Untitled
Abstract: No abstract text available
Text: 2SK1891 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)15 I(D) Max. (A)35 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)140 @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)1.65 Minimum Operating Temp (øC)-55
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2SK1891
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2SK1891
Abstract: No abstract text available
Text: Ordering number:EN4206 N-Channel Silicon MOSFET 2SK1891 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SK1891] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.
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EN4206
2SK1891
2SK1891]
2SK1891-applied
2SK1891
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on line ups circuit diagrams
Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
Text: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm
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EP51E
CPH6605
MCH6613
ECH8609
CPH3424
CPH3427
K3614
FW343
FW356
FW360
on line ups circuit diagrams
2SK3850
242M
SSFP package
K3492
3ln03
MCH3435
CPH5612
three phase on line ups circuit diagrams
TN6R04
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TN6Q04
Abstract: 2sk4100 2SJ585 2SK4100ls 2SK4101LS INV250 2SK4096LS 2SJ406 2SK3745LS 2SJ584
Text: SANYO Power Transistors Bipolar Transistor Series & Schottky Barrier Diode Series CONTENTS 2ĝ5 ŝTO-220MF Package 6 ŝTO-220FI Package ŝLow-saturation Voltage Transistors 7 ŝTO-220FI5H Package 14 ŝHorizontal Deflection Output Use 8 ŝTO-220ML Package 15
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O-220MF
O-220FI
O-220FI5H
O-220ML
O-126
O-126LP
O-126ML
O-220FI
O-220FI5H-HB
O-220FI5H-HA
TN6Q04
2sk4100
2SJ585
2SK4100ls
2SK4101LS
INV250
2SK4096LS
2SJ406
2SK3745LS
2SJ584
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IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23
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AO4405
AO4407
AO4408
AO4409
AO4410
AO4411
AO4413
AO4415
AO4422
AO4700
IRF1830G
IRF1830
transistor IRF1830G
APM2054N equivalent
apm2054n
AP85L02h
AP70N03S
2SK3683
ap70l02h
2SK2696
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2sk3436
Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Text: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis
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TND023F
FX504
CPH5504
MCH5805
FX505
HPA72R
TND024F
FX506
MCH3301
TND024MP
2sk3436
2Sa1872
2sc6093
2SC4943
2sa1970
2SK3850
2SK1597
TT2084
2sc5267
2sk3744
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TN6Q04
Abstract: 2SJ585 TN6Q03 2sk4100 2SK4096LS 2SK4100ls 2SJ655 2SK3748 2SK4087LS datasheet 2SK4101LS
Text: Large Signal Packages Selector Guide CONTENTS ŝQuick Selection Guide P-channel New 2 •TO-3JML Package 14 ŝQuick Selection Guide N-channel New 3~5 ■TO-3PBL Package 14 6,7 ■TO-3PB Package 14 8.9 ■TO-3PML Package 14 15 ŝSwitching Power Supply ŝMotor Drive Use
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O-220
O-220ML
O-220FI
O-220FI5H
O-220FI
O-220FI5H-HB
O-220FI5H-HA
TN6Q04
2SJ585
TN6Q03
2sk4100
2SK4096LS
2SK4100ls
2SJ655
2SK3748
2SK4087LS datasheet
2SK4101LS
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2sk3436
Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
Text: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。
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40610HKPC
TC-00002289
CPH5815
MCH5815
MCH6629
MCH6649
CPH6610
CPH6614
SCH1411
SCH1436
2sk3436
2sc6093
2Sa1872
2SK1597
2SK3850
2SC5269
TT2084
2SC4943
2SC5793
2sa1970
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Untitled
Abstract: No abstract text available
Text: 2SK1891 2090_LD Low Drive Series V Dss = 3 0 V 2093 INI Channel Power MOSFET 4206 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •Surface mount type device making the following possible. • Reduction in the number of m anufacturing processes for 2SK1891-applied equipment.
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2SK1891
2SK1891-applied
10//S,
51193TH
AX-8377
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2SK1891
Abstract: I30U
Text: 2SK1891 2093 2090 LD L o w D riv e S e rie s V DSS= 3 0 V N Channel Power MOSFET 4206 F e a tu re s • Low ON resistance. •Very high-speed switching. ■Low-voltage drive. ■Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SK1891-applied equipment.
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2SK1891
2SK1891-applied
10/ys,
2SK1891
I30U
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tc 4206
Abstract: 2SK1891
Text: Ordering num ber:EN4206 _ 2SK1891 No.4206 . N-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. •Very high-speed switching. • Low-voltage drive. ■Surface m ount type device m aking the following possible.
