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    2SK3437 Price and Stock

    Toshiba America Electronic Components 2SK3437(Q)

    Trans MOSFET N-CH Si 600V 10A 3-Pin(3+Tab) TO-220FL
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    Verical 2SK3437(Q) 88 59
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    Quest Components 2SK3437(Q) 70
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    2SK3437 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK3437 Toshiba power MOSFET Original PDF
    2SK3437 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3437 Toshiba DC-DC Converter, Relay Drive and Motor Drive Applications Original PDF
    2SK3437(2-10S1B) Toshiba 2SK3437 - TRANSISTOR 10 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10S1B, 3 PIN, FET General Purpose Power Original PDF
    2SK3437(2-10S2B) Toshiba 2SK3437 - TRANSISTOR 10 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10S2B, 3 PIN, FET General Purpose Power Original PDF
    2SK3437(Q) Toshiba 2SK3437 - MOSFET N-CH 600V 10A SC-67 Original PDF

    2SK3437 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SK3437

    Abstract: k3437
    Text: 2SK3437 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3437 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.74 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.)


    Original     		2SK3437 2SK3437 k3437 PDF

    2SK3437

    Abstract: No abstract text available
    Text: 2SK3437 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3437 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.74 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.)


    Original     		2SK3437 2SK3437 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3437 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3437 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.74 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.)


    Original     		2SK3437 PDF

    2SK3437

    Abstract: K343
    Text: 2SK3437 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3437 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 0.74 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.)


    Original     		2SK3437 2SK3437 K343 PDF

    2SK3437

    Abstract: No abstract text available
    Text: 2SK3437 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3437 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.74 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.)


    Original     		2SK3437 2SK3437 PDF

    2SK3437

    Abstract: 2SK34
    Text: 2SK3437 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3437 DC-DC Converter, Relay Drive and Motor Drive Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.74 Ω (typ.) · High forward transfer admittance: |Yfs| = 4.5 S (typ.)


    Original     		2SK3437 2SK3437 2SK34 PDF

    2SK3437

    Abstract: 120V1 K3437
    Text: 2SK3437 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV 2SK3437 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 0.74 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 4.5 S (標準)


    Original     		2SK3437 2-10S1B 2SK3437 120V1 K3437 PDF

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    Toshiba TMPA8873

    Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
    Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6


    Original     		SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853 PDF

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078 PDF

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 PDF

    MOSFET TOSHIBA 2SK2917

    Abstract: 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent
    Text: Power MOSFET High Voltage:more than 150V Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540004_01 1/16 Trend of High Speed and High Voltage Power MOSFETs R D S (ON )* Q s w ( O h m * n C) 8 VDSS=200V RDS(ON)@VGS=10V 6


    Original     		DP0540004 MOSFET TOSHIBA 2SK2917 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent PDF

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603 PDF

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126 PDF

    TA1343NG

    Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
    Text: システムカタログ システムカタログ TVソリューション 2007-5 デジタルテレビ・FPDテレビの構成 ● チューナ用IC デジタル放送 ● PIF/SIFシステム DRAM デジタル放送信号処理 ● 映像信号処理 伝送処理


    Original     		p12p13 p17p18 p19p22 SCJ0001D SCJ0001C TA1343NG TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122 PDF

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03 PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF

    transistor compatible 2SK3569

    Abstract: TK12A65D 2SK3569 equivalent tk6a65d equivalent TB-7005 TPCA8019-H TPCA8023-H tk10a60d equivalent TPCA8030-H p 181 Photocoupler
    Text: 2009-3 SYSTEM CATALOG Semiconductors for Power Supplies SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng AC-Input Switching Power Supply Circuits and Recommended New Product Series ● Secondary rectifier 1. Ultra-high-speed N-channel trench MOSFET U-MOSIII-H Series


    Original     		TLP285/TLP781) TB6818FG/TB6819FG) SCE0024B SCE0024C transistor compatible 2SK3569 TK12A65D 2SK3569 equivalent tk6a65d equivalent TB-7005 TPCA8019-H TPCA8023-H tk10a60d equivalent TPCA8030-H p 181 Photocoupler PDF

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028 PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    2SK3566 equivalent

    Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
    Text: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		BCE0017E S-167 BCE0017F 2SK3566 equivalent 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent PDF

    2SK34

    Abstract: Silicon N Chanel high speed power switching SK34 DIODE
    Text: SEP 25*00 06:01 »CCT-FAX* HHo:05250258 <Norial iiessage> From:67361 10:33745 [Alt.] P0Q6/017 0UT:0001 TKY0808-T T O S H I B A _ 2SK3437 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt - M O S V 2 SK34 3 7 HIGH SPEED,HIGH VOLTAGE SWITCHING APPLICATIONS


    OCR Scan     		P0Q6/017 TKY0808-T 2SK3437 2SK34 Silicon N Chanel high speed power switching SK34 DIODE PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3437 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt- MO S V 2SK3 4 3 7 TENTATIVE SWITCHING REGULATOR APPLICATIONS Unit in mm •Low Drain - Source ON Resistance : R D S {ONi=0*74Q(Typ.) •High Forward Transfer Admittance : IY fs |= 4 . 5 S(Typ.)


    OCR Scan     		2SK3437 100/z PDF