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    2SK2586 Search Results

    2SK2586 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    2SK2586-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 60A 10Mohm To-3P Visit Renesas Electronics Corporation

    2SK2586 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2586 Hitachi Semiconductor Mosfet Guide Original PDF
    2SK2586 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK2586 Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK2586 Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK2586-E Renesas Technology Silicon N Channel MOS FET Original PDF

    2SK2586 Datasheets Context Search

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    Hitachi DSA001652

    Abstract: No abstract text available
    Text: 2SK2586 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance RDS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P D 1 G 2 3 1. Gate


    Original     		PDF 2SK2586 D-85622 Hitachi DSA001652

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: 2SK2586 Silicon N-Channel MOS FET ADE-208-358C Z 4th. Edition Aug. 1995 Application High speed power switching Features • • • • Low on-resistance R DS(on) = 7 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline


    Original     		PDF 2SK2586 ADE-208-358C D-85622 Hitachi DSA00276

    2SK25

    Abstract: 2SK2529 2SK2586 PE-50 Hitachi DSA00116
    Text: 2SK2586 Silicon N Channel MOS FET Application TO–3P High speed power switching Features • Low on–resistance RDS on = 7 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V souece S 2 1 G 1 2 3 3 1. Gate 2. Drain (Flange)


    Original     		PDF 2SK2586 2SK25 2SK2529 2SK2586 PE-50 Hitachi DSA00116

    2SK2529

    Abstract: 2SK2586 Hitachi DSA00336
    Text: 2SK2586 Silicon N-Channel MOS FET ADE-208-358 C 4th. Edition Application High speed power switching Features • • • • Low on-resistance R DS on = 7 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P D 1 G


    Original     		PDF 2SK2586 ADE-208-358 2SK2529 2SK2586 Hitachi DSA00336

    2SK2586

    Abstract: 2SK2586-E PRSS0004ZE-A SC-65
    Text: 2SK2586 Silicon N Channel MOS FET REJ03G1020-0500 Previous: ADE-208-358C Rev.5.00 Sep 07, 2005 Application High speed power switching Features • Low on-resistance RDS(on) = 7 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source


    Original     		PDF 2SK2586 REJ03G1020-0500 ADE-208-358C) PRSS0004ZE-A 2SK2586 2SK2586-E PRSS0004ZE-A SC-65

    Untitled

    Abstract: No abstract text available
    Text: 2SK2586 Silicon N Channel MOS FET Application TO–3P High speed power switching Features • Low on–resistance RDS on = 7 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V souece S 2 1 G 1 2 3 3 1. Gate 2. Drain (Flange)


    Original     		PDF 2SK2586

    Hitachi DSA002713

    Abstract: No abstract text available
    Text: 2SK2586 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance RDS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P D 1 G 2 3 1. Gate


    Original     		PDF 2SK2586 Hitachi DSA002713

    Hitachi DSA002780

    Abstract: No abstract text available
    Text: 2SK2586 Silicon N-Channel MOS FET ADE-208-358 C 4th. Edition Application High speed power switching Features • • • • Low on-resistance R DS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P D 1


    Original     		PDF 2SK2586 ADE-208-358 D-85622 Hitachi DSA002780

    2SK3235

    Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
    Text: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting


    Original     		PDF HAT2038R/HAT2038RJ ADE-208-666C HAT2038R HAT2038RJ pdf\7420e HAT1044M HAT1053M 2SK3235 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053

    2sk 4207

    Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original     		PDF D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent

    7054F

    Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
    Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver


    Original     		PDF 2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557

    TO220CFM

    Abstract: 2SK2554 TO-220CFM to-3p(i)d series HAT1020R HAT1021R HAT1023R HAT1024R HAT1026R HAT2016R
    Text: Power Mosfet 5th Generation The Performance Revolution Literature Order Number Revision Number 5/14/97 Hitachi Europe, Ltd. European Marketing Power Mosfet 5th Generation - The Performance Revolution 1.1 RDS ON 4.5m Ohm - A new standard has been set With the introduction of the new D5-Series HITACHI started a new age of RDS (ON)


    Original     		PDF 2SK2927* O-220 2SK2928* 2SK2929* 2SK2930* 2SK2931* TO220CFM 2SK2554 TO-220CFM to-3p(i)d series HAT1020R HAT1021R HAT1023R HAT1024R HAT1026R HAT2016R

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original     		PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj

    Untitled

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF D-85622

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    lvc16244

    Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
    Text: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List


    Original     		PDF HD49323A HA12134A HA12141N HA12155N HA12163 HA12167F HA12173 HA12179F HA12181F HA12187F lvc16244 BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP

    2SJ1334

    Abstract: 2SK3235 HSK81 Hitachi DSAUTAZ006 HA16141
    Text: HA16142P/FP PFC and PWM Controller Application Note ADE-504-006 Z Rev.0 5/17/02 Hitachi, Ltd. Notice When using this document, keep the following in mind: 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,


    Original     		PDF HA16142P/FP ADE-504-006 DO-35 DO-41 HA16142P/FP 2SJ1334 2SK3235 HSK81 Hitachi DSAUTAZ006 HA16141

    hitachi j50

    Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original     		PDF D-85622 hitachi j50 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent

    2SK2829

    Abstract: Spl 740 2sk1 2SK2728 28K13 2SK151
    Text: POWER MOS FET •General switching 23 133» o 12 o CO | 28K1340 2SK1341 2SK1342 2SKW01 2SK1401A 259(1403 2SK1403A 2SK1515A 2SK1516A 2SK1517A 2SK1518A 2SK1573 2SK1668A 8SK1671 »«7 7 3 2SK1835 2SK1933 2SK1934 2SK1968 2SK2007A 2SK2075 2SK2096 2SK2554 2SK2586


    OCR Scan     		PDF 2SK2912 2SK2938 2SK2939 2SK2940 2SK2957 2SK2958 2SJ21S 2SJ217 28K1161 2SK1162 2SK2829 Spl 740 2sk1 2SK2728 28K13 2SK151

    C1030

    Abstract: No abstract text available
    Text: 2SK2586 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • Low on-resistance RDSK.ni = 7 m£2 lyp. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P I 1 2 Ui 3 1. Gate 2. Drain


    OCR Scan     		PDF 2SK2586 ADE-208-358 C1030

    Untitled

    Abstract: No abstract text available
    Text: 2SK2586 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • R ds „„ = 7 m il typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline 3. Source


    OCR Scan     		PDF 2SK2586 D-85622

    2SK2586

    Abstract: No abstract text available
    Text: A D E - 2 0 8 - 3 5 8 C Z 2SK2586 Silicon N Channel MOS FET 4th. Edition HITACHI Application High speed power switching Features • Low on-resistance R D S (o n ) = 7 m ß t y p . • High speed switching • 4 V gate drive device can be driven from 5 V souece


    OCR Scan     		PDF 2SK2586 2SK2586

    2SK975 equivalent

    Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
    Text: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC


    OCR Scan     		PDF 2SK1151 2SK1152 2SK1862 2SK1863 2SK1155 2SK1157 2SK1313 2SK1314 2SK1540 2SK1541 2SK975 equivalent k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44

    2SK2728

    Abstract: 2sk2729
    Text: Replacements for Power MOS FET We recommend that you consider replacing your current Power MOS FET when you develop a new product because the following product types will become obsolete. Current type Replacement 2SK741 2SK1667 2SK970 2SK2927 2SK971 2SK2928, 2SK2929


    OCR Scan     		PDF 2SK741 2SK970 2SK971 2SK972 2SK973 2SK974 2SK1093 2SK1094 2SK2728 2sk2729