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Rochester Electronics LLC 2SK2011 N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK2011	Bulk			221	1 - 10 - 100 - 1000 $1.36 10000 $1.36	Buy Now
Rochester Electronics LLC 2SK2010-CTV-YA14 NCH 10V DRIVE SERIES
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DigiKey	2SK2010-CTV-YA14	Bulk			365	1 - 10 - 100 - 1000 $0.82 10000 $0.82	Buy Now
Aptina Imaging 2SK2011 Trans MOSFET N-CH Si 250V 12A 3-Pin(3+Tab) TO-220ML
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Verical	2SK2011		13,507		244	1 - 10 - 100 - 1000 $1.3875 10000 $1.3875	Buy Now
Aptina Imaging 2SK2010-CTV-YA14 2SK2010-CTV-YA14
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Verical	2SK2010-CTV-YA14		10,955		404	1 - 10 - 100 - 1000 $0.8403 10000 $0.8403	Buy Now
Aptina Imaging 2SK2010 Trans MOSFET N-CH Si 250V 4A 3-Pin(3+Tab) TO-220ML
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SK2010		2,843		295	1 - 10 - 100 - 1000 $1.1475 10000 $1.1475	Buy Now

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2SK201 Datasheets (46)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK201	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK201	Unknown	FET Data Book	Scan	PDF
2SK2010	Sanyo Semiconductor	Ultrahigh-speed switching	Original	PDF
2SK2010	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK2010	Sanyo Semiconductor	TO-220ML, TO-220MF Type Transistors	Scan	PDF
2SK2010	Sanyo Semiconductor	Large Signal Power MOSFETS	Scan	PDF
2SK2010	Sanyo Semiconductor	Ultra High Speed Switching Transistors	Scan	PDF
2SK2011	Sanyo Semiconductor	N-Channel Silicon MOSFET	Original	PDF
2SK2011	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK2011	Unknown		Scan	PDF
2SK2011	Sanyo Semiconductor	TO-220ML, TO-220MF Type Transistors	Scan	PDF
2SK2011	Sanyo Semiconductor	Large Signal Power MOSFETS	Scan	PDF
2SK2011	Sanyo Semiconductor	Ultra High Speed Switching Transistors	Scan	PDF
2SK2012	Sanyo Semiconductor	N-Channel Silicon MOSFET	Original	PDF

2SK2012	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK2012	Unknown		Scan	PDF
2SK2012	Sanyo Semiconductor	TO-220ML, TO-220MF Type Transistors	Scan	PDF
2SK2012	Sanyo Semiconductor	Large Signal Power MOSFETS	Scan	PDF
2SK2012	Sanyo Semiconductor	Ultra High Speed Switching Transistors	Scan	PDF
2SK2013	Toshiba	N-Channel MOSFET	Original	PDF

