstract text available
    Text: STI322000D1 -xxV 72-PIN DIMMS 2M X 32 DRAM DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI322000D1 is a 2M bits x 32 Dynamic RAM high density memory module. The Simple Technology STI322000D1 consist of four CMOS 2M x 8 DRAMs in 28-pin


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    PDF STI322000D1 STI322000D1-60 STI322000D1-80V 110ns 130ns 150ns 72-PIN

    Untitled

    Abstract: No abstract text available
    Text: KM29V16000ATS ELECTRO NICS Flash 2M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION FEATURES • Single 3.3 - volt Supply The KM29V16000ATS/RS is a 2M 2,097,152 x8 bit NAND • Organization - Memory Cell Array : (2M +64K)bit x 8bit - Data Register : (256 + 8)bit x 8bit


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    PDF KM29V16000ATS KM29V16000ATS/RS 264-byte 250ps -TSOP2-400F -TSOP2-400R 0031flfll