Untitled
Abstract: No abstract text available
Text: 2SK1607 Switching Diodes MA1U152A Silicon epitaxial planer type Unit : mm For switching circuits 2.8±0.2 • Features 0.65±0.15 Short reverse recovery period trr ● Small capacity between pins, Ct +0.1 2 0.7–0 +0.1 ● 3 0.4–0.05 in the high-speed mounting machine
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2SK1607
MA1U152A
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Untitled
Abstract: No abstract text available
Text: 2SK1607 Switching Diodes MA204WK, MA205WK Silicon epitaxial planer type Unit : mm 6.9±0.1 0.15 0.7 1.05 2.5±0.1 ±0.05 1.45 0.8 4.0 ● Small capacity between pins, Ct ● Supply 0.65 max. 14.5±0.5 reverse recovery period trr 0.85 ● Short 1.0 0.8 • Features
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2SK1607
MA204WK,
MA205WK
MA204WK
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Untitled
Abstract: No abstract text available
Text: 2SK1607 Switching Diodes MA204WK, MA205WK Silicon epitaxial planer type Unit : mm 6.9±0.1 0.15 0.7 1.05 2.5±0.1 ±0.05 1.45 0.8 4.0 ● Small capacity between pins, Ct in radial taping manner possible M Di ain sc te on na tin nc ue e/ d ● Supply 0.65 max.
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2SK1607
MA204WK,
MA205WK
MA204WK
MA205WK
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2SK1607
Abstract: SC-65 2sk16
Text: Power F-MOS FETs 2SK1607 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic M Di ain sc te on na tin nc ue e/ d unit: mm 4.0±0.1 V Pulse IDP ±13
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2SK1607
2SK1607
SC-65
2sk16
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MA1U152A
Abstract: 2SK1607 2sk16 MA1U152
Text: 2SK1607 Switching Diodes MA1U152A Silicon epitaxial planer type Unit : mm For switching circuits 2.8±0.2 • Features 1.5–0.05 Short reverse recovery period trr ● Small capacity between pins, Ct 0.95 1.9±0.1 +0.1 2 0.7–0 +0.1 ● 0.4–0.05 in the high-speed mounting machine
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2SK1607
MA1U152A
MA1U152A
2SK1607
2sk16
MA1U152
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Untitled
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK1607 Silicon N-Channel Power F-MOS Unit : mm • Features 10.5±0.5 2.0±0.1 15.0±0.2 20.0±0.3 19.0±0.3 switching switching mode regulator ø3.2±0.1 3.5 high-frequency power amplification 2.0±0.2 Solder Dip ● High-speed 16.2±0.5
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2SK1607
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Untitled
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK1607 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic unit: mm 15.0±0.5 450 V VGSS ±30 V Pulse ID ±13 A IDP ±26 A EAS* Avalanche energy capacity
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2SK1607
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2SK1607
Abstract: MA204WK MA205WK
Text: 2SK1607 Switching Diodes MA204WK, MA205WK Silicon epitaxial planer type Unit : mm 6.9±0.1 0.15 0.7 1.05 2.5±0.1 ±0.05 1.45 0.8 4.0 ● Short 0.8 • Features capacity between pins, Ct 14.5±0.5 0.85 ● Supply 0.65 max. in radial taping manner possible
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2SK1607
MA204WK,
MA205WK
2SK1607
MA204WK
MA205WK
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MA175WK
Abstract: No abstract text available
Text: 2SK1607 Switching Diodes MA175WK, MA176WK Silicon epitaxial planer type Unit : mm 4.0±0.2 3.0±0.2 For switching circuits Small capacity between pins, Ct • Absolute Maximum Ratings Ta= 25˚C Parameter Symbol MA175WK Reverse voltage (DC) MA176WK MA175WK
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2SK1607
MA175WK,
MA176WK
MA175WK
MA176WK
MA175WK
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2SK1607
Abstract: SC-65
Text: Power F-MOS FETs 2SK1607 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic unit: mm 15.0±0.5 450 V VGSS ±30 V DC ID ±13 A Pulse IDP ±26 A EAS*
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2SK1607
2SK1607
SC-65
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Untitled
Abstract: No abstract text available
Text: 2SK1607 Switching Diodes MA1U152A Silicon epitaxial planer type Unit : mm For switching circuits 2.8±0.2 • Features 0.65±0.15 Short reverse recovery period trr ● Small capacity between pins, Ct +0.1 0.95 2 0.7–0 +0.1 ● di p Pl lan nclu ea e se pla m d m des
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2SK1607
MA1U152A
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G500 pulse
Abstract: No abstract text available
Text: 2SK1607 Switching Diodes MA132A Silicon epitaxial planer type Unit : mm 0.28±0.05 Short reverse recovery period trr ● Small capacity between pins, Ct ● Extra-small SS-Mini type package, enabling high-density mounting 1.60±0.1 0.80±0.05 1 +0.05 ● 1.60–0.03
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2SK1607
MA132A
G500 pulse
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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Untitled
Abstract: No abstract text available
Text: Panasonic Power F-MOS FETs 2SK1607 Silicon N-Channel Power F-MOS I Features ► High avalanche energy capability ► V qss : 30V guaranteed ► Low R ds oii , high-speed switching characteristic I Applications ► High-speed switching (switching mode regulator)
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OCR Scan
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2SK1607
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2SK2324
Abstract: TO-220E 2SK1609 2SK1614 2SK2129 220E 2SK1606 2SK1611 2sk2128 2SK2323
Text: Field Effect Transistors • Power F-MOS FETs continued Type No. Package No. Application Absolute Maximum Ratinqs (Ta = 2 5 °C) Pd Vdss Vgss Id (T c = 2 5 *C) (V) (W) (A) (V) 5 40 TO-220E D59 Relay DC-DC D48 converter D59 Solenoid D63 Control TC)-220F(a)
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OCR Scan
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2SK758
O-220F
2SK963
2SK1478
A2SK2122
O-220E
2SK1036
2SK766
2SK2324
TO-220E
2SK1609
2SK1614
2SK2129
220E
2SK1606
2SK1611
2sk2128
2SK2323
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2SK1603
Abstract: 2SK1601 2SK1606 2SK1580 2SK1582 2SK1583 2SK1584 2SK1585 2SK1586 2SK1588
Text: - 112 - ft f M £ tí: ffl € & m £ A £ 1 % E ft K V * (V) fr fê fr (A) % 3 P d /P c h (max) (A) (W) fö 4# 14 (Ta=25t3) (min) (V) (max) (V) Vd s I gss Vg s (VÏ (min) (A) (max) V d s (A) (V) Id (A) (V) (min) (S) %? Vds (V) 1d (A) 2SK1580 NEC SW MOS
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2SK1580
2SK1S81
2SK1582
2SK1583
2SK1584
2SK1603
35nstyp
2SK1605
50nstyp
2SK1606
2SK1603
2SK1601
2SK1606
2SK1585
2SK1586
2SK1588
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an6512n
Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
Text: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.
