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    2SK3147 Search Results

    2SK3147 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3147L-E Renesas Electronics Corporation Nch Single Power Mosfet 100V 5A 130Mohm DPAK(L)-(2)/To-251 Visit Renesas Electronics Corporation
    2SK3147STR-E Renesas Electronics Corporation Nch Single Power Mosfet 100V 5A 130Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation
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    2SK3147 Price and Stock

    Renesas Electronics Corporation 2SK3147S

    N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Package Shape: RECTANGULAR; No. of Elements: 1;
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    Vyrian 2SK3147S 195
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    Hitachi Ltd 2SK3147(S)

    N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Maximum Operating Temperature: 150 Cel; Qualification: Not Qualified;
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian 2SK3147(S) 49
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    2SK3147 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK3147 Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3147 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3147(L) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SK3147(L) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3147L Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3147L-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3147(S) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SK3147S Kexin N-Channel MOSFET Original PDF
    2SK3147(S) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3147S Renesas Technology SMD, High Speed Power Amplifier, 100V 5A 20W, MOS-FET N-Channel enhanced Original PDF
    2SK3147S Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3147S TY Semiconductor N-Channel MOSFET - TO-252 Original PDF
    2SK3147STL-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF

    2SK3147 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SK3147S

    Abstract: No abstract text available
    Text: IC MOSFET SMD Type Silicon N Cannel MOSFET 2SK3147S TO-252 Features Low on-resistance typ. +0.15 1.50-0.15 RDS = 0.1 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1


    Original     		2SK3147S O-252 2SK3147S PDF

    Hitachi DSA00280

    Abstract: No abstract text available
    Text: 2SK3147 L , 2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-731 (Z) 1st. Edition Feb. 1999 Features • Low on-resistance R DS =0.1 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline DPAK–2


    Original     		2SK3147 ADE-208-731 D-85622 Hitachi DSA00280 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SK3147S TO-252 Features Low on-resistance typ. +0.15 1.50-0.15 RDS = 0.1 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1


    Original     		2SK3147S O-252 PDF

    Hitachi DSA002780

    Abstract: No abstract text available
    Text: 2SK3147 L ,2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-731(Z) 1st. Edition December 1998 Features • • • Low on-resistance R DS =0.1 Ω typ. High speed switching 4V gate drive device can be driven from 5V source Outline DPAK–2


    Original     		2SK3147 ADE-208-731 D-85622 Hitachi DSA002780 PDF

    2SK3147

    Abstract: 2SK3147L-E 2SK3147STL-E PRSS0004ZD-B PRSS0004ZD-C
    Text: 2SK3147 L , 2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1072-0200 (Previous: ADE-208-731) Rev.2.00 Sep 07, 2005 Features • Low on-resistance RDS =0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source


    Original     		2SK3147 REJ03G1072-0200 ADE-208-731) PRSS0004ZD-B PRSS0004ZD-C 2SK3147L-E 2SK3147STL-E PRSS0004ZD-B PRSS0004ZD-C PDF

    2SK3147

    Abstract: Hitachi DSA00239
    Text: 2SK3147 L ,2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-731 (Z) 1st. Edition February 1999 Features • Low on-resistance R DS = 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline


    Original     		2SK3147 ADE-208-731 Hitachi DSA00239 PDF

    Hitachi DSA002749

    Abstract: No abstract text available
    Text: 2SK3147 L ,2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching 1st. Edition February 1999 Features • • • Low on-resistance RDS = 0.1 Ω typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline DPAK–2 4 4 D


    Original     		2SK3147 Hitachi DSA002749 PDF

    Hitachi DSA00279

    Abstract: No abstract text available
    Text: 2SK3147 L ,2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-731 (Z) 1st. Edition February 1999 Features • Low on-resistance R DS = 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline


