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Silicon Laboratories Inc EFR32MG13P632F512GM48-DR IC RF TXRX+MCU 802.15.4 48QFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	EFR32MG13P632F512GM48-DR	Digi-Reel	49,000		1	1 $9.94 10 $7.677 100 $6.1913 1000 $5.24501 10000 $5.24501	Buy Now
	EFR32MG13P632F512GM48-DR	Cut Tape	49,000		1	1 $9.94 10 $7.677 100 $6.1913 1000 $5.24501 10000 $5.24501	Buy Now
	EFR32MG13P632F512GM48-DR	Reel	47,500		2,500	1 - 10 - 100 - 1000 - 10000 $4.97544	Buy Now
Bristol Electronics	EFR32MG13P632F512GM48-DR		2,284			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Flip Electronics	EFR32MG13P632F512GM48-DR		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Symmetry Electronics	EFR32MG13P632F512GM48-DR				1	1 $5.5 10 $5.5 100 $5.5 1000 $5.5 10000 $5.5	Buy Now
Silicon Laboratories Inc EFR32BG22C224F512GM40-CR IC RF TXRX+MCU BLE 40QFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	EFR32BG22C224F512GM40-CR	Reel	22,500		2,500	1 - 10 - 100 - 1000 - 10000 $1.60851	Buy Now
Mouser Electronics	EFR32BG22C224F512GM40-CR		68,772			1 $2.44 10 $2.28 100 $1.97 1000 $1.85 10000 $1.45	Buy Now
Symmetry Electronics	EFR32BG22C224F512GM40-CR				1	1 $1.68 10 $1.68 100 $1.68 1000 $1.68 10000 $1.68	Buy Now
Silicon Laboratories Inc EFR32FG13P231F512GM48-DR IC RF TXRX+MCU 802.15.4 48QFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	EFR32FG13P231F512GM48-DR	Digi-Reel	12,395		1	1 $13.66 10 $10.608 100 $8.6203 1000 $7.35887 10000 $7.35887	Buy Now
Mouser Electronics	EFR32FG13P231F512GM48-DR		2,500			1 $10.97 10 $9.93 100 $8.36 1000 $6.95 10000 $6.65	Buy Now
Silicon Laboratories Inc EFR32FG22C121F512GM40-CR IC RF TXRX+MCU WIFI 40QFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	EFR32FG22C121F512GM40-CR	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $1.7569	Buy Now
Bristol Electronics	EFR32FG22C121F512GM40-CR		1,353			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Silicon Laboratories Inc EFR32FG23A010F512GM48-C IC RF TXRX+MCU ISM<1GHZ 48QFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	EFR32FG23A010F512GM48-C	Tray	2,258		1	1 $6.99 10 $6.237 100 $5.11413 1000 $3.49258 10000 $3.49258	Buy Now
Symmetry Electronics	EFR32FG23A010F512GM48-C		1		1	1 $4.09 10 $4.09 100 $4.09 1000 $4.09 10000 $4.09	Buy Now