2SK201 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SK245 Abstract: 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240 Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch VDS min max 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK215 2SK216 2SK217 2SK218 2SK219 2SK220H	Original	PDF	2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK245 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240
2SK2012 Abstract: No abstract text available Text: Ordering number:EN4321A N-Channel Silicon MOSFET 2SK2012 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SK2012]	Original	PDF	EN4321A 2SK2012 2SK2012] O-220ML 2SK2012
Toshiba 2SJ Abstract: No abstract text available Text: 2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application Unit: mm z High breakdown voltage: VDSS = −180 V z High forward transfer admittance: \|Yfs\| = 0.7 S typ. z Complementary to 2SK2013 Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	2SJ313 2SK2013 SC-67 2-10R1B Toshiba 2SJ
k2013 Abstract: toshiba audio power amplifier 2-10r1b Audio Power Amplifier TOSHIBA toshiba marking code transistor 2SJ313 2SK2013 Toshiba 2SJ Text: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = 180V High forward transfer admittance : \|Yfs\| = 0.7 S typ. Unit: mm Complementary to 2SJ313 Maximum Ratings (Ta = 25°C)	Original	PDF	2SK2013 2SJ313 SC-67 2-10R1B K2013 k2013 toshiba audio power amplifier 2-10r1b Audio Power Amplifier TOSHIBA toshiba marking code transistor 2SJ313 2SK2013 Toshiba 2SJ
2sk2013 2SJ313 Abstract: No abstract text available Text: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = 180V High forward transfer admittance : \|Yfs\| = 0.7 S typ. Unit: mm Complementary to 2SJ313 Maximum Ratings (Tc = 25°C)	Original	PDF	2SK2013 2SJ313 SC-67 2-10R1B 2sk2013 2SJ313
2SK2011 Abstract: EN4320 Text: Ordering number:EN4320A N-Channel Silicon MOSFET 2SK2011 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SK2011]	Original	PDF	EN4320A 2SK2011 2SK2011] O-220ML 2SK2011 EN4320
2SK2018-01L Abstract: No abstract text available Text: 2SK2018-01L,S N-channel MOS-FET FAP-III Series 60V > Features - 0,1Ω 10A 20W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof > Applications - Motor Control - General Purpose Power Amplifier	Original	PDF	2SK2018-01L
2SJ313 Abstract: 2SK2013 2sk2013 2SJ313 Text: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application l High breakdown voltage : VDSS = 180V l High forward transfer admittance : \|Yfs\| = 0.7 S typ. Unit: mm l Complementary to 2SJ313 Maximum Ratings (Ta = 25°C)	Original	PDF	2SK2013 2SJ313 SC-67 2-10R1B 2SJ313 2SK2013 2sk2013 2SJ313
2SK2018-01L Abstract: No abstract text available Text: 2SK2018-01L,S N-channel MOS-FET FAP-III Series 60V > Features - 0,1Ω 10A 20W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof > Applications - Motor Control - General Purpose Power Amplifier	Original	PDF	2SK2018-01L
Untitled Abstract: No abstract text available Text: 2SK2011 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V)30 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)48 @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)2.0 Minimum Operating Temp (øC)-55	Original	PDF	2SK2011
2SK2010 Abstract: No abstract text available Text: Ordering num ber:EN 4319 _ 2SK2010 No.4319 N -Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • M icaless package facilitating mounting. A b so lu te M axim um R a tin g s at Ta = 25°C	OCR Scan	PDF	2SK2010
Untitled Abstract: No abstract text available Text: T O SH IB A 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K2 0 1 3 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION Unit in mm 3.2 ± 0 .2 10 ± 0 .3 • High Breakdown Voltage : V j g g = 180V • High Forward Transfer Admittance : \|Yfs \| = 0 .7 S Typ.)	OCR Scan	PDF	2SK2013 2SJ313
2SJ83 Abstract: 2SK238 2SJ82 2SK241 2SK240 2SK203 2SK220 2S119 2SK197 2SK198 Text: - 38 - * . 1 fr K ft f M € tí: € 2SK197 B ÍL B ÍL 2SK198 tñ“ F 2 SK196 H 2SK199 2SK201 NEC 2SK203 NEC 2SK208 m m m £ 4 -k % Vg s * X V* m (V) * (V) 800m 2m 120 0.2 -2 10 10m G 150m -lOn -0.5 2m 14m 10 -0.3 -4 10 LF A J N D -30 GDO 10m G 150m	OCR Scan	PDF	2SK19600 2SK197 2SK198 2SK199 2SK201 2SK217 2SK218 2SK220 2SK221 2SS222 2SJ83 2SK238 2SJ82 2SK241 2SK240 2SK203 2S119
v-tek Abstract: 2SK2019-01 T0220AB A2338 Text: 2SK2019-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F A P -IIA SERIES O utline D raw ings I features 'high speed switching 1L^w on-resistance 'l\o secondary breakdown •L d w driving power >I- igh voltage »Vgs- ± 30V Guarantee valanche-proof I A pplications	OCR Scan	PDF	2SK2019-01 Tc-25Â T0220AB SC-46 20Kfl) v-tek 2SK2019-01 T0220AB A2338

