Hitachi DSA001652
Abstract: No abstract text available
Text: 2SK2586 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance RDS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P D 1 G 2 3 1. Gate
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2SK2586
D-85622
Hitachi DSA001652
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Untitled
Abstract: No abstract text available
Text: 2SK2588 Power F-MOS FETs 2SK2588 Silicon N-Channel Power F-MOS Unit : mm • Features ● High-speed ● Low 4.6±0.2 ON-resistance ø3.2±0.1 2.9±0.2 9.9±0.3 drive ● Solenoid ● Motor 13.7 -0.2 ● Non-contact +0.5 ■ Applications relay drive drive
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2SK2588
O-220E
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Hitachi DSA00276
Abstract: No abstract text available
Text: 2SK2586 Silicon N-Channel MOS FET ADE-208-358C Z 4th. Edition Aug. 1995 Application High speed power switching Features • • • • Low on-resistance R DS(on) = 7 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline
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2SK2586
ADE-208-358C
D-85622
Hitachi DSA00276
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SC-46
Abstract: 2SK1401 2SK2582 Hitachi DSA00116
Text: 2SK2582 Silicon N Channel MOS FET Application TO–220AB High speed power switching Features D 2 • • • • • Low on–resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC – DC converter 1 G
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2SK2582
220AB
SC-46
2SK1401
2SK2582
Hitachi DSA00116
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2SK25
Abstract: 2SK2529 2SK2586 PE-50 Hitachi DSA00116
Text: 2SK2586 Silicon N Channel MOS FET Application TO–3P High speed power switching Features • Low on–resistance RDS on = 7 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V souece S 2 1 G 1 2 3 3 1. Gate 2. Drain (Flange)
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2SK2586
2SK25
2SK2529
2SK2586
PE-50
Hitachi DSA00116
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2SK2529
Abstract: 2SK2586 Hitachi DSA00336
Text: 2SK2586 Silicon N-Channel MOS FET ADE-208-358 C 4th. Edition Application High speed power switching Features • • • • Low on-resistance R DS on = 7 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P D 1 G
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2SK2586
ADE-208-358
2SK2529
2SK2586
Hitachi DSA00336
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2SK2586
Abstract: 2SK2586-E PRSS0004ZE-A SC-65
Text: 2SK2586 Silicon N Channel MOS FET REJ03G1020-0500 Previous: ADE-208-358C Rev.5.00 Sep 07, 2005 Application High speed power switching Features • Low on-resistance RDS(on) = 7 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source
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2SK2586
REJ03G1020-0500
ADE-208-358C)
PRSS0004ZE-A
2SK2586
2SK2586-E
PRSS0004ZE-A
SC-65
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Hitachi DSA001651
Abstract: No abstract text available
Text: 2SK2582 Silicon N-Channel MOS FET Preliminary November 1996 Application High speed power switching Features N N N N N Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter Outline
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2SK2582
O-220AB
Hitachi DSA001651
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Untitled
Abstract: No abstract text available
Text: 2SK2580 Power F-MOS FETs 2SK2580 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche energy capability guaranteed ● High-speed ø3.2±0.1 2.9±0.2 secondary breakdown ● Low-voltage drive ● Non-contact ● Solenoid ● Motor
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2SK2580
2SK2580
O-220E
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Untitled
Abstract: No abstract text available
Text: 2SK2586 Silicon N Channel MOS FET Application TO–3P High speed power switching Features • Low on–resistance RDS on = 7 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V souece S 2 1 G 1 2 3 3 1. Gate 2. Drain (Flange)
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2SK2586
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Hitachi DSA002713
Abstract: No abstract text available
Text: 2SK2586 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance RDS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P D 1 G 2 3 1. Gate
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2SK2586
Hitachi DSA002713
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Hitachi DSA002780
Abstract: No abstract text available
Text: 2SK2582 Silicon N-Channel MOS FET Preliminary Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter Outline TO-220AB
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2SK2582
O-220AB
D-85622
Hitachi DSA002780
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Hitachi DSA00276
Abstract: No abstract text available
Text: 2SK2582 Silicon N-Channel MOS FET ADE-208-1364A Z 2nd. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter
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2SK2582
ADE-208-1364A
O-220AB
D-85622
Hitachi DSA00276