    Original     		2SK3147 ADE-208-731 Hitachi DSA00279 PDF

    2SK3147

    Abstract: 2SK3147L-E 2SK3147STL-E PRSS0004ZD-B PRSS0004ZD-C
    Text: 2SK3147 L , 2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1072-0300 Rev.3.00 Aug 17, 2009 Features • Low on-resistance RDS = 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B


    Original     		2SK3147 REJ03G1072-0300 PRSS0004ZD-B PRSS0004ZD-C 2SK3147L-E 2SK3147STL-E PRSS0004ZD-B PRSS0004ZD-C PDF

    2SK3235

    Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
    Text: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting


    Original     		HAT2038R/HAT2038RJ ADE-208-666C HAT2038R HAT2038RJ pdf\7420e HAT1044M HAT1053M 2SK3235 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053 PDF

    Untitled

    Abstract: No abstract text available
    Text: To all our customers Information regarding change of names mentioned within this document, to Renesas Technology Corp. On April 1st 2003 the following semiconductor operations were transferred to Renesas Technology Corporation: operations covering microcomputer, logic,


    Original     		PDF

    7054F

    Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
    Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver


    Original     		2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557 PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original     		2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj PDF

    2SK3147

    Abstract: 2SK3147L
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    hd155080tf

    Abstract: eb5 SMD smd code eb5 SH7051 eb6 smd transistor Hitachi audio mosfet application SH7055F hd video downconverter hd155080 nissei capacitors
    Text: automotive 28.10.1998 18:55 Uhr Page 3 O ct ob e r 1 9 9 8 S e m i C o n d u c t o r S o l u t i o n s A u t o m o t i v e A p p l i c a t i o n s WHAT’S NEXT? 0 2 - 0 3 8 A automotive 28.10.1998 18:55 Uhr Page 5 Semi Conductor Solutions INDEX for Automotive Applications


    Original     		H8S/2623 SH7055F SH7709 F-78148 E-28036 hd155080tf eb5 SMD smd code eb5 SH7051 eb6 smd transistor Hitachi audio mosfet application hd video downconverter hd155080 nissei capacitors PDF

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 PDF

    lvc16244

    Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
    Text: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List


    Original     		HD49323A HA12134A HA12141N HA12155N HA12163 HA12167F HA12173 HA12179F HA12181F HA12187F lvc16244 BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP PDF

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


    Original     		3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545 PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 PDF

    1002ds

    Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
    Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5


    Original     		24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as PDF

    74ls111

    Abstract: 2SA872 spice 74LS122 spice model hitachi mosfet power amplifier audio application BC240 hitachi mosfet audio application note 74ls221 Spice 74LS123 spice 2sk2685 spice spice 74ls00
    Text: INDEX GENERAL General Information Sales Locations Semiconductor Packages FLAT PANEL CONTROLLER / DRIVER Liquid Crystal Display Controller MICROCONTROLLER Microcontroller General Micro. Shortform Micro. Overview Micro. Hardware Manual Micro. Program. Manual


    Original     		Switchin2SC3512 2SC3513 2SC3793 2SC3867 2SC4126 2SC4196 2SC4197 2SC4260 2SC4261 2SC4262 74ls111 2SA872 spice 74LS122 spice model hitachi mosfet power amplifier audio application BC240 hitachi mosfet audio application note 74ls221 Spice 74LS123 spice 2sk2685 spice spice 74ls00 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3147 L ,2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI 1st. Edition February 1999 Features • Low on-resistance • • Rds = 0.1 Q. typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline DPAK-2 II


    OCR Scan     		2SK3147 PDF

    2sk3155

    Abstract: 2sk3148 Fuel injection
    Text: Hitachi Power MOS FET D5 Series : Low on-resistance at 1 00V to 200V V dss * i •Applications ¡Feature and Merit Electrical equipment Feature In-pipe fuel injection High 1 Monitor S-correction Merit High breakdown voltage promotes equipm ent safety planning


    OCR Scan     		O-220 O-220FM 2SK3147 2SK3150 2SK3149 2SK3148 2SK3151 2SK3152 2SK3153 2sk3155 Fuel injection PDF