3n40
Abstract: No abstract text available
Text: TM UniFET FDD3N40 / FDU3N40 400V N-Channel MOSFET Features Description • 2A, 400V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
|
Original
|
PDF
|
FDD3N40
FDU3N40
FDU3N40
FDD3N40TF
FDD3N40TM
3n40
|
FDD3N40TM
Abstract: FDD3N40 FDD3N40TF FDU3N40 FDU3N40TU
Text: TM UniFET FDD3N40 / FDU3N40 400V N-Channel MOSFET Features Description • 2A, 400V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
|
Original
|
PDF
|
FDD3N40
FDU3N40
FDD3N40TM
FDD3N40TF
FDU3N40
FDU3N40TU
|
Untitled
Abstract: No abstract text available
Text: TM UniFET FDD3N40 / FDU3N40 400V N-Channel MOSFET Features Description • 2A, 400V, RDS on = 3.4Ω @VGS = 10 V • Low gate charge ( typical 4.5 nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar
|
Original
|
PDF
|
FDD3N40
FDU3N40
|
FDT3N40
Abstract: No abstract text available
Text: TM UniFET FDT3N40 400V N-Channel MOSFET Features Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • 2A, 400V, RDS on = 3.4 @VGS = 10 V • Low gate charge ( typical 4.5 nC)
|
Original
|
PDF
|
FDT3N40
FDT3N40
|
FDT3N40
Abstract: FDT3N40TF JESD51-3
Text: TM UniFET FDT3N40 400V N-Channel MOSFET Features Description • 2A, 400V, RDS on = 3.4 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 4.5 nC)
|
Original
|
PDF
|
FDT3N40
OT-223
FDT3N40
FDT3N40TF
JESD51-3
|
STD2NB40
Abstract: No abstract text available
Text: STD2NB40 N - CHANNEL 400V - 3.5Ω - 2A - IPAK/DPAK PowerMESH MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID STD2NB40 400 V <4Ω 2A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 3.5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES
|
Original
|
PDF
|
STD2NB40
STD2NB40
|
STD2NB40
Abstract: No abstract text available
Text: STD2NB40 N - CHANNEL 400V - 3.5Ω - 2A - IPAK/DPAK PowerMESH MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID STD2NB40 400 V <4Ω 2A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 3.5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES
|
Original
|
PDF
|
STD2NB40
STD2NB40
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N40K-TA Power MOSFET 2A, 400V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N40K-TA is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, stable off–state characteristics
|
Original
|
PDF
|
2N40K-TA
2N40K-TA
2N40KL-TA3-T
2N40KG-at
QW-R205-024
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N40 Preliminary Power MOSFET 2A, 400V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, stable off–state characteristics and superior
|
Original
|
PDF
|
2N40L-TA3-T
2N40G-TA3-at
QW-R502-524
|
d2nb4
Abstract: STD2NB40 D2NB40
Text: STD2NB40 N - CHANNEL 400V - 3.5Ω - 2A - IPAK/DPAK PowerMESH MOSFET PRELIMINARY DATA TYPE ST D2NB40 • ■ ■ ■ ■ ■ V DSS R DS on ID 400 V < 4Ω 2 A TYPICAL RDS(on) = 3.5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES
|
Original
|
PDF
|
STD2NB40
D2NB40
d2nb4
STD2NB40
D2NB40
|
inductor 100mH
Abstract: PA09 PA09A
Text: VIDEO POWER OPERATIONAL AMPLIFIERS PA09 • PA09A M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • • POWER MOS TECHNOLOGY — 2A peak rating HIGH GAIN BANDWIDTH PRODUCT — 150MHz VERY FAST SLEW RATE — 400V/µs
|
Original
|
PDF
|
PA09A
546-APEX
150MHz
PA09U
inductor 100mH
PA09
PA09A
|
MOSFET POWER AMP
Abstract: No abstract text available
Text: VIDEO POWER OPERATIONAL AMPLIFIERS PA09 • PA09A M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • • POWER MOS TECHNOLOGY — 2A peak rating HIGH GAIN BANDWIDTH PRODUCT — 150MHz VERY FAST SLEW RATE — 400V/µs
|
Original
|
PDF
|
PA09A
546-APEX
150MHz
100pF
PA09MU
MOSFET POWER AMP
|
Untitled
Abstract: No abstract text available
Text: VIDEO POWER OPERATIONAL AMPLIFIERS PA09 • PA09A M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • • POWER MOS TECHNOLOGY — 2A peak rating HIGH GAIN BANDWIDTH PRODUCT — 150MHz VERY FAST SLEW RATE — 400V/µs
|
Original
|
PDF
|
PA09A
546-APEX
150MHz
PA09U
|
DC4060
Abstract: c40400 AQW254 AQW254A AQW254AX AQW254AZ
Text: PhotoMOS MOSFET PhotoMOS MOSFET输出光电耦合器 输出光电耦合器) HE 2a 尺寸图 对应RoHS 分类与电路构成 动作原理的说明 P.240 P.244 P.236 术语说明 使用注意事项 P.245 应用电路示例 P.246 标准认证一览 P.252 P.1129