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Hitachi DSA002780
Abstract: No abstract text available
Text: 2SK2586 Silicon N-Channel MOS FET ADE-208-358 C 4th. Edition Application High speed power switching Features • • • • Low on-resistance R DS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P D 1
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2SK2586
ADE-208-358
D-85622
Hitachi DSA002780
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2SK2829
Abstract: Spl 740 2sk1 2SK2728 28K13 2SK151
Text: POWER MOS FET •General switching 23 133» o 12 o CO | 28K1340 2SK1341 2SK1342 2SKW01 2SK1401A 259(1403 2SK1403A 2SK1515A 2SK1516A 2SK1517A 2SK1518A 2SK1573 2SK1668A 8SK1671 »«7 7 3 2SK1835 2SK1933 2SK1934 2SK1968 2SK2007A 2SK2075 2SK2096 2SK2554 2SK2586
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2SK2912
2SK2938
2SK2939
2SK2940
2SK2957
2SK2958
2SJ21S
2SJ217
28K1161
2SK1162
2SK2829
Spl 740
2sk1
2SK2728
28K13
2SK151
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2SK2588
Abstract: RL502
Text: Panasonic Power F-M OS FETs 2SK2588 Silicon N-Channel Power F-MOS • Features • • • • High-speed switching Low ON-resistance No secondary breakdown Low-voltage drive ■ Applications • • • • • Non-contact relay Solenoid drive Motor drive
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OCR Scan
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PDF
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2SK2588
2SK2588
RL502
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C1030
Abstract: No abstract text available
Text: 2SK2586 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • Low on-resistance RDSK.ni = 7 m£2 lyp. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P I 1 2 Ui 3 1. Gate 2. Drain
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OCR Scan
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PDF
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2SK2586
ADE-208-358
C1030
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Untitled
Abstract: No abstract text available
Text: 2SK2586 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • R ds „„ = 7 m il typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline 3. Source
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OCR Scan
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PDF
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2SK2586
D-85622
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Untitled
Abstract: No abstract text available
Text: 2SK2582 Silicon N-Channel MOS FET HITACHI Preliminary November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter
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2SK2582
75Hitachiâ
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2SK2586
Abstract: No abstract text available
Text: A D E - 2 0 8 - 3 5 8 C Z 2SK2586 Silicon N Channel MOS FET 4th. Edition HITACHI Application High speed power switching Features • Low on-resistance R D S (o n ) = 7 m ß t y p . • High speed switching • 4 V gate drive device can be driven from 5 V souece
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PDF
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2SK2586
2SK2586
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2sk2581
Abstract: No abstract text available
Text: Panasonic P o w e r F -M O S F E T s 2SK2581 Tentative Silicon N-Channel Power F-MOS • Features • • • • • Avalanche energy capability guaranteed High-speed switching Low ON-resistance No secondary breakdown Low-voltage drive ■ Applications
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PDF
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2SK2581
2sk2581
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2SK2580
Abstract: AS0401
Text: Panasonic Power F-MOS FETs 2SK2580 Tentative Silicon N-Channel Power F-MOS • Features • • • • • Avalanche energy capability guaranteed High-speed switching Low ON-resistance No secondary breakdown Low-voltage drive ■ Applications • • •
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PDF
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2SK2580
AS0401
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2SK2581
Abstract: No abstract text available
Text: Panasonic Power F-MOS FETs 2SK2581 Tentative Silicon N-Channel Power F-MOS • Features • Avalanche energy capability guaranteed • High-speed switching • Low ON-resistance • No secondary breakdown • Low-voltage drive ■ Applications • Non-contact relay
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PDF
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2SK2581
2SK2581
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2SK2588
Abstract: VDS1
Text: Panasonic Power F-M OS FETs 2SK2588 Silicon N-Channel Power F-MOS • Features • • • • High-speed switching Low ON-resistance No secondary breakdown Low-voltage drive ■ Applications • • • • • Non-contact relay Solenoid drive Motor drive
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PDF
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2SK2588
2SK2588
VDS1
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