2SK365 Search Results

2SK365 Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SK3653-T1-A		Renesas Electronics Corporation	Switching N-Channel Power Mosfet
2SK3659-AZ		Renesas Electronics Corporation	Switching N Channel MOSFET, MP-45F, /Bag

2SK365 Price and Stock

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Rochester Electronics LLC 2SK3659-AZ MOSFET N-CH 20V 65A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK3659-AZ	Bulk			198	1 - 10 - 100 - 1000 $1.52 10000 $1.52	Buy Now
Renesas Electronics Corporation 2SK3654W-S17-AY 2SK3654W-S17-AY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SK3654W-S17-AY		29,000		219	1 - 10 - 100 - 1000 $1.55 10000 $1.55	Buy Now
Rochester Electronics	2SK3654W-S17-AY		29,000		1	1 $1.46 10 $1.46 100 $1.37 1000 $1.24 10000 $1.24	Buy Now
Toshiba America Electronic Components 2SK3658TE12LF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2SK3658TE12LF		570			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Renesas Electronics Corporation 2SK3659-AZ 2SK3659 - Power Field-Effect Transistor, 65A, 20V, N-Channel MOSFET '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	2SK3659-AZ		979		1	1 $1.46 10 $1.46 100 $1.37 1000 $1.24 10000 $1.24	Buy Now

2SK365 Datasheets (23)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK365	Toshiba	Field Effect Transistor Silicon N Channel Junction Type	Original	PDF
2SK365	Unknown	FET Data Book	Scan	PDF
2SK365	Toshiba	FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE	Scan	PDF
2SK365	Toshiba	Silicon N channel field effect transistor for audio amplifier, analog switch, constant current and impedance converter applications	Scan	PDF
2SK365	Toshiba	TO-92 Mini Package Transistors / Junction FETs	Scan	PDF
2SK3650-01L	Fuji Electric	N-CHANNEL SILICON POWER MOSFET	Original	PDF
2SK3650-01S	Fuji Electric	N-CHANNEL SILICON POWER MOSFET	Original	PDF
2SK3650-01SJ	Fuji Electric	N-CHANNEL SILICON POWER MOSFET	Original	PDF
2SK3651-01R	Fuji Electric	N-Channel Silicon Power MOSFET	Original	PDF
2SK3651-01R	Fuji Electric	N-CHANNEL SILICON POWER MOSFET	Original	PDF
2SK3652	Kexin	N-Channel Enhancement Mode MOSFET	Original	PDF
2SK3652	Panasonic	N-Channel Enhancement Mode MOSFET	Original	PDF
2SK3652	TY Semiconductor	N-Channel Enhancement Mode MOSFET - TO-263	Original	PDF
2SK3653	NEC	N-channel junction FET for ECM	Original	PDF

2SK3653B	NEC	N-CHANNEL SILICON J-FET	Original	PDF
2SK3653C	NEC	JUNCTION FIELD EFFECT TRANSISTOR	Original	PDF
2SK3656	Toshiba	Silicon N-Channel MOS FET	Original	PDF
2SK3658	Toshiba	Silicon N Channel MOS FET	Original	PDF
2SK3658(TE12L,F)	Toshiba	2SK3658 - Trans MOSFET N-CH 60V 2A 4-Pin(3+Tab) PW-Mini T/R	Original	PDF
2SK3659	NEC	Power MOS FET	Original	PDF

2SK365 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SK3658 Abstract: No abstract text available Text: 2SK3658 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK3658 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.23 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 2.0 S (typ.)	Original	PDF	2SK3658 2SK3658
2SK3654 Abstract: 2SK365 Text: 2SK365 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK365 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)	Original	PDF	2SK365 2SK3654 2SK365
Untitled Abstract: No abstract text available Text: 2SK3651-01R [0311] FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features TO-3PF High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply)	Original	PDF	2SK3651-01R
2SK3559 Abstract: IDA-20 Text: New Achieving the industry's lowest Ron Qg along with high switching speed through the use of micro-cell structure and a newly developed design. Low On-Resistance, High-Speed Switching MOSFET Series Product Outline 2SK3628/2SK3559/2SK3665/2SK3637/2SK3652 are low On-resistance, high-speed switching MOSFETs ideal	Original	PDF	2SK3628/2SK3559/2SK3665/2SK3637/2SK3652 2SK3628 2SK3559 2SK3665 2SK3637 2SK3652 E00128AE IDA-20
2sk3656 Abstract: MARKING CODE c5 sc-62 Text: 2SK3656 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3656 VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These	Original	PDF	2SK3656 2sk3656 MARKING CODE c5 sc-62
2SK3656 Abstract: No abstract text available Text: 2SK3656 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3656 VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These	Original	PDF	2SK3656 2SK3656
2SK3654 Abstract: No abstract text available Text: 2SK365 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK365 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)	Original	PDF	2SK365 2SK3654
2SK3654 Abstract: 2SK365 Text: 2SK365 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK365 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)	Original	PDF	2SK365 2SK3654 2SK365
2SK3653B Abstract: No abstract text available Text: データ・シート接合形電界効果トランジスタ Junction Field Effect Transistor 2SK3653B N チャネル接合形シリコン電界効果トランジスタ ECM インピーダンス変換用外形図（単位：mm） 2SK3653B は，ゲート - ソース間にダイオードと高抵抗を内	Original	PDF	2SK3653B D17284JJ1V0DS00 T284JJ1V0DS D17284JJ1V0DS M8E02 2SK3653B
2SK3659 Abstract: No abstract text available Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3659 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3659 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics, 2SK3659	Original	PDF	2SK3659 2SK3659 O-220 O-220
jeita sc-62 Abstract: 2SK3658 TR140 Text: 2SK3658 東芝電界効果トランジスタ 2 シリコンNチャネルMOS形 L −π−MOSⅤ 2SK3658 ○ リレー駆動DC−DC コンバータ用単位: mm z オン抵抗が低い。 : RDS (ON) = 0.23Ω (標準) z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 2.0S (標準)	Original	PDF	2SK3658 10VID SC-62 VDD48V, jeita sc-62 2SK3658 TR140
D1629 Abstract: 2SK3653 Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3653 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK3653 is suitable for converter of ECM. +0.1 0.3 ±0.05 0.13 –0.05 FEATURES	Original	PDF	2SK3653 2SK3653 D1629
k3652 Abstract: k365 2SK3652 Text: Power MOSFETs 2SK3652 N-channel enhancement mode MOSFET • Features Unit: mm 15.5±0.5 V Gate-source surrender voltage VGSS ±30 V Drain current ID 50 A Peak drain current IDP 200 A EAS 2 200 mJ PD 100 W Avalanche energy capability * Power dissipation Ta = 25°C	Original	PDF	2SK3652 k3652 k365 2SK3652
k3652 Abstract: k365 2SK3652 Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3652 N-channel enhancement mode MOSFET • Features Unit: mm 15.5±0.5 (4.5) Peak drain current Avalanche energy capability * Power dissipation Ta = 25°C Junction temperature	Original	PDF	2002/95/EC) 2SK3652 K3652 k3652 k365 2SK3652

