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Renesas Electronics Corporation 2SK3296 N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; JEDEC-95 Code: TO-220AB; Minimum DS Breakdown Voltage: 20 V;
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2SK3296 Datasheets (8)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SK3296		Kexin	N-Channel MOSFET		Original	PDF
2SK3296		NEC	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE		Original	PDF
2SK3296		NEC	Switching N-Channel Power MOS FET Industrial Use		Original	PDF
2SK3296		TY Semiconductor	N-Channel MOSFET - TO-263		Original	PDF
2SK3296-S		NEC	Switching N-Channel Power MOS FET Industrial Use		Original	PDF
2SK3296-Z		NEC	Power MOS FET		Original	PDF
2SK3296-ZJ		NEC	Switching N-Channel Power MOS FET Industrial Use		Original	PDF
2SK3296-ZK		NEC	Switching N-Channel Power MOS FET Industrial Use		Original	PDF

2SK3296 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Transistors IC SMD Type Product specification 2SK3296 TO-263 +0.1 1.27-0.1 Features 4.5 V drive available Low on-state resistance +0.1 1.27-0.1 +0.2 4.57-0.2 Built-in gate protection diode Surface mount device available +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max	Original	2SK3296 O-263	PDF
2SK3296 Abstract: 2SK3296-S 2SK3296-ZJ MP-25 nec 2sk3296 Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3296 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3296 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics,	Original	2SK3296 2SK3296 O-220AB 2SK3296-S O-262 2SK3296-ZJ O-263 2SK3296-S 2SK3296-ZJ MP-25 nec 2sk3296	PDF
nec 2sk3296 Abstract: 2SK3296 2SK3296-S 2SK3296-ZJ 2SK3296-ZK MP-25 M2SK3296 Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3296 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE • DESCRIPTION ORDERING INFORMATION The 2SK3296 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as	Original	2SK3296 2SK3296 O-220AB 2SK3296-S O-262 2SK3296-ZK O-263 MP-25ZK) 2SK3296-ZJ nec 2sk3296 2SK3296-S 2SK3296-ZJ 2SK3296-ZK MP-25 M2SK3296	PDF
D1406 Abstract: 2SK3296 nec 2sk3296 MP-25 2SK3296-S 2SK3296-ZJ 2SK3296-ZK Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3296 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3296 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as	Original	2SK3296 2SK3296 O-220AB 2SK3296-S O-262 2SK3296-ZK O-263 MP-25ZK) 2SK3296-ZJ D1406 nec 2sk3296 MP-25 2SK3296-S 2SK3296-ZJ 2SK3296-ZK	PDF
M2SK3296 Abstract: D1406 2SK3296 2SK3296-S 2SK3296-Z MP-25 MP-25Z Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK3296 N チャネルパワーMOS FET スイッチング用工業用 2SK3296 は，N チャネル MOS FET でオン抵抗が低く，スイッチング特性が優れており，同期整流方式 DC/DC コンバー	Original	2SK3296 2SK3296 O-262 2SK3296-Z O-220AB 2SK3296-S O-220SMD D14063JJ2V0DS00 M2SK3296 D1406 2SK3296-S 2SK3296-Z MP-25 MP-25Z	PDF
2SK3296 Abstract: No abstract text available Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3296 TO-263 +0.1 1.27-0.1 Features 4.5 V drive available Low on-state resistance +0.1 1.27-0.1 +0.2 4.57-0.2 Built-in gate protection diode Surface mount device available +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1	Original	2SK3296 O-263 2SK3296	PDF
2SK2500 Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861 Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose	Original		PDF
STF12A80 Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer	Original	02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B	PDF
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696	PDF
B55QS03 Abstract: it8282m ATI SB460 AMD Athlon 64 X2 pin diagram STP80 b55qs SB460/600 Text: 5 D C B 1 Cover Page 2 Block Diagram 3 Clock Generator 4 Power CPU Vcore , Intersil 6566(DCR Sense) 5 Power A(DC to DC) 6 Power B(DC to DC),PWR sequence&good 7 K8 - M2 CPU (HT) D 8 K8 - M2 CPU (MEM) A 9 K8 - M2 CPU (CTRL) B,C 10 K8 - M2 CPU (POWER,GND) E,F,G,H	Original	RS485 ITE8282 RT9218 PCIEX16 RS485M-M B55QS03 it8282m ATI SB460 AMD Athlon 64 X2 pin diagram STP80 b55qs SB460/600	PDF
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
D1406 Abstract: nec 2sk3296 2SK3296 2SK3296-S 2SK3296-ZJ 2SK3296-ZK MP-25 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
2SK3296 Abstract: 2SK3296-S 2SK3296-Z MP-25 MP-25Z Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	2SK3296 2SK3296 O-262 2SK3296-Z O-220AB 2SK3296-S O-220SMD D14063JJ2V0DS 2SK3296-S 2SK3296-Z MP-25 MP-25Z	PDF
M2SK3295 Abstract: M2SK3354 2SK2499 2SK3296 M2SK3355 umos varistor 2754 2SK3355 PA1700A PA1707 Text: LINEUP POWER MOSFET SERIES UMOS II Kazuhiro Yamada UMOS I process Planar process G S i UMOS II process G S S G n+ n+ n+ p p p n- n- n- n+ n+ i D i D n+ D Fig. 1 Cross Sectional View of Cell Structure Ron Ω N channel VDSS: 60 V Package: TO-220 RDS(on) indicates the TYP value	Original	O-220 2SK2499 2SK2826 2SK3355 PA1855 0V/23m 2SK3295 2SK3296 2SK3365 2SK3367 M2SK3295 M2SK3354 2SK2499 M2SK3355 umos varistor 2754 2SK3355 PA1700A PA1707	PDF

M2SK3295 Abstract: 2SK32 M2SK3296 D1553 60341 2SK3295 2SK3296 SPICE2G6 .model nmos Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	2SK32× 2SK3295 2SK3296 D15537JJ1V0IF001 D15537JJ1V0IF 2SK3295. 2SK3296. M2SK3295 2SK32 M2SK3296 D1553 60341 2SK3295 2SK3296 SPICE2G6 .model nmos	PDF