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    2L SMD TRANSISTOR Search Results

    2L SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2L SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2L smd transistor

    Abstract: CMBT5401 TRANSISTOR SMD MARKING 2l smd 2l
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


    Original     		PDF ISO/TS16949 OT-23 CMBT5401 C-120 2L smd transistor CMBT5401 TRANSISTOR SMD MARKING 2l smd 2l

    2L smd transistor

    Abstract: MARKING SMD pnp TRANSISTOR ec smd transistor 2l TRANSISTOR SMD MARKING 2l ts 4141 TRANSISTOR smd CMBT5401 2L smd Device marking 160
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR


    Original     		PDF OT-23 CMBT5401 C-120 2L smd transistor MARKING SMD pnp TRANSISTOR ec smd transistor 2l TRANSISTOR SMD MARKING 2l ts 4141 TRANSISTOR smd CMBT5401 2L smd Device marking 160

    2L smd transistor

    Abstract: TRANSISTOR SMD MARKING 2l smd transistor 2l CMBT5401
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		PDF OT-23 CMBT5401 C-120 2L smd transistor TRANSISTOR SMD MARKING 2l smd transistor 2l CMBT5401

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transisto r Marking CMBT5401 = 2L Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR


    Original     		PDF OT-23 CMBT5401 C-120

    Untitled

    Abstract: No abstract text available
    Text: SMD High Voltage Transistors Part No. MMBT5550 MMBT5551 MMBTA42 MMBT6517 MMBT5400 MMBT5401 MMBTA92 MMBT6520 20070515 Device VCEO Marking Polarity Code V 1F 140 G1 160 NPN 1D 300 1Z 350 K2 120 2L 150 PNP 2D 300 2Z 350 hFE @ VCE & IC IC (A) 0.6 0.6 0.5 0.5


    Original     		PDF MMBT5550 MMBT5551 MMBTA42 MMBT6517 MMBT5400 MMBT5401 MMBTA92 MMBT6520

    Untitled

    Abstract: No abstract text available
    Text: SMD High Voltage Transistors Part No. MMBT5550 MMBT5551 MMBTA42 MMBT6517 MMBT5400 MMBT5401 MMBTA92 MMBT6520 20080612 Device VCEO Marking Polarity Code V 1F 140 G1 160 NPN 1D 300 1Z 350 K2 120 2L 150 PNP 2D 300 2Z 350 hFE @ VCE & IC IC (A) 0.6 0.6 0.5 0.5


    Original     		PDF MMBT5550 MMBT5551 MMBTA42 MMBT6517 MMBT5400 MMBT5401 MMBTA92 MMBT6520

    2L smd transistor

    Abstract: 2l TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 2l TRANSISTOR SMD MARKING 2l smd transistor 2l MMBT5401-G SMD MARKING CODE 2L TRANSISTOR SMD MARKING CODE PD smd code 2l transistor smd 2l
    Text: COMCHIP General Purpose Transistor SMD Diodes Specialist MMBT5401-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching. 0.119(3.00) 0.110(2.80)


    Original     		PDF MMBT5401-G OT-23 MMBT5551-G) QW-BTR18 2L smd transistor 2l TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 2l TRANSISTOR SMD MARKING 2l smd transistor 2l MMBT5401-G SMD MARKING CODE 2L TRANSISTOR SMD MARKING CODE PD smd code 2l transistor smd 2l

    2L smd transistor

    Abstract: No abstract text available
    Text: Transistors Transistor T SMD Type Product specification KMBT5401 MMBT5401 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 High Voltage Transistors 0.4 3 1 0.55 Pb-Free Packages are Available 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1


    Original     		PDF KMBT5401 MMBT5401) OT-23 -10mA 30MHz 2L smd transistor

    smd 2l

    Abstract: 2L SOT-23 MMBT5401 KMBT5401 smd .2L ic smd MARKING
    Text: Transistors SMD Type PNP Transistors KMBT5401 MMBT5401 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 High Voltage Transistors 0.4 3 1 0.55 Pb-Free Packages are Available 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1


    Original     		PDF KMBT5401 MMBT5401) OT-23 -10mA 30MHz smd 2l 2L SOT-23 MMBT5401 smd .2L ic smd MARKING

    COIL metal detector schematic

    Abstract: SMD HF transistor transistor smd CF rs smd transistor NF NV SMD TRANSISTOR B82462-4683K TDE0160 TDE0160FP electronic schematic SMD TRANSISTOR ALL 04
    Text: STEVAL-IFS004V1 Metal body proximity detector based on the TDE0160 Data Brief Features • Supply voltage: +4 V to +36 V ■ Supply current: <1.2 mA ■ Loss resistance: 5 kΩ to 50 kΩ ■ Oscillator frequency: <1 MHz ■ Output transistor: IC= 20 mA, VCE sat < 1.1 V


