2GM TRANSISTOR 6 Search Results

2GM TRANSISTOR 6 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

2GM TRANSISTOR 6 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA56 TRANSISTOR PNP SOT–23 FEATURES  General Purpose Amplifier Applications MARKING: 2GM 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	OT-23 MMBTA56 -10mA -100mA -100mA, 100MHz	PDF
2gm transistor Abstract: ota amplifier Modulation using OTA AB-180 OPA622 OPA660 Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132	Original	OPA660 OPA622 2gm transistor ota amplifier Modulation using OTA AB-180	PDF
2GM sot-23 transistor Abstract: transistor MARKING 560 pnp sot23 TS560 marking 2GM 2GM TRANSISTOR Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT MMBTA56 Small Signal Transistors PNP SOT-23 FEATURES t PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. t As complementary type, the NPN transistor MMBTA06 is recommended. t This transistor is also available in the	Original	MMBTA56 OT-23 MMBTA06 MPSA56. OT-23 2GM sot-23 transistor transistor MARKING 560 pnp sot23 TS560 marking 2GM 2GM TRANSISTOR	PDF
2gm transistor Abstract: vishay TRANSISTOR Sot-23 MARKING CODE 2GM sot-23 transistor 2GM sot marking code 2GM marking 2GM marking codes sot-23 2GM 20FEB02 Text: MMBTA56 Vishay Semiconductors formerly General Semiconductor Small Signal Transistor PNP TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View Mounting Pad Layout .056 (1.43) .052 (1.33) 3 .016 (0.4) Pin Configuration 1 = Base 2 = Emitter 3 = Collector	Original	MMBTA56 O-236AB OT-23) MMBTA06 100mA 100mA, 100mA 100MHz 2gm transistor vishay TRANSISTOR Sot-23 MARKING CODE 2GM sot-23 transistor 2GM sot marking code 2GM marking 2GM marking codes sot-23 2GM 20FEB02	PDF
MPSa56 equivalent Abstract: transistor MARKING 560 pnp sot23 2gm transistor Text: MMBTA56 Small Signal Transistor PNP TO-263AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 t c u rod P New .016 (0.4) Pin Configuration 1 = Base 2 = Emitter 3 = Collector .016 (0.4) 0.079 (2.0) .007 (0.175) .005 (0.125) max. .004 (0.1)	Original	MMBTA56 O-263AB OT-23) OT-23 E8/10K MPSa56 equivalent transistor MARKING 560 pnp sot23 2gm transistor	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA55LT1 MMBTA56LT1 TRANSISTOR（ PNP ） SOT—23 1. BASE 2. EMITTER 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.225 W（Tamb=25℃） Collector current	Original	OT-23 MMBTA55LT1 MMBTA56LT1 MMBTA55: MMBTA56: MMBTA55 MMBTA56 MMBTA56LT1:	PDF
MMBTA55 Abstract: MMBTA55 MMBTA56 2gm transistor 6 MMBTA56 2gm transistor 2GM H transistor 2GM sot-23 transistor Text: MMBTA55 / MMBTA56 PNP Silicon Elektronische Bauelemente Driver Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 SOT-23 3 A 1 L 2 3 C OLLE C TOR 3 B S Top View 1 V 2 G 1 B AS E C 2 E MIT T E R D H K J Dim Min Max A 2.800	Original	MMBTA55 MMBTA56 OT-23 01-Jun-2002 MMBTA55 MMBTA56 2gm transistor 6 MMBTA56 2gm transistor 2GM H transistor 2GM sot-23 transistor	PDF
IN6263 Abstract: AGC OPA660 R2M 45 2N2907 OPA1013 OPA660 OPA660AP OPA660AU REF200 sbos007 Text: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION	Original	OPA660 850MHz OPA660 IN6263 AGC OPA660 R2M 45 2N2907 OPA1013 OPA660AP OPA660AU REF200 sbos007	PDF
AGC OPA660 Abstract: in6263 transconductance amplifier spice spice model 1n4148 DMF3068A operational amplifier discrete schematic 1n4148 spice model Group-Delay phase filter OTA operational transconductance amplifier pin configuration transistor 2n2907 Text: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION	Original	OPA660 850MHz OPA660 470pF 470pF 1N4007 AGC OPA660 in6263 transconductance amplifier spice spice model 1n4148 DMF3068A operational amplifier discrete schematic 1n4148 spice model Group-Delay phase filter OTA operational transconductance amplifier pin configuration transistor 2n2907	PDF
in6263 Abstract: coil gold detector circuit diagram OPA660 R2M diode transconductance amplifier spice OPA660AU REF200 2N2907 BUF601 OPA1013 Text: OPA 660 OPA660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● HIGH SLEW RATE: 3000V/µs ● VIDEO/BROADCAST EQUIPMENT ● COMMUNICATIONS EQUIPMENT ● LOW DIFFERENTIAL GAIN/PHASE	Original	OPA660 850MHz OPA660 660-1GC 470pF 470pF 1N4007 in6263 coil gold detector circuit diagram R2M diode transconductance amplifier spice OPA660AU REF200 2N2907 BUF601 OPA1013	PDF
opa1013 equivalent Abstract: AGC OPA660 2N2907 OPA1013 OPA660 OPA660AP OPA660AU REF200 CCII APPLICATION 0525P Text: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION	Original	OPA660 850MHz OPA660 opa1013 equivalent AGC OPA660 2N2907 OPA1013 OPA660AP OPA660AU REF200 CCII APPLICATION 0525P	PDF
in6263 Abstract: BUF601 Text: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION	Original	OPA660 850MHz 400MHz OPA660 in6263 BUF601	PDF
Y2 transistor Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882 Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123	Original	huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882	PDF
NE800296 Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in	Original	AN82901-1 NE800296 NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application	PDF

