2A SOT 323 Search Results

2A SOT 323 Result Highlights (5)

Part	Manufacturer	Description
7UL2T125FK	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC
TC75S102F	Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25
7UL2T126FK	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC
TCR2EF18	Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV)
TCR2LF18	Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV)

2A SOT 323 Price and Stock

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Nexperia PMST2222A,115 Bipolar Transistors - BJT SOT323 40V .6A NPN SWITCHING
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	PMST2222A,115	Reel	120,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.0198	Buy Now

2A SOT 323 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SSN2N7002A Abstract: No abstract text available Text: SSN2N7002A N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 60V 0.25A SOT-323 RDS(ON) ( ) Max D 3 @VGS = 10V G 4 @VGS = 5V S D FEATURES Super high dense cell design for low RDS(ON). G Rugged and reliable. SOT-323 package. Marking Code S 2A	Original	PDF	SSN2N7002A OT-323 OT-323 SSN2N7002A
Untitled Abstract: No abstract text available Text: SSF7401 -30V , -2A P-Ch Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 DESCRIPTION The SSF7401 uses advanced trench technology to provide excellent on-resistance, low gate charge and	Original	PDF	SSF7401 OT-323 SSF7401 10sec 18-Oct-2011
SSF1320N Abstract: MosFET Text: SSF1320N 2A , 20V , RDS ON 58 mΩ Ω N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SOT-323 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low	Original	PDF	SSF1320N OT-323 OT-323 28-Aug-2012 SSF1320N MosFET
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT3906LT1G • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 ORDERING INFORMATION Device 1 Marking 2 Shipping LMBT3906LT1G 2A 3000/Tape & Reel LMBT3906LT3G	Original	PDF	LMBT3906LT1G 3000/Tape LMBT3906LT3G 10000/Tape 236AB)
TRANSISTOR MOTOROLA MAC 223 Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac Text: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),	Original	PDF
MMBT3904WT1G Abstract: 1N916 MMBT3904WT1 MMBT3906WT1 MMBT3906WT1G Text: MMBT3904WT1, NPN MMBT3906WT1, PNP General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications.	Original	PDF	MMBT3904WT1, MMBT3906WT1, OT-323/SC-70 MMBT3904WT1 MMBT3906WT1 SC-70 OT-323) MMBT3904WT1G 1N916 MMBT3904WT1 MMBT3906WT1 MMBT3906WT1G
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT3906TT1 3 FEATURE ƽSimplifies Circuit Design. ƽThis is a Pb-Free Device. 1 2 ORDERING INFORMATION Device LMBT3906TT1 Marking Shipping 2A 3000/Tape&Reel SC-89 MAXIMUM RATINGS Symbol Value	Original	PDF	LMBT3906TT1 3000/Tape SC-89
QM5HL-24 Abstract: 2sk2850 transistor qm5hl 2SK2850 transistor pnp 600v. 1a. to 92 QM5HL24 MG20G6EL1 600V PNP pnp transistor 600V NPN Transistor 600V Text: Next W M.T O .C Semiconductors00-YDiscretes W 1 M.T . O W C W WW .100Y. M.T O W .C ZTX~Series Transistors .TW W product Detailed Ware available on: us. 100y. com. tw W 00Y specifications 1 M.T . M O W O C . .C WW .1Pol00YIc max Part No. Product No. Manufacturer	Original	PDF	10silicon ZTX653 3P/TO-92 NPN00Y ZTX689B ZTX690B NPN100Y AT-31033-TR1 QM5HL-24 2sk2850 transistor qm5hl 2SK2850 transistor pnp 600v. 1a. to 92 QM5HL24 MG20G6EL1 600V PNP pnp transistor 600V NPN Transistor 600V
sot-23 single diode mark PD Abstract: LN2302LT1G SC-75 LN2302LT3G mark 642 sot 6 mark 642 sot 363 single diode sot-23 mark pd SOT23 MARKING N02 MARK LTRA SOT23 Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2302LT1G VDS= 20V RDS ON , [email protected], [email protected] = 60m Ω RDS(ON), [email protected], [email protected] = 115mΩ 3 1 2 Features SOT– 23 (TO–236AB) High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM	Original	PDF	LN2302LT1G 236AB) 3000/Tape LN2302LT3G 000/Tape 195mm 150mm 3000PCS/Reel sot-23 single diode mark PD LN2302LT1G SC-75 LN2302LT3G mark 642 sot 6 mark 642 sot 363 single diode sot-23 mark pd SOT23 MARKING N02 MARK LTRA SOT23
LP4101LT1G Abstract: P41 sot-23 mark 642 sot 363 MARKING d1 sot-723 SC-75 SOT-353 MARKING 8v sot-23 single diode mark PD Text: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP4101LT1G VDS= -20V RDS ON , [email protected], [email protected] = 100 mΩ RDS(ON), [email protected], [email protected] = 150 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance	Original	PDF	LP4101LT1G 236AB) 3000/Tape LP4101LT3G 000/Tape 195mm 150mm 3000PCS/Reel LP4101LT1G P41 sot-23 mark 642 sot 363 MARKING d1 sot-723 SC-75 SOT-353 MARKING 8v sot-23 single diode mark PD
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. ▼ Simple Drive Requirement LP2301LT1G ▼ Small Package Outline ▼ Surface Mount Device ▼ Pb-Free package is available 3 1 2 SOT– 23 TO–236AB D G S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS	Original	PDF	LP2301LT1G 236AB)
LP2301LT1G Abstract: SC-75 SOT-353 MARKING 8v 619 SOT 23 sot-23 single diode mark PD Text: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP2301LT1G VDS= -20V RDS ON , [email protected], [email protected] = 100 mΩ RDS(ON), [email protected], [email protected] = 150 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance	Original	PDF	LP2301LT1G 236AB) 3000/Tape LP2301LT3G 000/Tape 195mm 150mm 3000PCS/Reel LP2301LT1G SC-75 SOT-353 MARKING 8v 619 SOT 23 sot-23 single diode mark PD
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. ƽ Pb-Free Package is available.	Original	PDF	323/SCâ LMBT3904WT1G LMBT3906WT1G OT-323/SC-70 3000/Tape LMBT3904WT3G 10000/Tape
Infineon technology roadmap for mosfet Abstract: germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor Text: Small CHIPS for big visions Silicon Discretes www.infineon.com Never stop thinking. INTRODUCTION O n e o f t h e w o r l d ' s major manufacturers of radio frequency RF components, Infineon Technologies is committed to innovative technologies and products, flexible service and the very best supply conditions for customers and partners.	Original	PDF	B191-H7496-G1-X-7600 Infineon technology roadmap for mosfet germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor

Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LMBT3906WT1G S-LMBT3906WT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.	Original	PDF	LMBT3906WT1G S-LMBT3906WT1G 323/SCâ AEC-Q101 OT-323/SC-70 3000/Tape LMBT3906WT3G S-LMBT3906We
1N916 Abstract: MMBT3904WT1 MMBT3906WT1 SMD310 Text: MMBT3904WT1, NPN MMBT3906WT1, PNP General Purpose Transistors NPN and PNP Silicon http://onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is designed for low power surface mount applications.	Original	PDF	MMBT3904WT1, MMBT3906WT1, 323/SC MMBT3904WT1 MMBT3906WT1 1N916 MMBT3904WT1 MMBT3906WT1 SMD310
AB-038 Abstract: OPA544T opa544 AB-039 MUR420 OPA544F OPA544T-1 REF102 Text: OPA544 High-Voltage, High-Current OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● HIGH OUTPUT CURRENT: 2A min The OPA544 is a high-voltage/high-current operational amplifier suitable for driving a wide variety of high power loads. High performance FET op amp	Original	PDF	OPA544 OPA544 100pA O-220 AB-038 OPA544T AB-039 MUR420 OPA544F OPA544T-1 REF102
MMBF4856 Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the	Original	PDF	226AA) 226AE) MMSD1000T1 236AB MMBF0201NLT1 MMBF0202PLT1 MMBF4856 pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA
1N916 Abstract: MMBT3904WT1 MMBT3906WT1 Text: MOTOROLA Order this document MMBT3904WT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN MMBT3904WT1 PNP MMBT3906WT1 NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount	Original	PDF	MMBT3904WT1/D MMBT3904WT1 MMBT3906WT1 323/SC 1N916 MMBT3904WT1 MMBT3906WT1
1N916 Abstract: MMBT3904WT1 MMBT3906WT1 Text: MOTOROLA Order this document MMBT3904WT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN MMBT3904WT1 PNP MMBT3906WT1 NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount	Original	PDF	MMBT3904WT1/D MMBT3904WT1 MMBT3906WT1 323/SC 1N916 MMBT3904WT1 MMBT3906WT1
1N916 Abstract: MMBT3904WT1 MMBT3904WT1G MMBT3906WT1 MMBT3906WT1G Text: MMBT3904WT1, NPN MMBT3906WT1, PNP General Purpose Transistors NPN and PNP Silicon http://onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications.	Original	PDF	MMBT3904WT1, MMBT3906WT1, OT-323/SC-70 MMBT3904WT1 MMBT3906WT1 SC-70 OT-323) 1N916 MMBT3904WT1 MMBT3904WT1G MMBT3906WT1 MMBT3906WT1G
AB-038 Abstract: AB-039 MUR420 OPA544 OPA544F OPA544T OPA544T-1 REF102 TO-220 Text: OPA544 High-Voltage, High-Current OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● HIGH OUTPUT CURRENT: 2A min The OPA544 is a high-voltage/high-current operational amplifier suitable for driving a wide variety of high power loads. High performance FET op amp	Original	PDF	OPA544 OPA544 100pA O-220 AB-038 AB-039 MUR420 OPA544F OPA544T OPA544T-1 REF102 TO-220
BC547 sot package sot-23 Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the	Original	PDF	MDC5000T1 MDC5001T1 MDC3105LT1 BC547 sot package sot-23 BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
BC337 BC547 Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the	Original	PDF	MDC5000T1 MDC3105LT1 BC337 BC547 MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM

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2A SOT 323 Search Results

2A SOT 323 Result Highlights (5)

2A SOT 323 Price and Stock

Nexperia PMST2222A,115

2A SOT 323 Datasheets Context Search

SSN2N7002A

Untitled

SSF1320N

Untitled

TRANSISTOR MOTOROLA MAC 223

MMBT3904WT1G

Untitled

QM5HL-24

sot-23 single diode mark PD

LP4101LT1G

Untitled

LP2301LT1G

Untitled

Infineon technology roadmap for mosfet

Untitled

1N916

AB-038

MMBF4856

1N916

1N916

1N916

AB-038

BC547 sot package sot-23

BC337 BC547