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MN115P
MN116P
MN1201A
MN1201M
MN1201S
MN1202M
MN1204A
MN1204B
MN1204E
MN1204F
an6512n
mn1225
MN1280
mn6520
MN6130
MN6147C
MN12C261D
MN12C201D
MN3107
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OF03
Abstract: 2SK1263 2SK2377
Text: Field Effect Transistors • Power F-MOS FETs Line-up Vgs =10V \ Vdss (V) \ to 60 80 100 150 170 200 250 450 500 550 600 800 900 \ (A) \ 1 A2SK2277 Mini Power 1.0 2SK2014 U Type 10 ★2SK2047 I Type a.o (Id=1.2A) ★2SK1834 220Fro ★2SK1980 N Type 7o ★ A2SK2128
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PDF
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A2SK2277
2SK2014
2SK2047
2SK1834
220Fro
2SK1980
A2SK2128
A2SK2125
2SK1833
2SK2509
OF03
2SK1263
2SK2377
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2sk2324
Abstract: 2SK2124 2SK2127 2sk2323
Text: Package Package No. 1Type (D44) N Type (D42) MT4 (D41) TO-22C)F(a) TO-220E (D55) (D59) 2SK1605 2SK2123 2SK1606 TOP-3(a) (D60) TOP-3E (D65) 2SK2125 2SK1608 2SK2126 2SK1609 2SK2127 R o S 'ù n ; Id (A) 2SK2032 2SK2571 500 2SK1610 2SK2383 550 2SK2047 max. ( ü )
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O-22C
O-220E
2SK1605
2SK1606
2SK2123
2SK2124
2SK1607
2SK2032
2SK2571
2SK2509
2sk2324
2SK2127
2sk2323
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MN1280
Abstract: AN6512 MN15814 MN15245 2Sb1163a mn158413 AN7210 AN7226 MN15287 MN15283
Text: pes H Maintenance • mos LS Is Type No. Alternative ^ype No. Alternative Type No. - MN6040Z — - MN6049 — MN3726FE/AE MN4520B/S MN4521 B/S - — MN3726AE MN4522B/S - MN6063 MN6063A - MN4526B/S - MN6064 - - MN4528B/S — - MN4532B/S — MN6064R/S MN61074
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MN1380
MN13801
MN13802
MN1381
MN13811
MN13812
MN1382
MN13821
MN13822
MN1544
MN1280
AN6512
MN15814
MN15245
2Sb1163a
mn158413
AN7210
AN7226
MN15287
MN15283
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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2SK2324
Abstract: 220E 2SK2129 2SK76 2sk203 2SK1606 2sk2128 2SK996 2SK1036 2SK1331
Text: Field Effect Transistors • Power F-MOS FETs continued Type No. Package No. Application Absolute Maximum Ratinqs (Ta = 2 5 °C) Pd Vdss Vgss Id (T c = 2 5 *C) (V) (W) (A) (V) 5 40 Electrical Characteristics (Tc = 2 5 ’C) ti td (off) ton RoS(on) 1Y h I
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2SK758
O-220F
2SK963
2SK1478
A2SK2122
O-220E
2SK1036
2SK766
2SK2324
220E
2SK2129
2SK76
2sk203
2SK1606
2sk2128
2SK996
2SK1331
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2SK2277
Abstract: 2SK2580 220E4 2SK2015 2SK2014
Text: FET, IGBT, IPD • Power F-MOS FETs Line-up Vgs =10V ÎV dss \ (V) 60 80 100 150 170 250 450 500 550 800 900 (A) \ 1 2SK2277 Mini-Powerl .0 2SK2014 UTypei.O ★2SK2047 I Type b.o (Id =1.2A) 2SK2538 220Fz.o ★2SK1834 220Fro ★2SK1980 N Type 7.0 ★ A2SK2128
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OCR Scan
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PDF
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2SK2277
2SK2014
2SK2047
2SK2538
220Fz
2SK1834
220Fro
2SK1980
A2SK2128
220E-0
2SK2580
220E4
2SK2015
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