    Original     		PDF STEVAL-IFS004V1 TDE0160 TDE0160, COIL metal detector schematic SMD HF transistor transistor smd CF rs smd transistor NF NV SMD TRANSISTOR B82462-4683K TDE0160 TDE0160FP electronic schematic SMD TRANSISTOR ALL 04

    2L smd transistor

    Abstract: SMD TRANSISTOR MARKING 037 smd transistor 079 TRANSISTOR SMD catalog catalog transistors smd transistors list SMD TRANSISTOR MARKING 079 SMD TRANSISTOR br-37 bipolar transistors catalog smd transistor 2l
    Text: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Small Signal Bipolar Transistors > Part Number MMBT5401 product family SOT-23 Plastic-Encapsulate Biploar Transistors


    Original     		PDF MMBT5401 OT-23 600mA 300mW 100MHz 2L smd transistor SMD TRANSISTOR MARKING 037 smd transistor 079 TRANSISTOR SMD catalog catalog transistors smd transistors list SMD TRANSISTOR MARKING 079 SMD TRANSISTOR br-37 bipolar transistors catalog smd transistor 2l

    Untitled

    Abstract: No abstract text available
    Text: STEVAL-IFS004V1 Metal body proximity detector based on the TDE0160 Data Brief Features • Supply voltage: +4 V to +36 V ■ Supply current: <1.2 mA ■ Loss resistance: 5 kΩ to 50 kΩ ■ Oscillator frequency: <1 MHz ■ Output transistor: IC= 20 mA, VCE sat < 1.1 V


    Original     		PDF STEVAL-IFS004V1 TDE0160 TDE0160,

    PMDS R7 DIODE

    Abstract: C1608JB1H102K Sanyo SMD L1 smd p-ch mosfet RR0816P203D 2L smd transistor C1608JB1H104K MB39A104 RB053L-30 TPC8102
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-71105-1E ASSP for Power Supply Applications Evaluation Board MB39A104 • DESCRIPTION The MB39A104 evaluation board is a surface mount circuit board with 2 channels of down conversion circuit.Because output voltage set 5 V and 3.3 V, the current of Max 3 A is supplied from the power-supply voltage between


    Original     		PDF DS04-71105-1E MB39A104 MB39A104 F0307 PMDS R7 DIODE C1608JB1H102K Sanyo SMD L1 smd p-ch mosfet RR0816P203D 2L smd transistor C1608JB1H104K RB053L-30 TPC8102

    c3207

    Abstract: 20SVP10M c17f FUJITSU mosfet PMDS R7 PMDS R7 DIODE 2N7002 2N7002E C1608CH1H101J CDRH104R-150
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS04-71105-1Ea ASSP for Power Supply Applications Evaluation Board MB39A104 • DESCRIPTION The MB39A104 evaluation board is a surface mount circuit board with 2 channels of down conversion circuit.Because output voltage set 5 V and 3.3 V, the current of Max 3 A is supplied from the power-supply voltage between


    Original     		PDF DS04-71105-1Ea MB39A104 MB39A104 c3207 20SVP10M c17f FUJITSU mosfet PMDS R7 PMDS R7 DIODE 2N7002 2N7002E C1608CH1H101J CDRH104R-150

    DocID2143 Rev 33

    Abstract: No abstract text available
    Text: L78 Positive voltage regulator ICs Datasheet - production data Description The L78 series of three-terminal positive regulators is available in TO-220, TO-220FP, D²PAK and DPAK packages and several fixed output voltages, making it useful in a wide range of applications.


    Original     		PDF O-220, O-220FP, O-220 DocID2143 DocID2143 Rev 33

    c25 rectifier

    Abstract: 6SVP150M C1608JB1H104K IRF7901D1 MB3889 MB39A106
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-71107-1E ASSP for Power Supply Applications Evaluation Board MB39A106 • DESCRIPTION The MB39A106 evaluation board is a surface mount circuit board with two channels of down conversion circuit. The output voltage is internally set to 5.0 V and 3.3 V. The maximum current 3.0 A is supplied from the power supply voltage


    Original     		PDF DS04-71107-1E MB39A106 MB39A106 F0310 c25 rectifier 6SVP150M C1608JB1H104K IRF7901D1 MB3889

