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    2SJ266 Search Results

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    2SJ266 Price and Stock

    Rochester Electronics LLC 2SJ266-DL-E

    PCH 4V DRIVE SERIES
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    DigiKey 2SJ266-DL-E Bulk 365
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    onsemi 2SJ266-DL-E

    Trans MOSFET P-CH 60V 8A 3-Pin(2+Tab) SMP-FD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SJ266-DL-E 6,000 404
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    Rochester Electronics 2SJ266-DL-E 6,000 1
    • 1 $0.7908
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    • 100 $0.7434
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    2SJ266 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ266 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
    2SJ266 Unknown High Speed Power Amp., 60V 8A 50W, MOS-FET P-Channel enhanced Scan PDF
    2SJ266 Unknown P-Channel Power MOSFET Scan PDF
    2SJ266 Sanyo Semiconductor Ultra High Speed Switching MOSFET Scan PDF
    2SJ266 Sanyo Semiconductor TO-3PB, ZP, SMP Type Transistors Scan PDF
    2SJ266 Sanyo Semiconductor Large Signal Power MOSFET Scan PDF
    2SJ266FD Unknown P-Channel Power MOSFET Scan PDF

    2SJ266 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SJ266

    Abstract: ITR00258 ITR00259 ITR00260 ITR00261 ITR00262 IT00265
    Text: 注文コード No.N 4 2 3 6 2SJ266 No. 4 2 3 6 三洋半導体ニューズ 52099 新 2SJ266 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。


    Original     		2SJ266 IT00264 IT00265 ITR00262 IT00266 IT00267 2SJ266 ITR00258 ITR00259 ITR00260 ITR00261 ITR00262 IT00265 PDF

    2SJ266

    Abstract: No abstract text available
    Text: Ordering number:EN4236 P-Channel Silicon MOSFET 2SJ266 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SJ266] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.


    Original     		EN4236 2SJ266 2SJ266] 2SJ266-applied 2SJ266 PDF

    2SJ266

    Abstract: No abstract text available
    Text: Ordering number:EN4236 P-Channel Silicon MOSFET 2SJ266 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SJ266] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.


    Original     		EN4236 2SJ266 2SJ266] 2SJ266-applied 2SJ266 PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF

    2sk3436

    Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
    Text: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis


    Original     		TND023F FX504 CPH5504 MCH5805 FX505 HPA72R TND024F FX506 MCH3301 TND024MP 2sk3436 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744 PDF

    2sk3436

    Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
    Text: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。


    Original     		40610HKPC TC-00002289 CPH5815 MCH5815 MCH6629 MCH6649 CPH6610 CPH6614 SCH1411 SCH1436 2sk3436 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970 PDF

    2sj26

    Abstract: No abstract text available
    Text: 2SJ266 2093 2090 L D { L o w D rive S e r ie s V DSs=z 6 0 V P Channel Power M OSFET f 4236 F e a tu re s • Low ON resistance. - Very high-speed switching. - Low-voltage drive. • Surface m ount type device m aking the following possible. • Reduction in the num ber of m anufacturing processes for 2SJ266-applied equipm ent.


    OCR Scan     		2SJ266 2SJ266-applied --20V 2sj26 PDF

    diode pjo

    Abstract: mosfet b44 2SJ266 AX-8376 B44 diode 2SJ26
    Text: 2SJ266 2093 2090 LD L o w D rive S eries V DSS= 6 0 V P Channel Power MOSFET 4236 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible. •Reduction in the num ber of m anufacturing processes for 2SJ266-applied equipm ent.


    OCR Scan     		2SJ266 2SJ266-applied diode pjo mosfet b44 2SJ266 AX-8376 B44 diode 2SJ26 PDF

    pj 57 diode

    Abstract: 2SJ266
    Text: Ordering number : EN 4236 2SJ266 No.4236 P-Channel MOS Silicon FET SANYO i Very High-Speed Switching Applications F eatures • Low ON resistance. - Very high-speed switching. - Low-voltage drive. • Surface mount type device making the following possible.


    OCR Scan     		EN4236 2SJ266 2SJ266-applied pj 57 diode 2SJ266 PDF

    2sk1885

    Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
    Text: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and


    OCR Scan     		2SJ272 2SJ273 T0-220ML 2SJ274 2SK1904 2SK1905 60m/80m 2SK1906 2SJ275 2SJ276 2sk1885 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26 PDF

    2SK1925

    Abstract: No abstract text available
    Text: Continued from previous page II Device Applications Voss m I Vg ss I m 1 2SK1737 2SK1738 to P|j A W (°C| Tell V g S(oH) w m RDSfon) @ Id •Vos SDSfon) max (a) to r I vgs I W « vos *to Vos (S) 00 ¡0 : <*> FLP Very high-speed switch 100 ±15 1.8 1.5


    OCR Scan     		2SK1737 2SK1738 T0220 2SK1921* 2SK2142* 2SJ254 0220M 2SK1925 PDF

    2SJ26

    Abstract: No abstract text available
    Text: VDSS = 60V, P-channel Absolute maximum ratings at Ta = 25°C Type No. Package VDSS W 2SJ285 Voss V CP 2SJ190 •o (A) Po' W 0.25 0.25* ^GS(off) min to max (V) 1.0 PCP ^DS (on) RoS(on) typ/maxat Vß$-4V (ii) typ/maxat VGS = 10V 3.0/4.0 2.2/3.0 0.35 45 1.2/1.6


    OCR Scan     		2SJ285 2SJ190 2SJ288 2SJ191 2SJ192 2SJ362 2SJ414 O-220 O-220ML 2SJ26 PDF

    TO-32-070

    Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
    Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)


    OCR Scan     		T0220ML TO-32-070 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124 PDF

    2SK2164

    Abstract: 2SK1885 2SJ270 2SJ260 2sj261
    Text: SAßiYO Power MOS FETs 3 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and


    OCR Scan     		2SJ272 2SJ273 T0-220ML 2SJ274 2SK1904 2SK1905 60m/80m 2SK1906 2SJ275 2SJ276 2SK2164 2SK1885 2SJ270 2SJ260 2sj261 PDF

    SBA10Q-O4Y

    Abstract: 2SK2439 2SJ40 SK2555 FW106
    Text: • Application Examples Synchronous rectifier Mounted Photos Synchronous Rectifier) ■ Electrical Connections ■ SOP8 Guaranteed Source-Wire Fusing Current I d (A.) ■ Device Lineup ♦ Schottky Barrier Diodes Absolute maximum ratings (Ta = 25 C) Package


    OCR Scan     		SB20W03P SB30-03P SB40W SBA50-04Y SBA10Q-O4Y SBA130-04ZP SBA160-04Y SBA160-04ZP 250mm2 2SJ469 2SK2439 2SJ40 SK2555 FW106 PDF

    2S1265

    Abstract: bj 950 131- 6 2SK1885 2SJ type 2sj262 2SK1883 2SK3066 2SK2432 2SJ253 2SJ260
    Text: Large-signal Power MOSFETs l The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and


    OCR Scan     		low-126 T0-126LP T0-220CI T0-220ML SC-67, OT-186) O-220FIÂ SC-67KS0T-189} T0-220MF lsDwATT220> 2S1265 bj 950 131- 6 2SK1885 2SJ type 2sj262 2SK1883 2SK3066 2SK2432 2SJ253 2SJ260 PDF