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EN4206
2SK1891
2SK1891-applied
tc 4206
2SK1891
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2sk1885
Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Text: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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2SJ272
2SJ273
T0-220ML
2SJ274
2SK1904
2SK1905
60m/80m
2SK1906
2SJ275
2SJ276
2sk1885
2sj270
2SK1871
2SK1883
2sk2164
2SK2227
2SJ26
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2SK1925
Abstract: No abstract text available
Text: Continued from previous page II Device Applications Voss m I Vg ss I m 1 2SK1737 2SK1738 to P|j A W (°C| Tell V g S(oH) w m RDSfon) @ Id •Vos SDSfon) max (a) to r I vgs I W « vos *to Vos (S) 00 ¡0 : <*> FLP Very high-speed switch 100 ±15 1.8 1.5
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2SK1737
2SK1738
T0220
2SK1921*
2SK2142*
2SJ254
0220M
2SK1925
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J254
Abstract: J188 J256 J287
Text: LD S e r i e s L o w Dr i ve Sanyo en g in eers have developed a se rie s of devices th a t com bine th e featu res of both LSI an d pow er device process technologies to achieve a low d riv e voltage ofV (js = 4V for sa tu ra tio n , m aking them ideal for 5V d riv e logic
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2SJ191
J254
J188
J256
J287
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TO-32-070
Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)
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T0220ML
TO-32-070
2SA1678
FC102
2SC4449
2SA1416
2SJ193
2sk283
2sC4106 application notes
2SC3383
FC124
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2SK2164
Abstract: 2SK1885 2SJ270 2SJ260 2sj261
Text: SAßiYO Power MOS FETs 3 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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2SJ272
2SJ273
T0-220ML
2SJ274
2SK1904
2SK1905
60m/80m
2SK1906
2SJ275
2SJ276
2SK2164
2SK1885
2SJ270
2SJ260
2sj261
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2SK1731
Abstract: 2SK2637 2SK1871 2SK2626 2sk2636 2SK2438 2SK2153 2sk2406 2SK1474 2SK1920
Text: Continued from previous page Absolute maximum ratings Applications M VGSS Id V (A) (W) VDSS Electrical characteristics (Ta • 25 C ) RDSCmO @ ID PD Teh (1C) VGSS (off) (V) ID ■V6S ves (V) & |Yfs| 0 VDS ' ID slif Type Mo. Package type (A) 2SK1474 TP Ultrahigh-speed switching
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2SK1474
2SK1475
2SK1920
2SK2046
2SK2153
2SK2619V
2SK2626V
2SK2634V
2SK2164
2SK2321
2SK1731
2SK2637
2SK1871
2SK2626
2sk2636
2SK2438
2sk2406
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SBA10Q-O4Y
Abstract: 2SK2439 2SJ40 SK2555 FW106
Text: • Application Examples Synchronous rectifier Mounted Photos Synchronous Rectifier) ■ Electrical Connections ■ SOP8 Guaranteed Source-Wire Fusing Current I d (A.) ■ Device Lineup ♦ Schottky Barrier Diodes Absolute maximum ratings (Ta = 25 C) Package
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SB20W03P
SB30-03P
SB40W
SBA50-04Y
SBA10Q-O4Y
SBA130-04ZP
SBA160-04Y
SBA160-04ZP
250mm2
2SJ469
2SK2439
2SJ40
SK2555
FW106
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BI 370
Abstract: 2SK1878 LM9005 2501L 2SK1852 2SK1853 2SK1859 2SK1862 2SK1863 BA 5810
Text: - 124 - f £ tt % ffl & m S m * ê JV K V m * (V) * * M 3 & 1 * (A) * P d /P c h Ig s s (max) (W) (A) Vg s (V) (min) (max) Vos (A) (A) (V) fó Í# 1*È (Ta=25‘ C) (min) (V) (max) Vos (V) (V) (min) (S) Id (A) Vd s (V) % ? Id (A) 2SK1852 NEC SW.Motor-D
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2SK1852
2SK1853
2SK1859
2SK1862
2SK1863
1116B
2SK1911
130ns,
370nstyp
2SK1918
BI 370
2SK1878
LM9005
2501L
BA 5810
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2S1265
Abstract: bj 950 131- 6 2SK1885 2SJ type 2sj262 2SK1883 2SK3066 2SK2432 2SJ253 2SJ260
Text: Large-signal Power MOSFETs l The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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low-126
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
T0-220MF
lsDwATT220>
2S1265
bj 950 131- 6
2SK1885
2SJ type
2sj262
2SK1883
2SK3066
2SK2432
2SJ253
2SJ260
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