2SJ313 Abstract: 2SK2013 Text: 2SK2013 T O S H IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 SK2 0 1 3 U n it in mm A U D IO FREQUENCY POWER AMPLIFIER APPLICATION o M A X IM U M RATINGS Ta = 25°C SYM BOL CHARACTERISTIC Drain-Source V oltage V D SS Gate-Souree V oltage	OCR Scan	PDF	2SK2013 2SJ313 SC-67
Untitled Abstract: No abstract text available Text: Ordering number:EN4321A N-Channel Silicon MOSFET _ 2SK2012 m i “ Ultrahigh-Speed Switching Applications Package Dimensions Features •Lo w O N resistance. •Ultrahigh-speed switching. -Low-voltage drive. •Micaless package facilitating mounting.	OCR Scan	PDF	EN4321A 2SK2012 2SK2012] O-220ML Curren80 0G21b0b
2SJ313 Abstract: 2SK2013 SC-65 Text: TOSHIBA 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2013 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vj gg = 180 V High Forward Transfer Admittance : \|Yfs\| = 0.7 S Typ.) Complementary to 2SJ313	OCR Scan	PDF	2SK2013 2SJ313 2SK2013 SC-65
transistor C1000 Toshiba Abstract: 2SJ313 2SK2013 SV125 Text: 2SJ313 TOSHIBA 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vd SS = —180 V High Forward Transfer Admittance : \|Yfs\| = 0.7 S Typ. Complementary to 2SK2013	OCR Scan	PDF	2SJ313 2SK2013 transistor C1000 Toshiba 2SJ313 2SK2013 SV125
2SK2018-01 Abstract: 2SK2018-01L T151 Text: 2SK2018-01L. S FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F • Features A P - I I I S E R I E S Outline Drawings • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance • Avalanche-proof	OCR Scan	PDF	2SK2018-01L. 60iisffl EgTS30 2SK2018-01 2SK2018-01L T151
Untitled Abstract: No abstract text available Text: 2SK2019-01 F U JI P O W E R M O S-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES Outline Drawings • =eatures • H g h speed switching 03.6±O.2 • L j w on-resistance 50.2 • l\o secondary breakdown • L dw driving power • I-igh voltage Gale	OCR Scan	PDF	2SK2019-01 O-220AB 54i0-2
Untitled Abstract: No abstract text available Text: 2SK2018-01L, S FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-III SERIES • F e a tu re s O u tlin e D ra w in g s • High current • Low on-resistance • No secondary breakdown ml • Low driving power • High forward Transconductance ri *r->	OCR Scan	PDF	2SK2018-01L, 20Kfi)
Untitled Abstract: No abstract text available Text: FU JI 2SK2019-01 N-channel MOS-FET ö lL ,@ E lT L ß U E FAP-IIA Series 500V 3,5A 40W > Outline Drawing > Features - 3Q. High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications	OCR Scan	PDF	2SK2019-01
2SJ313 Abstract: MARKING SG toshiba 2SK2013 transistor marking 4D Text: TOSHIBA 2SJ313 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vd SS——180V High Forward Transfer Admittance : \|Yfs\| = 0.7S Typ. Complementary to 2SK2013	OCR Scan	PDF	2SJ313 2SK2013 2SJ313 MARKING SG toshiba transistor marking 4D
OF03 Abstract: 2SK1263 2SK2377 Text: Field Effect Transistors • Power F-MOS FETs Line-up Vgs =10V \ Vdss (V) \ to 60 80 100 150 170 200 250 450 500 550 600 800 900 \ (A) \ 1 A2SK2277 Mini Power 1.0 2SK2014 U Type 10 ★2SK2047 I Type a.o (Id=1.2A) ★2SK1834 220Fro ★2SK1980 N Type 7o ★ A2SK2128	OCR Scan	PDF	A2SK2277 2SK2014 2SK2047 2SK1834 220Fro 2SK1980 A2SK2128 A2SK2125 2SK1833 2SK2509 OF03 2SK1263 2SK2377

2SK201 Search Results

2SK201 Price and Stock

Rochester Electronics LLC 2SK2011

Rochester Electronics LLC 2SK2010-CTV-YA14

Aptina Imaging 2SK2011

Aptina Imaging 2SK2010-CTV-YA14

Aptina Imaging 2SK2010

2SK201 Datasheets (46)

2SK201 Datasheets Context Search

2SK245

2SK2012

Toshiba 2SJ

k2013

2sk2013 2SJ313

2SK2011

2SK2018-01L

2SJ313

2SK2018-01L

Untitled

2SK2010

Untitled

2SJ83

v-tek

2SJ313

Untitled

2SJ313

transistor C1000 Toshiba

2SK2018-01

Untitled

Untitled

Untitled

2SJ313

OF03