2SK3653B Abstract: 2SK3653 Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3653B N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3653B is suitable for converter of ECM. 0.13 +0.1 –0.05 0.3 ±0.05 0.2 General-purpose product.	Original	PDF	2SK3653B 2SK3653B 2SK3653
Untitled Abstract: No abstract text available Text: Transistors IC SMD Type Product specification 2SK3652 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 For high-speed switching 2 .5 4 -0+ 0.2.2	Original	PDF	2SK3652 O-263
d1889 Abstract: 2SK3653C marking EE Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3653C N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3653C contains a diode and high resistivity 0.2 time during power-on. In addition, because of its compact	Original	PDF	2SK3653C 2SK3653C d1889 marking EE
2SK3652 Abstract: k3652 k365 Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3652 N-channel enhancement mode MOSFET • Features Unit: mm 15.5±0.5 V Gate-source surrender voltage VGSS ±30 V Drain current ID 50 A Peak drain current IDP 200 A EAS 2 200	Original	PDF	2002/95/EC) 2SK3652 2SK3652 k3652 k365
2SK3656 Abstract: No abstract text available Text: 2SK3656 東芝電界効果トランジスタシリコンNチャネルMOS形 2SK3656 ○ VHF/UHF 帯電力増幅用ご注意本資料に掲載されている製品は通信機器向高周波電力増幅用に使用されることを意図しています。他の用途	Original	PDF	2SK3656 SC-62 470MHz 20070701-JA 2SK3656
2sk170 FET Abstract: Junction-FET fet to92 2SK364 2SK118 2sk117 2SJ74 2sk879 2sj105 2SJ14 Text: Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch	Original	PDF	2SK246 2SJ103 2SK117 2SK362 2SK363 2SK364 2SJ104 2SK30ATM 2SK170 2SJ74 2sk170 FET Junction-FET fet to92 2SK118 2SJ74 2sk879 2sj105 2SJ14
2SK3650-01L Abstract: No abstract text available Text: 2SK3650-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS Uninterruptible Power Supply	Original	PDF	2SK3650-01L
2SK365 Abstract: No abstract text available Text: TOSHIBA 2SK365 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK365 Unit in mm FOR AUDIO AM PLIFIER, ANALOG-SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS • • High Breakdown Voltage High Imput Impedance Low RDs ON •	OCR Scan	PDF	2SK365 55MAX 2SK365
2SK365 Abstract: No abstract text available Text: TO SH IB A 2SK365 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK365 Unit in mm FOR AUDIO AMPLIFIER, ANALOG-SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS • • High Breakdown Voltage High Imput Impedance • Low RDS ON	OCR Scan	PDF	2SK365 55MAX. -100p
Untitled Abstract: No abstract text available Text: T O SH IB A 2SK365 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK365 FOR AUDIO AMPLIFIER, ANALOG-SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS Unit in mm 4 .2 M A X. • High Breakdown Voltage VGDS= - 50V • High Imput Impedance	OCR Scan	PDF	2SK365

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2SK365 Search Results

2SK365 Result Highlights (2)

2SK365 Price and Stock

Rochester Electronics LLC 2SK3659-AZ

Renesas Electronics Corporation 2SK3654W-S17-AY

Toshiba America Electronic Components 2SK3658TE12LF

Renesas Electronics Corporation 2SK3659-AZ

2SK365 Datasheets (23)

2SK365 Datasheets Context Search

2SK3658

2SK3654

Untitled

2SK3559

2sk3656

2SK3656

2SK3654

2SK3654

2SK3653B

2SK3659

jeita sc-62

D1629

k3652

k3652

2SK3653B

Untitled

d1889

2SK3652

2SK3656

2sk170 FET

2SK3650-01L

2SK365

2SK365

Untitled