MMBF4856 Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the	Original	226AA) 226AE) MMSD1000T1 236AB MMBF0201NLT1 MMBF0202PLT1 MMBF4856 pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA	PDF
BC337 BC547 Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the	Original	MDC5000T1 MDC3105LT1 BC337 BC547 MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM	PDF
BC547 sot package sot-23 Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the	Original	MDC5000T1 MDC5001T1 MDC3105LT1 BC547 sot package sot-23 BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package	PDF
transistor tic 2250 Abstract: No abstract text available Text: SyrnSEMi SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR MMBTA55LT1 transistor pnp MMBTA56LT1 FEATURES Power dissipation PCM : 0.225 Collector current Icm : -0. 5 Collector base voltage W (Tamb=25 °C) A : MMBTA55: -60 V MMBTA56: -80 V Operating and storage junction temperature range	OCR Scan	MMBTA55LT1 MMBTA56LT1 MMBTA55: MMBTA56: MMBTA55 OT-23 950TPY 037TPY transistor tic 2250	PDF
2GM H transistor Abstract: 2GM TRANSISTOR transistor marking SA p sot-23 Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT MMBTA56 Small Signal Transistors PNP SOT-23 FEATURES ♦ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. .122 Ì3.1Ì .118 (3.0) .016 (0.4) Top View ♦ As complementary type, the NPN	OCR Scan	MMBTA56 OT-23 MMBTA06 MPSA56. OT-23 2GM H transistor 2GM TRANSISTOR transistor marking SA p sot-23	PDF
Untitled Abstract: No abstract text available Text: B U R R - B R O W N <i [ OPA660 1 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS • WIDE BANDWIDTH: 850MHz BASE LINE RESTORE CIRCUITS • HIGH SLEW RATE: 3000V/\|is VIDEO/BROADCAST EQUIPMENT • LOW DIFFERENTIAL GAIN/PHASE	OCR Scan	OPA660 850MHz	PDF
1820N Abstract: No abstract text available Text: BU RR - BROW N [ OPA660 1 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS • WIDE BANDWIDTH: 850MHz BASE LINE RESTORE CIRCUITS • HIGH SLEW RATE: 3000V/,us VIDEO/BROADCAST EQUIPMENT • LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02°	OCR Scan	OPA660 850MHz 400MHz OPA66O 1820N	PDF

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2GM TRANSISTOR 6 Search Results

2GM TRANSISTOR 6 Result Highlights (5)

2GM TRANSISTOR 6 Datasheets Context Search

Untitled

2gm transistor

2GM sot-23 transistor

2gm transistor

MPSa56 equivalent

Untitled

MMBTA55

IN6263

AGC OPA660

in6263

opa1013 equivalent

in6263

Y2 transistor

NE800296

MMBF4856

BC337 BC547

BC547 sot package sot-23

transistor tic 2250

2GM H transistor

Untitled

1820N