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2GM 4 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA56 TRANSISTOR PNP SOT–23 FEATURES  General Purpose Amplifier Applications MARKING: 2GM 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	OT-23 MMBTA56 -10mA -100mA -100mA, 100MHz	PDF
Untitled Abstract: No abstract text available Text: MMBTA55 THRU MMBTA56 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • This device is designed for general purpose amplifier applications at collector current to 300mA Marking Code: MMBTA55=2H MMBTA56=2GM	Original	MMBTA55 MMBTA56 300mA MMBTA55 MMBTA56 OT-23	PDF
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55WT1G LMBTA56WT1G S-LMBTA55WT1G S-LMBTA56WT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101	Original	LMBTA55WT1G LMBTA56WT1G S-LMBTA55WT1G S-LMBTA56WT1G AEC-Q101 LMBTA55 LMBTA56 SC-70	PDF
2gm transistor Abstract: ota amplifier Modulation using OTA AB-180 OPA622 OPA660 Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132	Original	OPA660 OPA622 2gm transistor ota amplifier Modulation using OTA AB-180	PDF
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G S-LMBTA55LT1G S-LMBTA56LT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101	Original	LMBTA55LT1G LMBTA56LT1G S-LMBTA55LT1G S-LMBTA56LT1G AEC-Q101 LMBTA55 LMBTA56 236AB) LMBTA55LT1G	PDF
MMBTA56LT1 Abstract: marking code 2GM SOT 23 Text: MMBTA55LT1, MMBTA56LT1 MMBTA56LT1 is a Preferred Device Driver Transistors PNP Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value VCEO MMBTA55 MMBTA56 Collector −Base Voltage	Original	MMBTA55LT1, MMBTA56LT1 MMBTA56LT1 MMBTA55 MMBTA56 MMBTA55LT1 OT-23 marking code 2GM SOT 23	PDF
Untitled Abstract: No abstract text available Text: Driver Transistors PNP Silicon MMBTA55LT1 MMBTA56LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value MMBTA55 MMBTA56 Collector–Emitter Voltage V CEO –60 –80 Vdc Collector–Base Voltage V CBO –60 –80 Vdc Emitter–Base Voltage	Original	MMBTA55LT1 MMBTA56LT1 MMBTA55 MMBTA56 236AB) AmbientMBTA56LT1 100mAdc, 10mAdc)	PDF
2GM sot Abstract: No abstract text available Text: ᄰ፿ྯ૵਌! General Purpose Transistors General Purpose Transistors FHTA56 ᄰ፿ྯ૵਌ DESCRIPTION & FEATURES 概述及特點 Complementary to FHTA06 與 FHTA06 互補 SOT-23 PIN ASSIGNMENT 引腳說明 PIN NAME FUNCTION PIN NUMBER 引腳序號管腳符號	Original	OT-23 FHTA56 FHTA06 OT-23 hFE1FHTA56 -10mA -100mA 2GM sot	PDF
operational amplifier discrete schematic Abstract: 5555 Series Band Pass Filter PAC10 Text: ispPAC 10 TM In-System Programmable Analog Circuit Features Functional Block Diagram • IN-SYSTEM PROGRAMMABLE ISP ANALOG CIRCUIT — Four Instrument Amplifier Gain/Attenuation Stages — Signal Summation (Up to 4 Inputs) — Precision Active Filtering (10kHz to 100kHz)	Original	10kHz 100kHz) 550kHz 330kHz -74dB 10kHz) 28-Pin operational amplifier discrete schematic 5555 Series Band Pass Filter PAC10	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA55LT1 MMBTA56LT1 TRANSISTOR（ PNP ） SOT—23 1. BASE 2. EMITTER 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.225 W（Tamb=25℃） Collector current	Original	OT-23 MMBTA55LT1 MMBTA56LT1 MMBTA55: MMBTA56: MMBTA55 MMBTA56 MMBTA56LT1:	PDF
marking 2GM Abstract: 2GM transistor marking M29 MMBTA56LT1 M292 2GM j MMBTA55 MMBTA55LT1 MMBTA56 Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon MMBTA55LT1 MMBTA56LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value MMBTA55 MMBTA56 Collector–Emitter Voltage V CEO –60 –80 Vdc Collector–Base Voltage V CBO –60 –80	Original	MMBTA55LT1 MMBTA56LT1 MMBTA55 MMBTA56 236AB) MMBTA55LT1 100mAdc, 10mAdc) marking 2GM 2GM transistor marking M29 MMBTA56LT1 M292 2GM j MMBTA56	PDF
2gm transistor Abstract: vishay TRANSISTOR Sot-23 MARKING CODE 2GM sot-23 transistor 2GM sot marking code 2GM marking 2GM marking codes sot-23 2GM 20FEB02 Text: MMBTA56 Vishay Semiconductors formerly General Semiconductor Small Signal Transistor PNP TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View Mounting Pad Layout .056 (1.43) .052 (1.33) 3 .016 (0.4) Pin Configuration 1 = Base 2 = Emitter 3 = Collector	Original	MMBTA56 O-236AB OT-23) MMBTA06 100mA 100mA, 100mA 100MHz 2gm transistor vishay TRANSISTOR Sot-23 MARKING CODE 2GM sot-23 transistor 2GM sot marking code 2GM marking 2GM marking codes sot-23 2GM 20FEB02	PDF
Untitled Abstract: No abstract text available Text: 广东肇庆风华新谷微电子有限公司广东省肇庆市风华路 18 号风华电子工业城三号楼一楼 TEL:0758-2865088 2865091 FAX:0758-2849749 General Purpose Transistors 三极管 PNP Silicon FHTA56 FEATURES 特点 • Complementary to FHTA06 与 FHTA06 互补	Original	FHTA56) FHTA06 FHTA56 -100A -10mA -100mA	PDF
AN6019 Abstract: PAC10 1GM1 Text: ispPAC 10 Features Functional Block Diagram • IN-SYSTEM PROGRAMMABLE ISP ANALOG CIRCUIT — Four Instrument Amplifier Gain/Attenuation Stages — Signal Summation (Up to 4 Inputs) — Precision Active Filtering (10kHz to 100kHz) — No External Components Needed for Configuration	Original	10kHz 100kHz) 550kHz 330kHz -74dB 10kHz) 28-Pin AN6019 PAC10 1GM1	PDF