    C1608JB1H104K

    Abstract: 6SVP150M C3216JB1A475 IRF7901D1 MB3889 RB495D RR0816P-133-D c2682 fetky 359 C1608JB1H223K
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-71106-1E ASSP for Power Supply Applications Evaluation Board MB3889 • DESCRIPTION The MB3889 evaluation board is a surface mount circuit board with two channels of down conversion circuit. Output voltage is set to 5 V, 3.3 V internally and the maximum current 3 A is supplied from power supply voltage


    Original     		PDF DS04-71106-1E MB3889 MB3889 F0310 C1608JB1H104K 6SVP150M C3216JB1A475 IRF7901D1 RB495D RR0816P-133-D c2682 fetky 359 C1608JB1H223K

    6SVP150M

    Abstract: C1608JB1H104K IRF7901D1 MB3889 RB495D c2682
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS04-71106-1Ea ASSP for Power Supply Applications Evaluation Board MB3889 • DESCRIPTION The MB3889 evaluation board is a surface mount circuit board with two channels of down conversion circuit. Output voltage is set to 5 V, 3.3 V internally and the maximum current 3 A is supplied from power supply voltage


    Original     		PDF DS04-71106-1Ea MB3889 MB3889 6SVP150M C1608JB1H104K IRF7901D1 RB495D c2682

    C1608JB1H104K

    Abstract: 6SVP150M MB39A106 2L smd transistor IRF7901D1 MB3889 WT21 transistor C4C k diode sg 5 ts C7A smd
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS04-71107-1Ea ASSP for Power Supply Applications Evaluation Board MB39A106 • DESCRIPTION The MB39A106 evaluation board is a surface mount circuit board with two channels of down conversion circuit. The output voltage is internally set to 5.0 V and 3.3 V. The maximum current 3.0 A is supplied from the power supply voltage


    Original     		PDF DS04-71107-1Ea MB39A106 MB39A106 C1608JB1H104K 6SVP150M 2L smd transistor IRF7901D1 MB3889 WT21 transistor C4C k diode sg 5 ts C7A smd

    9288X

    Abstract: DA ry SMD transistor transistors smd dal SW11 Q67101-H5083 smd transistor GY QUARTZ 20,25 MHZ TRANSISTOR gy 740 SDA9288X Siemens SDA 9288X
    Text: General Information Contents Introduction. 5 1 Features . 7


    Original     		PDF 9288X P-DSO-32-2 9288X DA ry SMD transistor transistors smd dal SW11 Q67101-H5083 smd transistor GY QUARTZ 20,25 MHZ TRANSISTOR gy 740 SDA9288X Siemens SDA 9288X

    w1p npn

    Abstract: SOT23 W1P SOT-23 marking r1p SMD MARKING CODE v3p SMD sot23 marking E6 w1p 60 "W1P" w1p 73 MARKING W1P SMD W1P
    Text: 11 W id eb an d SMD Transistors Wideband SMD® Transistors Description Mechanical Data Philips Components wideband transistors are the result of leading-edge technology dedicated to expanding perfor­ mance and selection in the wideband arena. The devices are


    OCR Scan     		PDF OT-223 priFS17 BFS17A BFT25 BFT92 BFT93 OT-23 OT-89 OT-143 OT-223 w1p npn SOT23 W1P SOT-23 marking r1p SMD MARKING CODE v3p SMD sot23 marking E6 w1p 60 "W1P" w1p 73 MARKING W1P SMD W1P

    SOT89 MARKING 2E

    Abstract: SOT89 MARKING 2d marking codes transistors sot-223 SOT-23 MARKING T36 bt1 marking DA SOT-89 df SOT-223 DA SOT-89 NPN MARKING 2D SOT-89 PMBT5551
    Text: HIGH VOLTAGE SMI TRANSISTORS DESCRIPTION • Philips Components produces a variety o f chip geometries in order to offer high voltage transistors w ith a broad range of current handling capabilities. The result is a device which not only fulfills high voltage application


    OCR Scan     		PDF OT-89 OT-223 BF821 BF822 BF823 BSP16 BSP20 BSR19 BSR19A BSR20 SOT89 MARKING 2E SOT89 MARKING 2d marking codes transistors sot-223 SOT-23 MARKING T36 bt1 marking DA SOT-89 df SOT-223 DA SOT-89 NPN MARKING 2D SOT-89 PMBT5551

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES BSH106 QUICK REFERENCE DATA SYMBOL d • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package V qs = 20 V


    OCR Scan     		PDF BSH106 BSH106 OT363 OT363

    ld smd transistor LD 33

    Abstract: BSH105N
    Text: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES BSH105 SYMBOL QUICK REFERENCE DATA • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package v ns = 20 V


    OCR Scan     		PDF BSH105 BSH105 ld smd transistor LD 33 BSH105N