|
Original
|
PDF
|
120mA
AQW254
AQW254A
AQW254AX
AQW254AZ
AQW254
800mW
100ms(
120mA
DC4060
c40400
AQW254A
AQW254AX
AQW254AZ
|
|
|
Untitled
Abstract: No abstract text available
Text: 2N6800 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT POWER MOSFET 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. BVDSS ID RDS(on) 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 400V 3.0A Ω
|
Original
|
PDF
|
2N6800
O205AF)
2N6800"
2N6800
2N6800LCC4
2N6800LCC4-JQR-B
2N6800SMD
2N6800SMD-JQR-B
O276AB)
|
AN-8831
Abstract: 2E12 2N7280D 2N7280H 2N7280R 3E12 2N728
Text: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM430 D, R, H 2N7280D, 2N7280R 2N7280H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 3A, 500V, RDS(on) = 2.50Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts
|
Original
|
PDF
|
FRM430
2N7280D,
2N7280R
2N7280H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
Neutrons/cm38
AN-8831
2E12
2N7280D
2N7280H
2N7280R
3E12
2N728
|
RE26A
Abstract: No abstract text available
Text: Data Sheet No. PD-6.086A International I O R Rectifier IR 2 1 1 0 E 4 HIGH AND LOW SIDE DRIVER Product Summary Features Floating channel designed for bootstrap VOFFSET 400V max. lo+/- 2A/2A VOUT 1 0 -2 0 V ton/off ty p . 120 & 94 ns Delay Matching 10 ns
|
OCR Scan
|
PDF
|
2110E4
RE26A
|
Untitled
Abstract: No abstract text available
Text: PA09 •PA09A APEX MICROTECHINJOLOGY CORPORATION • APPLICATIONS HOTLINE 800 546-APEX 800-5-46-2739 FEATURES • • • • • • • POWER MOS TECHNOLOGY — 2A peak rating HIGH GAIN BANDWIDTH PRODUCT — 150MHz VERY FAST SLEW RATE — 400V/^s PROTECTED OUTPUT STAGE — Thermal shutoff
|
OCR Scan
|
PDF
|
PA09A
546-APEX
150MHz
|
Untitled
Abstract: No abstract text available
Text: M3Q5271 ^ 0053771 ET? • HAS HARRIS 2 N 6 7 9 2 N-Channel Enhancement-Mode Power MOS Field-Effect Transistor August 1991 Features Package T D -2 0 5 A F • 2A, 400V BOTTOM VIEW • rDS on = 1-8n • SOA is Power-Dissipation Limited GATE SOURCE • Nanosecond Switching Speeds
|
OCR Scan
|
PDF
|
M3Q5271
2N6792
|
Untitled
Abstract: No abstract text available
Text: VIDEO POWER OPERATIONAL AMPLIFIERS PAO9 • PAO9 A M I C R O T E C H N O L O G Y h t t p ://WWW.APEXMICRDTECH.OOM 800 5 4 6 -APEX (800) 546-2739 FEATURE • PCWffl MCSTECHNOLOGY — 2A peak rating • HIGH GAIN BANDWIDTH PRODUCT— 150WHz • VfflY FAST SLB/V RATE — 400V/ |as
|
OCR Scan
|
PDF
|
150WHz
|
Untitled
Abstract: No abstract text available
Text: SKI Harris S E M I C O N D U C T O R 2N7281D, 2N7281R 2N72S1H REGISTRATION PENDING Currently Available as FRL430 D, R, H u -i -j Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 2A, 500V, RDS(on) = 2.501} TQ-205AF • Second Generation Rad Hard MOSFET Result« From New Design Concepts
|
OCR Scan
|
PDF
|
2N7281D,
2N7281R
2N72S1H
TQ-205AF
FRL430
100KRAD
300KRAD
1000KRAD
3000KRAD
AN-8831,
|
Untitled
Abstract: No abstract text available
Text: H a r r is I J U S E M I C O N D U C T O R FRL430D, FRL430R, FRL430H 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 2A, 500V, RDS on = 2.5012 TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts
|
OCR Scan
|
PDF
|
FRL430D,
FRL430R,
FRL430H
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
FRU30UI5
FRL430PHDT0
|
Untitled
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR 5ÖE D iU HARRIS W SEMICONDUCTOR REGISTRATION PENDING Currently Available as FRL430 D, R, H • 43D2271 004S 7GD ^23 « H A S 2N7281D, 2N7281R 2N7281H Radiation Hardened N-Channel Power MOSFETs December 1992 Features • 2A, 500V, RDS(on) - 2.500
|
OCR Scan
|
PDF
|
FRL430
2N7281D,
2N7281R
2N7281H
100KRAD
300KRAD
1000KRAD
3000KRAD
004S703
|
Untitled
Abstract: No abstract text available
Text: HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL430 D, R, H November 1994 2N7281D, 2N7281R 2N7281H R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 2A, 500V, RDS(on) = 2.50ft TO-205AF • Second Generation Rad Hard MOSFET Results From New Design C oncepts
|
OCR Scan
|
PDF
|
FRL430
2N7281D,
2N7281R
2N7281H
100KRAD
300KRAD
1000KRAD
3000KRAD
FRL420PH0T0
|