MMBTA55 Abstract: MMBTA55 MMBTA56 2gm transistor 6 MMBTA56 2gm transistor 2GM H transistor 2GM sot-23 transistor Text: MMBTA55 / MMBTA56 PNP Silicon Elektronische Bauelemente Driver Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 SOT-23 3 A 1 L 2 3 C OLLE C TOR 3 B S Top View 1 V 2 G 1 B AS E C 2 E MIT T E R D H K J Dim Min Max A 2.800	Original	MMBTA55 MMBTA56 OT-23 01-Jun-2002 MMBTA55 MMBTA56 2gm transistor 6 MMBTA56 2gm transistor 2GM H transistor 2GM sot-23 transistor	PDF
Untitled Abstract: No abstract text available Text: MCC MMBTA55 THRU MMBTA56 omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • This device is designed for general purpose amplifier applications at collector current to 300mA	Original	MMBTA55 MMBTA56 OT-23 300mA 2H/B55, MMBTA56 2GM/B56	PDF
Untitled Abstract: No abstract text available Text: MCC MMBTA55 THRU MMBTA56 omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • • Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant "P" Suffix designates	Original	MMBTA55 MMBTA56 300mA MMBTA55 2H/B55, MMBTA56 2GM/B56	PDF
AGC OPA660 Abstract: in6263 transconductance amplifier spice spice model 1n4148 DMF3068A operational amplifier discrete schematic 1n4148 spice model Group-Delay phase filter OTA operational transconductance amplifier pin configuration transistor 2n2907 Text: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION	Original	OPA660 850MHz OPA660 470pF 470pF 1N4007 AGC OPA660 in6263 transconductance amplifier spice spice model 1n4148 DMF3068A operational amplifier discrete schematic 1n4148 spice model Group-Delay phase filter OTA operational transconductance amplifier pin configuration transistor 2n2907	PDF
SSB-LX2720SYW Abstract: No abstract text available Text: UNCONTROLLED DOCUMENT 3.81 [0.150: 1.27 [0.050] 4 PL S. <3 PL S.) r- 16 1 SSB -LX2720SYW 6,10 [0,240] 12 11 10 9 14 1 REV. PART NUMBER 4,00 [0,157] 0,25 [0,010] t 9.94 [0.391] B.89 [0.350] 7 .6 2 [0 .3 0 0 ] ELEC T R O -O PT IC A L CHARACTERISTICS T A = 2 5 T	OCR Scan	SSB-LX2720SYW 1234-567B SSB-LX2720SYW	PDF
SSB-LX2720SYD Abstract: No abstract text available Text: UNCONTROLLED DOCUMENT 3.81 [0.150: 4 1.27 [0.050] PL S. r- 16 1 SSB — LX2720SYD 6,10 [0 ,2 4 0 ] <3 PL S.) 12 11 10 9 14 1 REV. PART NUMBER 4,00 [0 ,1 5 7 ] 0 ,2 5 [0,010] t 9 .9 4 [0 .3 9 1 ] B.89 [0 .3 5 0 ] 7 .6 2 [0 .3 0 0 ] ELEC T R O -O PT IC A L CHARACTERISTICS T A = 2 5 T	OCR Scan	LX2720SYD 1234-567B SSB-LX2720SYD	PDF
SSB-LX2820SUGD Abstract: No abstract text available Text: UNCONTROLLED DOCUMENT 3.81 [0.15 0: 4 PL S. r- 1.27 [0 .0 5 0 ] <3 PL S.) 16 1 14 1 12 11 10 REV. PART NUMBER SSB— LX2820SUGD 6,10 [0 ,2 4 0 ] 9 4,00 [0 ,1 5 7 ] 0 ,2 5 [0,010] t 9 .9 4 [0 .3 9 1 ] B.89 [0 .3 5 0 ] 7 .6 2 [ 0 .3 0 0 ] E L E C T R O - O P T I C A L C H A R A C T E R IS T IC S T A = 2 5 T	OCR Scan	LX2820SUGD 1234-567B 150CHIP SSB-LX2820SUGD	PDF
6S 069 Abstract: No abstract text available Text: PART NUMBER U N C O N T R O LLED D O C U M EN T SML-LX1 20 6 S R W -T R P. 00 [0.079] r 1,60 [0,063] REV, A ANODE MARK + REV. A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #10644. & REDRAWN IN 3D. DATE 7.18.00 i R0.40 [R0.016] 2 PLSJ L 1 .1 0 ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 T	OCR Scan	660nm DI35EMNATIDN 50LDERINC 6S 069	PDF
transistor tic 2250 Abstract: No abstract text available Text: SyrnSEMi SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR MMBTA55LT1 transistor pnp MMBTA56LT1 FEATURES Power dissipation PCM : 0.225 Collector current Icm : -0. 5 Collector base voltage W (Tamb=25 °C) A : MMBTA55: -60 V MMBTA56: -80 V Operating and storage junction temperature range	OCR Scan	MMBTA55LT1 MMBTA56LT1 MMBTA55: MMBTA56: MMBTA55 OT-23 950TPY 037TPY transistor tic 2250	PDF
RE75G Abstract: RE65G RE60G 850f250 RE70G Text: OHMITE 89 Type M anufacturing Com pany * Metal-Mite Aluminum Housed Axial Lead Wirewound Resistors 1% Tolerance Features • High Stability ‘ 0.5% A R. • High power to size ratio. • Metal housing allow s chassis m ounting and provides heat sink capability.	OCR Scan	esign10F4R0 810F5R0 810F10R 825F5R0 82SF1DR 825F15R 850F5R0 B50F10R 850F15R 810F15R RE75G RE65G RE60G 850f250 RE70G	PDF

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2GM 4 Search Results

2GM 4 Price and Stock

Silicon Laboratories Inc EFR32MG13P632F512GM48-DR

Silicon Laboratories Inc EFR32BG22C224F512GM40-CR

Silicon Laboratories Inc EFR32FG13P231F512GM48-DR

Silicon Laboratories Inc EFR32FG22C121F512GM40-CR

Silicon Laboratories Inc EFR32FG23A010F512GM48-C

2GM 4 Datasheets Context Search

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2gm transistor

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MMBTA56LT1

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2GM sot

operational amplifier discrete schematic

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marking 2GM

2gm transistor

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AN6019

MMBTA55

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AGC OPA660

SSB-LX2720SYW

SSB-LX2720SYD

SSB-LX2820SUGD

6S 069

transistor tic 2250

RE75G